CN-121985815-A - Semiconductor structure and manufacturing method thereof

Abstract

The embodiment of the disclosure discloses a semiconductor structure and a manufacturing method thereof, wherein the manufacturing method comprises the steps of forming a sacrificial gate coating a semiconductor main body part area; the semiconductor body extends along a first direction and penetrates through the sacrificial gate, and the sacrificial gate extends along a second direction; etching one side of the sacrificial gate in the third direction to form a first groove extending along the first direction, wherein the first groove penetrates through the sacrificial gate in the first direction, the bottom of the first groove is exposed out of the sacrificial gate, a plane formed by the second direction and the first direction intersects with the third direction, the sacrificial gate at the bottom of the first groove is etched to form a first opening extending along the third direction, the first opening is located between two adjacent semiconductor bodies, residual sacrificial materials in the first opening are oxidized to form an oxidation layer, the oxidation layer is removed to form a second opening penetrating through the sacrificial gate in the third direction, and the second opening and the first groove are filled to form a first isolation structure.

Inventors

• YANG XIAOQIN
• ZHOU XIAOLONG

Assignees

• 深圳市鹏芯微集成电路制造有限公司

Dates

Publication Date

20260505

Application Date

20241029

Claims (10)

1. 1. A method of fabricating a semiconductor structure, comprising: forming a sacrificial gate covering a semiconductor body portion region, wherein the semiconductor body extends along a first direction and penetrates through the sacrificial gate, and the sacrificial gate extends along a second direction; Etching one side of the sacrificial gate in a third direction to form a first groove extending along the first direction, wherein the first groove penetrates through the sacrificial gate along the first direction, the bottom of the first groove exposes the sacrificial gate, and a plane formed by the second direction and the first direction intersects with the third direction; Etching the sacrificial gate at the bottom of the first groove to form a first opening extending along the third direction, wherein the first opening is positioned between two adjacent semiconductor bodies; oxidizing the sacrificial material remaining in the first opening to form an oxide layer; Removing the oxide layer to form a second opening penetrating the sacrificial gate along the third direction; and filling the second opening and the first groove to form a first isolation structure.
2. 2. The method of manufacturing according to claim 1, further comprising: filling at least the space between two adjacent sacrificial gates with a dielectric material, the dielectric material coating the semiconductor body; And etching the plurality of sacrificial gates and dielectric materials between two adjacent sacrificial gates to form the first groove, wherein the bottom of the first groove exposes the plurality of sacrificial gates, and the first groove penetrates through the plurality of sacrificial gates along the first direction.
3. 3. The method of manufacturing of claim 1, wherein the first opening extends through the sacrificial gate in the third direction, sidewalls of the first opening extending in the third direction being provided by the sacrificial gate; the method for forming the oxide layer comprises the following steps: And oxidizing the side wall of the first opening extending along the third direction to form the oxidation layer.
4. 4. The method of claim 1, wherein the first opening extends in the sacrificial gate along the third direction, sidewalls and bottom of the first opening are provided by the sacrificial gate; the method for forming the oxide layer comprises the following steps: and oxidizing the side wall and the bottom of the first opening to form the oxide layer.
5. 5. The method of claim 1, wherein an end of the semiconductor body in the third direction extends into the sacrificial gate along the third direction, a partial region of the semiconductor body being located between adjacent two of the sacrificial gates; the manufacturing method further comprises the following steps: A first dielectric layer is formed between the semiconductor body and the sacrificial gate, at least a portion of the first dielectric layer being surrounded by the sacrificial gate.
6. 6. The method of manufacturing according to claim 1, further comprising: and forming a second isolation structure, wherein the second isolation structure covers the side wall of the sacrificial gate extending along the third direction.
7. 7. The method of manufacturing according to claim 1, further comprising: removing the sacrificial gate to form a third trench extending in the second direction; And forming a gate structure in the third trench.
8. 8. A semiconductor structure, comprising: A semiconductor body extending in a first direction; A gate structure extending along a second direction intersecting the first direction, the gate structure wrapping a partial region of the semiconductor body; the semiconductor body penetrates through the gate structures along the first direction, and a partial area of the semiconductor body is positioned between two adjacent gate structures; a first dielectric layer between the semiconductor body and the gate structure, at least a portion of the first dielectric layer being surrounded by the gate structure; The first isolation structure is at least partially positioned between two adjacent semiconductor bodies, penetrates through the grid structure along a third direction, penetrates through the grid structure along the first direction, and a plane formed by the second direction and the first direction is intersected with the third direction.
9. 9. The semiconductor structure of claim 8, wherein the first isolation structure comprises: A first portion extending along the first direction, the first portion extending through a plurality of the gate structures along the first direction; And a plurality of second portions extending from the first portion along the third direction proximate the semiconductor body, the second portions corresponding to the gate structure and extending through the gate structure along the third direction.
10. 10. The semiconductor structure of claim 8, wherein the semiconductor structure further comprises: And the second isolation structure covers the side wall of the grid structure extending along the third direction.

