CN-121986572-A - Light detection device, electronic apparatus, and method of manufacturing light detection device

CN121986572ACN 121986572 ACN121986572 ACN 121986572ACN-121986572-A

Abstract

A light detection device capable of reducing the chip area is provided. The light detecting device includes a semiconductor layer, a wiring layer, a terminal pad, and an element. The semiconductor layer includes a photoelectric conversion unit, and one surface is a light incident surface and the other surface is an element forming surface. The wiring layer is laminated on the element forming surface of the semiconductor layer. The terminal pad is at least partially located within the semiconductor layer and is connected to the metal wiring of the wiring layer. The element is arranged between the terminal pad and the wiring layer.

Inventors

YAGI TAKUMI
SATO KAZUKI
YAMADA HIROYUKI
Nene Xiongtai
Shinya Tatsuya
FUJITA TAKASHI
TSUMAGARI KENICHIRO
ARAI YASUO
Usami takari

Assignees

索尼半导体解决方案公司

Dates

Publication Date: 20260505
Application Date: 20240731
Priority Date: 20230922

Claims (19)

1. A light detection device, comprising: A semiconductor layer including a photoelectric conversion unit, one surface of the semiconductor layer being a light incident surface, and the other surface of the semiconductor layer being an element forming surface; a wiring layer laminated on the element forming surface of the semiconductor layer; A terminal pad at least partially located in the semiconductor layer and connected to a metal wiring of the wiring layer; an element disposed between the terminal pad and the wiring layer.
2. The light detection device according to claim 1, wherein the element is a protection diode for protecting other elements arranged in the semiconductor layer.
3. The light detection device according to claim 1, wherein the semiconductor layer is used in a back-illuminated light detection device, the element formation face of the back-illuminated light detection device is a front face, and the light incidence face of the back-illuminated light detection device is a back face.
4. The light detection device according to claim 1, wherein the terminal pad is located on the element formation face side of the light incidence face of the semiconductor layer.
5. The light detection device according to claim 1, wherein a plurality of the wiring layers are laminated together.
6. The light detection device of claim 5, wherein the plurality of wiring layers comprises: a first wiring layer laminated on the element forming surface of the semiconductor layer, and A second wiring layer laminated on a surface of the first wiring layer opposite to the surface on the semiconductor layer side The second wiring layer includes a substrate on which a logic circuit is formed.
7. The light detection device of claim 5, wherein the plurality of wiring layers comprises: A first wiring layer laminated on an element formation surface of the semiconductor layer; a second wiring layer laminated on a surface of the first wiring layer on a side opposite to the surface on the semiconductor layer side, and A third wiring layer laminated on a surface of the second wiring layer on a side opposite to the surface on the first wiring layer side, and The second wiring layer includes a first substrate on which a first logic circuit is formed, and the third wiring layer includes a second substrate on which a second logic circuit is formed.
8. A light detection device, comprising: A semiconductor layer including a photoelectric conversion unit, one surface of the semiconductor layer being a light incident surface, and the other surface of the semiconductor layer being an element forming surface; a wiring layer laminated on the element forming surface of the semiconductor layer; A terminal pad located on the wiring layer side of the element forming surface of the semiconductor layer and connected to a metal wiring of the wiring layer, and A pad opening formed from the light incident surface of the semiconductor layer to the terminal pad and exposing the terminal pad from the light incident surface, wherein, Before the formation of the pad opening, a component is arranged at a formation position of the pad opening.
9. The light detection device according to claim 8, wherein the element is a protection diode for protecting other elements provided in the semiconductor layer.
10. The light detection device according to claim 8, wherein the semiconductor layer is used in a back-illuminated light detection device, the element formation face of the back-illuminated light detection device is a front face, and the light incidence face of the back-illuminated light detection device is a back face.
11. The light detection device according to claim 8, wherein a plurality of the wiring layers are stacked together.
12. The light detection device of claim 11, wherein the plurality of wiring layers comprises: a first wiring layer laminated on the element forming surface of the semiconductor layer, and A second wiring layer laminated on a surface of the first wiring layer opposite to the surface on the semiconductor layer side The second wiring layer includes a substrate on which a logic circuit is formed.
13. The light detection device of claim 12, wherein the terminal pad is located in the second wiring layer.
14. The light detection device of claim 11, wherein the plurality of wiring layers comprises: A first wiring layer laminated on an element formation surface of the semiconductor layer; a second wiring layer laminated on a surface of the first wiring layer on a side opposite to the surface on the semiconductor layer side, and A third wiring layer laminated on a surface of the second wiring layer opposite to the surface on the first wiring layer side The second wiring layer includes a first substrate on which a first logic circuit is formed, and the third wiring layer includes a second substrate on which a second logic circuit is formed.
15. The light detection device of claim 14, wherein the terminal pad is located in the second wiring layer.
16. An electronic device comprising a light detection arrangement, the light detection arrangement comprising: A semiconductor layer including a photoelectric conversion unit, one surface of the semiconductor layer being a light incident surface, and the other surface of the semiconductor layer being an element forming surface; a wiring layer laminated on the element forming surface of the semiconductor layer; A terminal pad at least partially located in the semiconductor layer and connected to a metal wiring of the wiring layer; an element disposed between the terminal pad and the wiring layer.
17. An electronic device comprising a light detection arrangement, the light detection arrangement comprising: A semiconductor layer including a photoelectric conversion unit, one surface of the semiconductor layer being a light incident surface, and the other surface of the semiconductor layer being an element forming surface; a wiring layer laminated on the element forming surface of the semiconductor layer; a terminal pad which is located on the wiring layer side of the element formation surface of the semiconductor layer and is connected to a metal wiring of the wiring layer; a pad opening formed from the light incident surface of the semiconductor layer to the terminal pad and exposing the terminal pad from the light incident surface, wherein, Before the formation of the pad opening, a component is arranged at a formation position of the pad opening.
18. A method for manufacturing a light detection device, comprising: Preparing a semiconductor chip in which a wiring layer is laminated on an element forming surface of a semiconductor layer including a photoelectric conversion unit, one surface of the semiconductor layer being a light incident surface, and the other surface of the semiconductor layer being the element forming surface; Forming a terminal pad in the semiconductor layer, the upper surface of the terminal pad being exposed to the outside, and The lower surface of the terminal pad and the metal wiring of the wiring layer are connected by a via hole such that an element arranged in the semiconductor layer is located between the lower surface of the terminal pad and the wiring layer.
19. A method for manufacturing a light detection device, comprising: Preparing a semiconductor chip including a photoelectric conversion unit and a wiring layer laminated on an element forming surface of a semiconductor layer, one surface of the semiconductor layer being a light incident surface and the other surface of the semiconductor layer being the element forming surface; Forming a terminal pad connected to a metal wiring of the wiring layer on the wiring layer side of the element forming surface of the semiconductor layer; forming a pad opening reaching the terminal pad from the light incident surface of the semiconductor layer and exposing the terminal pad from the light incident surface, and Before forming the pad opening, a component is arranged at a forming position of the pad opening.

