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CN-121985775-A - Electrostatic chuck and semiconductor processing apparatus

CN121985775ACN 121985775 ACN121985775 ACN 121985775ACN-121985775-A

Abstract

The invention provides an electrostatic chuck and semiconductor process equipment, and relates to the technical field of semiconductors. The electrostatic chuck comprises a lifting driving assembly and a base body, wherein a temperature adjusting assembly is arranged in the base body, a boss and a sealing ring are arranged at the top of the base body, the sealing ring is arranged around the boss, a containing groove is formed by surrounding the base body and the boss together, a baffle piece is embedded in the containing groove, the containing groove is located in a space above the baffle piece and serves as a heat exchange space, a back-blowing air channel is arranged on the base body, one end of the back-blowing air channel is communicated with the containing groove and is configured to send back-blowing air into the heat exchange space, the lifting driving assembly is connected with the baffle piece and is configured to drive the baffle piece to move up and down so as to adjust heat exchange efficiency of the back-blowing air in the heat exchange space to a process piece. The electrostatic chuck can realize high-precision adjustment of the temperature of the process piece by back-blowing gas through the lifting movement of the baffle piece without improving the temperature control and adjustment requirement of the temperature adjusting component, thereby improving the process effect and the yield of the process piece with lower cost.

Inventors

  • Request for anonymity
  • Request for anonymity
  • Request for anonymity

Assignees

  • 北京华卓精科科技股份有限公司

Dates

Publication Date
20260505
Application Date
20241031

Claims (10)

  1. 1. The electrostatic chuck is characterized by comprising a lifting driving assembly (600) and a base body (100) with a temperature adjusting assembly (700) arranged inside, wherein a boss (200) and a sealing ring (300) are arranged at the top of the base body (100), the sealing ring (300) is arranged around the boss (200) and forms a containing groove (400) together with the base body (100) and the boss (200), a baffle (500) is embedded in the containing groove (400), and a space above the baffle (500) is used as a heat exchange space (40A) by the containing groove (400); the base body (100) is provided with a back-blowing air passage, one end of the back-blowing air passage is communicated with the accommodating groove (400) and is configured to send back-blowing air into the heat exchange space (40A), the lifting driving assembly (600) is connected with the baffle member (500) and is configured to drive the baffle member (500) to move in a lifting mode so as to adjust heat exchange efficiency of the back-blowing air in the heat exchange space (40A) on the process member (10).
  2. 2. The electrostatic chuck of claim 1, wherein the boss (200) divides an in-ring space of the seal ring (300) into a plurality of grooves (410), the barrier (500) comprises a plurality of barriers (510), and the plurality of barriers (510) are embedded in the plurality of grooves (410) in a one-to-one correspondence; the lifting driving assembly (600) comprises a plurality of lifting driving components (610), wherein the lifting driving components (610) are connected to the plurality of baffle bodies (510) in a one-to-one correspondence manner and are configured to drive the corresponding baffle bodies (510) to move up and down in the corresponding groove bodies (410).
  3. 3. The electrostatic chuck of claim 2, further comprising a controller, wherein each of the grooves (410) is provided with a temperature detecting element (800), and wherein the temperature detecting element (800) and the elevation driving member (610) are connected to the controller.
  4. 4. The electrostatic chuck of claim 2, wherein said boss (200) comprises a plurality of annular bodies (210) spaced apart from each other within said seal ring (300); or, the boss (200) comprises a plurality of strip-shaped table bodies (220), the first ends of the strip-shaped table bodies (220) are connected to the axle center of the sealing ring (300), and the strip-shaped table bodies (220) are radially arranged and the second ends of the strip-shaped table bodies are connected to the sealing ring (300).
  5. 5. The electrostatic chuck of any of claims 1-4, wherein the barrier (500) is a thermally conductive material, and the space of the receiving groove (400) below the barrier (500) is filled with an elastic thermally conductive body (900).
  6. 6. The electrostatic chuck of any of claims 1-4, wherein the barrier member (500) is of a high resistance ceramic material.
  7. 7. The electrostatic chuck of any of claims 2-4, wherein said temperature adjustment assembly (700) comprises a plurality of heating electrodes, a plurality of said heating electrodes being positioned one-to-one beneath a plurality of said slots (410).
  8. 8. The electrostatic chuck of any of claims 1-4, wherein said temperature adjustment assembly (700) comprises a heating component (710) and/or a cooling component (720).
  9. 9. The electrostatic chuck of any one of claims 1-4, wherein an air outlet of said back-blowing air path is located at a bottom of said receiving groove (400).
  10. 10. A semiconductor processing apparatus comprising a process chamber and the electrostatic chuck of any one of claims 1-9, the electrostatic chuck being located within the process chamber.

