CN-121985832-A - Semiconductor device and method of forming power IC into PMIC having magnetic core

Abstract

A semiconductor device has a first substrate and a first electrical component disposed over a first surface of the first substrate. The second electrical component is disposed over a second surface of the first substrate opposite the first surface of the first substrate. The second electrical component exhibits magnetic attraction from the magnetic material or the magnetic coil. The first substrate has an opening and the second electrical component has one or more feet extending through the opening in the first substrate. The third electrical component is disposed over the second substrate and the second substrate is disposed over the first substrate. The conductive post connects the first substrate and the second substrate. An encapsulant may be deposited around the first electrical component and a shielding layer disposed over the second electrical component. The second electrical component may provide a power management function.

Inventors

• LI XIUBIN
• SONG ZHINA
• CUI RONGREN
• LV ZHENGXIAN

Assignees

• 星科金朋管理私人有限公司

Dates

Publication Date

20260505

Application Date

20251013

Priority Date

20241030

Claims (15)

1. 1. A semiconductor device, comprising: a first substrate; A first electrical component disposed over the first surface of the first substrate, and A second electrical component disposed over a second surface of the first substrate opposite the first surface of the first substrate, wherein the second electrical component exhibits magnetic attraction.
2. 2. The semiconductor device of claim 1, wherein the first substrate comprises an opening and the second electrical component comprises a pin extending through the opening in the first substrate.
3. 3. The semiconductor device of claim 1, wherein the second electrical component comprises a magnetic material.
4. 4. The semiconductor device of claim 1, wherein the second electrical component comprises a magnetic coil.
5. 5. The semiconductor device of claim 1, further comprising: A second substrate, and A third electrical component disposed over the second substrate and the second substrate is disposed over the first substrate.
6. 6. A semiconductor device, comprising: a first substrate; A first electrical component disposed over the first surface of the first substrate, and A second electrical component magnetically attracted to a second surface of the first substrate opposite the first surface of the first substrate.
7. 7. The semiconductor device of claim 6, wherein the first substrate comprises an opening and the second electrical component comprises a pin extending through the opening in the first substrate.
8. 8. The semiconductor device of claim 6, wherein the second electrical component comprises a magnetic material.
9. 9. The semiconductor device of claim 6, wherein the second electrical component comprises a magnetic coil.
10. 10. The semiconductor device of claim 6, further comprising a shielding layer disposed over the second electrical component.
11. 11. A method of manufacturing a semiconductor device, comprising: Providing a first substrate; disposing a first electrical component over the first surface of the first substrate, and The second electrical component is disposed so as to be magnetically attracted to a second surface of the first substrate opposite the first surface of the first substrate.
12. 12. The method of claim 11, further comprising: providing an opening in a first substrate, and A foot is provided that extends from the second electrical component and is disposed within the opening in the first substrate.
13. 13. The method of claim 11, wherein the second electrical component comprises a magnetic material.
14. 14. The method of claim 11, wherein the second electrical component comprises a magnetic coil.
15. 15. The method of claim 11, further comprising: Providing a second substrate; Disposing a third electrical component over the second substrate, and The second substrate is disposed over the first substrate.

Description

Semiconductor device and method of forming power IC into PMIC having magnetic core Technical Field The present invention relates generally to semiconductor devices and, more particularly, to semiconductor devices and methods of forming power Integrated Circuits (ICs) implemented as Power Management Integrated Circuits (PMICs) having a magnetic core. Background Semiconductor devices are common in modern electronic products. Semiconductor devices perform a wide range of functions such as signal processing, high-speed computing, transmitting and receiving electromagnetic signals, controlling electronics, optoelectronics, and creating visual images for television displays. Semiconductor devices exist in the fields of communications, power conversion, networking, computers, entertainment and consumer products. Semiconductor devices are also found in military applications, aviation, automotive, industrial controllers and office equipment. Semiconductor devices, particularly in high frequency applications such as Radio Frequency (RF) wireless communications, typically contain one or more Integrated Passive Devices (IPDs) to perform the necessary electrical functions. Multiple semiconductor dies and IPDs can be integrated into a SiP module to achieve higher density and expanded electrical functionality in a small space. Within the SIP module, the semiconductor die and IPD are disposed on a substrate for structural support and electrical interconnection. An encapsulant is deposited over the semiconductor die, IPD, and substrate. The SIP module includes high-speed digital and RF electrical components that are highly integrated to achieve small size and low height and operate at high clock frequencies and high power ratings. A thermal spreader (HEAT SPREADER) with thermal interface material is typically disposed over the SIP module to dissipate excess heat from the various power devices. Drawings 1A-1c illustrate a semiconductor wafer having a plurality of semiconductor die separated by saw lanes; FIGS. 2a-2w illustrate a process of forming a power IC into a PMIC with a magnetic core; FIGS. 3a-3h illustrate a process of forming another part of a PMIC; FIGS. 4a-4b illustrate PMICs formed as wafers and singulated into individual packages; FIGS. 5a-5b illustrate cross-sectional views of a PMIC, and Fig. 6 illustrates a Printed Circuit Board (PCB) in which different types of packages are disposed on a surface of the PCB. Detailed Description The present invention is described in one or more embodiments in the following description with reference to the figures, in which like numbers represent the same or similar elements. While this invention has been described in terms of the best mode for achieving the invention's objectives, it will be appreciated by those skilled in the art that it is intended to cover alternatives, modifications, and equivalents as may be included within the spirit and scope of the invention as defined by the appended claims and their equivalents as supported by the following disclosure and drawings. The term "semiconductor die" as used herein refers to both singular and plural forms of the word, and thus may refer to both a single semiconductor device and a plurality of semiconductor devices. Semiconductor devices are typically manufactured using two complex manufacturing processes, front-end fabrication and back-end fabrication. Front end fabrication involves forming a plurality of dies on the surface of a semiconductor wafer. Each die on the wafer contains active and passive electrical components that are electrically connected to form a functional circuit. Active electrical components such as transistors and diodes have the ability to control the flow of current. Passive electrical components such as capacitors, inductors, and resistors create a relationship between voltage and current that is necessary to perform circuit functions. Back-end fabrication refers to dicing or singulating the completed wafer into individual semiconductor die and packaging the semiconductor die for structural support, electrical interconnect, and environmental isolation. To singulate the semiconductor die, the wafer is scored and broken along nonfunctional areas of the wafer (known as saw streets or scribe lines). The wafers are singulated using a laser cutting tool or saw blade. After singulation, the individual semiconductor die are disposed on a package substrate that includes pins or contact pads for interconnection with other system components. The contact pads formed over the semiconductor die are then connected to contact pads within the package. The electrical connection may be achieved with conductive layers, bumps, stud bumps, conductive paste or bond wires. An encapsulant or other molding material is deposited over the package to provide physical support and electrical isolation. The completed package is then inserted into an electrical system and the functionality of the semiconductor device is made availa