Description

Semiconductor structure and manufacturing method thereof Technical Field The embodiment of the disclosure relates to the technical field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background In some semiconductor structure manufacturing processes, for the manufacturing processes of the three-dimensional transistor and the multi-channel field effect transistor, a sacrificial gate corresponding to the channel structure can be formed first, and then the sacrificial gate is replaced by a conductive material to form a gate. For a distribution of transistors, the sacrificial gate etch may be broken to form electrical isolation. The sacrificial gate is etched to form structures such as an opening, a groove and the like, some residual materials of the sacrificial gate can exist in the opening structure, and then after the structures such as a gate and the like are formed in the opening structure, the risks such as void defects, discharge and the like can be caused, so that the yield of the device is reduced. In view of this, there is still room for improvement in some semiconductor structure manufacturing processes. Disclosure of Invention According to some aspects of the embodiments of the present disclosure, a method for manufacturing a semiconductor structure is provided, which includes forming a sacrificial gate covering a semiconductor body portion region, wherein the semiconductor body extends along a first direction and penetrates through the sacrificial gate, the sacrificial gate extends along a second direction, the second direction intersects the first direction, etching one side of the sacrificial gate in a third direction to form a first trench extending along the first direction, the first trench penetrates through the sacrificial gate in the first direction, wherein a plane formed by the second direction and the first direction intersects the third direction, etching the sacrificial gate at the bottom of the first trench to form a first opening extending along the third direction, the first opening is located between two adjacent semiconductor bodies, oxidizing a residual sacrificial material in the first opening to form an oxide layer, removing the oxide layer to form a third trench penetrating through the sacrificial gate in the third direction, and forming the first isolation structure. In some embodiments, the manufacturing method further comprises filling at least the space between two adjacent sacrificial gates with a dielectric material, wherein the dielectric material covers the semiconductor body, etching the plurality of sacrificial gates and the dielectric material between the two adjacent sacrificial gates to form the first trench, wherein the bottom of the first trench exposes the plurality of sacrificial gates, and the first trench penetrates through the plurality of sacrificial gates along the first direction. In some embodiments, the first opening penetrates through the sacrificial gate along the third direction, a side wall of the first opening extending along the third direction is provided by the sacrificial gate, and the oxide layer forming method comprises oxidizing the side wall of the first opening extending along the third direction to form the oxide layer. In some embodiments, the first opening extends in the sacrificial gate along the third direction, sidewalls and a bottom of the first opening are provided by the sacrificial gate, and the oxide layer forming method includes oxidizing the sidewalls and the bottom of the first opening to form the oxide layer. In some embodiments, one end of the semiconductor body in the third direction extends into the sacrificial gate along the third direction, a partial region of the semiconductor body is located between two adjacent sacrificial gates, and the manufacturing method further comprises forming a first dielectric layer between the semiconductor body and the sacrificial gates, and at least part of the first dielectric layer is covered by the sacrificial gates. In some embodiments, the fabrication method further includes forming a second isolation structure that covers sidewalls of the sacrificial gate extending along the third direction. In some embodiments, the fabrication method further includes removing the sacrificial gate to form a third trench extending along the second direction, and forming a gate structure in the third trench. According to some aspects of embodiments of the present disclosure, there is provided a semiconductor structure including a semiconductor body extending in a first direction, a gate structure extending in a second direction intersecting the first direction and surrounding a partial region of the semiconductor body, the semiconductor body penetrating the gate structure in the first direction, the partial region of the semiconductor body being located between two adjacent gate structures, a first dielectric layer located between the semiconductor