CN-121985749-A - Method and device for realizing imaging

CN121985749ACN 121985749 ACN121985749 ACN 121985749ACN-121985749-A

Abstract

The application provides a method and a device for realizing patterning, wherein a product to be processed comprises a patterned area and a non-patterned area, the patterned area and the non-patterned area both comprise patterned layers and mask protection layers formed on the surfaces of the patterned layers, the patterning step comprises the steps of destroying the mask protection layers of the non-patterned areas through a friction mechanism or a bombardment mechanism, forming a plurality of permeation channels on the mask protection layers of the non-patterned areas, corroding the patterned layers through the permeation channels by corrosive liquid to remove the patterned layers of the non-patterned areas, cleaning the product to be processed to remove the residual mask protection layers of the non-patterned areas, and reserving the patterned layers and the mask protection layers of the patterned areas to realize patterning. The method has the advantages of larger process window, high process stability, less damage to the areas except the mask protection layer in the non-pattern area in the process of damaging the mask protection layer in the non-pattern area, and lower cost.

Inventors

WANG SHENGHUI
ZHANG SONG
LU HONGYAN
ZHU FAN

Assignees

帝尔激光科技(无锡)有限公司

Dates

Publication Date: 20260505
Application Date: 20241230

Claims (16)

1. A method for realizing patterning, a product to be processed comprises a patterned area and a non-patterned area, wherein the patterned area and the non-patterned area both comprise a patterned layer and a mask protection layer formed on the surface of the patterned layer, and the method is characterized by comprising the following steps: S1, destroying a mask protection layer of the non-pattern area, and forming a plurality of permeation channels on the mask protection layer of the non-pattern area; s2, etching the patterned layer by etching liquid through the permeation channel to remove the patterned layer in the non-patterned area; and S3, cleaning the product to be processed, removing the residual mask protection layer in the non-graphic area, and reserving the patterning layer and the mask protection layer in the graphic area to realize patterning.
2. A method of patterning as claimed in claim 1, wherein the etchant is an alkaline or acidic solution and the permeate channel extends through the mask layer in the non-patterned region.
3. A method of patterning according to any one of claims 1 or 2, wherein said non-patterned region of said mask layer is rubbed physically so that a plurality of said permeation pathways are formed in said non-patterned region of said mask layer.
4. A method of patterning as claimed in claim 3, wherein physically rubbing the mask protection layer in the non-patterned region comprises: s21, carrying out image acquisition and analysis processing on the product to be processed to determine the graphic area and the non-graphic area; S22, controlling a friction mechanism to rub the mask protection layer of the non-pattern area.
5. The method of patterning as set forth in claim 4, wherein the step S22 includes: s221, the friction mechanism rubs the mask protection layer of the non-pattern area along the first direction or the direction opposite to the first direction; S222, the friction mechanism rubs the mask protection layer of the non-pattern area along a second direction or a direction opposite to the second direction, and the first direction and the second direction are intersected with each other.
6. The method of patterning of claim 5, wherein steps S221 and S222 are performed a plurality of times until a plurality of permeation pathways are formed on the mask protection layer of the non-patterned area.
7. A method of patterning according to any one of claims 1 or 2, wherein the mask layer of the non-patterned region is subjected to physical bombardment so that a plurality of said permeation pathways are formed in the mask layer of the non-patterned region.
8. The method of claim 7, wherein physically bombarding the mask protection layer in the non-patterned region comprises: setting a mask plate on the mask protection layer, wherein a hollowed-out area on the mask plate is opposite to the non-graphic area; the accelerated ions pass through the hollowed-out area and bombard the mask protection layer of the non-pattern area, so that a plurality of penetration channels are formed on the mask protection layer of the non-pattern area.
9. An apparatus for realizing patterning according to any one of claims 1 to 6, comprising an adsorption platform, a control system, a visual detection mechanism and a friction mechanism, wherein the product to be processed is adsorbed on the adsorption platform, the visual detection mechanism is used for positioning the product to be processed and patterning the product to be processed, determining a pattern area and a non-pattern area of the product to be processed and transmitting the result to the control system, and the control system is used for controlling the friction mechanism to rub a mask protection layer of the non-pattern area.
10. The apparatus for patterning of claim 9 further comprising a press block pressing at least two opposite sides of the product to be processed against the adsorption platform.
11. The apparatus of claim 9, wherein the friction mechanism comprises a drive assembly and a friction block, the friction block having a friction surface with a plurality of protrusions, the drive assembly driving the friction surface of the friction block to rub the mask protection layer of the non-patterned area in a predetermined path.
12. The apparatus of claim 11, wherein the protrusions extend outwardly from the surface of the friction surface to a height greater than the thickness of the masking layer and less than the total thickness of the masking layer and the patterning layer.
13. The apparatus according to claim 9, wherein the rubbing mechanism comprises a driving member, a substrate, and at least one rubbing block disposed on the substrate, the at least one rubbing block being disposed corresponding to the non-pattern region, the driving member driving the substrate to move such that the rubbing block rubs the mask protection layer of the corresponding non-pattern region according to a preset path.
14. The apparatus for patterning of claim 13 wherein said friction block has a cross-sectional dimension that is smaller than a cross-sectional dimension of said non-patterned region.
15. A device for realizing patterning according to any one of claims 1, 2, 7 and 8, comprising an adsorption platform, a mask plate and a bombardment mechanism, wherein a product to be processed is adsorbed on the adsorption platform, the mask plate is provided with a hollowed-out area, the hollowed-out area is right opposite to the non-pattern area after the mask plate is placed on the product to be processed, and the bombardment mechanism bombards the breadth of the whole mask plate.
16. The apparatus of claim 15, wherein the bombardment means is a magnetron sputtering bombardment means or an ion beam bombardment means.

