CN-121985796-A - Wafer laser annealing control method, wafer laser annealing method and related devices

CN121985796ACN 121985796 ACN121985796 ACN 121985796ACN-121985796-A

Abstract

The application discloses a wafer laser annealing control method, a wafer laser annealing method and a related device, wherein the wafer laser annealing control method comprises the steps of shaping laser beams to enable processing parameter information of the shaped laser beams to reach preset requirements, setting a using format of a vibrating mirror according to maximum format limitation and spot distortion permission requirements of a field mirror, determining a calibrated scanning speed and scanning line spacing according to the processing parameter information, judging whether wafer size data are smaller than or equal to the using format of the vibrating mirror, if yes, annealing the wafer by adopting a vibrating mirror scanning mode, otherwise, annealing a first area of the wafer by adopting a vibrating mirror scanning mode, and annealing a second area of the wafer by adopting a vibrating mirror scanning and displacement table linkage mode, wherein the first area is an area of the wafer in the using range of the vibrating mirror, and the second area is the rest area of the wafer except the first area. By the mode, the processing efficiency can be improved.

Inventors

WANG YUE
ZHU LIANG
Jin Qianchi
CHEN SHUNAN

Assignees

浙江求是半导体设备有限公司
浙江晶盛机电股份有限公司

Dates

Publication Date: 20260505
Application Date: 20251230

Claims (13)

