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CN-121986184-A - Metal sputtering target, metal sputtering target structure, method for producing film using same, and method for producing metal sputtering target

CN121986184ACN 121986184 ACN121986184 ACN 121986184ACN-121986184-A

Abstract

The metal sputtering target comprises a metal having a body-centered cubic structure or a face-centered cubic structure. In a metal sputtering target, when a cross section perpendicular to a sputtering surface of the metal sputtering target is observed by an electron back scattering diffraction method and crystal orientation is analyzed from a normal direction (ND direction) of the sputtering surface, a ratio of a measurement point having a plane direction within 15 DEG from a plane direction having highest intensity on a space of an inverse pole figure obtained from all measurement points to all measurement points is 35 area% or more, and Euler angle @ expressing crystal orientation is used ) Representing the crystal orientation distribution function of a metal sputter target 1: K DEG (0≤k≤90), Φ: x DEG (0≤x) less than or equal to 90 percent) In the alignment group of 2:y DEG (0≤y≤90), the variation coefficient of the average value of the alignment density in the range of 0≤k≤90 is 0.5 or less in the combination of all (x, y) s of 1.2 or more.

Inventors

  • Positive energy
  • KONDO HIROMASA
  • YUAN HAOZHI
  • MESUDA MASAMI

Assignees

  • 东曹株式会社

Dates

Publication Date
20260505
Application Date
20240815
Priority Date
20230817

Claims (12)

  1. 1. A metal sputtering target comprising a metal having a body-centered cubic structure or a face-centered cubic structure, In the metal sputtering target, when a cross section perpendicular to a sputtering surface of the metal sputtering target is observed by an electron back scattering diffraction method and crystal orientation is analyzed from a normal direction of the sputtering surface, that is, an ND direction, a ratio of a measurement point having a plane direction within 15 DEG from a plane direction having highest intensity in an inverse polar plot space obtained from all the measurement points to all the measurement points is 35 area% or more, and When using Euler angle% ) Representing the crystal orientation distribution function of the metal sputtering target 1:K DEG (0≤k≤90), phi: x DEG (0≤x≤90) and A group of orientations at 2:y DEG (0≤y≤90), wherein the average value of the orientation densities in the range of 0≤k≤90 is not less than 1.2 in all combinations of (x, y), the coefficient of variation of the average value is not more than 0.5, and the Euler angle is [. Times. ) The crystal coordinate system is rotated around the Z axis from a state in which the crystal coordinate system with the [100] direction of the crystal as the X axis, the [010] direction as the Y axis and the [001] direction as the Z axis are respectively identical to RD, TD, ND of an orthogonal sample coordinate system as the metal sputtering target 1, Then rotate Φ around the rotated X-axis, further apply around the rotated Z-axis 2, Thereby describing the crystal orientation.
  2. 2. The metal sputtering target according to claim 1, wherein the ratio is 98 area% or less.
  3. 3. The metal sputtering target according to claim 1 or 2, wherein a coefficient of variation of the average value is 0.01 or more.
  4. 4. A metal sputtering target according to any one of claims 1 to 3, wherein the maximum value of the crystal orientation distribution function is 2.0 or more.
  5. 5. The metal sputtering target according to any one of claims 1 to 4, wherein a maximum value of a crystal orientation distribution function is 50 or less.
  6. 6. The metal sputtering target according to any one of claims 1 to 5, wherein the metal is 1 or more selected from chromium (Cr), iron (Fe), ruthenium (Ru), niobium (Nb), molybdenum (Mo), tantalum (Ta), vanadium (V), tungsten (W), aluminum (Al), copper (Cu), and nickel (Ni).
  7. 7. The metal sputtering target according to any one of claims 1 to 6, wherein the metal is 1 or more selected from chromium (Cr), ruthenium (Ru), molybdenum (Mo), and tungsten (W).
  8. 8. A metal sputtering target structure according to claim 1 to 7, comprising a metal sputtering target and a backing plate.
  9. 9. A method for producing a film, characterized by using the metal sputtering target according to any one of claims 1 to 7 or the metal sputtering target structure according to claim 8.
  10. 10. The method for producing a metal sputtering target according to any one of claims 1 to 7, comprising: a pressurizing step in which an ingot containing a metal having a body-centered cubic structure or a face-centered cubic structure is pressurized at a pressurizing temperature of 500 ℃ or higher using a buffer member having a buffer layer to obtain a processed ingot, and And a heat treatment step in which the processed ingot is treated at 900 ℃ or higher.
  11. 11. The method for manufacturing a metal sputtering target according to claim 10, wherein the buffer layer is a buffer layer having a coating layer.
  12. 12. The method of manufacturing a metal sputtering target according to claim 10 or 11, wherein the buffer layer is a buffer layer having a graphite lubricant coating.

Description

Metal sputtering target, metal sputtering target structure, method for producing film using same, and method for producing metal sputtering target Technical Field The present disclosure relates to a metal sputtering target, a metal sputtering target structure, a method for producing a film using the same, and a method for producing a metal sputtering target. Background Sputtering targets are widely used as thin film forming materials for semiconductor wiring and photolithographic masks. With the recent increase in the integration level of semiconductors, thin films constituting the semiconductors have also been miniaturized. In particular, a fine difference in film thickness (film thickness distribution) of the thin film greatly affects the product yield. In the film formation by sputtering, it is known that the crystal orientation of a sputtering target greatly affects the film thickness distribution at the time of film formation. For example, non-patent document 1 discloses that sputtered particles fly out in the direction of the closest packing of a sputtering target. In addition, non-patent document 2 reports that the crystal lattice vibration caused by thermal interference fluctuates in the closest packing direction and that the crystal lattice vibration caused by the high temperature increases, that is, the film thickness uniformity deteriorates during film formation at high temperature. On the other hand, patent document 1 and patent document 2 report that the film thickness uniformity is improved by manufacturing a sputtering target such that the closest-packed direction is oriented in the normal direction of the sputtering surface. Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2014-129599 Patent document 2 Japanese patent application laid-open No. 2012-507626 Non-patent literature Non-patent document 1:Gottfried K.Wehner,Phys.Rev.102,690 (1956) Non-patent document 2:F.Bouchard et al, J.Vac.Sci.Technol. A11,2765 (1993) Disclosure of Invention Technical problem to be solved by the invention However, the sputtering targets described in non-patent document 1 and non-patent document 2 and patent document 1 and patent document 2 only perform orientation control in the normal direction of the sputtering surface. The present disclosure aims to provide at least one of a metal sputtering target suitable for forming a sputtered film having a uniform film thickness by sputtering, a metal sputtering target structure, a film manufacturing method using the same, and a metal sputtering target manufacturing method. Technical scheme for solving technical problems In the present disclosure, the inventors have focused on the crystalline structure of a metal sputtering target, and studied improvement in uniformity of thickness of a film formed by sputtering. As a result, the inventors have found that the conventional metal sputtering target causes anisotropy in the flying angle of sputtered particles due to in-plane anisotropy of the sputtering surface, and the film thickness of the formed sputtered film becomes uneven. As a result of further studies, it was found that by setting the in-plane orientation of the metal sputtering target to a specific state, the uniformity of the film thickness of the obtained sputtered film (thin film) was improved. That is, the present invention is described in the following embodiments. [1] A metal sputtering target comprising a metal having a body-centered cubic structure or a face-centered cubic structure, in which metal sputtering target, In the case of observing a cross section perpendicular to the sputtering surface of a metal sputtering target by using an electron back scattering diffraction method and analyzing the crystal orientation from the normal direction (ND direction) of the sputtering surface, the ratio of the measurement point having a plane direction within 15 DEG from the plane direction having the highest intensity in the space of the inverse pole figure obtained from all the measurement points to all the measurement points is 35 area% or more, and When using Euler angle%) Representing the crystal orientation distribution function of the metal sputtering target1:K DEG (0≤k≤90), phi: x DEG (0≤x≤90) andA group of orientations at 2:y DEG (0≤y≤90), wherein the average value of the orientation densities in the range of 0≤k≤90 is not less than 1.2 in all combinations of (x, y), the coefficient of variation of the average value is not more than 0.5, and the Euler angle is [. Times.) The crystal coordinate system is rotated around the Z axis from a state in which the crystal coordinate system with the [100] direction of the crystal as the X axis, the [010] direction as the Y axis and the [001] direction as the Z axis are respectively identical to RD, TD, ND of an orthogonal sample coordinate system as a sputtering target1, Then rotate Φ around the rotated X-axis, further apply around the rotated Z-axis2, Thereby describing