Description

Light detection device, electronic apparatus, and method of manufacturing light detection device Technical Field The technology according to the present disclosure (the present technology) relates to a light detection device, an electronic apparatus including the light detection device, and a method for manufacturing the light detection device. Background In the solid-state imaging device, a certain number of protection elements are generally arranged on a chip in a manner corresponding to each terminal pad for protecting the semiconductor element from electrostatic discharge (electrostatic discharge, ESD), process-induced damage (process induced damage, PID), and the like. Patent document 1 discloses a structure in which an emitter region of a protection transistor is electrically connected below a terminal pad. List of references Patent literature Patent document 1 Japanese patent application laid-open No. 10-335627 Disclosure of Invention Problems to be solved by the invention In the solid-state imaging device, it is desirable to reduce the chip size. However, since a certain number of protection elements are required in the chip, the chip area increases. The present disclosure has been made in view of the above circumstances, and an object thereof is to provide a light detection device capable of reducing a chip area, an electronic apparatus, and a method for manufacturing the light detection device. Problem solution One aspect of the present disclosure is a light detection device including a semiconductor layer including a photoelectric conversion unit, one surface of the semiconductor layer being a light incident surface and the other surface of the semiconductor layer being an element forming surface, a wiring layer laminated on the element forming surface of the semiconductor layer, a terminal pad at least partially located in the semiconductor layer and connected to a metal wiring of the wiring layer, and an element arranged between the terminal pad and the wiring layer. Another aspect of the present disclosure is a light detection device including a semiconductor layer including a photoelectric conversion unit, one surface of the semiconductor layer being a light incidence surface and the other surface of the semiconductor layer being an element formation surface, a wiring layer laminated on the element formation surface of the semiconductor layer, a terminal pad located on the wiring layer side of the element formation surface of the semiconductor layer and connected to a metal wiring of the wiring layer, and a pad opening formed from the light incidence surface of the semiconductor layer to the terminal pad and exposing the terminal pad from the light incidence surface, wherein an element is arranged at a formation position of the pad opening before the pad opening is formed. Further, another aspect of the present disclosure is an electronic apparatus including a light detection device including a semiconductor layer including a photoelectric conversion unit, one surface of the semiconductor layer being a light incident surface and the other surface of the semiconductor layer being an element forming surface, a wiring layer laminated on the element forming surface of the semiconductor layer, a terminal pad at least partially located in the semiconductor layer and connected to a metal wiring of the wiring layer, and an element arranged between the terminal pad and the wiring layer. Further, another aspect of the present disclosure is an electronic apparatus including a light detection device including a semiconductor layer including a photoelectric conversion unit, one surface of the semiconductor layer being a light incidence surface and the other surface of the semiconductor layer being an element formation surface, a wiring layer laminated on the element formation surface of the semiconductor layer, a terminal pad located on the wiring layer side of the element formation surface of the semiconductor layer and connected to a metal wiring of the wiring layer, and a pad opening formed from the light incidence surface of the semiconductor layer to the terminal pad and exposing the terminal pad from the light incidence surface, wherein an element is arranged at a formation position of the pad opening before the pad opening is formed. Further, another aspect of the present disclosure is a method for manufacturing a light detection device, including preparing a semiconductor chip in which a wiring layer is laminated on an element forming face of a semiconductor layer including a photoelectric conversion unit, one surface of the semiconductor layer being a light incident face and the other surface of the semiconductor layer being the element forming face, forming a terminal pad in the semiconductor layer, an upper surface of the terminal pad being exposed to the outside, and connecting a lower surface of the terminal pad and a metal wiring of the wiring layer through a via hole such that an element ar