CN-121985818-A - Double-sided heat dissipation half-bridge power module based on GaN device and preparation method

CN121985818ACN 121985818 ACN121985818 ACN 121985818ACN-121985818-A

Abstract

The invention discloses a double-sided heat dissipation half-bridge power module based on a GaN device and a preparation method thereof, belonging to the technical field of power electronic power modules, the power module comprises an upper ceramic substrate, a lower ceramic substrate, an upper tube GaN device, a lower tube GaN device and an input capacitor, wherein the lower ceramic substrate is arranged corresponding to the upper ceramic substrate, the upper tube GaN device and the lower tube GaN device are arranged between the upper ceramic substrate and the lower ceramic substrate, the input capacitor is integrated in the lower ceramic substrate, and the upper tube GaN device, the lower tube GaN device and the input capacitor form a power loop. The double-sided ceramic substrate has the advantages that the heat dissipation effect is improved by adopting the structure, the input capacitance is horizontally integrated in the lower ceramic substrate after being connected in series, the thermomechanical stress is reduced, the parasitic parameter is reduced, the reliability is improved, and meanwhile, the ceramic substrate can withstand severe working conditions such as vibration, impact and the like.

Inventors

YU LONGYANG
SUN XUEJING
ZHAO SHENGLEI
WANG ZHONGXU
YOU SHUZHEN
ZHANG JINCHENG
HAO YUE

Assignees

西安电子科技大学
陕西君普新航科技有限公司

Dates

Publication Date: 20260505
Application Date: 20260203

Claims (9)

