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CN-121985850-A - Bonding device and bonding method implemented by the bonding device

CN121985850ACN 121985850 ACN121985850 ACN 121985850ACN-121985850-A

Abstract

The application provides a bonding apparatus and a bonding method. The bonding apparatus includes a substrate carrier, a laser source for emitting a laser beam toward the substrate carrier, a pressing tool movably disposed between the laser source and the substrate carrier and configured to pick up a semiconductor die having a target bonding area and press the semiconductor die against the substrate, wherein the pressing tool is permeable to the laser beam, and a beam shaping element disposed between the pressing tool and the laser source and configured to switchably shape the laser beam between a pre-heating state and a bonding state, wherein in the bonding state the laser beam covers at least the entire target bonding area and in the pre-heating state the laser beam covers a portion of the target bonding area.

Inventors

  • Min Jiongshuo

Assignees

  • 星科金朋管理私人有限公司

Dates

Publication Date
20260505
Application Date
20241029

Claims (13)

  1. 1. A bonding apparatus, comprising: a substrate carrier for placing a substrate; a laser source for emitting a laser beam towards the substrate carrier; A pressing tool movably placed between the laser source and the substrate carrier and configured for picking up a semiconductor die having a target bonding area and pressing the semiconductor die against the substrate, wherein the pressing tool is permeable to the laser beam such that the laser beam passes through the pressing tool to the semiconductor die when the semiconductor die is pressed against the substrate, and A beam shaping element disposed between the pressurizing tool and the laser source and configured to switchably shape the laser beam between a pre-heating state and a bonding state, wherein in the bonding state the laser beam covers at least the entire target bonding region and in the pre-heating state the laser beam covers a portion of the target bonding region to pre-heat the semiconductor die.
  2. 2. The bonding apparatus according to claim 1, wherein the beam shaping element comprises: A beam shaping head having an opening at the center, and A baffle mounted to the beam shaping head and defining an aperture aligned with the opening of the beam shaping head, wherein the baffle is horizontally movable relative to the beam shaping head to vary the size of the aperture, wherein The aperture having a reduced size that allows the laser beam to cover a portion of the target bonding region when the beam shaping element shapes the laser beam in the pre-heated state, and When the beam shaping element shapes the laser beam in the bonding state, the aperture has an enlarged size that allows the laser beam to cover at least the entire target bonding area.
  3. 3. The bonding apparatus of claim 2, wherein the shutter is driven by a stepper motor or a linear motor to move relative to the beam shaping head.
  4. 4. The bonding apparatus according to claim 2, wherein the shutter is movable in a length direction of the beam shaping head and in a width direction of the beam shaping head.
  5. 5. The bonding apparatus according to claim 4, wherein the shutter includes a first pair of blades movable toward each other in the length direction of the beam shaping head, and a second pair of blades movable toward each other in the width direction of the beam shaping head.
  6. 6. The bonding apparatus of claim 1, wherein the substrate carrier has a vent channel fluidly connected to a vacuum source to apply a vacuum pressure to the substrate when the substrate is placed on the substrate carrier.
  7. 7. A method for bonding a semiconductor die to a substrate, the method comprising: placing a substrate on a substrate carrier; Picking up a semiconductor die having a target bonding region by a pressing tool placed over the substrate carrier; placing the semiconductor die on the substrate by the pressing tool; Transmitting a laser beam from a laser source through a beam shaping element and the pressurizing tool toward the substrate carrier to preheat a portion of the target bonding region of the semiconductor die, wherein the beam shaping element is disposed between the laser source and the substrate carrier and shapes the laser beam in a preheated state; Switching the beam shaping element from the pre-heating state to a bonding state such that the laser beam emitted from the laser source covers at least the entire target bonding area, and The semiconductor die is pressed against the substrate by the pressing tool, so that the semiconductor die is bonded to the substrate when the beam shaping element is in the bonding state.
  8. 8. The method of claim 7, wherein the beam shaping element comprises: A beam shaping head having an opening at the center, and A baffle mounted to the beam shaping head and defining an aperture aligned with the opening of the beam shaping head, wherein the baffle is horizontally movable relative to the beam shaping head.
  9. 9. The method of claim 8, wherein preheating a portion of the target bonding region of the semiconductor die comprises: shaping the laser beam in the pre-heated state by the beam shaping element such that the aperture has a reduced size that allows the laser beam to cover a portion of the target bonding region.
  10. 10. The method of claim 8, wherein switching the beam shaping element from the pre-heated state to a bonding state comprises: The shutter is moved horizontally relative to the beam shaping head to allow the aperture to have an enlarged size to shape the laser beam in the bonding state that allows the laser beam to cover at least the entire target bonding area.
  11. 11. The method of claim 10, wherein the baffle is moved horizontally relative to the beam shaping head to allow the aperture to have an enlarged size prior to pressing the semiconductor die against the substrate by the pressing tool.
  12. 12. The method of claim 10, wherein moving the baffle horizontally with respect to the beam shaping head comprises moving the baffle in a length direction of the beam shaping head and in a width direction of the beam shaping head.
  13. 13. A bonding apparatus, comprising: a substrate carrier for placing a substrate; a laser source for emitting a laser beam towards the substrate carrier; A pressing tool movably placed between the laser source and the substrate carrier and configured for picking up a semiconductor die having a target bonding area and pressing the semiconductor die against the substrate, wherein the pressing tool is permeable to the laser beam such that the laser beam passes through the pressing tool to the semiconductor die when the semiconductor die is pressed against the substrate, and A beam shaping element disposed between the pressurizing tool and the laser source, wherein the beam shaping element shapes the laser beam to cover at least the entire target bonding region.

