CN-121985804-A - Semiconductor device and method for manufacturing the same

Abstract

The invention discloses a semiconductor device and a preparation method thereof, and relates to the technical field of semiconductors, wherein the preparation method comprises the steps of providing a semiconductor substrate; the method comprises the steps of sequentially forming a first barrier layer, a first sacrificial layer and a second barrier layer on a semiconductor substrate, forming a first supporting part and at least two first conducting parts, wherein the first supporting part penetrates through the second barrier layer and the first sacrificial layer, and the first conducting parts penetrate through the second barrier layer, the first sacrificial layer and the first barrier layer and are electrically connected with the semiconductor substrate, and removing the first sacrificial layer to form a first cavity. Because the dielectric constant of air is lower, parasitic capacitance between the two first conductive parts can be effectively reduced, and the performance of the semiconductor device is further improved.

Inventors

• HUANG QIUMING

Assignees

• 深圳市鹏新旭技术有限公司

Dates

Publication Date

20260505

Application Date

20260325

Claims (17)

1. 1. A method of manufacturing a semiconductor device, the method comprising the steps of: providing a semiconductor substrate, and sequentially forming a first barrier layer, a first sacrificial layer and a second barrier layer on the semiconductor substrate; forming a first supporting part and at least two first conductive parts, wherein the first supporting part penetrates through the second barrier layer and the first sacrificial layer, and the first conductive parts penetrate through the second barrier layer, the first sacrificial layer and the first barrier layer and are electrically connected with the semiconductor substrate; and removing the first sacrificial layer to form a first cavity.
2. 2. The method of manufacturing according to claim 1, wherein the step of forming the first supporting portion and the at least two first conductive portions includes: forming a plurality of first deposition grooves penetrating through the second barrier layer and the first sacrificial layer; forming a first support material layer on the second barrier layer in the first deposition groove; Forming at least two second deposition grooves penetrating the first support material layer, the second barrier layer, the first sacrificial layer and the first barrier layer; forming a conductive material layer on the first support material layer in the second deposition groove; the first support material layer and the conductive material layer above the second barrier layer are removed to form the first support portion in the first deposition slot and the first conductive portion in the second deposition slot.
3. 3. The method of claim 1, wherein the material of the first sacrificial layer is amorphous carbon, and the removing the first sacrificial layer to form the first cavity comprises: etching the second barrier layer to form a first opening exposing the first sacrificial layer; And oxidizing and removing the first sacrificial layer to form the first cavity.
4. 4. The method of manufacturing as claimed in claim 3, wherein after the step of forming the first supporting portion and the at least two first conductive portions, the step of forming the first cavity further comprises: and etching the second barrier layer to form a second opening exposing the first sacrificial layer.
5. 5. The method of manufacturing of claim 4, wherein the step of forming the first cavity further comprises, after: depositing a second supporting material layer on the surface of the second barrier layer and in the first cavity; and removing the second support material layer on the second barrier layer to form a second support part extending from the first barrier layer towards the second opening.
6. 6. The method of any one of claims 1 to 5, wherein the step of forming the first cavity further comprises, after: Forming a third barrier layer, a second sacrificial layer and a fourth barrier layer on the second barrier layer in sequence; Forming a third supporting part and at least two second conductive parts, wherein the third supporting part penetrates through the fourth barrier layer and the second sacrificial layer, and the second conductive parts penetrate through the fourth barrier layer, the second sacrificial layer and the third barrier layer; and removing the second sacrificial layer to form a second cavity.
7. 7. The method of manufacturing according to claim 6, wherein the step of forming the second cavity comprises: Forming a window exposing the second sacrificial layer on the fourth barrier layer; removing the second sacrificial layer to form the second cavity; a fourth support is formed extending from the third barrier layer toward the window.
8. 8. The method of manufacturing of claim 6, wherein the step of forming the second cavity further comprises, after: sequentially forming a fifth barrier layer, a third sacrificial layer and a sixth barrier layer on the fourth barrier layer; Forming a fifth supporting part and at least two third conductive parts, wherein the fifth supporting part penetrates through the sixth barrier layer and the third sacrificial layer, and the third conductive parts penetrate through the sixth barrier layer, the third sacrificial layer and the fifth barrier layer; and removing the third sacrificial layer to form a third cavity.
