CN-121986144-A - Adhesive tape for semiconductor processing and method for manufacturing semiconductor

Abstract

The purpose of the present invention is to provide an adhesive tape for semiconductor processing which has excellent antistatic properties and transparency and can be easily peeled off even after high-temperature treatment. The present invention also provides a method for producing a semiconductor using the adhesive tape for semiconductor processing. The present invention relates to an adhesive tape for semiconductor processing, which comprises, in order, an adhesive layer, a conductive layer, and a substrate, wherein the adhesive layer contains a photocurable adhesive, the visible light transmittance of the adhesive tape for semiconductor processing measured from the adhesive layer side is 50% or more, the adhesive tape for semiconductor processing is further heated at 260 ℃ for 5 minutes after the adhesive tape for semiconductor processing is bonded to a silicon wafer, and the adhesive tape for semiconductor processing is heated at 180 ℃ for 3 hours after the adhesive tape for semiconductor processing is irradiated with light having a wavelength of 405nm at an accumulated illuminance of 3000mJ/cm 2 , the 180 DEG peel force of the adhesive tape for semiconductor processing at 23 ℃ and a peel speed of 300mm/min is less than 0.15N/25mm, and the adhesive tape for semiconductor processing is heated at 23 ℃ and a peel force of 180 ℃ of 0.5N/25mm or less after the adhesive tape for semiconductor processing is bonded to a silicon wafer, the adhesive tape for semiconductor processing is irradiated with light having a wavelength of 405nm at an accumulated illuminance of 3000mJ/cm 2 .

Inventors

• UEDA KOZO
• YABUGUCHI Hirohide

Assignees

• 积水化学工业株式会社

Dates

Publication Date

20260505

Application Date

20250324

Priority Date

20240325

Claims (12)

1. 1. An adhesive tape for semiconductor processing, characterized by comprising an adhesive layer, a conductive layer and a base material in this order, The adhesive layer contains a photo-curable adhesive, The visible light transmittance of the adhesive tape for semiconductor processing measured from the adhesive layer side is 50% or more, When the adhesive tape for semiconductor processing is irradiated with light having a wavelength of 405nm at an accumulated illuminance of 3000mJ/cm 2 after the adhesive tape for semiconductor processing is bonded to a silicon wafer, the 180 DEG peel force of the adhesive tape for semiconductor processing at 23 ℃ and a peel speed of 300mm/min is less than 0.15N/25mm, and After the adhesive tape for semiconductor processing is bonded to a silicon wafer, the adhesive tape for semiconductor processing is irradiated with light having a wavelength of 405nm at an accumulated illuminance of 3000mJ/cm 2 , and then the adhesive tape for semiconductor processing is further heated at 260 ℃ for 5 minutes and then further heated at 180 ℃ for 3 hours, and then the 180 DEG peel force of the adhesive tape for semiconductor processing at 23 ℃ and a peel speed of 300mm/min is 0.5N/25mm or less.
2. 2. The adhesive tape for semiconductor processing according to claim 1, wherein a surface resistivity of the adhesive layer side of the adhesive tape for semiconductor processing after light having a wavelength of 405nm is irradiated to the adhesive tape for semiconductor processing at an accumulated illuminance of 3000mJ/cm 2 is set to R 1 Ω/∈and a surface resistivity of the adhesive layer side of the adhesive tape for semiconductor processing after light having a wavelength of 405nm is irradiated to the adhesive tape for semiconductor processing at an accumulated illuminance of 3000mJ/cm 2 is set to R 2 Ω/∈and both of R 1 and R 2 at this time are 1.0x10 14 Ω/∈and are heated at 260 ℃ for 5 minutes and then heated at 180 ℃ for 3 hours The rate of change R 2 /R 1 of the surface resistivity of the adhesive layer side of the adhesive tape for semiconductor processing before and after heating is 500 or less.
3. 3. The adhesive tape for semiconductor processing according to claim 1 or 2, wherein the photocurable adhesive contains a filler.
4. 4. The adhesive tape for semiconductor processing according to claim 1, 2 or 3, wherein the photocurable adhesive contains a release agent.
5. 5. The adhesive tape for semiconductor processing according to claim 1, 2, 3 or 4, wherein the thickness of the adhesive layer is 10 μm or more and 300 μm or less.
6. 6. The adhesive tape for semiconductor processing according to claim 1, 2, 3,4, or 5, wherein the conductive layer comprises an organic layer.
7. 7. The adhesive tape for semiconductor processing according to claim 1,2, 3,4, 5, or 6, wherein the conductive layer contains a conductive polymer.
8. 8. The adhesive tape for semiconductor processing according to claim 7, wherein the conductive polymer comprises a polythiophene-based polymer.
9. 9. The adhesive tape for semiconductor processing according to claim 1, 2,3, 4, 5, 6, 7 or 8, wherein the thickness of the conductive layer as a whole is 0.001 μm or more and 1 μm or less.
10. 10. The adhesive tape for semiconductor processing according to claim 1,2, 3,4, 5, 6, 7, 8 or 9, wherein the base material contains a resin (A1), and the resin (A1) has a repeating unit containing at least 1 selected from the group consisting of an ether bond, a ketone group and an ester bond in a main chain skeleton.
11. 11. The adhesive tape for semiconductor processing according to claim 1,2, 3, 4, 5, 6, 7, 8, 9 or 10, wherein the adhesive tape for semiconductor processing has a thermal weight loss rate at 260 ℃ of 10% or less.
12. 12. A method of manufacturing a semiconductor, comprising: A step of attaching the adhesive tape for semiconductor processing according to claim 1, 2, 3,4,5,6, 7, 8, 9, 10 or 11 to a semiconductor device to produce a laminate; A step of heating the laminate, and And peeling the adhesive tape for semiconductor processing from the laminate.