Description

Electrostatic chuck and semiconductor processing apparatus Technical Field The present invention relates to the field of semiconductor technology, and in particular, to an electrostatic chuck and a semiconductor processing apparatus. Background In the manufacturing process of the semiconductor device, the electrostatic chuck not only plays a role of bearing the wafer, but also needs to regulate and control the temperature of the wafer so as to enable the wafer to reach the optimal temperature value range required by different processes, thereby obtaining better process effect and higher yield. In the related art, the electrostatic chuck generally adjusts the temperature range of the wafer by adjusting the heating power of the heating electrode, however, the temperature control adjustment requirement of the heating electrode is higher, and the temperature uniformity of the wafer is still not guaranteed, so that the process cost is higher, and the process effect and the yield are still lower. Disclosure of Invention The invention aims to provide an electrostatic chuck and semiconductor process equipment, which are used for solving the technical problems of higher process cost, lower process effect and lower yield of process parts in the related technology. In order to solve the problems, the invention provides an electrostatic chuck, which comprises a lifting driving assembly and a base body with a temperature adjusting assembly arranged inside, wherein a boss and a sealing ring are arranged at the top of the base body, the sealing ring is arranged around the boss and forms a containing groove together with the base body and the boss, a baffle piece is embedded in the containing groove, and a space, above the baffle piece, of the containing groove is used as a heat exchange space; the lifting driving assembly is connected with the baffle piece and is configured to drive the baffle piece to move up and down so as to adjust the heat exchange efficiency of back-blowing gas in the heat exchange space on the process piece. Optionally, the boss divides the space in the ring of the sealing ring into a plurality of groove bodies, the baffle piece comprises a plurality of baffle bodies, and the baffle bodies are embedded in the groove bodies in a one-to-one correspondence manner; The lifting driving assembly comprises a plurality of lifting driving components, the lifting driving components are connected with the baffle bodies in a one-to-one correspondence manner, and the lifting driving components are configured to drive the corresponding baffle bodies to move in the corresponding groove bodies in a lifting manner. Optionally, the electrostatic chuck further includes a controller, each of the grooves is provided with a temperature detecting element, and the temperature detecting element and the lifting driving component are both connected to the controller. Optionally, the boss comprises a plurality of annular table bodies sleeved in the sealing ring at intervals; or, the boss includes a plurality of bar-shaped table bodies, and a plurality of bar-shaped table bodies's first end all connect in the axle center department of sealing ring, a plurality of bar-shaped table bodies are radial and arrange and its second end all connect in the sealing ring. Optionally, the baffle is made of a heat conducting material, and the space, below the baffle, of the accommodating groove is filled with an elastic heat conductor. Alternatively, the barrier member is a high resistance ceramic material. Optionally, the temperature adjusting component comprises a plurality of heating electrodes, and the heating electrodes are located below the grooves in a one-to-one correspondence mode. Optionally, the temperature regulating assembly comprises a heating component and/or a cooling component. Optionally, the air outlet of the back-blowing air channel is positioned at the bottom of the accommodating groove. The invention also provides semiconductor process equipment, which comprises a process chamber and the electrostatic chuck, wherein the electrostatic chuck is positioned in the process chamber. According to the electrostatic chuck provided by the invention, the baffle piece is arranged in the accommodating groove, and can be driven by the lifting driving assembly to move up and down so as to adjust the height of the accommodating groove in the heat exchange space above the baffle piece, and through adjusting the heat exchange efficiency of back-blowing gas in the heat exchange space, the more accurate and effective adjustment of the temperature uniformity of the process piece by the back-blowing gas and the auxiliary and high-precision adjustment of the temperature value of the process piece are realized, so that the process effect and the yield of the process piece are improved, the temperature control adjustment requirement on the temperature adjusting assembly is reduced, and the temperature control cost of the electrostatic chuck is