CN-121986568-A - Semiconductor device and electronic apparatus

Abstract

The semiconductor device includes an island-shaped semiconductor portion, a transistor having at least one of a source region and a drain region formed in the semiconductor portion, and a contactor connected to the at least one of the source region and the drain region, wherein the contactor includes a contact surface that contacts the at least one of the source region and the drain region and extends downward.

Inventors

• IRIGUCHI TAKUYA
• Shan Zhiliangjie
• Ban Zhishu
• KAMO TAKASHI

Assignees

• 索尼半导体解决方案公司

Dates

Publication Date

20260505

Application Date

20240821

Priority Date

20231117

Claims (20)

1. 1. A semiconductor device, comprising: An island-shaped semiconductor portion; A transistor including at least one of a source region and a drain region formed in the semiconductor portion, and A contactor connected to the at least one of the source region and the drain region, wherein, The contactor includes a contact surface contacting the at least one of the source region and the drain region and extending downward.
2. 2. The semiconductor device according to claim 1, wherein, The contactor includes: a first contact connected to the source region, an A second contactor connected to the drain region.
3. 3. The semiconductor device according to claim 1, wherein, The at least one of the source region and the drain region includes a side surface exposed on a surface of the semiconductor portion, and The contact face of the contactor is in contact with the side face of the at least one of the source region and the drain region.
4. 4. The semiconductor device according to claim 1, wherein, The semiconductor section includes: A first semiconductor portion, and A second semiconductor portion provided to be spaced apart from the first semiconductor portion, The at least one of the source region and the drain region is formed in each of the first semiconductor portion and the second semiconductor portion, and The contact face of the contactor is in contact with the at least one of the source region and the drain region formed in each of the first semiconductor portion and the second semiconductor portion.
5. 5. The semiconductor device according to claim 1, wherein, The at least one of the source region and the drain region includes a top surface and a side surface exposed on a surface of the semiconductor portion, The contactor includes: A contact portion in contact with the top surface and the side surface of the at least one of the source region and the drain region, and A lead-out portion extending upward from the contact portion The area of the lead-out portion is smaller than the area of the contact portion in a plan view.
6. 6. The semiconductor device according to claim 5, wherein an area of the lead-out portion is smaller than a sum of an area of the top surface and an area of the side surface of the at least one of the source region and the drain region, which are in contact with the contact portion.
7. 7. The semiconductor device according to claim 1, wherein, The semiconductor portion includes a low-concentration impurity region having an impurity concentration lower than that of the at least one of the source region and the drain region on an underside of the at least one of the source region and the drain region, and The contact surface of the contactor is in contact with the low-concentration impurity region and the at least one of the source region and the drain region.
8. 8. The semiconductor device according to claim 7, wherein an impurity concentration of the drain region is lower than an impurity concentration of the source region and higher than an impurity concentration of the low-concentration impurity region.
9. 9. The semiconductor device according to claim 1, wherein, The transistor includes: a transistor having at least one of a source region and a drain region connected to a first type of contact, and At least one of the source region and the drain region of which is connected to a transistor of a second type of contact, The contactor is of the second type, The semiconductor device further includes the first type of contactor, The first type of contact includes a contact surface that contacts the at least one of the source region and the drain region, an The contact surface of the first type of contactor does not extend downwardly or extends downwardly by a length that is shorter than the downwardly extending length of the contact surface of the second type of contactor.
10. 10. The semiconductor device of claim 9, wherein the contact face of the first type of contact does not extend downward and is in contact with only a top surface of the at least one of the source region and the drain region.
11. 11. The semiconductor device according to claim 9, wherein, The semiconductor portion includes a low-concentration impurity region having an impurity concentration lower than that of the at least one of the source region and the drain region on a lower side of the at least one of the source region and the drain region, The contact surface of the first-type contactor extends downward so as not to contact the low-concentration impurity region, and The contact surface of the second type contactor extends downward to be in contact with the low concentration impurity region.
12. 12. The semiconductor device according to claim 10, further comprising: A photoelectric conversion element; A floating diffusion portion; A transfer transistor connected between the photoelectric conversion element and the floating diffusion; At least one of a reset transistor and a conversion efficiency switching transistor connected between the floating diffusion and a power supply line; an amplifying transistor configured to output a voltage corresponding to the charge accumulated in the floating diffusion, and A selection transistor connected between the amplifying transistor and the signal line, wherein, At least one of the source region and the drain region of the at least one of the conversion efficiency switching transistor and the reset transistor is connected with the first type contactor, and At least one of the source region and the drain region of at least the selection transistor among the amplification transistor and the selection transistor is connected with the second type contactor.
13. 13. The semiconductor device according to claim 12, wherein the source region of the at least one of the conversion efficiency switching transistor and the reset transistor is connected to the first type contactor.
14. 14. The semiconductor device of claim 12, simultaneously comprising: the conversion efficiency switching transistor and the reset transistor, wherein, The source region of the conversion efficiency switching transistor is connected with the first type contactor.
15. 15. The semiconductor device according to claim 12, further comprising: A first semiconductor substrate, and A second semiconductor substrate, wherein, The photoelectric conversion element, the floating diffusion, and the transfer transistor are provided on the first semiconductor substrate, The at least one of the conversion efficiency switching transistor and the reset transistor, the amplifying transistor, and the selection transistor are disposed on the second semiconductor substrate.
16. 16. The semiconductor device according to claim 1, wherein, The contactor includes: a first contact portion extending from a wiring in the wiring layer to the at least one of the source region and the drain region, and A second contact including the contact surface contacting the at least one of the source region and the drain region and extending downward.
17. 17. The semiconductor device according to claim 16, wherein the contact surface of the second contact portion is in contact with not only the at least one of the source region and the drain region but also a portion of the semiconductor portion located on an underside of the at least one of the source region and the drain region.
18. 18. The semiconductor device according to claim 16, wherein the first contact portion and the second contact portion are continuous with each other in a vertical direction.
19. 19. The semiconductor device of claim 16, wherein, The second contact portion extends from the wiring in the wiring layer in a manner separate from the first contact portion, and The first contact portion and the second contact portion are spaced apart from each other in a plan view.
20. 20. An electronic device, comprising: A semiconductor device, wherein, The semiconductor device includes: An island-shaped semiconductor portion; A transistor including at least one of a source region and a drain region formed in the semiconductor portion, and A contactor connected to the at least one of the source region and the drain region, wherein, The contactor includes a contact surface contacting the at least one of the source region and the drain region and extending downward.

