CN-121985750-A - Film patterning method for improving bubble defect

Abstract

The invention discloses a film patterning method for improving bubble defects, which comprises the steps of growing a first film on a bottom structure, wherein water vapor is arranged in the first film. And carrying out surface treatment on the first film layer and forming a water vapor barrier layer. And in the process of forming the SOC layer, the water vapor barrier layer prevents water vapor from being transferred into the SOC layer so as to reduce bubble defects after the patterning of the SOC layer. The photoresist is patterned by exposure development. And sequentially etching the silicon-based anti-reflection layer and the SOC layer at any time to transfer the graph into the silicon-based anti-reflection layer and the SOC layer. Etching the first film layer to form a pattern structure of the first film layer. The invention can reduce bubble defects in the patterned film.

Inventors

• YIN JIAWEI
• LIU WENYAN

Assignees

• 上海华力集成电路制造有限公司

Dates

Publication Date

20260505

Application Date

20260120

Claims (11)

1. 1. A film patterning method for improving bubble defects is characterized by comprising the following steps: growing a first film layer on the underlying structure, wherein the first film layer is provided with water vapor; Carrying out surface treatment on the first film layer and forming a water vapor barrier layer; In the process of forming the SOC layer, the water vapor barrier layer prevents the water vapor from being transferred to the interface corresponding to the bottom surface of the SOC layer so as to reduce bubble defects after the patterning of the SOC layer; Performing exposure and development to pattern the photoresist; Etching the silicon-based anti-reflection layer and the SOC layer in sequence to transfer the graph into the silicon-based anti-reflection layer and the SOC layer; And etching the first film layer to form a graph structure of the first film layer.
2. 2. The method of claim 1, wherein the first film is a semiconductor material layer or a dielectric material layer.
3. 3. The method of claim 2, wherein the semiconductor material layer comprises a silicon layer and the dielectric material layer comprises an oxide layer, a nitride layer, or a low dielectric constant layer.
4. 4. The method for patterning a film layer for improving a bubble defect according to claim 1, wherein the surface treatment is ozone treatment, and the water vapor barrier layer is an oxide layer.
5. 5. The method of patterning a film for improving a bubble defect according to claim 4, wherein the concentration of ozone in the ozone treatment is 5ppm to 15ppm, the flow rate is 1000ml to 2000ml, and the time is 25s to 40s.
6. 6. The method of claim 1, wherein the underlying structure comprises a semiconductor substrate.
7. 7. The method for patterning a film layer for improving a bubble defect of claim 1, wherein the etching process of the silicon-based anti-reflection layer comprises dry etching; The etching of the SOC layer includes dry etching.
8. 8. The method of patterning a film for improving a bubble defect of claim 1, wherein the etching process of the first film comprises dry etching or wet etching.
9. 9. The method of patterning a film for improving bubble defects of a semiconductor wafer of claim 1, wherein the patterned structure of the first film comprises a trench.
10. 10. The method of claim 1, further comprising baking the SOC layer after the SOC layer is coated, wherein the moisture barrier layer prevents the moisture from being transferred to an interface corresponding to a bottom surface of the SOC layer during baking of the SOC layer.
11. 11. The method of patterning a film for improving a bubble defect of claim 6, wherein said semiconductor substrate comprises a silicon substrate.

Description

Film patterning method for improving bubble defect Technical Field The present invention relates to a method for fabricating a semiconductor integrated circuit, and more particularly, to a method for patterning a film layer to improve bubble defects. Background As shown in fig. 1, a flow chart of a conventional film patterning method is shown, as shown in fig. 2A to 2C, a schematic device structure in each step of the conventional film patterning method is shown, fig. 3 is a photograph corresponding to fig. 2C, and the conventional film patterning method includes the following steps: in step S101, as shown in fig. 2A, a film (film) 101 is formed by Deposition (DEP), and the film 101 has water vapor 102 therein. Step S102, as shown in fig. 2B, performs a Photolithography (PH) process, including the following sub-steps: An SOC layer 103, a silicon-based anti-reflective layer (Si ARC) 104, and a Photoresist (PR) 105 are sequentially formed. The silicon-based anti-reflective layer 104 is a BARC layer. Typically, the SOC layer 103 is formed by a coating (coating) process, and after the coating of the SOC layer 103 is completed, baking (baking) the SOC layer 103 is further included, where the baking may move the moisture 102 and may move to an interface between the SOC layer 103 and the film layer 101. The photoresist 105 is patterned by exposure development. Etching the silicon-based anti-reflection layer 104 and the SOC layer 103 in sequence transfers the pattern into the silicon-based anti-reflection layer 104 and the SOC layer 103. Since the water vapor 102 is present at the interface between the SOC layer 103 and the film layer 101, this may adversely affect the pattern of the SOC layer 103 and easily form bubble defects 102a. Step S103, as shown in fig. 2C, etching (ET) is performed to form the pattern structure of the film layer 101. As shown in fig. 2C, the presence of the moisture 102 eventually forms a bubble defect 102a on the surface of the film 101 after the etching of the film 101 is completed. The etching process of the film layer 101 adopts wet etching or dry etching. The patterned structure of the film 101 includes trenches 107. It can be seen that the bubble defect 102a is formed in a part of the trench 107. Please refer to fig. 3 for an actual photograph of the bubble defect 102a. Step S104, WET cleaning (WET), which is used to remove etching residues and clean the surface of the film layer 101. Disclosure of Invention The invention aims to provide a film patterning method for improving bubble defects, which can reduce the bubble defects in a patterned film. In order to solve the technical problems, the film patterning method for improving the bubble defect provided by the invention comprises the following steps: a first film layer is grown over the underlying structure, the first film layer having water vapor therein. And carrying out surface treatment on the first film layer and forming a water vapor barrier layer. And in the process of forming the SOC layer, the water vapor barrier layer prevents the water vapor from being transferred to the interface corresponding to the bottom surface of the SOC layer so as to reduce bubble defects after the patterning of the SOC layer. And carrying out exposure development to pattern the photoresist. And etching the silicon-based anti-reflection layer and the SOC layer in sequence to transfer the graph into the silicon-based anti-reflection layer and the SOC layer. And etching the first film layer to form a graph structure of the first film layer. Further improvement is that the first film layer is a semiconductor material layer or a dielectric material layer. A further improvement is that the semiconductor material layer comprises a silicon layer and the dielectric material layer comprises an oxide layer, a nitride layer or a low dielectric constant layer. In a further improvement, the surface treatment adopts ozone treatment, and the water vapor barrier layer is an oxide layer. In the ozone treatment, the concentration of the ozone is 5ppm to 15ppm, the flow is 1000ml to 2000ml, and the time is 25s to 40s. A further refinement provides that the substructure comprises a semiconductor substrate. Further improvement is that the etching process of the silicon-based anti-reflection layer comprises dry etching. The etching of the SOC layer includes dry etching. Further improvement is that the etching process of the first film layer comprises dry etching or wet etching. A further improvement is that the patterned structure of the first film layer includes a trench. The SOC layer is formed by adopting a coating process, and after the coating of the SOC layer is finished, the SOC layer is baked, and the water vapor blocking layer can prevent the water vapor from being transferred to the interface corresponding to the bottom surface of the SOC layer in the baking process of the SOC layer. A further improvement is that the semiconductor substrate comprises a silic