CN-121985866-A - Panel level packaging method of vertical power device

CN121985866ACN 121985866 ACN121985866 ACN 121985866ACN-121985866-A

Abstract

A panel-level packaging method of a vertical power device comprises a vertical power device wafer, wherein a single electric network pad is arranged on the bottom surface of the vertical power device wafer, a pad is also arranged on the top surface of the vertical power device wafer, the panel-level packaging method further comprises an L-shaped metal substrate, one side of the L-shaped metal substrate is smaller in thickness, the other side of the L-shaped metal substrate is larger in thickness, the vertical power device wafer is welded on the top surface of the side of the L-shaped metal substrate, which is smaller in thickness, through the bottom surface pad to form a pre-packaging unit, the pre-packaging unit of a group of wafers is arranged on a temporary adhesive layer coated on a wafer carrier plate in an array mode, then integral epoxy resin plastic packaging is carried out, and cutting is carried out after curing, so that a group of vertical power device packaging units is obtained. The L-shaped metal substrate is used as a conductive pole piece of the vertical power device, can design large current carrying package and optimize device parameters, adopts a panel level package process and adopts a method of pre-packaging single bodies, thereby improving production efficiency and reducing production cost.

Inventors

ZHAO ZHENTAO

Assignees

赵振涛

Dates

Publication Date: 20260505
Application Date: 20251127

Claims (3)

1. The panel-level packaging method of the vertical power device is characterized by comprising a vertical power device wafer, wherein a single electric network pad is arranged on the bottom surface of the vertical power device wafer, and a pad is also arranged on the top surface of the power device wafer; the vertical power device comprises an L-shaped metal substrate, a wafer carrier plate, a temporary adhesive layer, an array type wafer carrier plate, a temporary adhesive layer, a packaging unit and a packaging unit, wherein the L-shaped metal substrate is arranged on the upper surface of the L-shaped metal substrate, the thickness of one side of the L-shaped metal substrate is smaller, the thickness of the other side of the L-shaped metal substrate is larger, the vertical power device wafer is welded on the upper surface of the L-shaped metal substrate through a bottom surface bonding pad on the upper surface of the side of the L-shaped metal substrate, which is smaller, the upper surface of the vertical power device wafer is flush with the upper surface of the side of the L-shaped metal substrate, which is larger, the vertical power device wafer is welded with the upper surface of the L-shaped metal substrate into a whole, the vertical power device wafer is prepared into a group of the pre-packaging unit, the wafer carrier plate is coated on the upper surface of the temporary adhesive layer in a downward direction according to set position coordinates, the top surface bonding pad of the wafer is attached to the temporary adhesive layer, the array type wafer carrier plate is arranged on the temporary adhesive layer, the temporary adhesive layer is peeled off after the wafer carrier plate is solidified, the whole epoxy resin plastic package is removed, and the whole adhesive layer is cut according to the design size of the whole packaging unit, and the whole packaging unit is cut to obtain the vertical power device.
2. The method of claim 1 wherein the L-shaped metal substrate is a ceramic substrate, the ceramic substrate comprises a top circuit layer, a ceramic substrate layer and a bottom circuit layer, a boss is arranged on one side of the top circuit layer of the ceramic substrate, and the top surface of the boss is flush with the top surface of the wafer of the vertical power device.
3. The method of claim 1, wherein the method is characterized in that after the pre-packaging single bodies of a group of wafers are subjected to integral epoxy resin plastic packaging and curing, the top surface of the integral epoxy resin plastic packaging is ground until the bottom surface of the L-shaped metal substrate of the pre-packaging single bodies of the group of wafers is exposed, then the wafer carrier plate is peeled off, the temporary adhesive layer adhered to the integral packaging plate is removed, and the integral packaging plate is cut according to the design size of the packaging single bodies, so that the group of vertical power device packaging single bodies are obtained.

