CN-121985845-A - Semiconductor device with bonding structure and forming method thereof

Abstract

A semiconductor device having a bonding structure and a method of forming the same. The present disclosure relates to methods, apparatus, systems, and techniques for managing bond structures in semiconductor devices. An example semiconductor device includes a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction. The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure. The bonding structure includes a first set of contact structures, a second set of contact structures, and a dielectric material surrounding the first set of contact structures and the second set of contact structures. A first contact structure of the first set of contact structures is adjacent to a second contact structure of the second set of contact structures along a second direction perpendicular to the first direction. The first contact structure includes a first conductive material. The second contact structure includes the first conductive material and an oxide.

Inventors

• LIN LIN
• WANG CHAO
• TIAN FENG

Assignees

• 长江存储科技有限责任公司

Dates

Publication Date

20260505

Application Date

20241031

Claims (20)

1. 1. A semiconductor device, comprising: a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction, wherein: the first semiconductor structure is bonded to the second semiconductor structure through the bonding structure; the bonding structure includes a first set of contact structures, a second set of contact structures, and a dielectric material surrounding the first set of contact structures and the second set of contact structures; a first contact structure of the first set of contact structures is adjacent to a second contact structure of the second set of contact structures along a second direction perpendicular to the first direction; The first contact structure includes a first conductive material, and The second contact structure includes the first conductive material and an oxide.
2. 2. The semiconductor device according to claim 1, wherein the first conductive material is a first metal, the oxide is a metal oxide, the metal oxide is a chemical compound of oxygen and an element from a second conductive material, and the second conductive material is a second metal.
3. 3. The semiconductor device of claim 1 or claim 2, wherein the first contact structure comprises a first portion comprising the first conductive material, a second portion comprising the first conductive material, and a third portion comprising the first conductive material, the third portion being located between the first portion and the second portion along the first direction, and the first conductive material in the third portion being resolidified.
4. 4. A semiconductor device according to any of claims 1 to 3, wherein the bonding structure comprises a first dielectric layer in contact with the first semiconductor structure and a second dielectric layer in contact with the second semiconductor structure, the first and second sets of contact structures extending into the first and second dielectric layers in the first direction, and a first dielectric material of the first dielectric layer being bonded to a second dielectric material of the second dielectric layer.
5. 5. The semiconductor device of any one of claims 1-4, wherein the first semiconductor structure comprises a first interconnect layer and the second semiconductor structure comprises a second interconnect layer, the first interconnect layer coupled to the second interconnect layer through the first set of contact structures.
6. 6. The semiconductor device of any one of claims 1-5, wherein the first semiconductor structure comprises an array of memory cells, the second semiconductor structure comprises peripheral circuitry configured to control the array of memory cells, and the array of memory cells is coupled to the peripheral circuitry through the first set of contact structures.
7. 7. The semiconductor device of any one of claims 1-6, wherein the first semiconductor structure comprises a first array of Dynamic Random Access Memory (DRAM) cells, the second semiconductor structure comprises a second array of DRAM cells, and at least one of the first array or the second array is coupled to the first set of contact structures.
8. 8. A semiconductor device, comprising: a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction, wherein: the first semiconductor structure is bonded to the second semiconductor structure through the bonding structure; The bonding structure includes a contact structure and a dielectric material isolating the contact structures from each other, and A first one of the contact structures is electrically conductive and includes a first portion including an electrically conductive material, a second portion including the electrically conductive material, and a third portion located between the first portion and the second portion along the first direction and including the electrically conductive material and an oxide.
9. 9. The semiconductor device of claim 8, wherein the conductive material is a first metal, the oxide is a metal oxide, and the metal oxide is a chemical compound of oxygen and an element from a second metal.
10. 10. The semiconductor device of claim 8 or claim 9, wherein the bonding structure comprises a first dielectric layer in contact with the first semiconductor structure and a second dielectric layer in contact with the second semiconductor structure, the contact structure extending into the first and second dielectric layers along the first direction, and a first dielectric material of the first dielectric layer being bonded to a second dielectric material of the second dielectric layer.
11. 11. The semiconductor device of any of claims 8-10, wherein the first semiconductor structure comprises a first interconnect layer, the second semiconductor structure comprises a second interconnect layer, and the first interconnect layer is coupled to the second interconnect layer through the contact structure.
12. 12. The semiconductor device of any one of claims 8 to 11, wherein the first semiconductor structure comprises an array of memory cells, the second semiconductor structure comprises peripheral circuitry configured to control the array of memory cells, and the array of memory cells is coupled to the peripheral circuitry through the contact structure.
13. 13. The semiconductor device of any one of claims 8-12, wherein the first semiconductor structure comprises a first array of Dynamic Random Access Memory (DRAM) cells, the second semiconductor structure comprises a second array of DRAM cells, and at least one of the first array or the second array is coupled to the contact structure.
14. 14. The semiconductor device of any one of claims 8 to 13, wherein the semiconductor device comprises two side regions and a central region between the two side regions along a second direction perpendicular to the first direction, and the contact structure is within the central region.
15. 15. A method, comprising: Forming a first semiconductor structure; Forming a second semiconductor structure, and Forming a bonding structure located between the first semiconductor structure and the second semiconductor structure along a first direction to bond the first semiconductor structure to the second semiconductor structure, wherein forming the bonding structure comprises: Forming a first set of contact structures and a second set of contact structures of the bonding structure, wherein: a dielectric material of the bonding structure surrounding the first set of contact structures and the second set of contact structures; a first contact structure of the first set of contact structures is adjacent to a second contact structure of the second set of contact structures along a second direction perpendicular to the first direction; The first contact structure includes a first conductive material, and The second contact structure includes the first conductive material and a first oxide.
16. 16. The method of claim 15, wherein forming the first set of contact structures and the second set of contact structures of the bonding structure comprises: Forming a first bonding layer on a side of the first semiconductor structure, wherein the first bonding layer comprises the dielectric material, a first set of conductive pads and a first set of thermite structures, and the first set of conductive pads are coupled to a first interconnect layer of the first semiconductor structure, and A second bonding layer is formed on a side of the second semiconductor structure, wherein the second bonding layer includes the dielectric material, a second set of conductive pads coupled to a second interconnect layer of the second semiconductor structure, and a second set of thermite structures, the first set of conductive pads being associated with the second set of conductive pads along the first direction, and the first set of thermite structures being associated with the second set of thermite structures along the first direction.
17. 17. The method of claim 16, wherein a first conductive pad of the first set of conductive pads is adjacent to a first thermite structure of the first set of thermite structures, the first conductive pad comprises the first conductive material, the first conductive pad and the first thermite structure are separated by the dielectric material, a second conductive pad of the second set of conductive pads is adjacent to a second thermite structure of the second set of thermite structures, the second conductive pad comprises the first conductive material, and the second conductive pad and the second thermite structure are separated by the dielectric material.
18. 18. The method of claim 17, wherein the first thermite structure comprises a second conductive material comprising a second oxide, the first conductive material comprising a first metal, the second conductive material comprising a second metal, the second oxide comprising a chemical compound of oxygen and an element from the first metal.
19. 19. The method of claim 18, wherein both the first and second thermite structures comprise multiple layers of the second metal and the second oxide alternating with each other along the first direction.
20. 20. The method of any of claims 17 to 19, further comprising: Aligning the first semiconductor structure with the second semiconductor structure, wherein the first conductive pad is aligned with the second conductive pad along the first direction and the first thermite structure is aligned with the second thermite structure along the first direction; Stacking the first semiconductor structure on the second semiconductor structure such that the first set of conductive pads is in contact with the second set of conductive pads and the first set of thermite structures is in contact with the second set of thermite structures, and Triggering a chemical reaction between the first set of thermite structures and the second set of thermite structures, wherein heat generated by the chemical reaction melts a side of the first conductive pad and a side of the second conductive pad and bonds the first conductive pad to the second conductive pad, the first contact structure is formed by the first conductive pad and the second conductive pad, and the second contact structure is formed by the chemical reaction between the first thermite structure and the second thermite structure.

