CN-121985860-A - Preparation method of aluminum liner and semiconductor

CN121985860ACN 121985860 ACN121985860 ACN 121985860ACN-121985860-A

Abstract

The application relates to a preparation method of an aluminum liner and a semiconductor, which comprises the steps of providing a substrate, growing an aluminum metal layer with a first thickness on the substrate, enabling the plane of the aluminum metal layer to be opposite to the surface of corrosive liquid, taking out the aluminum metal layer after the aluminum metal layer is placed in the corrosive liquid for a preset time, and growing an aluminum metal layer with a second thickness on one side of the substrate facing the aluminum metal layer after reducing a film layer generated by the reaction of the surface of the aluminum metal layer and the corrosive liquid to obtain the aluminum liner with a target thickness. According to the application, through the combined process of the first excessive deposition of aluminum and the second deposition of aluminum, the problems of ox horn defects and insufficient thickness of aluminum layers caused by the traditional magnetron sputtering process are effectively eliminated, and the probability of occurrence of hollow holes in the subsequent process is reduced.

Inventors

ZHANG ZHENG
JI XIAOLONG
HAN ZHUANGZHUANG
MU FAN
WEI RONG

Assignees

合肥晶合集成电路股份有限公司

Dates

Publication Date: 20260505
Application Date: 20260409

Claims (10)

1. A method of preparing an aluminum gasket, comprising: Providing a substrate; Growing an aluminum metal layer with a first thickness on the substrate, wherein the first thickness is larger than the height of the groove of the substrate; The plane of the aluminum metal layer is opposite to the surface of the corrosive liquid, and the aluminum metal layer is partially put into the corrosive liquid for a preset time and then taken out; and reducing the film layer generated by the reaction between the surface of the aluminum metal layer and the corrosive liquid, and growing an aluminum metal layer with a second thickness on one side of the substrate facing the aluminum metal layer to obtain the aluminum liner with the target thickness.
2. The method of preparing an aluminum gasket of claim 1 wherein said growing a first thickness of aluminum metal layer on said substrate comprises: and growing an aluminum metal layer with a first thickness on the substrate by adopting a physical vapor deposition process.
3. The method of manufacturing an aluminum gasket according to claim 1, wherein growing an aluminum metal layer of a second thickness on a side of the substrate facing the aluminum metal layer, comprises: and growing an aluminum metal layer with a second thickness on one side of the substrate facing the aluminum metal layer by adopting a physical vapor deposition process.
4. The method for preparing the aluminum gasket according to claim 1, wherein the corrosive liquid is sulfuric acid-hydrogen peroxide mixed corrosive liquid, and the mixing ratio of sulfuric acid to hydrogen peroxide is 0.5:1-1.5:1.
5. The method for producing an aluminum gasket according to claim 4, wherein the film layer formed by the reaction of the surface of the aluminum metal layer with the etching solution is an aluminum oxide layer; The film layer generated by the reaction of the surface of the aluminum metal layer and the corrosive liquid comprises the following components: And reducing the aluminum oxide layer by utilizing hydrogen radicals under the preset temperature condition by adopting an active radical precleaning process, wherein the preset temperature is 100-400 ℃.
6. The method of manufacturing an aluminum gasket according to claim 1, wherein a depth of the aluminum metal layer immersed in the etching solution is smaller than a difference between the first thickness and the trench height.
7. The method of producing an aluminum gasket according to claim 6, wherein the depth of the aluminum metal layer immersed in the etching liquid is smaller than the first thickness and larger than or equal to a difference between the first thickness and the trench height.
8. The method of preparing an aluminum gasket of claim 1 wherein said substrate comprises a concave trench.
9. The aluminum gasket manufacturing method according to claim 1, wherein a bottom of the ox horn region of the first thickness aluminum metal layer is greater than a height of the bottom of the trench as compared to the trench height.
10. A semiconductor comprising an aluminum pad, wherein the aluminum pad is prepared by the steps of the method for preparing an aluminum pad according to any one of claims 1 to 9.