Description

Panel level packaging method of vertical power device Technical Field The invention relates to a packaging process for a power device, chip heat dissipation process optimization and architecture design, and relates to a Panel Level (PLP) packaging technology. Background Panel Level Packaging (PLP) is a semiconductor packaging technology using a rectangular panel as a carrier, and is capable of improving production efficiency and reducing cost by using a larger-sized substrate, and is accelerating penetration into AI, automotive electronics and high-end computing fields. The technology can replace the traditional 300mm wafer with a rectangular substrate with the thickness of 500mm multiplied by 500mm or even larger, the number of single-time encapsulated chips is greatly increased, and the technology is particularly suitable for mass production scenes. The method has the core advantages of higher area utilization rate and less edge waste, and can reuse the existing PCB production line equipment. Vertical power devices (e.g., diodes, field effect transistors MOSFETs, high electron mobility transistors HEMTs, and IGBTs) are widely used in high power electronic devices such as power management modules, electric vehicle drive systems, and industrial motor control. Third generation semiconductor materials GaN (gallium nitride) and SiC (silicon carbide) are representative of wide bandgap semiconductors. The power device manufactured by gallium nitride has the remarkable characteristics of high switching speed, low on-resistance, small chip area and the like, and is widely applied to the fields of power adapters, industrial power supplies, automobile electronics and the like. Ultra-wideband power devices, which are mainly represented by diamond, gallium oxide and the like, are also coming into practical use. The power devices they make can operate at higher temperatures. Conventional power device packages typically employ complex lead frame and metal clip structures to make electrical connection. However, this packaging method has the problems of complicated process, additional metal clips and soldering steps, increased manufacturing cost and time, limited heat dissipation performance, and long heat dissipation path in the conventional package, resulting in high thermal resistance and affecting the device performance. Disclosure of Invention In order to solve the problems, the invention provides a panel-level packaging method of a vertical power device, which optimizes a packaging structure, improves heat dissipation performance, adopts a panel-level packaging process, adopts a method of pre-packaging single bodies, improves efficiency and reduces manufacturing cost. The invention provides a panel-level packaging method of a vertical power device, which comprises a vertical power device wafer, wherein a single electric network bonding pad is distributed on the bottom surface of the vertical power device wafer, bonding pads are distributed on the top surface of the vertical power device wafer, bonding pads are plated on the bonding pads of the wafer to produce a weldable material, the panel-level packaging method further comprises an L-shaped metal substrate, one side of the L-shaped metal substrate is smaller in thickness, the other side of the L-shaped metal substrate is larger in thickness, the L-shaped metal substrate can be prepared by adopting a CNC (computer numerical control) process or an etching process, the vertical power device wafer is welded on the top surface of the side of the L-shaped metal substrate on which the thickness is smaller through the bonding pads on the bottom surface, solder is solder paste or sintered silver paste, the top surface of the vertical power device wafer is leveled with the top surface of the side of the L-shaped metal substrate on which the thickness is larger, the vertical power device wafer and the L-shaped metal substrate are integrally welded to form pre-packaging monomers, a group of the vertical power device wafer is prepared to form a group of pre-packaging monomers, the wafer carrier plate is coated on the top surface of the wafer carrier plate, the temporary bonding layer can be prepared by adopting an epoxy resin filling glue or a temporary bonding glue, the temporary bonding layer is arranged on the top surface of the wafer carrier plate, the temporary bonding layer is temporarily bonded on the wafer carrier plate, the temporary bonding layer is set to be placed on the wafer carrier to the wafer carrier layer according to the temporary bonding layer, and the temporary bonding layer is integrally bonded to the temporary bonding layer, and the temporary bonding layer is set to the temporary bonding layer and the temporary bonding layer is set to the wafer packaging layer, and the temporary bonding layer is adhered to the wafer packaging layer and the temporary packaging layer is integrally to the packaging wafer and the packaging layer, and the packaging layer is i