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CN-121985817-A - Radiating structure of power chip and power module

CN121985817ACN 121985817 ACN121985817 ACN 121985817ACN-121985817-A

Abstract

The invention discloses a heat radiation structure of a power chip and a power module, belonging to the technical field of semiconductor power devices, the heat radiation structure of the power chip comprises the power chip and at least one heat radiation piece, the power chip comprises a substrate, at least one side of the heat dissipation piece is arranged on the area to be heat-dissipated of the substrate, the other side of the heat dissipation piece, which is away from the power chip, extends out of the power chip for heat dissipation, the heat dissipation piece is made of AlN, and a temperature sensing unit is arranged on the front side and/or the back side of the power chip. Through providing a structural design that promotes power chip marginal area radiating efficiency, set up the radiating piece directly on power chip, the radiating piece deviates from the side of power chip and then extends and be used for the heat dissipation, can increase local heat dissipation passageway for traditional structure.

Inventors

  • Fan Meicong

Assignees

  • 重庆芯联微电子有限公司

Dates

Publication Date
20260505
Application Date
20251230

Claims (9)

  1. 1. The utility model provides a heat radiation structure of power chip, its characterized in that includes power chip and at least heat dissipation piece, power chip includes the basement, at least one side setting of heat dissipation piece is in on the area of waiting to dispel the heat of basement, the heat dissipation piece deviates from the opposite side of power chip then extends power chip is used for the heat dissipation, the material of heat dissipation piece includes AlN, power chip's front and/or back still are provided with temperature sensing unit.
  2. 2. The heat dissipation structure of a power chip according to claim 1, wherein the base comprises a substrate, an epitaxial layer is disposed on top of the substrate, a plurality of first doped regions are disposed in the epitaxial layer, a front metal layer is disposed on at least a partial region of the top of the epitaxial layer, and the first doped regions are located at the bottom of the front metal layer.
  3. 3. The heat dissipating structure of claim 2 wherein a second doped region is further disposed in the epitaxial layer, the second doped region having opposing first and second portions, the first portion being located at a bottom of the front side metal layer and the second portion being exposed from the front side metal layer.
  4. 4. The heat dissipating structure of claim 3 wherein the heat dissipating member is columnar, and a plurality of the heat dissipating members are arranged in an array on a portion of the epitaxial layer exposed from the front metal layer.
  5. 5. The heat dissipating structure of claim 4 wherein a portion of said heat sink has a side surface connected to a side surface of said front side metal layer and a bottom surface connected to a top surface of said epitaxial layer.
  6. 6. A heat dissipation structure as defined in claim 3, wherein the epitaxial layer is exposed from a portion of the front side metal layer, and a passivation layer is disposed on at least a portion of the front side metal layer, and a top portion of the passivation layer is further covered with a protective layer.
  7. 7. The heat dissipating structure of claim 6, wherein a top of the heat dissipating member is not lower than a top surface of the protective layer.
  8. 8. The power module is characterized by comprising a power chip, wherein the power chip is provided with the heat dissipation structure of the power chip according to any one of claims 1-7, a first substrate is formed at the top of the power chip, a second substrate is formed at the bottom of the power chip, temperature sensing units are arranged in the first substrate and the second substrate, a first interface layer and a first radiator are sequentially arranged on the top surface of the first substrate, and a second interface layer and a second radiator are sequentially arranged on the bottom surface of the second substrate.
  9. 9. The power module of claim 8, further comprising a control module coupled to at least one of the temperature sensing units and configured to receive a temperature signal from the temperature sensing unit and determine whether to activate a heat dissipation enhancement mechanism based on one or more predetermined sets of temperature thresholds, the heat dissipation enhancement mechanism being responsive to an instruction from the control module to reduce an operating temperature of the power module by at least one of the first heat sink and the second heat sink.

Description

Radiating structure of power chip and power module Technical Field The present invention relates to the field of semiconductor power devices, and in particular, to a heat dissipation structure of a power chip and a power module. Background The power chip is easy to become a failure point in the edge area due to electric field concentration and heat accumulation due to high-pressure resistance, high-pressure resistance and high-frequency characteristics. The traditional heat dissipation scheme (such as an integral radiator) is difficult to solve the problem of local edge temperature rise in a targeted manner, so that the switching speed is reduced and the reliability is reduced. The prior art drawbacks include: 1. the thermal resistance of the edge is high, namely, the thermal expansion coefficient mismatch exists between the edge of the chip and the packaging substrate, and the heat conduction path is discontinuous; 2. The electric field concentration aggravates heating, and the electric field intensity of the edge terminal structure (such as JTE ring) is high, so that local Joule heat is generated. It should be noted that the information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art. Disclosure of Invention The invention aims to provide a heat dissipation structure of a power chip and a power module, so as to solve the problem of poor heat dissipation effect of the power chip. In order to solve the technical problems, the invention provides a heat dissipation structure of a power chip, which comprises the power chip and at least one heat dissipation piece, wherein the power chip comprises a substrate, at least one side of the heat dissipation piece is arranged on a region to be heat-dissipated of the substrate, the other side of the heat dissipation piece, which is away from the power chip, extends out of the power chip for dissipating heat, the heat dissipation piece is made of AlN, and a temperature sensing unit is arranged on the front side and/or the back side of the power chip. Preferably, the substrate comprises a substrate, an epitaxial layer is arranged on the top of the substrate, a plurality of first doping regions are arranged in the epitaxial layer, a front metal layer is arranged in at least part of the area on the top of the epitaxial layer, and the first doping regions are located at the bottom of the front metal layer. Preferably, a second doped region is further disposed in the epitaxial layer, the second doped region has a first portion and a second portion opposite to each other, the first portion is located at the bottom of the front metal layer, and the second portion is exposed from the front metal layer. Preferably, the heat dissipation element is columnar, and a plurality of heat dissipation elements are arranged on the part of the epitaxial layer exposed out of the front metal layer in an array manner. Preferably, a portion of the side surface of the heat sink is connected to the side surface of the front metal layer, and the bottom surface is connected to the top surface of the epitaxial layer. Preferably, a passivation layer is arranged on at least part of the front metal layer, and the top of the passivation layer is also covered with a protection layer. Preferably, the top of the heat sink is not lower than the top surface of the protective layer. The power module comprises a power chip, the power chip is provided with the heat radiation structure of the power chip, the top of the power chip is provided with a first substrate, the bottom of the power chip is provided with a second substrate, temperature sensing units are arranged in the first substrate and the second substrate, the top surface of the first substrate is provided with a first interface layer and a first radiator in sequence, and the bottom surface of the second substrate is provided with a second interface layer and a second radiator in sequence. Preferably, the power module further comprises a control module, the control module is connected to at least one temperature sensing unit and is configured to receive temperature signals from the temperature sensing unit, judge whether to start a heat dissipation enhancing mechanism according to one or more preset temperature thresholds, and the heat dissipation enhancing mechanism responds to an instruction sent by the control module and reduces the working temperature of the power module through at least one mode of the first radiator and the second radiator. In the heat radiation structure of the power chip, the heat radiation piece is directly connected to the substrate, compared with the traditional structure, a heat radiation channel is added, the heat radiation piece is arranged at the edge of the power chip, the heat radiation piece