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CN-121986306-A - Substrate processing method and substrate processing apparatus

CN121986306ACN 121986306 ACN121986306 ACN 121986306ACN-121986306-A

Abstract

The substrate processing method includes a step (a) and a step (b). In the step (a), a substrate having a photoresist film formed on a surface thereof, the photoresist film being a metal oxide-containing photoresist film, is disposed in the chamber. In the step (b), a gas containing silicon is supplied into the chamber to replace the metal constituting the metal oxide contained in the photoresist film with silicon.

Inventors

  • YAMADA KAZUKI
  • Yoneki Takahiro
  • Haruki Takuya
  • Watayaku Masahisa
  • MURAMATSU AKIRA
  • ISHII KATSUTOSHI

Assignees

  • 东京毅力科创株式会社

Dates

Publication Date
20260505
Application Date
20241007
Priority Date
20231019

Claims (10)

  1. 1. A substrate processing method, comprising: a step (a) of disposing a substrate having a photoresist film formed on a surface thereof in a chamber, the photoresist film being a metal oxide-containing photoresist film, and And (b) supplying a gas containing silicon into the chamber to replace the metal constituting the metal oxide contained in the photoresist film with silicon.
  2. 2. The substrate processing method according to claim 1, wherein, The photoresist film is a metal oxide resist film, The substrate processing method further includes a step (c) of performing EUV exposure, which is extreme ultraviolet exposure, on the metal oxide resist film formed on the surface of the substrate before the step (a) and the step (b).
  3. 3. The substrate processing method according to claim 2, wherein, Further comprising a step (d) of developing the metal oxide resist film subjected to EUV exposure after the step (c) and before the step (b).
  4. 4. The substrate processing method according to claim 1, wherein, The metal oxide is any one of Sn, W, te, sb, in, zn, zr, hf.
  5. 5. The substrate processing method according to claim 2, wherein, The metal oxide resist film is a tin oxide film.
  6. 6. The substrate processing method according to claim 3, wherein, The gas comprises a silicon halide and a hydride, In the step (b), a silicon halide and a hydride are brought into contact with a metal oxide contained in the developed metal oxide resist film, and a metal constituting the metal oxide is replaced with silicon.
  7. 7. The substrate processing method according to claim 6, wherein, The silicon halide and the hydride are selected from SiCl 4 、SiH 2 Cl 2 、SiF 4 、SiH 4 、Si 2 H 6 、Si 2 Cl 6 for forming silicon oxide.
  8. 8. The substrate processing method according to claim 1, wherein, In the step (b), the substrate is heated to 50 ℃ or higher, and the gas is supplied into the chamber to replace the metal constituting the metal oxide included in the photoresist film with silicon.
  9. 9. The substrate processing method according to claim 1, wherein, And (c) a step (e) of performing double patterning of the photoresist film after the step (b).
  10. 10. A substrate processing apparatus includes: A chamber; A stage disposed in the chamber and configured to mount a substrate having a photoresist film formed on a surface thereof, the photoresist film being a metal oxide-containing photoresist film, and And a gas supply unit that supplies a gas containing silicon into the chamber.

Description

Substrate processing method and substrate processing apparatus Technical Field Various aspects and embodiments of the present disclosure relate to a substrate processing method and a substrate processing apparatus. Background Patent document 1 below discloses a method for producing a high-silicon steel strip in a continuous production line, which is characterized in that a steel strip is continuously subjected to a siliconizing treatment by a chemical vapor deposition method at a temperature of 1023 ℃ to 1200 ℃ in a non-oxidizing gas atmosphere containing SiCl 4% to 35% in a mol fraction, then a diffusion treatment for diffusing Si into the steel strip substantially uniformly is performed in the non-oxidizing gas atmosphere containing no SiCl 4, and the steel strip is coiled after cooling. Prior art literature Patent literature Patent document 1 Japanese patent laid-open No. 62-227078 Disclosure of Invention Problems to be solved by the invention The present disclosure provides a substrate processing method and a substrate processing apparatus capable of improving the processability of a photoresist film in EUV exposure. Solution for solving the problem The substrate processing method according to one embodiment of the present disclosure includes a step (a) and a step (b). In the step (a), a substrate having a photoresist film formed on a surface thereof, the photoresist film being a metal oxide-containing photoresist film, is disposed in the chamber. In the step (b), a gas containing silicon is supplied into the chamber to replace the metal constituting the metal oxide contained in the photoresist film with silicon. Effects of the invention According to the present disclosure, the workability of the photoresist film in EUV exposure can be improved. Drawings Fig. 1 is a diagram showing an absorption cross section of EUV of an atom. Fig. 2 is a diagram illustrating an example of a substrate according to the embodiment. Fig. 3 is a diagram illustrating an example of a flow of substrate processing for forming a pattern on a substrate. Fig. 4 is a diagram showing an example of a replacement state of a metal oxide resist film of a substrate according to the embodiment. Fig. 5 is a diagram showing an example of a schematic configuration of the substrate processing apparatus according to the embodiment. Fig. 6 is a diagram showing an example of a flow of substrate processing according to the embodiment. Fig. 7 is a diagram illustrating an example of a flow of substrate processing in which double patterning (doublepatterning) of a substrate is performed. Detailed Description Embodiments of a substrate processing method and a substrate processing apparatus according to the present disclosure will be described in detail below with reference to the accompanying drawings. The substrate processing method and the substrate processing apparatus disclosed in the present embodiment are not limited to the above. In the manufacture of semiconductor devices, a pattern is formed on a substrate such as a semiconductor wafer by a photolithography process. In the photolithography step, a photoresist film is formed on the surface of the substrate. Then, in the photolithography step, the formed photoresist film is selectively exposed to light through a mask having a predetermined pattern formed thereon, and a development process is performed, whereby a pattern having a predetermined shape is formed on the photoresist film. Conventionally, a carbon-based photoresist has been used as a photoresist film. For example, conventionally, a chemically amplified resist is used as a photoresist film. In recent years, along with miniaturization of semiconductor devices, miniaturization has also progressed in photolithography. As a method of miniaturization, a reduction in the wavelength of an exposure light source can be exemplified. In recent years, EUV exposure using EUV (Extreme Ultra Violet: extreme ultraviolet) light has been studied. In addition, conventional carbon-based photoresist films have poor EUV absorption and take time to react. Therefore, in EUV exposure, a photoresist film containing a metal oxide is used. For example, in EUV exposure, a metal oxide resist (MOR: metal Oxide Resist) such as tin oxide is used as a photoresist film. Fig. 1 is a diagram showing an absorption cross section of EUV of an atom. The horizontal axis of FIG. 1 indicates the atomic number (atomic number) of each atom. The horizontal axis of fig. 1 is the absorption cross section (atomic absorption cross section) of atoms. The absorption cross section represents the proportion of EUV that is absorbed when passing through an atom. In fig. 1, absorption cross sections of atoms of respective atomic numbers are shown by atomic number. For example, the absorption cross section of atomic number 12 is that of carbon. The absorption cross section of atomic number 50 is that of tin. The absorption cross section of tin EUV is larger than that of carbon EUV. That is,