Description

Adhesive tape for semiconductor processing and method for manufacturing semiconductor Technical Field The present invention relates to an adhesive tape for semiconductor processing. The present invention also relates to a method for manufacturing a semiconductor using the adhesive tape for semiconductor processing. Background In the processing of electronic parts such as semiconductors, in order to facilitate handling of the electronic parts and prevent breakage, the electronic parts are fixed to a support by a temporary fixing material containing an adhesive composition, or the electronic parts are protected by attaching a tape-shaped temporary fixing material having an adhesive layer to the electronic parts. For example, when a thin film wafer is produced by grinding a thick film wafer cut from high purity single crystal silicon or the like to a predetermined thickness, the thick film wafer is bonded to a support via a temporary fixing material. As such a temporary fixing material for temporarily fixing electronic components, high adhesion is required to fix the electronic components as firmly as possible in a processing step, and peeling is required to be possible without damaging the electronic components after the end of the step (hereinafter, also referred to as "high adhesion easy peeling"). As a means for realizing high adhesion and easy peeling, for example, patent document 1 discloses an adhesive sheet using an adhesive in which a polyfunctional monomer or oligomer having a radiation polymerizable functional group is bonded to a side chain or a main chain of a polymer. By having a radiation polymerizable functional group, the polymer is cured by ultraviolet irradiation, and by using this, the adhesive force is reduced by irradiation of ultraviolet rays at the time of peeling, and peeling can be performed without residual adhesive. In addition, an adhesive tape used in a manufacturing process of a semiconductor device is required to have excellent antistatic performance so that a circuit is not broken by static electricity. As an adhesive tape having excellent antistatic performance, for example, an antistatic adhesive tape in which a conductive filler is dispersed in an adhesive layer is known (for example, patent documents 2 to 4). Prior art literature Patent literature Patent document 1 Japanese patent laid-open No. 5-32946 Patent document 2 Japanese patent application laid-open No. 2012-007093 Patent document 3 Japanese patent laid-open No. 9-207259 Patent document 4 Japanese patent laid-open publication 2016-089021 Disclosure of Invention Problems to be solved by the invention In the manufacturing process of the semiconductor device, the circuit pattern of the semiconductor device may be recognized from the adhesive tape side and positioned at the time of processing, and thus excellent transparency is also required for the adhesive tape. However, if the conventional antistatic adhesive tape is blended with a conductive filler to such an extent that sufficient antistatic performance is imparted, transparency becomes low. When such an adhesive tape having low transparency is attached to a semiconductor device, there is a problem that it is difficult to identify a circuit pattern on the semiconductor device and to manage a process by the adhesive tape. In addition, with the recent improvement in performance of semiconductor devices, high-temperature processing is performed on the surfaces of the semiconductor devices. For example, as a next-generation technology, a three-dimensional lamination technology using TSVs (Through Si Via) in which a plurality of semiconductor chips are laminated to make a device significantly higher in performance and smaller is attracting attention. In addition to the high density of semiconductor mounting, the TSV can reduce noise and resistance by shortening the connection distance, and the TSV is remarkably fast in access rate and excellent in heat release during use. In the manufacture of such TSVs, it is necessary to perform a high-temperature treatment process such as bumping a thin film wafer obtained by grinding, forming a bump on the back surface, or performing reflow soldering at the time of three-dimensional lamination. However, in the conventional antistatic pressure-sensitive adhesive tape, if the tape is subjected to a high-temperature treatment, the antistatic performance is significantly reduced, and there is a problem that cracking may occur on the semiconductor surface when the pressure-sensitive adhesive tape is released from the semiconductor. Further, since the pressure-sensitive adhesive tape is highly adhered to the adherend, the adhesive force at the time of peeling is not sufficiently lowered, and there is a problem that the adhesive residue may be generated on the adherend at the time of peeling. The purpose of the present invention is to provide an adhesive tape for semiconductor processing which has excellent antistatic properties and transp