Description

Preparation method of aluminum liner and semiconductor Technical Field The application relates to the technical field of semiconductor metal film preparation, in particular to an aluminum liner preparation method and a semiconductor. Background The Al Pad process is a key step in integrated circuit fabrication and is mainly used for metal interconnection and package connection. Al Pad processes often use magnetron sputtering operations to fill metal aluminum in trenches, such processes tend to produce bullhorn at wafer surface locations and cause problems with insufficient bottom metal aluminum (Al) thickness, which can lead to void (void) problems with insufficient filling during subsequent processing, resulting in reduced semiconductor device yield and lack of reliability. Disclosure of Invention Accordingly, it is necessary to provide a method for manufacturing an aluminum Pad and a semiconductor capable of effectively improving ox horn defect, insufficient thickness of bottom aluminum layer and subsequent void generation in the Al Pad process. In a first aspect, the present application provides a method for preparing an aluminum gasket, comprising: Providing a substrate; Growing an aluminum metal layer with a first thickness on the substrate, wherein the first thickness is larger than the height of the groove of the substrate; The plane of the aluminum metal layer is opposite to the surface of the corrosive liquid, and the aluminum metal layer is partially put into the corrosive liquid for a preset time and then taken out; and reducing the film layer generated by the reaction between the surface of the aluminum metal layer and the corrosive liquid, and growing an aluminum metal layer with a second thickness on one side of the substrate facing the aluminum metal layer to obtain the aluminum liner with the target thickness. In one embodiment, the growing an aluminum metal layer of a first thickness on the substrate includes: and growing an aluminum metal layer with a first thickness on the substrate by adopting a physical vapor deposition process. In one embodiment, the growing the aluminum metal layer with the second thickness on the side of the substrate facing the aluminum metal layer includes: and growing an aluminum metal layer with a second thickness on one side of the substrate facing the aluminum metal layer by adopting a physical vapor deposition process. In one embodiment, the corrosive liquid is sulfuric acid and hydrogen peroxide mixed corrosive liquid, wherein the mixing ratio of sulfuric acid to hydrogen peroxide is 0.5:1-1.5:1. In one embodiment, the film layer generated by the reaction between the surface of the aluminum metal layer and the corrosive liquid is an aluminum oxide layer; The film layer generated by the reaction of the surface of the aluminum metal layer and the corrosive liquid comprises the following components: And reducing the aluminum oxide layer by utilizing hydrogen radicals under the preset temperature condition by adopting an active radical precleaning process, wherein the preset temperature is 100-400 ℃. In one embodiment, the depth of the aluminum metal layer immersed in the etching solution is smaller than the difference between the first thickness and the trench height. In one embodiment, the depth of the aluminum metal layer immersed in the etching solution is smaller than the first thickness and is larger than or equal to the difference between the first thickness and the trench height. In one embodiment, the substrate includes a concave trench. In one embodiment, the bottom of the bullnose area of the first thickness of aluminum metal layer is greater than the trench height compared to the height of the bottom of the trench. In a second aspect, the embodiment provides a semiconductor, which includes an aluminum liner, wherein the aluminum liner is prepared by adopting the steps of the preparation method of the aluminum liner in the first aspect. In summary, the application provides a preparation method of an aluminum liner and a semiconductor, comprising the steps of providing a substrate, growing an aluminum metal layer with a first thickness on the substrate, wherein the first thickness is larger than the height of a groove of the substrate, enabling a plane where the aluminum metal layer is located to be opposite to the surface of etching solution, putting part of the aluminum metal layer into the etching solution for a preset time, taking out the etching solution, reducing a film layer generated by the reaction between the surface of the aluminum metal layer and the etching solution, and growing an aluminum metal layer with a second thickness on one side of the substrate facing the aluminum metal layer to obtain the aluminum liner with a target thickness. According to the application, through the combined process of the first excessive deposition of aluminum and the second deposition of aluminum, the problems of ox horn defects and insufficient thickness of