CN-121986185-A - System and method for forming large area electronic grade metal chalcogen film

Abstract

A vapor deposition system is described. The vapor deposition system includes a reaction chamber and a reactant delivery subsystem coupled to the reaction chamber. The reaction chamber is configured to hold a substrate therein. The reactant delivery subsystem includes an inlet, a pre-reaction zone, and an outlet. The inlet receives the precursor and chalcogen precursor(s). The pre-reaction zone is configured to receive the precursors from a portion of the inlet and react at least a portion of the precursors to form the modified precursor(s). The modified precursor(s) are more thermally stable than the metal-containing precursor(s) used in forming the modified precursor(s) in the precursor. The outlet is coupled to the reaction chamber and the pre-reaction zone. The outlet provides the modifying precursor(s) and chalcogen precursor(s) separately to the reaction chamber. The modified precursor(s) and chalcogen precursor(s) react in the reaction chamber and form a chalcogen film on the substrate.

Inventors

• L-J.Li
• Y.Wan
• Y-M.Zhang

Assignees

• 香港大学

Dates

Publication Date

20260505

Application Date

20240904

Priority Date

20230914

Claims (20)

1. 1. A vapor deposition system, comprising: A reaction chamber configured to hold a substrate therein; A reactant delivery subsystem coupled with the reaction chamber and comprising: A plurality of inlets for receiving a plurality of precursors and at least one chalcogen precursor; A pre-reaction zone configured to receive the plurality of precursors from a portion of the plurality of inlets and react at least a portion of the plurality of precursors to form a modified precursor that is more thermally stable than the metal-containing precursor of the at least a portion of the plurality of precursors, and A plurality of outlets coupled with the reaction chamber and the pre-reaction zone, the plurality of outlets separately providing the modifying precursor and the at least one chalcogen precursor to the reaction chamber; Wherein the modified precursor and the at least one chalcogen precursor react and form a chalcogen film on the substrate in the reaction chamber.
2. 2. The vapor deposition system of claim 1, wherein the reactant delivery subsystem comprises: A heated pre-reaction chamber including the pre-reaction zone therein, the at least a portion of the plurality of precursors reacting within the heated pre-reaction chamber in the absence of the at least one chalcogen precursor to form the modified precursor, and A distribution unit coupled with the heated pre-reaction chamber by a flow channel, the distribution unit comprising the plurality of outlets and coupled with at least one of the plurality of inlets for the at least one chalcogen precursor.
3. 3. The vapor deposition system of claim 1, wherein the pre-reaction zone is adjacent to the plurality of outlets and the plurality of precursors react within the pre-reaction zone in the absence of the at least one chalcogen precursor to form the modified precursor.
4. 4. The vapor deposition system of claim 1, wherein the pre-reaction zone comprises a heater.
5. 5. The vapor deposition system of claim 4, wherein the pre-reaction zone is at a temperature less than a reaction chamber temperature of the reaction chamber.
6. 6. The vapor deposition system of claim 4, wherein the reactant delivery subsystem further comprises: a cooling zone coupled with the portion of the plurality of inlets and the pre-reaction zone, the cooling zone configured to maintain a cooling zone temperature below a decomposition temperature of the metal-containing precursor.
7. 7. The vapor deposition system of claim 1, wherein the plurality of precursors includes a modifier for the metal-containing precursor, the modifier reacting with the metal-containing precursor in the pre-reaction zone to form the modified precursor.
8. 8. The vapor deposition system of claim 1, wherein the modified precursor has a higher decomposition temperature than the metal-containing precursor.
9. 9. The vapor deposition system of claim 1, wherein the plurality of precursors comprises a dopant precursor, the chalcogen film comprising a dopant in the dopant precursor.
10. 10. The vapor deposition system of claim 1, wherein a first portion of the plurality of outlets is coupled with the pre-reaction zone and provides the modifying precursor to the reaction chamber, and Wherein a second portion of the plurality of outlets provides the at least one chalcogen precursor to the reaction chamber separately from the modifying precursor.
11. 11. The vapor deposition system of claim 1, wherein the reactant delivery subsystem further comprises: a gas distribution system coupled to the plurality of outlets such that at least a portion of the plurality of outlets have individually controllable flow rates.
12. 12. The vapor deposition system of claim 1, wherein the substrate has a substrate region, the plurality of outlets are distributed over a region, the region is at least 1/2 of the substrate region, and at least a portion of the region is aligned with at least a portion of the substrate region.
13. 13. The vapor deposition system of claim 1, wherein the metal-containing precursor comprises at least one of a W or Mo element, the plurality of precursors comprises at least one of water, a Fe dopant, or a V dopant, and the at least one chalcogen precursor comprises at least one of S, te or a Se element.
14. 14. An apparatus, comprising: A substrate, and A Transition Metal Chalcogen (TMC) film formed on the substrate by vapor deposition, the TMC film covering at least one square inch of the area of the substrate.
15. 15. The device of claim 14, wherein the TMC film is a two-dimensional film having a thickness of at least one monolayer.
16. 16. The device of claim 15, wherein the TMC film is a doped TMC film.
17. 17. The apparatus of claim 15, wherein the area is at least four square inches.
18. 18. A method, comprising: Reacting at least a portion of the plurality of precursors in a pre-reaction zone to form a modified precursor that is more thermally stable than the metal-containing precursor of the at least a portion of the plurality of precursors, and Separately supplying the modifying precursor and at least one chalcogen precursor to a reaction chamber, and Wherein the modified precursor and the at least one chalcogen precursor react and form a chalcogen film on the substrate in the reaction chamber.
19. 19. The method of claim 18, further comprising: delivering the plurality of precursors to the pre-reaction zone, the plurality of precursors including a dopant precursor, and Wherein the dopant in the dopant precursor is incorporated into the chalcogen film to form a doped chalcogen film on the substrate in the reaction chamber.
20. 20. The method of claim 18, wherein the plurality of precursors further comprises a modifier for the metal-containing precursor.