1. The double-sided heat dissipation half-bridge power module based on the GaN device is characterized by comprising an upper ceramic substrate, a lower ceramic substrate, an upper tube GaN device, a lower tube GaN device and an input capacitor, wherein the lower ceramic substrate is arranged corresponding to the upper ceramic substrate, the upper tube GaN device and the lower tube GaN device are positioned between the upper ceramic substrate and the lower ceramic substrate, and the input capacitor is integrated in the lower ceramic substrate, and the upper tube GaN device, the lower tube GaN device and the input capacitor form a power loop; The lower ceramic substrate sequentially comprises a first metal layer, a first ceramic layer, a second metal layer, a second ceramic layer, a third metal layer, a third ceramic layer and a fourth metal layer from top to bottom, wherein the first metal layer is connected with the second metal layer, the second metal layer is connected with the third metal layer through a metal blind hole, and the upper tube GaN device and the lower tube GaN device are arranged above the first metal layer.
2. The GaN device-based double-sided radiating half-bridge power module of claim 1, wherein the upper tube GaN device comprises a first substrate, a first source electrode and a first drain electrode, the first substrate is positioned on one side of the upper tube GaN device, which is close to an upper ceramic substrate, the first source electrode and the first drain electrode are arranged in a plurality of comb teeth shape, the first source electrode and the first drain electrode are positioned on one side of the upper tube GaN device, which is close to the first metal layer, and the first substrate and the first source electrode are connected through a metal column; The down tube GaN device comprises a second substrate, a second source electrode and a second drain electrode, wherein the second substrate is positioned on one side, close to the upper ceramic substrate, of the down tube GaN device, a plurality of second source electrodes and a plurality of second drain electrodes are arranged, the number of the second source electrodes is the same as that of the first source electrodes and the second source electrodes, the second source electrodes and the second drain electrodes are arranged in a comb-tooth shape, the second source electrodes and the second drain electrodes are positioned on one side, close to the first metal layer, of the down tube GaN device, and the second substrate and the second source electrodes are connected through metal columns.
3. The GaN device-based double-sided heat dissipation half-bridge power module of claim 2, wherein said first source electrode and said second drain electrode are connected by a metallization on said first metal layer; The third ceramic layer is internally provided with a cavity, the cavity is positioned under the metal layer connecting the first source electrode and the second drain electrode, and the input capacitor is arranged in the cavity and is connected with the third metal layer.
4. The GaN device-based double-sided heat dissipation half-bridge power module as set forth in claim 3, wherein said metal blind holes between said first metal layer and said second metal layer are in communication with said metal blind holes directly between said second metal layer and said third metal layer, said first drain and said second source are connected to said third metal layer through said metal blind holes in communication, and said second metal layer serves as a heat dissipation layer.
5. The GaN device-based double-sided heat dissipation half-bridge power module of claim 4, wherein the first drain, the first source, the second drain, the second source and the input capacitor form a sub-loop, current sequentially flows through the first drain, the first source, the second drain, the second source and the input capacitor to the first drain to form a closed loop, two input capacitors are arranged, and the two input capacitors are connected in series.
6. The double-sided radiating half-bridge power module based on GaN device of claim 2, wherein the upper ceramic substrate is DBC ceramic substrate or DPC ceramic substrate.
7. The GaN device-based double-sided heat dissipation half-bridge power module of claim 6, wherein the metal layer of the upper ceramic substrate, the metal layer of the lower ceramic substrate, the metal posts and the metal blind holes are one or more of copper, nickel, gold, silver, chromium and titanium, and the ceramic layers of the upper ceramic substrate and the lower ceramic substrate are one or more of aluminum oxide, aluminum nitride, silicon carbide and zirconium oxide.
8. A method for preparing a GaN device-based double-sided heat dissipation half-bridge power module, for preparing the GaN device-based double-sided heat dissipation half-bridge power module of any one of claims 1-7, comprising the steps of: s1, preparing a lower ceramic substrate integrated with an input capacitor; S2, preparing an upper ceramic substrate; And S3, packaging the GaN device, the upper ceramic substrate and the lower ceramic substrate to realize electrical conduction.
9. The method for manufacturing a GaN device-based double-sided heat dissipation half-bridge power module of claim 8, wherein step S1 specifically comprises: s101, processing a cavity on a raw porcelain belt, wherein the size of the cavity is matched with the outline size of an input capacitor to be integrated, and coating metal conductive materials on the bottom and the periphery of the cavity to form an interconnection bonding pad; S102, integrating a packaging capacitor into a cavity by adopting a high-precision chip mounter, aligning pins of an element with the interconnection pads, and coating conductive adhesive on contact interfaces of the pins and the pads to realize temporary fixation and primary electrical interconnection of the element; s103, stacking the green ceramic tape integrated with the input capacitor and other layers of green ceramic tapes according to a design sequence, placing the stacked green body in an atmosphere sintering furnace, and performing low-temperature co-firing to obtain a third ceramic layer of the integrated packaging capacitor; s104, plating metal or cladding metal on the surface of the third ceramic layer to form a third metal layer and a fourth metal layer; S105, patterning the metal layers on two sides of the third ceramic layer, wherein the third metal layer reserves a positioning pad connected with the metal blind hole and a site for interconnection with the second ceramic layer, and the fourth metal layer etches a grounding pad, a heat dissipation area and an external circuit interconnection interface; S106, taking a second ceramic layer green ceramic tape with corresponding thickness, processing a through hole at a preset metal blind hole penetrating position, laminating the green ceramic tape on the surface of a third metal layer, compacting after aligning to a positioning reference, putting the third metal layer and the third metal layer into an atmosphere sintering furnace for secondary low-temperature co-sintering to enable the second ceramic layer to be tightly combined with the third metal layer, and simultaneously curing a conductive layer on the inner wall of the through hole; s107, plating metal or cladding metal on the upper surface of the second ceramic layer to form a second metal layer, etching a metal blind hole connecting pad and an interconnection area with the first ceramic layer through a photoetching process; s108, carrying out metallization filling on the reserved through holes of the second ceramic layer and the third ceramic layer, so that the filled copper is firmly and electrically connected with the connecting pads of the second metal layer and the third metal layer, and forming metal blind holes penetrating through the second ceramic layer and the third ceramic layer; S109, taking a first ceramic layer green ceramic tape, reserving an avoidance hole at the position corresponding to the top of the metal blind hole, coating insulating adhesive slurry on the lower surface of the green ceramic tape, laminating the green ceramic tape on the surfaces of the second metal layer and the metal blind hole, compacting, and then performing third low-temperature co-firing to enable the first ceramic layer to be closely attached to the second ceramic layer and the second metal layer, and simultaneously ensuring that the top of the metal blind hole is exposed out of the upper surface of the first ceramic layer; S100, plating metal or cladding metal on the upper surface of the first ceramic layer and the top of the metal blind hole to form a first metal layer; S111, polishing and cleaning the prepared lower ceramic substrate integrally to remove surface residual slurry, metal scraps and greasy dirt, inspecting internal cracks of the ceramic layer, peeling the metal layer and filling defects of the metal blind holes by adopting an ultrasonic detection technology, detecting the insulating property of each layer by adopting an insulating resistance tester, and verifying the heat conducting property of the substrate by adopting a heat conductivity tester.

