CN-121985836-A - Vertical power device packaged by metal base circuit board

CN121985836ACN 121985836 ACN121985836 ACN 121985836ACN-121985836-A

Abstract

The vertical power device packaged by the metal base circuit board comprises a vertical diode or field effect transistor wafer, and further comprises a metal base plate, wherein a boss is arranged on the top surface of the metal base plate, the top surface of the boss is aligned with the top surface of the wafer, an insulating plate layer is arranged in the insulating plate layer, holes which are matched with the boss on the metal base plate and used for accommodating the wafer are formed in the insulating plate layer, the insulating plate layer is adhered to the metal base plate, the boss of the metal base plate penetrates out of the holes which are matched with the boss on the metal base plate in the insulating plate layer, the top surface of the boss is aligned with the top surface of the insulating plate, the wafer is welded on the top surface of the metal base plate through a bottom surface bonding pad and is placed in the holes which are used for accommodating the wafer in the insulating plate layer, and insulating sizing materials are filled in gaps at edges of the holes which are used for accommodating the wafer and filled around the wafer. By optimizing the thermoelectric separation circuit board process and combining the chip wafer level packaging method, the packaging of the vertical power device with high cost performance is realized.

Inventors

ZHAO ZHENTAO

Assignees

摩驱科技(深圳)有限公司

Dates

Publication Date: 20260505
Application Date: 20251107

Claims (4)

1. A vertical power device packaged by a metal substrate circuit board is characterized by comprising a vertical diode or field effect transistor wafer, wherein bonding pads are arranged on the bottom surface of the wafer, the top surface of the wafer is provided with bonding pads, the vertical power device further comprises a metal substrate, a boss is arranged on the top surface of the metal substrate, the top surface of the boss is aligned with the top surface of the wafer, the top surface of the boss is plated with a circuit board surface mounting technology and is easy to weld with a metal layer, the vertical power device further comprises an insulating board layer, holes which are matched with the boss on the metal substrate are formed in the insulating board layer, holes which are used for accommodating the wafer are formed in the insulating board layer, the thickness of the insulating board layer is equal to that of the wafer, the insulating board layer is bonded and laminated on the metal substrate, the boss of the metal substrate penetrates out of the holes which are matched with the boss on the metal substrate in the insulating board, the top surface of the boss is aligned with the top surface of the insulating board, the vertical diode or the field effect transistor wafer is welded on the top surface of the metal substrate through the bottom surface bonding pads, the insulating board is positioned in the holes which are used for accommodating the wafer, the top surface of the wafer is aligned with the boss top surface of the metal substrate, the insulating board is filled with the insulating board, the insulating board is filled with holes which are filled in the wafer and filled with the gaps, and the edges of the wafer are filled in the holes, and the periphery of the wafer.
2. The vertical power device of claim 1, wherein the vertical diode or field effect transistor wafer is a group of two or more diodes or field effect transistor wafers, the group of diodes or field effect transistor wafers are respectively welded on the top surface of the metal substrate through bottom surface bonding pads, and are placed in holes of the insulating plate layer for accommodating the wafers, and the top surface of the wafers is aligned with the top surface of the boss of the metal substrate.
3. The vertical power device of claim 1, wherein the bottom surface of the metal substrate is further bonded with a bottom insulating layer, and the bottom surface of the metal substrate is covered with the bottom insulating layer.
4. The vertical power device of claim 1, wherein the vertical diode wafer is soldered to the top surface of the metal substrate via an anode pad, residing in a hole in the insulating board layer that receives the wafer.

Description

Vertical power device packaged by metal base circuit board Technical Field The invention relates to a packaging technology for a vertical power device, a chip heat dissipation technology optimization and a packaging architecture design, a packaging technology for a diode and a field effect transistor (MOSFET), and a metal processing technology. Background Semiconductor power devices (such as diodes, MOSFETs, HEMTs, and IGBTs) are widely used in high power electronic devices, such as power management modules, electric vehicle drive systems, and industrial motor control. The core of which is unidirectional conductivity, current can only flow from the anode to the cathode. A rectifier bridge, consisting of diodes, is the basic element for converting Alternating Current (AC) into Direct Current (DC). The third generation semiconductor materials GaN (gallium nitride) and SiC (silicon carbide) are representatives of wide forbidden band semiconductors, and power devices such as diodes manufactured by the SiC (silicon carbide) have the remarkable characteristics of high switching speed, small chip area and the like, and are widely applied to the fields of power adapters, industrial power supplies, automobile electronics and the like. The ultra-wide band gap power devices of the fourth generation semiconductor materials mainly represented by diamond, gallium oxide and the like are put into practical application, and the power devices manufactured by the ultra-wide band gap power devices can also work at higher temperature. The thermoelectric separation of the metal-based circuit board is a technology for independently designing a circuit signal transmission path and a heat dissipation conduction path, double optimization of electrical performance and heat dissipation performance is realized through a layered structure, the technology is currently applied to the circuit board of a high-power electronic product, and high-efficiency heat dissipation is realized by adopting a copper substrate. Conventional power device packages typically employ complex lead frame and metal clip structures. However, this packaging method has problems of complicated process, additional metal clip and soldering steps, increased manufacturing cost and time, large volume, limited overcurrent and heat dissipation performance, and high thermal resistance of the conventional package. Disclosure of Invention In order to solve the problems, the invention provides a vertical power device packaged by a metal base circuit board, which simplifies the packaging process, improves the heat dissipation performance, can realize parallel use of a plurality of vertical diodes or field effect transistor wafers, and improves the current carrying capacity, thereby improving the efficiency. The vertical power device comprises a vertical diode or a field effect transistor wafer, wherein a bonding pad is arranged on the bottom surface of the wafer, the bonding pad is also arranged on the top surface of the wafer, the vertical power device further comprises a metal substrate, a boss is arranged on the top surface of the metal substrate, the boss can be prepared by adopting a CNC process or an etching process, the top surface of the boss is aligned with the top surface of the wafer, the top surface of the boss is plated with a circuit board surface mounting process and is easy to weld a metal layer, a nickel gold or nickel palladium gold plating layer can be adopted, the vertical power device further comprises an insulation board layer, holes which are matched with the boss on the metal substrate are arranged in the insulation board layer, holes which are used for accommodating the wafers are formed in the insulation board, the thickness of the insulation board is equal to that of the wafers, the insulation board can be made of glass fiber board (FR 4 board), the insulation board is bonded and laminated on the metal substrate, the boss of the metal substrate is matched with the holes of the metal substrate, the top surface of the boss is aligned with the top surface of the wafer, the vertical diode or the field effect transistor wafer is welded on the top surface of the metal substrate, the top surface of the insulation board is positioned on the top surface of the metal substrate, the holes of the insulation board are filled with the holes of the Polyimide, the hole is filled with the Polyimide, and the insulation board is filled with the Polyimide, the insulation board is filled with the insulation material is filled with the Polyimide, and the insulation material is filled with the Polyimide, the insulation material and the Polyimide, the Polyimide and the Polyimide. Preferably, the vertical diode or field effect transistor wafer is a group of two or more diode or field effect transistor wafers, the group of diode or field effect transistor wafers are welded on the top surface of the metal substrate through bottom surface bonding pads respectively, the group of