9. 9. The method of manufacturing of claim 1, wherein after the step of forming the first support portion and the at least two first conductive portions, the step of removing the first sacrificial layer, before the step of forming the first cavity, further comprises: Forming a third barrier layer, a second sacrificial layer and a fourth barrier layer on the second barrier layer in sequence; Forming a third supporting part and at least two second conductive parts, wherein the third supporting part penetrates through the fourth barrier layer and the second sacrificial layer, and the second conductive parts penetrate through the fourth barrier layer, the second sacrificial layer and the third barrier layer; sequentially forming a fifth barrier layer, a third sacrificial layer and a sixth barrier layer on the fourth barrier layer; And forming a fifth supporting part and at least two third conductive parts, wherein the fifth supporting part penetrates through the sixth barrier layer and the third barrier layer, and the third conductive part penetrates through the sixth barrier layer, the third sacrificial layer and the fifth barrier layer.
10. 10. The method of manufacturing according to claim 9, wherein the step of forming the first cavity comprises: forming a third opening to expose the first sacrificial layer, the second sacrificial layer, and the third sacrificial layer; and removing the first sacrificial layer, the second sacrificial layer and the third sacrificial layer to form the first cavity, the second cavity and the third cavity.
11. 11. The method of manufacturing of claim 10, wherein the step of forming the first cavity, the second cavity, and the third cavity further comprises, after: a fourth opening is formed, and the first barrier layer is exposed to the fourth opening; Depositing a third support material layer on the sixth barrier layer surface, the first cavity, the second cavity and the third cavity; And removing the third supporting material layer on the sixth barrier layer to form a sixth supporting part extending from the first barrier layer towards the fourth opening.
12. 12. A semiconductor device, the semiconductor device comprising: A semiconductor substrate; The metal interconnection layer is arranged on the semiconductor substrate and comprises a first barrier layer, a second barrier layer, a first supporting part and at least two first conductive parts; the first barrier layer is arranged on the semiconductor substrate, the second barrier layer is arranged at intervals on one side of the first barrier layer, which is away from the semiconductor substrate, and two ends of the first supporting part are respectively connected with the first barrier layer and the second barrier layer; The first cavity is formed between the first blocking layer and the second blocking layer, at least two first conductive parts are arranged in the first cavity at intervals along the direction parallel to the semiconductor substrate, one end of each first conductive part is connected with the semiconductor substrate, and the other end of each first conductive part is exposed on one side, away from the semiconductor substrate, of the second blocking layer.
13. 13. The semiconductor device of claim 12, wherein the metal interconnect layer further comprises a second support portion, two ends of the second support portion being connected to the first barrier layer and the second barrier layer, respectively, a cross-sectional area of the first support portion being smaller than a cross-sectional area of the second support portion.
14. 14. The semiconductor device according to claim 12 or 13, wherein the semiconductor device comprises a plurality of the metal interconnect layers, the plurality of the metal interconnect layers being sequentially stacked on the semiconductor base.
15. 15. The semiconductor device of claim 12, wherein the semiconductor device comprises two layers of the metal interconnect layer, the metal interconnect layer disposed on the semiconductor body comprising a first barrier layer, a second barrier layer, a first support, and at least two first conductive portions; the second cavity is formed between the third barrier layer and the fourth barrier layer, the third supporting portion and at least two second conductive portions are arranged in the second cavity, and two ends of the third supporting portion are respectively connected with the third barrier layer and the fourth barrier layer.
16. 16. The semiconductor device according to claim 15, further comprising a seventh support portion penetrating the fourth barrier layer, the third barrier layer, and the second barrier layer in a direction perpendicular to the semiconductor base, both ends of the seventh support portion being connected to the first barrier layer and the fourth barrier layer, respectively; Wherein the seventh support portion has a cross-sectional dimension in a direction parallel to the semiconductor substrate that is larger than the cross-sectional dimensions of the first support portion and the third support portion.
17. 17. The semiconductor device according to claim 15, further comprising a second support portion and a fourth support portion, wherein the second support portion is located in the first cavity, two ends of the first cavity are respectively connected with the first barrier layer and the second barrier layer, the fourth support portion is located in the second cavity, two ends of the fourth support portion are respectively connected with the third barrier layer and the fourth barrier layer, a cross-sectional area of the second support portion is larger than a cross-sectional area of the first support portion, and a cross-sectional area of the fourth support portion is larger than a cross-sectional area of the third support portion.

Description

Semiconductor device and method for manufacturing the same Technical Field The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a preparation method thereof. Background With the continuous progress of the semiconductor manufacturing process, the metal interconnection layer structure in the semiconductor device is more and more complex to adapt to higher density integration, and the multilayer metal wiring technology is widely used to realize high density signal transmission and interconnection. However, as the physical spacing between metal interconnect lines continues to shrink, the parasitic capacitance per unit length also increases significantly, and the increasing parasitic capacitance results in an increase in RC delay time. Compared with the continuously accelerated switching speed of the transistor, the RC delay on the metal interconnection line has a larger proportion in the total delay, and becomes a key bottleneck for restricting the overall operating frequency and the signal transmission speed of the semiconductor device to be further improved. Disclosure of Invention The invention mainly aims to provide a semiconductor device and a preparation method thereof, and aims to solve the problem of larger parasitic capacitance between metal interconnection wires in the existing semiconductor device. In order to achieve the above object, the present invention provides a method for manufacturing a semiconductor device, the method comprising the steps of: providing a semiconductor substrate, and sequentially forming a first barrier layer, a first sacrificial layer and a second barrier layer on the semiconductor substrate; forming a first supporting part and at least two first conductive parts, wherein the first supporting part penetrates through the second barrier layer and the first sacrificial layer, and the first conductive parts penetrate through the second barrier layer, the first sacrificial layer and the first barrier layer and are electrically connected with the semiconductor substrate; and removing the first sacrificial layer to form a first cavity. In an embodiment of the present invention, the step of forming the first supporting portion and the at least two first conductive portions includes: forming a plurality of first deposition grooves penetrating through the second barrier layer and the first sacrificial layer; forming a first support material layer on the second barrier layer in the first deposition groove; Forming at least two second deposition grooves penetrating the first support material layer, the second barrier layer, the first sacrificial layer and the first barrier layer; forming a conductive material layer on the first support material layer in the second deposition groove; the first support material layer and the conductive material layer above the second barrier layer are removed to form the first support portion in the first deposition slot and the first conductive portion in the second deposition slot. In an embodiment of the present invention, the material of the first sacrificial layer is amorphous carbon, and the step of removing the first sacrificial layer to form the first cavity includes: etching the second barrier layer to form a first opening exposing the first sacrificial layer; And oxidizing and removing the first sacrificial layer to form the first cavity. In an embodiment of the present invention, after the step of forming the first supporting portion and the at least two first conductive portions, the step of forming the first cavity further includes: and etching the second barrier layer to form a second opening exposing the first sacrificial layer. In an embodiment of the present invention, the step of forming the first cavity further includes: depositing a second supporting material layer on the surface of the second barrier layer and in the first cavity; and removing the second support material layer on the second barrier layer to form a second support part extending from the first barrier layer towards the second opening. In an embodiment of the present invention, the step of forming the first cavity further includes: Forming a third barrier layer, a second sacrificial layer and a fourth barrier layer on the second barrier layer in sequence; Forming a third supporting part and at least two second conductive parts, wherein the third supporting part penetrates through the fourth barrier layer and the second sacrificial layer, and the second conductive parts penetrate through the fourth barrier layer, the second sacrificial layer and the third barrier layer; and removing the second sacrificial layer to form a second cavity. In an embodiment of the present invention, the step of forming the second cavity includes: Forming a window exposing the second sacrificial layer on the fourth barrier layer; removing the second sacrificial layer to form the second cavity; a fourth support is formed extending from the t