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CN-121985743-A - Method for forming semiconductor device

CN121985743ACN 121985743 ACN121985743 ACN 121985743ACN-121985743-A

Abstract

The present disclosure provides a method of forming a semiconductor device including the steps of placing a semiconductor substrate in a processing tank, injecting a processing liquid into the processing tank to a first level of the processing tank such that the semiconductor substrate is completely immersed in the processing liquid, performing an oxidation treatment on the semiconductor substrate with the semiconductor substrate resting in the processing liquid to form an oxide layer on the semiconductor substrate, maintaining a temperature of the processing liquid during the oxidation treatment at about 65 ℃ to about 85 ℃ and a time of the oxidation treatment at about 50 minutes to about 100 minutes.

Inventors

  • GUO JIAXIAN
  • JIANG YEYU
  • YAN MINGZHENG
  • LI JUNYI

Assignees

  • 力晶积成电子制造股份有限公司

Dates

Publication Date
20260505
Application Date
20241128
Priority Date
20241030

Claims (10)

  1. 1. A method of forming a semiconductor device, comprising: placing a semiconductor substrate in a processing tank; injecting a treatment liquid into the treatment tank to a first level of the treatment tank so that the semiconductor substrate is completely immersed in the treatment liquid, and The semiconductor substrate is subjected to oxidation treatment in a manner of standing in the treatment liquid to form an oxide layer on the semiconductor substrate, Wherein the temperature of the treatment fluid is maintained at about 65 ℃ to about 85 ℃ during the oxidation treatment and the time of the oxidation treatment is about 50 minutes to about 100 minutes.
  2. 2. The method of claim 1, wherein the oxidation treatment is included in a front end of line (FEOL) of the semiconductor substrate and/or in a back end of line (BEOL) of the semiconductor substrate.
  3. 3. The method of claim 2, wherein the front-end-of-line process comprises forming a trench for a Shallow Trench Isolation (STI) structure in a front side of the semiconductor substrate, the oxidation treatment being performed after forming the trench to repair a surface of the semiconductor substrate in which the trench is formed.
  4. 4. The method of claim 2, wherein the back-end-of-line process comprises forming a trench for a Deep Trench Isolation (DTI) structure on a backside of the semiconductor substrate, the oxidation treatment being performed after forming the trench to repair a surface of the semiconductor substrate on which the trench is formed.
  5. 5. The method of claim 1, wherein the treatment fluid is comprised of water and hydrogen peroxide (H 2 O 2 ).
  6. 6. The method of claim 1, wherein the oxide layer has a thickness greater than
  7. 7. The method of claim 1, wherein the treatment fluid is maintained at the temperature of about 65 ℃ to about 85 ℃ by an ultrasonic oscillator having a power of 50% to 100% of a maximum power of 1200W to 2400W.
  8. 8. The method of claim 1, wherein the treatment fluid is heated by microwaves or coils to maintain the temperature at about 65 ℃ to about 85 ℃.
  9. 9. The method of claim 1, wherein when the treatment fluid decreases from the first level to a second level lower than the first level during the oxidation treatment, the method further comprises injecting additional treatment fluid into the treatment tank at the first level of the treatment tank.
  10. 10. The method of claim 9, wherein the treatment fluid maintains the temperature at about 65 ℃ to about 85 ℃ by additional injection of the treatment fluid.

Description

Method for forming semiconductor device Technical Field The present invention relates generally to a method of forming a semiconductor device, and more particularly to a process for repairing a semiconductor substrate during a semiconductor process. Background In the process of forming semiconductor devices, structures such as isolation structures for defining active regions or structures such as through-substrate vias (through substrate via, TSVs) for electrical connection are typically formed in a semiconductor substrate by one or more semiconductor processes. However, these semiconductor processes typically include performing processes such as etching on the semiconductor substrate to form trenches for isolation structures or via holes for TSVs in the semiconductor substrate, which may cause the semiconductor substrate to be damaged to some extent at the surface subjected to the processes. As the size of electronic devices is continuously reduced and the performance requirements of users are continuously improved, the process of repairing the damage is also being paid attention to. Disclosure of Invention The present invention provides a method of forming a semiconductor device, which forms an oxide layer of a desired thickness on a damaged surface of a semiconductor substrate by performing an oxidation treatment by standing the semiconductor substrate in a treatment liquid, so that damage of the semiconductor substrate caused by a process such as etching can be effectively repaired. An embodiment of the present invention provides a method of forming a semiconductor device including placing a semiconductor substrate in a processing tank, injecting a processing liquid into the processing tank to a first level of the processing tank such that the semiconductor substrate is completely immersed in the processing liquid, and performing an oxidation treatment on the semiconductor substrate in such a manner that the semiconductor substrate is left standing in the processing liquid to form an oxide layer on the semiconductor substrate, wherein a temperature of the processing liquid is maintained at about 65 ℃ to about 85 ℃ and a time of the oxidation treatment is about 50 minutes to about 100 minutes during the oxidation treatment. In some embodiments, the oxidation process is included in a front-end-of-line (FEOL) process performed on the semiconductor substrate and/or in a back-end-of-line (BEOL) process performed on the semiconductor substrate. In some embodiments, the front-end-of-line process includes forming a trench for a Shallow Trench Isolation (STI) structure on a front side of the semiconductor substrate, and the oxidation process is performed after the trench is formed to repair a surface of the semiconductor substrate where the trench is formed. In some embodiments, the back-end-of-line process includes forming a trench for a Deep Trench Isolation (DTI) structure on a backside of the semiconductor substrate, and the oxidation process is performed after forming the trench to repair a surface of the semiconductor substrate having the trench formed therein. In some embodiments, the treatment fluid is comprised of water and hydrogen peroxide (H 2O2). In some embodiments, the oxide layer has a thickness greater than In some embodiments, the treatment fluid is maintained at a temperature of about 65 ℃ to about 85 ℃ by an ultrasonic oscillator having a power of 50% to 100% of its maximum power, and a maximum power of 1200W to 2400W. In some embodiments, the treatment fluid is maintained at a temperature of about 65 ℃ to about 85 ℃ by way of microwave (micro-wave) or coil heating. In some embodiments, when the treatment fluid decreases from the first level to a second level lower than the first level during the oxidation process, the method of forming a semiconductor device further includes injecting additional treatment fluid into the treatment tank at the first level of the treatment tank. In some embodiments, the treatment fluid is maintained at a temperature of about 65 ℃ to about 85 ℃ by additional injections of the treatment fluid. Based on the above, in the above method of forming a semiconductor device, an oxide layer of a desired thickness is formed on a damaged surface of a semiconductor substrate by performing an oxidation treatment by leaving the semiconductor substrate in a treatment liquid. In this way, damage to the semiconductor substrate caused by processes such as etching can be effectively repaired. Drawings Fig. 1 is a flow chart of a method of forming a semiconductor device according to an embodiment of the invention. Fig. 2A is a schematic cross-sectional view of a method of forming a semiconductor device according to an embodiment of the invention. Fig. 2B is a schematic cross-sectional view of a method of forming a semiconductor device according to yet another embodiment of the present invention. Fig. 2C is a schematic cross-sectional view of a method of forming a semiconductor devic