CN-121985823-A - Semiconductor structure with through silicon via and manufacturing method thereof

Abstract

The invention discloses a semiconductor structure with a through-silicon via and a manufacturing method thereof, wherein the semiconductor structure with the through-silicon via comprises a semiconductor substrate, the through-silicon via penetrates through the semiconductor substrate, the through-silicon via comprises a metal layer, a buffer layer and an insulating layer, one end of the metal layer protrudes out of a back surface of the semiconductor substrate, a groove is arranged on one side of the end and a composite structure fills the groove, wherein the composite structure comprises a heat conducting layer and a first dielectric layer, the heat conducting layer contacts with the side wall of the end of the metal layer, the buffer layer, the insulating layer and the semiconductor substrate, the first dielectric layer is arranged on the heat conducting layer, the upper surface of the first dielectric layer is aligned with the end of the metal layer, and the heat conducting layer comprises aluminum nitride, aluminum oxide or diamond.

Inventors

• YANG JINJIA
• LIN DAJUN
• CAI BIYU
• CAI BINXIANG
• LIN JUFU
• Lin Chuanlan

Assignees

• 联华电子股份有限公司

Dates

Publication Date

20260505

Application Date

20241115

Priority Date

20241030

Claims (20)

1. 1. A semiconductor structure having a through-silicon via, comprising: A semiconductor substrate; the silicon through hole penetrates through the semiconductor substrate, wherein the silicon through hole comprises a metal layer, a buffer layer and an insulating layer, and the tail end of the metal layer protrudes out of the back surface of the semiconductor substrate; a groove provided at one side of the end, and And a composite structure filling the recess, wherein the composite structure comprises a thermally conductive layer contacting the sidewall of the end and contacting the buffer layer, the insulating layer and the semiconductor substrate, and a first dielectric layer disposed on the thermally conductive layer, and an upper surface of the first dielectric layer is level with the end, the thermally conductive layer comprising aluminum nitride, aluminum oxide or diamond.
2. 2. The semiconductor structure with through-silicon-vias of claim 1, further comprising: a second dielectric layer covering the composite structure and the through-silicon-via, and And a conductive line buried in the second dielectric layer, wherein the conductive line contacts the end of the metal layer, the thermally conductive layer and the first dielectric layer.
3. 3. The through-silicon-via semiconductor structure of claim 2, wherein the second dielectric layer comprises silicon nitride, silicon oxide, silicon oxynitride, silicon carbide nitride, or a polymer.
4. 4. The through-silicon-oxide-nitride-semiconductor structure of claim 1, wherein said first dielectric layer comprises silicon nitride, silicon oxide, silicon oxynitride or silicon carbide nitride.
5. 5. The semiconductor structure with through-silicon-vias of claim 1, wherein an end of said buffer layer, an end of said insulating layer and said back surface of said semiconductor substrate are cut.
6. 6. The through-silicon-via semiconductor structure of claim 1, wherein the metal layer comprises copper, aluminum, titanium, tungsten, or gold, the buffer layer comprises tantalum, tantalum nitride, titanium, or titanium nitride, and the insulating layer comprises silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide nitride.
7. 7. A semiconductor structure having a through-silicon via, comprising: A semiconductor substrate; a through silicon via penetrating the semiconductor substrate, wherein the through silicon via comprises a metal layer, a buffer layer and an insulating layer, and the tail end of the metal layer protrudes out of the back surface of the semiconductor substrate; a groove provided at one side of the end, and And a composite structure filling the recess, wherein the composite structure comprises a thermally conductive layer and a first dielectric layer, the thermally conductive layer contacts the sidewall of the end and contacts the buffer layer, the insulating layer and the semiconductor substrate, the first dielectric layer is disposed on the thermally conductive layer, the upper surface of the first dielectric layer is aligned with the end, the thermally conductive layer has a thermal conductivity between 5 and 350W/m.k, and the first dielectric layer has a dielectric constant less than 8.
8. 8. The semiconductor structure with through-silicon-vias of claim 7, further comprising: a second dielectric layer covering the composite structure and the through-silicon-via, and And a conductive line buried in the second dielectric layer, wherein the conductive line contacts the end of the metal layer, the thermally conductive layer and the first dielectric layer.
9. 9. The through-silicon-via semiconductor structure of claim 8, wherein the second dielectric layer comprises silicon nitride, silicon oxide, silicon oxynitride, silicon carbide nitride, or a polymer.
10. 10. The semiconductor structure with through-silicon via of claim 7, wherein the first dielectric layer comprises silicon nitride, silicon oxide, silicon oxynitride or silicon carbide nitride.
11. 11. The semiconductor structure with through-silicon-vias of claim 7, wherein an end of said buffer layer, an end of said insulating layer and said back surface of said semiconductor substrate are cut.
12. 12. The semiconductor structure of claim 7, wherein said thermally conductive layer has a thermal conductivity between 200 and 350W/m-k and said first dielectric layer has a dielectric constant less than 4.
13. 13. The semiconductor structure of claim 7, wherein the metal layer comprises copper, aluminum, titanium, tungsten, or gold, the buffer layer comprises tantalum, tantalum nitride, titanium, or titanium nitride, and the insulating layer comprises silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide nitride.
14. 14. A method for fabricating a semiconductor structure having through-silicon vias, comprising: providing a semiconductor substrate, wherein the semiconductor substrate comprises a front surface and a back surface; Forming a through silicon via embedded in the semiconductor substrate from the front surface, the through silicon via comprising a metal layer, a buffer layer and an insulating layer; Thinning the back surface of the semiconductor substrate to expose a portion of the through silicon via; Removing the insulating layer and the buffer layer in the exposed through-silicon-via and leaving the end of the metal layer protruding from the back surface of the semiconductor substrate with a recess provided on one side of the end, and A thermally conductive layer and a first dielectric layer are sequentially formed to cover the recess, wherein the thermally conductive layer contacts the sidewalls of the terminal and contacts the buffer layer, the insulating layer and the semiconductor substrate, the first dielectric layer is disposed on the thermally conductive layer, and an upper surface of the first dielectric layer is aligned with the terminal, the thermally conductive layer comprises aluminum nitride, aluminum oxide or diamond.
15. 15. The method of fabricating a semiconductor structure with through-silicon vias as recited in claim 14, further comprising: forming a second dielectric layer covering the first dielectric layer, the heat conduction layer and the through-silicon via, and A conductive line is formed to be embedded in the second dielectric layer, wherein the conductive line contacts the end of the metal layer, the thermally conductive layer and the first dielectric layer.
16. 16. The method of claim 15, wherein the second dielectric layer comprises silicon nitride, silicon oxide, silicon oxynitride, silicon carbide nitride, or a polymer.
17. 17. The method of claim 14, wherein the first dielectric layer comprises silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide nitride.
18. 18. The method of claim 14, wherein the metal layer comprises copper, aluminum, titanium, tungsten, or gold, the buffer layer comprises tantalum, tantalum nitride, titanium, or titanium nitride, and the insulating layer comprises silicon nitride, silicon oxide, silicon oxynitride, or silicon carbide nitride.
19. 19. The method of claim 14, wherein the thermal conductivity of the thermally conductive layer is between 5 and 350W/m-k, and the dielectric constant of the first dielectric layer is less than 8.
20. 20. The method of claim 14, wherein the thermal conductivity of the thermally conductive layer is between 200 and 350W/m-k, and the dielectric constant of the first dielectric layer is less than 4.

Description

Semiconductor structure with through silicon via and manufacturing method thereof Technical Field The present invention relates to a semiconductor structure with through silicon via and a method for fabricating the same, and more particularly, to a semiconductor structure with through silicon via and a method for fabricating the same with increased heat dissipation. Background It has been an important goal of the electronics industry to manufacture more reliable, lightweight, compact, fast, versatile, and efficient low cost semiconductor products. With the development of high-integration semiconductor products, the number of input/output pins has been significantly increased, and a technique of connecting semiconductor chips by using through-silicon vias having a small pitch has been widely developed, and in such a package structure, connection between chips is achieved by the through-silicon vias. The advantage of using through-silicon-via packaging is that the area of the semiconductor can be changed from two dimensions to three dimensions and the area of the semiconductor can be greatly saved. However, as the number of chip stacks increases, the density of metal lines increases, and thus, the phenomenon of heat accumulation increases due to the galvanic thermal effect. Disclosure of Invention In view of the above, the present invention provides a through-silicon-via heat dissipation structure capable of conducting heat from the through-silicon via to a semiconductor substrate or a lead or bump on a package. According to a preferred embodiment of the present invention, a semiconductor structure having through-silicon vias comprises a semiconductor substrate, a through-silicon via penetrating the semiconductor substrate, the through-silicon via comprising a metal layer, a buffer layer and an insulating layer, an end of the metal layer protruding from a back surface of the semiconductor substrate, a recess disposed on one side of the end and a composite structure filling the recess, wherein the composite structure comprises a thermally conductive layer and a first dielectric layer, the thermally conductive layer contacting a sidewall of the end of the metal layer and contacting the buffer layer, the insulating layer and the semiconductor substrate, the first dielectric layer disposed on the thermally conductive layer, and an upper surface of the first dielectric layer being level with the end, the thermally conductive layer comprising aluminum nitride, aluminum oxide or diamond. According to another preferred embodiment of the present invention, a semiconductor structure having a through-silicon via includes a semiconductor substrate, a through-silicon via penetrating the semiconductor substrate, wherein the through-silicon via includes a metal layer, a buffer layer and an insulating layer, an end of the metal layer protrudes from a back surface of the semiconductor substrate, a recess is disposed at one side of the end and a composite structure fills the recess, wherein the composite structure includes a thermally conductive layer and a first dielectric layer, the thermally conductive layer contacts a sidewall of the end and contacts the buffer layer, the insulating layer and the semiconductor substrate, the first dielectric layer is disposed on the thermally conductive layer, and an upper surface of the first dielectric layer is aligned with the end of the metal layer, a thermal conductivity of the thermally conductive layer is between 5 and 350W/m·k, and a dielectric constant of the first dielectric layer is less than 8. According to another preferred embodiment of the present invention, a method for fabricating a semiconductor structure having through-silicon-vias includes providing a semiconductor substrate including a front surface and a back surface, then forming a through-silicon-via embedded in the semiconductor substrate from the front surface, the through-silicon-via including a metal layer, a buffer layer and an insulating layer, then thinning the back surface of the semiconductor substrate, exposing a portion of the through-silicon-via, then removing the insulating layer and the buffer layer in the exposed through-silicon-via and leaving an end of the metal layer protruding from the back surface of the semiconductor substrate, a recess disposed on one side of the end of the metal layer, and finally sequentially forming a thermally conductive layer and a first dielectric layer covering the recess, wherein the thermally conductive layer contacts a sidewall of the end of the metal layer and contacts the buffer layer, the insulating layer and the semiconductor substrate, the first dielectric layer is disposed on the thermally conductive layer, and an upper surface of the first dielectric layer is aligned with the end of the metal layer, the thermally conductive layer includes aluminum nitride, aluminum oxide or diamond. In order to make the above objects, features and advantages of the present inve