CN-121986564-A - Method of forming a memory device in recessed features

Abstract

A method of forming a memory device on a substrate includes depositing a first electrode layer within recessed features of the substrate using a first atomic layer deposition process and depositing an amorphous transition metal oxide layer on the first electrode layer using a second atomic layer deposition process at a first substrate temperature. The method further includes depositing a second electrode layer on the amorphous transition metal oxide layer using a third atomic layer deposition process at a second substrate temperature that is lower than a recrystallization temperature of an amorphous transition metal oxide material of the amorphous transition metal oxide layer while maintaining an amorphous state of the amorphous transition metal oxide layer, the first electrode layer, the amorphous transition metal oxide layer, and the second electrode layer forming a storage layer stack.

Inventors

• Dina tejoso
• YONEZAWA RYOTA
• ROBERT CLARKE

Assignees

• 东京毅力科创株式会社

Dates

Publication Date

20260505

Application Date

20240829

Priority Date

20240827

Claims (20)

1. 1. A method of forming a memory device on a substrate, the method comprising: depositing a first electrode layer within the recessed features of the substrate using a first atomic layer deposition process; depositing an amorphous transition metal oxide layer on the first electrode layer using a second atomic layer deposition process at a first substrate temperature, and While maintaining the amorphous state of the amorphous transition metal oxide layer, a second electrode layer is deposited on the amorphous transition metal oxide layer using a third atomic layer deposition process at a second substrate temperature that is lower than a recrystallization temperature of an amorphous transition metal oxide material of the amorphous transition metal oxide layer, the first electrode layer, the amorphous transition metal oxide layer, and the second electrode layer forming a memory layer stack.
2. 2. The method of claim 1, wherein the amorphous transition metal oxide layer comprises hafnium oxide, zirconium oxide, or hafnium zirconium oxide.
3. 3. The method of claim 1, wherein the first electrode layer comprises a transition metal nitride and the second electrode layer comprises a transition metal nitride.
4. 4. The method of claim 1, wherein the first electrode layer and the second electrode layer comprise titanium nitride.
5. 5. The method of claim 1, wherein the first substrate temperature and the second substrate temperature are between 300 ℃ and 350 ℃, and wherein the first substrate temperature is higher than the second substrate temperature.
6. 6. The method of claim 1, wherein the recessed feature has a high aspect ratio of between 40:1 and 10:1.
7. 7. The method of claim 1, wherein the first atomic layer deposition process is a cyclic process, a single cycle of the cyclic process comprising: flowing a first precursor gas to adsorb within the recessed feature; flowing a first purge gas to purge the remaining first precursor gas and precursor reactant; flowing a first reactive gas to react and form a first monolayer within the recessed features, and The first purge gas is flowed to purge the remaining first reactant gas and reactant.
8. 8. The method of claim 1, wherein the second atomic layer deposition process is performed at the first substrate temperature and is a cyclical process, a single cycle of the cyclical process comprising: Flowing a second precursor gas to adsorb within the recessed feature; flowing a second purge gas to purge the remaining second precursor gas and precursor reactant; flowing a second reactant gas to react and form a second monolayer within the recessed features, and The second purge gas is flowed to purge the remaining second reactant gas and reactant.
9. 9. The method of claim 1, wherein the third atomic layer deposition process is performed at the second substrate temperature and is a cyclical process, a single cycle of the cyclical process comprising: Flowing a third precursor gas to adsorb within the recessed feature; Flowing a third purge gas to purge the remaining third precursor gas and precursor reactant; flowing a third reactant gas to react and form a third monolayer within the recessed features, and The third purge gas is flowed to purge the remaining third reactant gas and reactant.
10. 10. The method of claim 1, further comprising: annealing the memory layer stack at a third substrate temperature to crystallize the amorphous transition metal oxide layer and form a crystallized transition metal oxide layer, the third substrate temperature being higher than the second substrate temperature.
11. 11. The method of claim 10, wherein the first electrode layer, the crystalline transition metal oxide layer, and the second electrode layer form a storage capacitor.
12. 12. The method of claim 10, wherein the crystalline transition metal oxide layer comprises a ferroelectric or antiferroelectric crystalline phase.
13. 13. The method of claim 10, wherein the second electrode layer comprises 18 to 22 atomic percent oxygen.
14. 14. A method of forming a memory device on a substrate, the method comprising: Loading the substrate into a first Atomic Layer Deposition (ALD) chamber of an ALD system; Performing a first ALD process, the first ALD process comprising flowing a first metal precursor gas to deposit a first electrode layer within a high aspect ratio opening of the substrate; Loading the substrate into a second ALD chamber of the ALD system; performing a second ALD process, the second ALD process comprising flowing a gas mixture comprising tetrakis (ethylmethylamino) hafnium (TEMAHf), tetrakis (ethylmethylamino) zirconium (TEMAZr), and an oxidant to deposit an amorphous transition metal oxide layer on the first electrode layer; Loading the substrate into a third Atomic Layer Deposition (ALD) chamber of the ALD system and maintaining the substrate at a temperature below an amorphous-crystalline transition temperature of the amorphous transition metal oxide layer, and While maintaining the substrate at the temperature, a third ALD process is performed, the third ALD process comprising flowing a second metal precursor gas to deposit a second electrode layer, the first electrode layer, the amorphous transition metal oxide layer, and the second electrode layer forming a memory layer stack.
15. 15. The method of claim 14, wherein flowing the gas mixture in the second ALD process comprises flowing the TEMAHf and the TEMAZr first, followed by flowing the oxidants.
16. 16. The method of claim 14, further comprising: annealing the memory layer stack at a substrate temperature to crystallize the amorphous transition metal oxide layer and form a crystallized transition metal oxide layer, the crystallized transition metal oxide layer having a ferroelectric or antiferroelectric crystalline phase, the substrate temperature being above an amorphous-crystalline transition temperature of the amorphous transition metal oxide layer, and wherein, after the annealing, the second electrode layer comprises 18 to 22 atomic percent oxygen.
17. 17. A method of forming a memory device on a substrate, the method comprising: depositing a first electrode layer within the recessed features of the substrate using a first atomic layer deposition process; Depositing an amorphous transition metal oxide layer on the first electrode layer using a second atomic layer deposition process at a first substrate temperature; Depositing a second electrode layer on the amorphous transition metal oxide layer using a third atomic layer deposition process at a second substrate temperature, and Annealing the substrate at a third substrate temperature to crystallize the amorphous transition metal oxide layer and form a crystallized transition metal oxide layer having a ferroelectric or antiferroelectric crystalline phase.
18. 18. The method of claim 17, wherein the annealing diffuses oxygen from the amorphous transition metal oxide layer into the second electrode layer such that the second electrode layer comprises 18 to 22 atomic percent oxygen.
19. 19. The method of claim 17, wherein the first substrate temperature and the second substrate temperature are between 300 ℃ and 350 ℃.
20. 20. The method of claim 17, wherein the first electrode layer comprises titanium nitride, the amorphous transition metal oxide layer comprises hafnium zirconium oxide, the second electrode layer comprises titanium nitride, and the crystalline transition metal oxide layer comprises crystalline hafnium zirconium oxide.