1. The control method for the wafer laser annealing is characterized by comprising the following steps of: Shaping a laser beam generated by a laser generator to enable the shaped processing parameter information of the laser beam to reach a preset requirement, wherein the processing parameter information comprises the spot size of the laser beam, and the preset requirement comprises that the spot size is smaller than a preset threshold value; setting a using format of the galvanometer according to the maximum format limit and the spot distortion allowance requirement of the field lens; determining a calibration scanning speed and a scanning line spacing according to the processing parameter information; Acquiring wafer size data of a wafer, and judging whether the wafer size data is smaller than or equal to the using breadth of the vibrating mirror; If yes, annealing the wafer by adopting a first scanning mode, wherein the first scanning mode is to perform galvanometer scanning according to the calibrated scanning speed and the scanning line spacing; and if not, carrying out annealing processing on the wafer by adopting a second scanning mode, wherein the second scanning mode is to carry out annealing processing on a first area of the wafer by adopting the first scanning mode, and carry out annealing processing on a second area of the wafer by adopting a galvanometer scanning and displacement table linkage mode, wherein the first area is an area of the wafer in a range of a galvanometer using breadth, the second area is other areas of the wafer except the first area, and the galvanometer scanning and displacement table linkage mode is to firstly move the second area of the wafer into the range of the galvanometer using breadth through a displacement table, and then make the combination speed of the displacement table and the galvanometer reach the calibration scanning speed and scan at the scanning line spacing.
2. The method for controlling laser annealing of a wafer according to claim 1, wherein the processing parameter information further includes pulse period, spot shape, spot uniformity of the laser beam; the preset requirements further comprise that the light spot shape is square or round, and the light spot uniformity is greater than 90%; the calibrated scanning speed is 500-5000mm/s.
3. The method according to claim 2, wherein when the spot shape is square, the spot size is smaller than a preset threshold, specifically the side length of the spot is smaller than 200 μm; when the light spot is circular, the light spot size is smaller than a preset threshold, and specifically the diameter of the light spot is smaller than 200 mu m.
4. The method of claim 2, wherein the step of determining the nominal scan speed and scan line spacing based on the process parameter information comprises: determining the light spot overlapping rate according to the light spot shape and the annealing process requirement; calculating the calibrated scanning speed and the scanning line spacing according to the light spot overlapping rate, the pulse period and the light spot size; The light spot overlapping rate, the pulse period, the light spot size and the calibrated scanning speed meet the following formulas: v=v1+v2; Wherein overlap is the spot overlap ratio; T is the pulse period, a is the light spot size, a is the side length of the light spot when the light spot shape is square, a is the diameter of the light spot when the light spot shape is round, v is the calibration scanning speed, and v1 is the displacement table speed and v2 is the galvanometer speed when annealing processing is performed by adopting a galvanometer scanning and displacement table linkage mode.
5. A laser annealing apparatus, characterized in that the laser annealing apparatus comprises: a process chamber, wherein a displacement table is arranged in the process chamber and is used for bearing a wafer, and the displacement table is configured to drive the wafer to move along an X axis, a Y axis and a Z axis; a laser generator for generating a laser beam; The beam shaping assembly is used for shaping the laser beam generated by the laser generator to enable the processing parameter information of the shaped laser beam to reach a preset requirement, wherein the processing parameter information comprises the spot size of the laser beam, and the preset requirement comprises that the spot size is smaller than a preset threshold value; The scanning assembly comprises a galvanometer and a field lens, wherein the galvanometer is used for reflecting the shaped laser beam, and the field lens is used for focusing the shaped laser beam reflected by the galvanometer so as to irradiate light spots on the surface of the wafer; The wafer annealing device comprises a displacement table, a control module, a first scanning mode, a second scanning mode and a linkage scanning mode, wherein the control module is respectively and electrically connected with the displacement table and the vibration table, when wafer size data of a wafer is smaller than or equal to a vibration mirror using breadth of the vibration mirror, the control module is used for controlling the vibration mirror to carry out annealing processing on the wafer in a first scanning mode, the first scanning mode is a region of the wafer in a scope of the vibration mirror using breadth and a scanning line spacing, the vibration mirror scanning is carried out according to a calibration scanning speed, when the wafer size data is larger than the vibration mirror using breadth, the control module is used for controlling the vibration mirror and the displacement table to carry out annealing processing on the wafer in a second scanning mode, the second scanning mode is used for carrying out annealing processing on a first region of the wafer in the first scanning mode, and the vibration mirror using breadth and the displacement table are in a linkage scanning mode, and the scanning speed of the vibration mirror is moved to the scope of the vibration mirror using breadth and the displacement table is achieved.
6. The laser annealing apparatus of claim 5, further comprising an optical path assembly between the laser generator and the beam shaping assembly, the optical path assembly comprising an optical path collimation module for adjusting collimation of the laser beam and an energy attenuation module for adjusting power of the laser beam.
7. The laser annealing device according to claim 5, wherein the beam shaping assembly comprises a beam expander for increasing the diameter of the laser beam and a diffraction optical element for shaping the laser beam so that the spot shape and the spot uniformity of the shaped laser beam meet preset requirements.
8. The laser annealing apparatus according to claim 5, wherein a carrier tray for carrying and fixing the wafer by vacuum suction is provided on the displacement stage.
9. A wafer laser annealing method applied to the laser annealing apparatus according to any one of claims 5 to 8, characterized in that the wafer laser annealing method comprises: Placing a wafer to be annealed on the displacement table; annealing the wafer to be annealed by adopting the control method of the wafer laser annealing according to any one of claims 1 to 4; and carrying out resistance non-uniformity test on the annealed wafer by using sheet resistance test equipment, and judging whether the annealed wafer meets the resistance non-uniformity requirement or not based on a test result.
10. The wafer laser annealing method of claim 9 wherein said resistance non-uniformity requirement is a resistance non-uniformity of less than 3%.
11. The control device for wafer laser annealing is characterized by comprising: The shaping module is used for shaping the laser beam generated by the laser generator to enable the processing parameter information of the shaped laser beam to reach the preset requirement, wherein the processing parameter information comprises the spot size of the laser beam, and the preset requirement comprises that the spot size is smaller than a preset threshold value; the galvanometer selection module is used for setting the using format of the galvanometer according to the maximum format limit and the spot distortion allowance requirement of the field lens; The calculation module is used for determining a calibration scanning speed and a scanning line spacing according to the processing parameter information; the judging module is used for acquiring wafer size data of the wafer and judging whether the wafer size data is smaller than or equal to the using width of the vibrating mirror; And when the wafer size data is greater than the using breadth of the vibrating mirror, the processing module is used for carrying out annealing processing on a first area of the wafer by adopting the first scanning mode, and carrying out annealing processing on a second area of the wafer by adopting the first scanning mode and adopting a vibrating mirror scanning and displacement table linkage mode, wherein the first area is an area of the wafer positioned in the range of the using breadth of the vibrating mirror, the second area is the rest area of the wafer except the first area, and the vibrating mirror scanning and displacement table is a scanning range of the using breadth of the vibrating mirror by firstly moving the second area of the wafer to the vibrating mirror through the displacement table, and then carrying out annealing processing on the second area of the wafer by adopting the vibrating mirror scanning and displacement table linkage mode, wherein the first area is the area of the wafer positioned in the range of the using breadth of the vibrating mirror, and the second area is the rest area of the wafer except the first area, and the scanning line spacing of the vibrating mirror is reached by the scanning speed of the vibrating mirror.
12. An electronic device comprising a memory and a processor coupled to each other, the processor being configured to execute program instructions stored in the memory to implement the method of controlling laser annealing of a wafer according to any one of claims 1 to 4 and/or the method of laser annealing of a wafer according to any one of claims 9 to 10.
13. A computer readable storage medium storing program instructions executable to implement the method of controlling wafer laser annealing according to any one of claims 1 to 4 and/or the method of wafer laser annealing according to any one of claims 9 to 10.

Description

Wafer laser annealing control method, wafer laser annealing method and related devices Technical Field The present application relates to the field of laser annealing technologies, and in particular, to a control method for wafer laser annealing, a wafer laser annealing method, and related devices. Background The SiC wafer laser annealing equipment mostly adopts laser beams with larger beam quality factors, and is matched with a micro lens array to shape laser spots, the shaped spots are square spots or linear spots with larger sizes, then the wafer is fixed on a displacement table, and scanning annealing of laser on the whole SiC wafer is realized by means of the displacement table moving method. However, in the existing wafer laser annealing process, when annealing a large-size wafer, only a large-caliber field lens needs to be arranged by using a galvanometer for scanning, and meanwhile, the problem that a light spot is distorted by the edge processing of the field lens to influence the scanning uniformity possibly occurs. Disclosure of Invention The application provides a wafer laser annealing control method, a wafer laser annealing method and a related device, so as to improve processing efficiency. The wafer laser annealing control method comprises the steps of shaping laser beams generated by a laser generator, enabling processing parameter information of the shaped laser beams to reach preset requirements, enabling the processing parameter information to comprise spot sizes of the laser beams, enabling the preset requirements to comprise spot sizes smaller than a preset threshold value, setting a vibration mirror using breadth according to maximum breadth limit and spot distortion permission requirements of a field mirror, determining a calibration scanning speed and a scanning line spacing according to the processing parameter information, obtaining wafer size data of a wafer, judging whether the wafer size data is smaller than or equal to the scanning breadth used by the vibration mirror, conducting annealing processing on the wafer by adopting a first scanning mode, conducting annealing processing on the wafer by adopting a second scanning mode according to the calibration scanning speed and the scanning line spacing, enabling the second scanning mode to be conducting annealing processing on the wafer by adopting a first scanning mode, enabling the vibration mirror to be located in a first scanning area, enabling the vibration mirror to be located in a scanning area, and enabling the wafer to be located in the other area to be located in the scanning area, and enabling the vibration mirror to be located in the first scanning area to be located in the scanning area, and enabling the vibration mirror to be located in the other area to be located in the scanning area. The processing parameter information further comprises a pulse period, a light spot shape and light spot uniformity of the laser beam, the preset requirements further comprise that the light spot shape is square or round, the light spot uniformity is greater than 90%, and the calibrated scanning speed is 500-5000mm/s. When the light spot shape is square, the light spot size is smaller than a preset threshold value, specifically, the side length of the light spot is smaller than 200 mu m, and when the light spot shape is round, the light spot size is smaller than the preset threshold value, specifically, the diameter of the light spot is smaller than 200 mu m. The step of determining the calibration scanning speed and the scanning line spacing according to the processing parameter information comprises the steps of determining a light spot overlapping rate according to the light spot shape and the annealing process requirement, and calculating the calibration scanning speed and the scanning line spacing according to the light spot overlapping rate, the pulse period and the light spot size, wherein the light spot overlapping rate, the pulse period, the light spot size and the calibration scanning speed satisfy the following formula: v=v1+v2; Wherein overlap is the spot overlap ratio; T is the pulse period, a is the light spot size, a is the side length of the light spot when the light spot shape is square, a is the diameter of the light spot when the light spot shape is round, v is the calibration scanning speed, and v1 is the displacement table speed and v2 is the galvanometer speed when annealing processing is performed by adopting a galvanometer scanning and displacement table linkage mode. In order to solve the technical problems, the application also provides a laser annealing device, which comprises a process chamber, wherein a displacement table is arranged in the process chamber and is used for bearing a wafer, and the displacement table is configured to drive the wafer to move along an X axis, a Y axis and a Z axis; the laser beam annealing device comprises a laser generator, a beam shaping component, a control module, a scannin