Description

Semiconductor device with bonding structure and forming method thereof Technical Field The present disclosure relates to semiconductor devices and methods of manufacturing the same. Background Semiconductor devices (e.g., memory devices) may have various structures to increase the density of memory cells and lines on a chip. For example, three-dimensional (3D) memory devices are attractive due to their ability to increase array density by stacking more layers within a similar footprint. A 3D memory device typically includes a memory array of memory cells and peripheral circuitry for facilitating operation of the memory array. Disclosure of Invention The present disclosure describes methods, apparatus, systems, and techniques for managing bonding structures in semiconductor devices. One aspect of the disclosure features a semiconductor device. The semiconductor device includes a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction. The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure. The bonding structure includes a first set of contact structures, a second set of contact structures, and a dielectric material surrounding the first set of contact structures and the second set of contact structures. A first contact structure of the first set of contact structures is adjacent to a second contact structure of the second set of contact structures along a second direction perpendicular to the first direction. The first contact structure includes a first conductive material. The second contact structure includes the first conductive material and an oxide. In some embodiments, the first conductive material is a first metal, the oxide is a metal oxide, the metal oxide is a chemical compound of oxygen and an element from a second conductive material, and the second conductive material is a second metal. In some embodiments, the first contact structure includes a first portion including the first conductive material, a second portion including the first conductive material, and a third portion including the first conductive material. The third portion is located between the first portion and the second portion along the first direction. The first conductive material in the third portion is resolidified. In some embodiments, the bonding structure includes a first dielectric layer in contact with the first semiconductor structure and a second dielectric layer in contact with the second semiconductor structure. The first set of contact structures and the second set of contact structures extend into the first dielectric layer and the second dielectric layer along the first direction. The first dielectric material of the first dielectric layer is bonded to the second dielectric material of the second dielectric layer. In some embodiments, the first semiconductor structure includes a first interconnect layer and the second semiconductor structure includes a second interconnect layer, the first interconnect layer coupled to the second interconnect layer through the first set of contact structures. In some embodiments, the first semiconductor structure includes an array of memory cells and the second semiconductor structure includes peripheral circuitry configured to control the array of memory cells. The array of memory cells is coupled to the peripheral circuitry through the first set of contact structures. In some implementations, the first semiconductor structure includes a first array of Dynamic Random Access Memory (DRAM) cells, the second semiconductor structure includes a second array of DRAM cells, and at least one of the first array or the second array is coupled to the first set of contact structures. Another aspect of the disclosure features a semiconductor device. The semiconductor device includes a first semiconductor structure, a bonding structure, and a second semiconductor structure stacked along a first direction. The first semiconductor structure is bonded to the second semiconductor structure through the bonding structure. The bonding structure includes a contact structure and a dielectric material isolating the contact structures from each other. A first one of the contact structures is electrically conductive and includes a first portion including an electrically conductive material, a second portion including the electrically conductive material, and a third portion located between the first portion and the second portion along the first direction and including the electrically conductive material and an oxide. In some embodiments, the conductive material is a first metal, the oxide is a metal oxide, and the metal oxide is a chemical compound of oxygen and an element from a second metal. In some embodiments, the bonding structure includes a first dielectric layer in contact with the first semiconductor structure and a second dielectric layer in contact with the second semiconduc