Description

Method and device for realizing imaging Technical Field The application belongs to the technical field of semiconductors, and particularly relates to a method and a device for realizing patterning. Background Currently common patterning technologies are photolithography, laser, and inkjet printing. The photoetching route mainly comprises the steps of coating, exposing, developing and the like of photoresist, forming a photoresist layer with a specific pattern on the surface of a product, and then etching by using the photoresist layer as a mask, so as to obtain a required patterned structure. The route has the advantages of high cost, complex process, high equipment maintenance cost and relatively low production efficiency. The laser route is to directly etch or deposit on the surface of the product by using laser beam to form the needed patterned structure, or to etch the pattern on the mask by using laser and deposit, and finally to wash the mask to form the needed patterned structure, which has the advantages of non-contact, high precision and strong flexibility. However, this route has high equipment cost, limited productivity, heat-affected problems, and difficulty in ensuring accuracy and consistency. The ink jet printing route is to directly jet ink containing specific materials on the surface of a product through an ink jet printing technology to form a required graphical structure, and has the advantages of low cost, high flexibility and the like. However, the pattern accuracy of such a route is to be improved, the ink stability is poor, the equipment requires a certain investment and requires regular maintenance. Disclosure of Invention In view of this, the present application provides a method and apparatus for implementing patterning, in which a permeation channel is formed by destroying a mask protection layer in a non-patterned area, so that a etching solution can etch the patterned layer in the non-patterned area through the permeation channel, and then the mask protection layer remaining in the non-patterned area is removed by cleaning, so as to preserve the patterned layer and the mask protection layer in the patterned area, thereby implementing patterning. The application provides a method for realizing patterning, wherein a product to be processed comprises a patterned area and a non-patterned area, the patterned area and the non-patterned area both comprise a patterned layer and a mask protection layer formed on the surface of the patterned layer, and the method comprises the following steps: S1, destroying a mask protection layer of the non-pattern area, and forming a plurality of permeation channels on the mask protection layer of the non-pattern area; s2, etching the patterned layer by etching liquid through the permeation channel to remove the patterned layer in the non-patterned area; and S3, cleaning the product to be processed, removing the residual mask protection layer in the non-graphic area, and reserving the patterning layer and the mask protection layer in the graphic area to realize patterning. Preferably, the etching solution is an alkaline solution or an acidic solution, and the penetration channel penetrates through the mask protection layer of the non-pattern area. Preferably, physical friction is performed on the mask protection layer of the non-pattern area, so that a plurality of penetration channels are formed on the mask protection layer of the non-pattern area. Preferably, the process of performing physical rubbing on the mask protection layer of the non-graphic region includes: s21, carrying out image acquisition and analysis processing on the product to be processed to determine the graphic area and the non-graphic area; S22, controlling a friction mechanism to rub the mask protection layer of the non-pattern area. Preferably, the step S22 includes: s221, the friction mechanism rubs the mask protection layer of the non-pattern area along the first direction or the direction opposite to the first direction; S222, the friction mechanism rubs the mask protection layer of the non-pattern area along a second direction or a direction opposite to the second direction, and the first direction and the second direction are intersected with each other. Preferably, the steps S221 and S222 are performed a plurality of times until a plurality of penetration channels are formed on the mask protection layer of the non-pattern region. In another preferred mode, physical bombardment is carried out on the mask protection layer of the non-graph area, so that a plurality of penetration channels are formed on the mask protection layer of the non-graph area. Preferably, the process of performing physical bombardment on the mask protection layer of the non-pattern area includes: setting a mask plate on the mask protection layer, wherein a hollowed-out area on the mask plate is opposite to the non-graphic area; the accelerated ions pass through the hollowed-out area and bombard the mask