Description

Method of forming a memory device in recessed features Cross Reference to Related Applications The present application claims the benefit of U.S. provisional application No. 63/546,141 filed on day 27 of 10 in 2023 and U.S. non-provisional application No. 18/816,978 filed on day 27 of 8 in 2024, which are hereby incorporated by reference. Technical Field The present invention relates to semiconductor processing and semiconductor devices, and more particularly, to a method of forming a memory device in recessed features. Background In the semiconductor industry, integration of non-volatile memory technology, sensor technology, transmitter technology, electronic filter technology, receiver technology, etc. may be useful for various types of devices and applications. According to aspects, an electronic device (e.g., a non-volatile memory) may be integrated on a chip. The need for film stacks comprising Ferroelectric (FE) and Antiferroelectric (AFE) dielectric materials includes achieving good control of the crystalline phase in advanced 3D structures. Disclosure of Invention A method of forming a memory device on a substrate, according to an embodiment of the present disclosure, includes depositing a first electrode layer within recessed features of the substrate using a first atomic layer deposition process, and depositing an amorphous transition metal oxide layer on the first electrode layer using a second atomic layer deposition process at a first substrate temperature. The method further includes depositing a second electrode layer on the amorphous transition metal oxide layer using a third atomic layer deposition process at a second substrate temperature that is lower than a recrystallization temperature of an amorphous transition metal oxide material of the amorphous transition metal oxide layer while maintaining an amorphous state of the amorphous transition metal oxide layer, the first electrode layer, the amorphous transition metal oxide layer, and the second electrode layer forming a storage layer stack. In accordance with another embodiment of the present disclosure, a method of forming a memory device on a substrate includes loading the substrate into a first Atomic Layer Deposition (ALD) chamber of an ALD system, and performing a first ALD process that includes flowing a first metal precursor gas to deposit a first electrode layer within a high aspect ratio opening of the substrate. The method further includes loading the substrate into a second ALD chamber of the ALD system, and performing a second ALD process including flowing a gas mixture including tetrakis (ethylmethylamino) hafnium (TEMAHf), tetrakis (ethylmethylamino) zirconium (TEMAZr), and an oxidant to deposit an amorphous transition metal oxide layer on the first electrode layer. The method further includes loading the substrate into a third Atomic Layer Deposition (ALD) chamber of the ALD system and maintaining the substrate at a temperature below an amorphous-crystalline transition temperature of the amorphous transition metal oxide layer, and while maintaining the substrate at the temperature, performing a third ALD process that includes flowing a second metal precursor gas to deposit a second electrode layer, the first electrode layer, the amorphous transition metal oxide layer, and the second electrode layer forming a storage layer stack. In accordance with yet another embodiment of the present disclosure, a method of forming a memory device on a substrate includes depositing a first electrode layer within recessed features of the substrate using a first atomic layer deposition process and depositing an amorphous transition metal oxide layer on the first electrode layer using a second atomic layer deposition process at a first substrate temperature. The method further includes depositing a second electrode layer on the amorphous transition metal oxide layer using a third atomic layer deposition process at a second substrate temperature. The method further includes annealing the substrate at a third substrate temperature to crystallize the amorphous transition metal oxide layer and form a crystallized transition metal oxide layer having a ferroelectric or antiferroelectric crystalline phase. Drawings For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which: FIGS. 1A-1D are cross-sectional views of structures illustrating various steps of a method of forming a memory device in high aspect ratio features, in accordance with embodiments of the present disclosure; FIG. 2 is a cross-sectional view of a structure illustrating an annealing step, according to an embodiment of the present disclosure; FIG. 3 is a schematic diagram of an Atomic Layer Deposition (ALD) system according to an embodiment of the present disclosure; FIG. 4 is a graph illustrating X-ray diffraction (XRD) results of a Hafnium