Description

Bonding device and bonding method implemented by the bonding device Technical Field The present application relates generally to semiconductor technology and, more particularly, to a bonding apparatus and a bonding method implemented by the bonding apparatus. Background The semiconductor industry has been faced with complex integration challenges as consumers desire their electronic devices to be smaller, faster, and more capable, and to package more and more functionality into a single device. In recent years, laser Compression Bonding (LCB) technology has been increasingly used in chip assembly processes due to its high bonding accuracy and efficiency. With respect to LCB processes for bonding a semiconductor die to a substrate, a laser source is used to emit a laser beam toward the semiconductor die and the substrate to heat the semiconductor die, the substrate, and solder paste therebetween. During this process, a transparent pressing tool is placed between the laser source and the semiconductor die and presses the semiconductor die against the substrate, bonding the semiconductor die to the substrate. However, the laser beam irradiated to the semiconductor die and the substrate may have an intensity that is not uniform. In other words, the laser beam may not be well focused on the entire irradiation region. For example, the laser energy in the peripheral region of the irradiated area may be reduced such that the peripheral region may not have sufficient energy to reflow the solder paste during the bonding process. This results in non-wetting of the formed solder bumps and poor bonding performance between the semiconductor die and the substrate. Accordingly, there is a need for an apparatus and method for bonding semiconductor die to a substrate with a higher bonding quality. Disclosure of Invention It is an object of the present application to provide an apparatus and method for bonding semiconductor die to a substrate with a higher bonding quality. According to an aspect of the present application, a bonding apparatus is provided. The bonding apparatus includes a substrate carrier for placing a substrate, a laser source for emitting a laser beam toward the substrate carrier, a pressing tool movably placed between the laser source and the substrate carrier and configured to pick up a semiconductor die having a target bonding area and press the semiconductor die against the substrate, wherein the pressing tool is permeable to the laser beam such that the laser beam passes through the pressing tool to reach the semiconductor die when the semiconductor die is pressed against the substrate, and a beam shaping element placed between the pressing tool and the laser source and configured to switchably shape the laser beam between a pre-heating state and a bonding state, wherein in the bonding state the laser beam covers at least the entire target bonding area and in the pre-heating state the laser beam covers a portion of the target bonding area to pre-heat the semiconductor die. According to another aspect of the present application, a method for bonding a semiconductor die to a substrate is provided. The method includes placing a substrate on a substrate carrier, picking up a semiconductor die having a target bonding area by a pressing tool placed over the substrate carrier, placing the semiconductor die on the substrate by the pressing tool, transmitting a laser beam from a laser source through a beam shaping element and the pressing tool toward the substrate carrier to preheat a portion of the target bonding area of the semiconductor die, wherein the beam shaping element is placed between the laser source and the substrate carrier and shapes the laser beam in a preheated state, switching the beam shaping element from the preheated state to a bonding state such that the laser beam transmitted from the laser source covers at least the entire target bonding area, and pressing the semiconductor die against the substrate by the pressing tool such that the semiconductor die is bonded to the substrate when the beam shaping element is in the bonding state. According to another aspect of the present application, a bonding apparatus is provided. The bonding apparatus includes a substrate carrier for placing a substrate, a laser source for emitting a laser beam toward the substrate carrier, a pressing tool movably placed between the laser source and the substrate carrier and configured to pick up a semiconductor die having a target bonding area and press the semiconductor die against the substrate, wherein the pressing tool is permeable to the laser beam such that the laser beam passes through the pressing tool to the semiconductor die when the semiconductor die is pressed against the substrate, and a beam shaping element placed between the pressing tool and the laser source, wherein the beam shaping element shapes the laser beam to cover at least the entire target bonding area. It is to be understood that both the