Description

Semiconductor device and electronic apparatus Technical Field The present disclosure relates to a semiconductor device and an electronic apparatus. Background For example, as disclosed in patent document 1, a field effect transistor formed in a semiconductor portion provided in an island shape is a known type of transistor. Such a transistor is also called a fin-type transistor (fin-type transistor). CITATION LIST Patent literature Patent document 1 JP 2021-34435A Disclosure of Invention Technical problem There is still room for improvement in the performance of fin transistors. It is an object of one aspect of the present disclosure to achieve improved fin transistor performance. Solution to the problem A semiconductor device according to one aspect of the present disclosure includes an island-shaped semiconductor portion, a transistor including at least one of a source region and a drain region formed in the semiconductor portion, and a contactor connected to the at least one of the source region and the drain region, wherein the contactor includes a contact surface that contacts the at least one of the source region and the drain region and extends downward. An electronic device according to one aspect of the present disclosure includes a semiconductor device, wherein the semiconductor device includes an island-shaped semiconductor portion, a transistor including at least one of a source region and a drain region formed in the semiconductor portion, and a contactor connected to the at least one of the source region and the drain region, wherein the contactor includes a contact surface that contacts and extends downward from the at least one of the source region and the drain region. Drawings Fig. 1 is a diagram showing a schematic configuration example of a semiconductor device 100. Fig. 2 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 3 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 4 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 5 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 6 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 7 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 8 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 9 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 10 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 11 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 12 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 13 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 14 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 15 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 16 is a diagram showing a schematic configuration example of the semiconductor device 100. Fig. 17 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 18 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 19 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 20 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 21 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 22 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 23 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 24 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 25 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 26 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 27 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 28 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 29 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 30 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 31 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 32 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 33 is a diagram showing an example of a manufacturing method of the semiconductor device 100. Fig. 34 is a diagram showing an example of a manufacturing method of