CN-121985786-A - Electronic device and method for manufacturing the same

Abstract

The invention provides an electronic device and a manufacturing method thereof. The manufacturing method of the electronic device comprises the steps of providing a substrate, carrying out an opening process on the substrate to form a perforation in the substrate, carrying out a first detection step on the substrate to obtain a first detection result, and judging whether the perforation state is abnormal according to the first detection result. When the perforation state is judged to be abnormal, a perforation reworking process is carried out on the substrate, wherein the perforation reworking process comprises a reworking direction judging step for judging whether the substrate needs to be turned over when the perforation reworking process is carried out.

Inventors

• LIN HONGZHENG
• CHEN ZHAOREN
• Zeng Fuguang

Assignees

• 群创光电股份有限公司

Dates

Publication Date

20260505

Application Date

20250627

Priority Date

20241030

Claims (10)

1. 1. A method of manufacturing an electronic device, comprising: Providing a substrate; performing an opening process on the substrate to form a through hole in the substrate; performing a first inspection step on the substrate to obtain a first inspection result, and Judging whether the perforation state is abnormal or not according to the first detection result; And when the perforation state is judged to be abnormal, performing a perforation reworking process on the substrate, wherein the perforation reworking process comprises a reworking direction judging step for judging whether the substrate needs to be overturned when the perforation reworking process is performed.
2. 2. The method according to claim 1, wherein the first detection result includes a top diameter and a bottom diameter of the through hole, and the rework direction determining step includes determining that the substrate is not required to be flipped when the top diameter is smaller than the bottom diameter, and flipping the substrate when the top diameter is larger than the bottom diameter.
3. 3. The method of claim 2, wherein the piercing rework process comprises: Providing a light on a first side of the substrate, the light passing through the through hole, and receiving the light on a second side of the substrate using a sensor to locate the through hole, wherein the first side is adjacent to the larger one of the top diameter and the bottom diameter, and the second side is opposite to the first side, and Providing a laser on the second side of the substrate to enlarge the perforation.
4. 4. The method of manufacturing an electronic device according to claim 3, wherein a wavelength of the laser is 400 nm or less.
5. 5. The method of manufacturing an electronic device according to claim 1, wherein the first detection result includes at least one of a positional accuracy, a top diameter, a waist diameter, a bottom diameter, a top roundness, a bottom roundness, a top-to-bottom concentricity, a surface roughness, a top length, a top width, a bottom length, a bottom width, a top profile shape, and a bottom profile shape of the perforation.
6. 6. The method according to claim 1, wherein determining whether the state of the through hole is abnormal according to the first detection result comprises comparing the first detection result with a detection standard stored in a control device.
7. 7. The method according to claim 6, further comprising providing the first detection result to the control device after the first detection step is performed.
8. 8. An electronic device, comprising: a substrate including a through hole; A conductive element disposed in the through hole; A circuit structure arranged on one side of the substrate, and An electronic unit arranged on the circuit structure and electrically connected with the conductive element through the circuit structure; wherein the perforation has a top diameter and a bottom diameter, a ratio of the top diameter to the bottom diameter being greater than or equal to 0.8 and less than or equal to 1.2.
9. 9. The electronic device of claim 8, wherein a difference between the top diameter and the bottom diameter ranges from-15 microns to 15 microns.
10. 10. The electronic device of claim 8, wherein the substrate further comprises another perforation, a difference between a top diameter of the other perforation and the top diameter of the perforation ranges from-15 microns to 15 microns, and a difference between a bottom diameter of the other perforation and the bottom diameter of the perforation ranges from-15 microns to 15 microns.

Description

Electronic device and method for manufacturing the same Technical Field The present invention relates to an electronic device and a method for manufacturing the same, and more particularly, to a method for manufacturing an electronic device including a step of inspecting a substrate, and a manufactured electronic device. Background In the existing electronic device, the through holes may be formed in the substrate, and conductive materials may be disposed in the through holes as wires for transmitting electrical signals. However, with the trend of smaller and smaller sizes and higher aspect ratios and densities, the difficulty in detecting subsequent defects of the through holes is affected. In addition, quality inspection of the vias of the substrate is also an issue to be discussed. Disclosure of Invention One of the objectives of the present invention is to provide a method for manufacturing an electronic device and the manufactured electronic device, in which the inspection step is performed during the manufacturing process to determine the state of the through hole, and the rework process is performed to reduce the abnormality, so as to improve the production efficiency and the yield and reliability of the electronic device. An embodiment of the invention provides a manufacturing method of an electronic device, which comprises the steps of providing a substrate, carrying out an opening process on the substrate to form a perforation in the substrate, carrying out a first detection step on the substrate to obtain a first detection result, and judging whether the perforation state is abnormal according to the first detection result. When the perforation state is judged to be abnormal, a perforation reworking process is carried out on the substrate, wherein the perforation reworking process comprises a reworking direction judging step for judging whether the substrate needs to be overturned when the perforation reworking process is carried out. An embodiment of the invention provides an electronic device, which comprises a substrate, a conductive element, a circuit structure and an electronic unit. The substrate includes a through hole, and the conductive element is disposed in the through hole. The circuit structure is arranged on one side of the substrate, and the electronic unit is arranged on the circuit structure and is electrically connected with the conductive element through the circuit structure. Wherein the perforations have a top diameter to bottom diameter ratio of greater than or equal to 0.8 and less than or equal to 1.2. Drawings Fig. 1 is a flow chart of a method for manufacturing an electronic device according to an embodiment of the invention. Fig. 2A is a schematic top view illustrating a portion of a manufacturing process of an electronic device according to an embodiment of the invention. FIG. 2B is a schematic partial cross-sectional view illustrating a portion of the manufacturing process of the electronic device shown in FIG. 2A. Fig. 3 to 5 are schematic views illustrating a portion of a manufacturing method of an electronic device according to an embodiment of the invention. Fig. 6 to 9 are schematic views illustrating a portion of a manufacturing method of an electronic device according to an embodiment of the invention. Fig. 10 is a schematic view illustrating a portion of a manufacturing process of an electronic device according to another embodiment of the invention. Fig. 11 is a schematic cross-sectional view of an electronic device according to an embodiment of the invention. Reference numerals illustrate BL-buffer layer; CE-conductive elements; CL-conductive layer; CST-circuit structure, db-bottom diameter, dt-top diameter, dw-waist diameter, ED-electronics, EU-electronics, FL1, FL 2-fill layer, IL-insulation layer, L-light, LM-light module, lt-top length, MA 1-region, PBx, PBy, PBd-pitch, pd-third pitch, PMd-sixth pitch, PMx-fourth pitch, PMy-fifth pitch, PRL-protective layer, px-first pitch, py-second pitch, R-laser, R1-first laser, RE-recess, RM-laser module, S1-first side, S100, S200, S300, S400, S500, S410, S420, S430, S440, S310-step, S2-second side, SB-substrate, SBa-upper surface, SBb-lower surface, SBM-marker, SR-sensor, VA, 1, VB-perforation, VAS-side wall, W-width, W-X-top direction. Detailed Description The following detailed description of the present invention is provided in connection with specific embodiments and the accompanying drawings, and it is to be noted that, for ease of understanding and brevity of the drawings, various drawings of the present invention depict only a part of the apparatus or structure, and specific elements of the drawings are not drawn to actual scale. In addition, the number and size of the elements in the drawings are illustrative only and are not intended to limit the scope of the invention. Certain terms are used throughout the description and claims to refer to particular components. It will be appreciated by those of ordinary