CN-121985795-A - Preparation method of high-flexibility semiconductor substrate

Abstract

The invention discloses a preparation method of a high-flexibility semiconductor substrate, which comprises the steps of cleaning a first surface and a second surface of a silicon-based material layer, respectively coating a high polymer material on the first surface and the second surface after cleaning, drying to correspondingly form a first high polymer layer and a second high polymer layer, respectively coating a metal material on the surfaces of the first high polymer layer and the second high polymer layer, drying to correspondingly form the first metal layer and the second metal layer, and annealing the semiconductor substrate formed by the first metal layer, the first high polymer layer, the silicon-based material layer, the second high polymer layer and the second metal layer to obtain the high-flexibility semiconductor substrate. By adopting the technical scheme of the invention, the semiconductor substrate with high flexibility can be prepared, so that the flexibility and strength of the semiconductor substrate are improved while the electrical property of the silicon material is maintained, and the reliability and process controllability of the semiconductor device are improved.

Inventors

• ZHANG TIANZHU

Assignees

• 东莞新科技术研究开发有限公司

Dates

Publication Date

20260505

Application Date

20241028

Claims (5)

1. 1. A method for manufacturing a highly flexible semiconductor substrate, comprising: cleaning the first surface and the second surface of the silicon-based material layer, wherein the first surface is opposite to the second surface; Respectively coating a high polymer material on the first surface and the second surface after cleaning, and drying to correspondingly form a first high polymer layer and a second high polymer layer; Coating metal materials on the surfaces of the first polymer layer and the second polymer layer respectively, and drying to correspondingly form a first metal layer and a second metal layer; And annealing the semiconductor substrate formed by the first metal layer, the first polymer layer, the silicon-based material layer, the second polymer layer and the second metal layer to obtain the semiconductor substrate with high flexibility.
2. 2. The method for manufacturing a highly flexible semiconductor substrate according to claim 1, wherein the polymer material is at least one of polyethylene terephthalate, polyimide, polyether ketone, and polycarbonate.
3. 3. The method of manufacturing a highly flexible semiconductor substrate according to claim 1, wherein the metal material is at least one of aluminum, tungsten, copper, and titanium.
4. 4. The method for producing a highly flexible semiconductor substrate according to claim 1, wherein the annealing temperature of the annealing treatment is 500 ℃.
5. 5. The method for producing a highly flexible semiconductor substrate according to claim 1, wherein the annealing time of the annealing treatment is 2 hours.

Description

Preparation method of high-flexibility semiconductor substrate Technical Field The invention relates to the technical field of semiconductors, in particular to a preparation method of a high-flexibility semiconductor substrate. Background The semiconductor substrate is generally made of a silicon-based material, which is relatively brittle and is easily broken or damaged, which is unfavorable for processing and use of the semiconductor device, and therefore, how to improve the flexibility of the semiconductor substrate is a problem to be solved. Disclosure of Invention The embodiment of the invention aims to provide a preparation method of a high-flexibility semiconductor substrate, which can prepare the high-flexibility semiconductor substrate by utilizing different materials and layer sequence structures thereof, so that the flexibility and strength of the semiconductor substrate are improved while the electrical property of a silicon material is maintained, and the reliability and process controllability of a semiconductor device are improved. In order to achieve the above object, an embodiment of the present invention provides a method for manufacturing a semiconductor substrate with high flexibility, including: cleaning the first surface and the second surface of the silicon-based material layer, wherein the first surface is opposite to the second surface; Respectively coating a high polymer material on the first surface and the second surface after cleaning, and drying to correspondingly form a first high polymer layer and a second high polymer layer; Coating metal materials on the surfaces of the first polymer layer and the second polymer layer respectively, and drying to correspondingly form a first metal layer and a second metal layer; And annealing the semiconductor substrate formed by the first metal layer, the first polymer layer, the silicon-based material layer, the second polymer layer and the second metal layer to obtain the semiconductor substrate with high flexibility. Further, the polymer material is at least one of polyethylene terephthalate, polyimide, polyether ketone and polycarbonate. Further, the metal material is at least one of aluminum, tungsten, copper and titanium. Further, the annealing temperature of the annealing treatment is 500 ℃. Further, the annealing time of the annealing treatment is 2h. Compared with the prior art, the embodiment of the invention provides a preparation method of a high-flexibility semiconductor substrate, which comprises the steps of firstly cleaning a first surface and a second surface of a silicon-based material layer, wherein the first surface is opposite to the second surface, then respectively coating a high polymer material on the cleaned first surface and second surface, drying the cleaned first surface and second surface to correspondingly form a first high polymer layer and a second high polymer layer, respectively coating a metal material on the surfaces of the first high polymer layer and the second high polymer layer, drying the surfaces of the first high polymer layer and the second high polymer layer to correspondingly form the first metal layer and the second metal layer, and finally annealing the semiconductor substrate formed by the first metal layer, the first high polymer layer, the silicon-based material layer, the second high polymer layer and the second metal layer to obtain the high-flexibility semiconductor substrate. The embodiment of the invention can prepare the semiconductor substrate with high flexibility by using different materials and the layer sequence structure thereof, so that the flexibility and the strength of the semiconductor substrate are improved while the electrical property of the silicon material is maintained, and the reliability and the process controllability of the semiconductor device are improved. Drawings Fig. 1 is a flow chart of a preferred embodiment of a method for fabricating a highly flexible semiconductor substrate according to the present invention. Detailed Description The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention. An embodiment of the present invention provides a method for preparing a highly flexible semiconductor substrate, and referring to fig. 1, a flowchart of a preferred embodiment of the method for preparing a highly flexible semiconductor substrate provided by the present invention is shown, where the method includes steps S11 to S14: Step S11, cleaning the first surface and the second surface of the silicon-based material layer, wherei