CN-121985759-A - Substrate processing apparatus and substrate drying method

Abstract

The invention provides a substrate processing apparatus and a substrate drying method. A substrate processing apparatus capable of performing a drying process for drying a substrate having a liquid film formed on a pattern formation surface by using a processing fluid in a supercritical state, the substrate processing apparatus including a processing container, a holding portion, and a supply portion. The processing container accommodates a substrate. The holding portion holds a substrate in a processing container. The supply unit supplies a processing fluid into the processing container. The holding portion includes a base portion, a plurality of support members, and a lifting mechanism. The base portion is disposed below the substrate. The plurality of support members are provided on the base portion and are capable of supporting the substrate from below. The lifting mechanism lifts and lowers the plurality of support members. The present invention can suppress collapse of a pattern formed on an upper surface of a substrate in a technique of drying the substrate using a processing fluid in a supercritical state.

Inventors

• NAKATA KATSUYA
• FUKUI SHOGO

Assignees

• 东京毅力科创株式会社

Dates

Publication Date

20260505

Application Date

20200729

Priority Date

20190805

Claims (9)

1. 1. A substrate processing apparatus, characterized in that: The substrate processing apparatus is capable of performing a drying process for drying a substrate having a liquid film formed on a pattern formation surface by using a processing fluid in a supercritical state, and comprises: A process container for accommodating the substrate, and A film thickness sensor for measuring a film thickness of the liquid film of the substrate stored in the processing container, The processing container includes a transparent portion through which the substrate accommodated in the processing container can be seen, The film thickness sensor measures the film thickness via the transparent portion.
2. 2. The substrate processing apparatus according to claim 1, wherein: the transparent part is arranged at the top of the processing container, The film thickness sensor is disposed above the processing container.
3. 3. The substrate processing apparatus according to claim 1, wherein: The film thickness sensor measures the film thickness in the drying process.
4. 4. A substrate processing apparatus according to claim 3, further comprising: A holding portion for holding the substrate in the processing container, the holding portion including a plurality of support members for supporting the substrate from below and a lifting mechanism for lifting the plurality of support members; a lifting control part for controlling the lifting mechanism, and An acquisition unit for acquiring information of the film thickness from the film thickness sensor, The elevation control unit raises or lowers the plurality of support members according to the film thickness obtained by the obtaining unit.
5. 5. The substrate processing apparatus according to claim 4, wherein: the elevation control unit raises or lowers the plurality of support members according to the film thickness varied during the drying process.
6. 6. The substrate processing apparatus according to any one of claims 1 to 5, wherein: Comprising a plurality of the film thickness sensors, At least one of the film thickness sensors measures the film thickness of the outer peripheral portion of the substrate.
7. 7. The substrate processing apparatus according to claim 6, wherein: At least one of the film thickness sensors measures the film thickness of the central portion of the substrate.
8. 8. The substrate processing apparatus according to claim 6, wherein: the processing container includes a plurality of the transparent portions, Each of the plurality of film thickness sensors measures the film thickness via a corresponding one of the plurality of transparent portions.
9. 9. A method of drying a substrate, characterized by: The substrate drying method for drying a substrate having a liquid film formed on a pattern formation surface using a processing fluid in a supercritical state, comprises: A step of storing the substrate in a processing container having a transparent portion through which the substrate stored in the processing container can be seen, and And measuring a film thickness of the liquid film of the substrate stored in the processing container through the transparent portion by using a film thickness sensor.

Description

Substrate processing apparatus and substrate drying method Technical Field The present invention relates to a substrate processing apparatus and a substrate drying method. Background Conventionally, there is known a technique in which, in a drying step after an upper surface of a substrate such as a semiconductor wafer is dried by a liquid, the substrate in a state in which the upper surface is wetted with the liquid is brought into contact with a processing fluid in a supercritical state, so as to dry the substrate. Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2013-251550 Disclosure of Invention Technical problem to be solved by the invention The present invention aims to provide a technique capable of suppressing pattern collapse (pattern collapse) formed on the upper surface of a substrate in a technique for drying the substrate using a processing fluid in a supercritical state. Technical scheme for solving technical problems The substrate processing apparatus according to an embodiment of the present invention is capable of performing a drying process for drying a substrate having a liquid film formed on a pattern formation surface by using a processing fluid in a supercritical state, and includes a processing container, a holding portion, and a supply portion. The processing container accommodates a substrate. The holding portion holds a substrate in a processing container. The supply unit supplies a processing fluid into the processing container. The holding portion includes a base portion, a plurality of support members, and a lifting mechanism. The base portion is disposed below the substrate. The plurality of support members are provided on the base portion and are capable of supporting the substrate from below. The lifting mechanism lifts and lowers the plurality of support members. Effects of the invention According to the present invention, in a technique of drying a substrate using a processing fluid in a supercritical state, pattern collapse formed on the upper surface of the substrate can be suppressed. Drawings Fig. 1 is a diagram showing a configuration of a substrate processing system according to an embodiment. Fig. 2 is a diagram showing a configuration of the liquid treatment unit according to the embodiment. Fig. 3 is an external perspective view of the drying process unit of the embodiment. Fig. 4 is a plan view of the holding portion according to the embodiment. Fig. 5 is a side cross-sectional view of the holding portion of the embodiment. Fig. 6 is a diagram showing the arrangement of the displacement sensor and the film thickness sensor according to the embodiment. Fig. 7 is a block diagram showing the configuration of the control device according to the embodiment. Fig. 8 is a diagram showing an example of the flow of the supercritical fluid in the processing space. Fig. 9 is a diagram showing an example of the lifting control process of the usage plan information or the liquid amount information. Fig. 10 is a diagram showing an example of a case where the support member is lifted up according to the liquid amount of the liquid film changed during the drying process. Fig. 11 is a view showing an example of a case where the support member is lowered according to the liquid amount of the liquid film changed during the drying process. Fig. 12 is a view showing an example of the height position of a wafer in a drying process. Fig. 13 is a diagram showing an example of changing the height position of the wafer according to the wafer temperature information. Fig. 14 is a view showing an example of a case where a wafer supported by a plurality of support members is tilted. Fig. 15 is a diagram showing an example of a case where the inclined wafer is eliminated by the lift control process. Fig. 16 is a diagram showing the arrangement of a film thickness sensor according to a modification. Description of the reference numerals W wafer 1 Substrate processing system 2 In-out station 3 Treatment station 5 Processing blocks 17 Liquid treatment unit 18 Drying treatment unit 19 Supply unit 31 Treatment vessel 32 Holding part 32A base portion 32B support member 32C lifting mechanism 32D through hole 33 Cover body 39 Lifting member 40 Weight sensor 61 Control part 61A information acquisition section 61B lifting control part 62 Storage part 62A scheme information 62B liquid film change information 62C wafer temperature information 62D liquid amount information 62E inclination information 62F film thickness distribution information. Detailed Description Hereinafter, modes (hereinafter referred to as "embodiments") for carrying out the substrate processing apparatus and the substrate drying method of the present invention will be described in detail with reference to the drawings. Further, the substrate processing apparatus and the substrate drying method of the present invention are not limited by this embodiment. The embodiments can be appropri