Description

Double-sided heat dissipation half-bridge power module based on GaN device and preparation method Technical Field The invention relates to the technical field of power electronic power modules, in particular to a double-sided heat dissipation half-bridge power module based on a GaN device and a preparation method thereof. Background The third generation semiconductor GaN device is widely applied in the field of power converters due to the faster switching frequency, lower on-resistance and higher breakdown voltage. GaN die is a fragile device and must be designed at the module level by packaging, interconnection, heat dissipation, etc. to adapt to the complex requirements of industrial, automotive, energy, etc. scenarios. However, the GaN bare chip can suffer from several problems, such as damage of mechanical stress such as vibration and impact, and a large amount of heat can be generated during the operation of the device, especially the power density of the GaN bare chip is extremely high, and when the bare chip is directly exposed, the heat can only be naturally radiated through air, so that the thermal resistance is extremely high, the output power of the device can be hindered, the output current can be influenced, the GaN device can be burnt out due to overheating, the GaN device has extremely high switching speed and is extremely sensitive to parasitic parameters, and the parasitic parameters easily cause voltage overshoot, so that the device is damaged. Therefore, gaN die devices are often packaged for use as power modules. In the conventional package form, the substrate is mainly an FR-4 PCB substrate or a ceramic substrate. The ceramic substrate has good heat dissipation, but is not flexible and compact enough in layout, the interconnection parasitic parameter through the surface mount capacitor is large, in order to reduce the parasitic parameter, a researcher embeds the GaN bare chip device into the FR-4 PCB, but the GaN device generates great heat when in operation, and the thermal expansion coefficients of the GaN device material and the substrate are inconsistent, so that the GaN device material is deformed due to thermal mechanical stress and is difficult to dissipate heat. There are also studies on the use of flexible PCBs as substrates to reduce parasitic parameters and improve heat dissipation, but flexible PCBs are very flexible and unsuitable for applications in severe environments such as vibration, impact, etc. Disclosure of Invention The invention aims to provide a double-sided heat dissipation half-bridge power module based on a GaN device and a preparation method thereof, wherein the double-sided heat dissipation half-bridge power module is cooperatively optimized based on parasitic parameters, heat dissipation performance and mechanical strength. In order to achieve the above object, the present invention provides a double-sided heat dissipation half-bridge power module based on a GaN device, which comprises an upper ceramic substrate, a lower ceramic substrate disposed corresponding to the upper ceramic substrate, an upper tube GaN device and a lower tube GaN device disposed between the upper ceramic substrate and the lower ceramic substrate, and an input capacitor integrated in the lower ceramic substrate, wherein the upper tube GaN device, the lower tube GaN device and the input capacitor form a power loop; The lower ceramic substrate sequentially comprises a first metal layer, a first ceramic layer, a second metal layer, a second ceramic layer, a third metal layer, a third ceramic layer and a fourth metal layer from top to bottom, wherein the first metal layer is connected with the second metal layer, the second metal layer is connected with the third metal layer through a metal blind hole, and the upper tube GaN device and the lower tube GaN device are arranged above the first metal layer. Preferably, the upper tube GaN device comprises a first substrate, a first source electrode and a first drain electrode, wherein the first substrate is positioned at one side of the upper tube GaN device close to the upper ceramic substrate, a plurality of first source electrodes and a plurality of first drain electrodes are arranged in a comb-tooth shape, the first source electrodes and the first drain electrodes are positioned at one side of the upper tube GaN device close to the first metal layer, and the first substrate is connected with the first source electrodes through metal columns; The down tube GaN device comprises a second substrate, a second source electrode and a second drain electrode, wherein the second substrate is positioned on one side, close to the upper ceramic substrate, of the down tube GaN device, a plurality of second source electrodes and a plurality of second drain electrodes are arranged, the number of the second source electrodes is the same as that of the first source electrodes and the second source electrodes, the second source electrodes and the second drai