Description

System and method for forming large area electronic grade metal chalcogen film Cross Reference to Related Applications The present application claims U.S. provisional patent application No. 63/582708 (entitled "VAPOR DEPOSITION AND DOPING METHOD TO FORM LARGE-AREA ELECTRONIC-GRADE METAL CHALCOGEN ULTRATHIN FILMS"）, priority), filed on 9/14 at 2023, which is incorporated herein by reference for all purposes. Background Two-dimensional (2D) Transition Metal Chalcogenide (TMC) materials may include binary, ternary, quaternary and multi-element oxides, sulfides, selenides and tellurides. TMC has applications in various fields. For example, 2D TMCs (such as MoS 2、WSe2、WS2、MoTe2、MoSe2, snSe, and SnS) may be semiconductors. Such films, as well as other TMC materials (e.g., TMC in metallic form, such as WTe 2、TiSe2) may be used in electronic applications. Despite the interest in TMC, growing TMC films using conventional vapor deposition techniques, such as Chemical Vapor Deposition (CVD) and/or Atomic Layer Deposition (ALD), suffers from various drawbacks. Conventional vapor deposition techniques may require precise temperature control over a narrow window. This makes processing more difficult and expensive. Such techniques may also suffer from poor processing efficiencies due to the low decomposition temperatures of many volatile metal-containing precursors. These precursors may decompose before reaching the reaction temperature for TMC formation. Such metal-containing precursors may also have a small diffusion length, resulting in TMC films grown only on small areas of the substrate (e.g., on the order of one square centimeter or two square centimeters or less). Doping using conventional vapor deposition can also be problematic. Although the dopant may be introduced into the reaction chamber in gaseous form, the resulting material may not have the desired uniformity or dopant concentration. Carbon residues from the organic ligand(s) in the precursor can present serious problems in vapor deposition systems. Thus, techniques for forming chalcogenides (particularly 2D TMC) are needed. Drawings Various embodiments of the invention are disclosed in the following detailed description and the accompanying drawings. FIG. 1 is a block diagram depicting an embodiment of a vapor deposition system for providing a metal chalcogenide material. FIG. 2 is a diagram depicting an embodiment of a vapor deposition system for providing a metal chalcogenide material. FIG. 3 is a diagram depicting an embodiment of a vapor deposition system for providing a metal chalcogenide material. Fig. 4A-4D are diagrams depicting a portion of a vapor deposition system for providing a metal chalcogenide material. FIG. 5 is a diagram depicting an embodiment of a gas distribution system that may be used in a vapor deposition system for fabricating metal chalcogenide materials. Fig. 6A-6D are diagrams depicting embodiments of vapor deposition systems that may be used to fabricate metal chalcogenide materials. Fig. 7 is a flow chart depicting an embodiment of a method for forming a metal chalcogenide material using vapor deposition. Fig. 8 is a flow chart depicting an embodiment of a method for forming a metal chalcogenide material using vapor deposition. Fig. 9A-9C depict embodiments of metal chalcogenide films and film properties fabricated using vapor deposition. Detailed Description The invention can be implemented in numerous ways, including as a process, an apparatus, a system, a composition of matter, a computer program product embodied on a computer readable storage medium, and/or a processor, such as a processor configured to execute instructions stored on and/or provided by a memory coupled to the processor. In this specification, these implementations, or any other form that the invention may take, may be referred to as techniques. In general, the order of the steps of disclosed processes may be altered within the scope of the invention. Unless otherwise indicated, components such as processors or memories described as being configured to perform a task may be implemented as general-purpose components temporarily configured to perform the task at a given time or as specific components to perform the task. As used herein, the term 'processor' refers to one or more devices, circuits, and/or processing cores configured to process data, such as computer program instructions. The following detailed description of one or more embodiments of the invention is provided in connection with the accompanying drawings that illustrate the principles of the invention. The invention is described in connection with these embodiments, but the invention is not limited to any embodiment. The scope of the invention is limited only by the claims and the invention encompasses numerous alternatives, modifications and equivalents. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention