CN-121986577-A - Light-emitting device, manufacturing method thereof and display device

Abstract

A light emitting device and a manufacturing method thereof, and a display device, wherein the light emitting device comprises a substrate (1), a first electrode (2), a first carrier transmission layer (3), a light emitting layer (4), a second carrier transmission layer (5) and a second electrode (6) which are stacked on the substrate (1), the first electrode (2) comprises a plurality of first through holes (H1) which are arranged at intervals, the light emitting device further comprises a gate electrode (7) which is arranged in the first through holes (H1) and one end of which at least extends into the first carrier transmission layer (3), and a first insulating layer (81) which is arranged between at least part of the side wall of the gate electrode (7) and the side wall of the first through holes (H1) and covers part of the surface of each gate electrode (7), wherein the first insulating layer (81) is configured to insulate the gate electrode (7) from the first electrode (2), the first insulating layer (81) is further configured to insulate the gate electrode (7) from the first carrier transmission layer (3), the gate electrode (7) is configured to be at least arranged at least in an insulating manner, and the gate electrode (7) is configured to be loaded with a preset light emitting voltage on the first electrode (6) when the preset light emitting device is configured to be loaded with a small working voltage.

Inventors

• DANG WENHUI

Assignees

• 京东方科技集团股份有限公司
• 北京京东方技术开发有限公司

Dates

Publication Date

20260505

Application Date

20240829

Claims (20)

1. A light emitting device comprises a substrate, a first electrode, a first carrier transmission layer, a light emitting layer, a second carrier transmission layer and a second electrode, wherein the first electrode, the first carrier transmission layer, the light emitting layer, the second carrier transmission layer and the second electrode are stacked on the substrate; the light emitting device further comprises a gate electrode which is positioned in the first through hole and one end of which extends at least into the first carrier transmission layer, and a first insulating layer which is positioned between at least part of the side wall of the gate electrode and the side wall of the first through hole and covers part of the surface of each gate electrode, wherein the first insulating layer is configured to insulate the gate electrode from the first electrode, the first insulating layer is also configured to insulate at least the gate electrode from the first carrier transmission layer, and the gate electrode is configured to load a preset voltage when the light emitting device works, and the preset voltage is smaller than the voltage loaded on the first electrode and smaller than the voltage loaded on the second electrode.
2. The light emitting device of claim 1, wherein the first insulating layer conformally encapsulates at least a portion of the surface of the gate electrode.
3. The light emitting device of claim 2, further comprising a second insulating layer between the first electrode and the substrate base plate, the first insulating layer and the second insulating layer being of unitary construction.
4. A light emitting device according to claim 3, wherein one end of the gate electrode extends into the first carrier transport layer.
5. The light-emitting device according to claim 4, wherein an overall structure of the gate electrode and the first insulating layer is a first structure, and a thickness of the first structure within the first carrier transport layer is smaller than a thickness of the first carrier transport layer.
6. The light emitting device of claim 5, wherein the first structure is located within the first carrier transport layer at a thickness greater than half the thickness of the first carrier transport layer.
7. A light emitting device according to claim 3, wherein one end of the gate electrode extends into the second carrier transport layer.
8. The light-emitting device according to claim 7, wherein an overall structure of the gate electrode and the first insulating layer is a first structure, and a thickness of the first structure within the second carrier transport layer is smaller than a thickness of the second carrier transport layer.
9. The light emitting device of claim 8, wherein the first structure is located within the second carrier transport layer at a thickness greater than half a thickness of the second carrier transport layer.
10. The light-emitting device according to any one of claims 3 to 9, further comprising a buffer layer between the substrate and the second insulating layer, and a conductive connection layer between the substrate and the buffer layer; The buffer layer comprises second through holes which are in one-to-one correspondence with the first through holes, and the other end of each gate electrode extends to be electrically connected with the conductive connecting layer through the second through holes.
11. The light emitting device of claim 10, wherein an orthographic shape of the second via on the substrate is the same as an orthographic shape of the first via on the substrate.
12. The light-emitting device of any of claims 1-11, wherein an orthographic projection shape of the first via on the substrate base plate is a circle or a square.
13. The light emitting device of claim 12, wherein a plurality of the first vias are distributed in an array.
14. The light-emitting device of any one of claims 1-11, wherein an orthographic projection shape of the first via on the substrate base plate is a stripe shape.
15. The light emitting device of claim 14, wherein an extension direction of the first via is a first direction, and the plurality of first vias are sequentially arranged at equal intervals along a second direction, the second direction being perpendicular to the first direction.
16. The light-emitting device of any one of claims 1-15, wherein the first electrode is an anode, the second electrode is a cathode, the first carrier transport layer is a hole transport layer, and the second carrier transport layer is an electron transport layer; the light emitting device further includes a hole injection layer between the first electrode and the first carrier transport layer, an orthographic projection of the hole injection layer on the substrate does not overlap with an orthographic projection of the first via on the substrate.
17. The light-emitting device of any one of claims 1-16, wherein the first electrode is a cathode, the second electrode is an anode, the first carrier transport layer is an electron transport layer, and the second carrier transport layer is a hole transport layer; the light emitting device further includes a hole injection layer between the second electrode and the second carrier transport layer.
18. A light emitting device according to claim 16 or 17 wherein the material of the hole transport layer comprises a cross-linked network structure.
19. A display apparatus comprising the light-emitting device according to any one of claims 1 to 18.
20. A method of manufacturing a light emitting device for manufacturing a light emitting device according to any one of claims 1 to 18, wherein the method of manufacturing comprises: Forming a plurality of gate electrodes arranged at intervals on one side of a substrate; Forming a first insulating layer covering the surface of each gate electrode portion; Forming a first electrode between the first insulating layers between the gate electrodes, the first electrode including a plurality of first through holes for embedding the gate electrodes and the corresponding first insulating layers; Forming a first carrier transmission layer on one side of the first electrode, which is away from the substrate, and extending one end of the gate electrode, which is away from the substrate, at least into the first carrier transmission layer; Forming a light-emitting layer on one side of the first carrier transport layer away from the substrate base plate; Forming a second carrier transport layer on one side of the light-emitting layer away from the substrate base plate; and forming a second electrode on one side of the second carrier transport layer away from the substrate base plate.

Description

Light-emitting device, manufacturing method thereof and display device Technical Field The disclosure relates to the technical field of display, in particular to a light emitting device, a manufacturing method thereof and a display device. Background The Quantum Dot (QD) is an excellent nano luminescent material, and has the advantages of high Quantum yield, narrow luminescence peak, adjustable luminescence spectrum, high photochemical stability and the like. Therefore, a new generation of light emitting devices using QDs as light emitting layers, a Quantum LIGHT EMITTING Diode (QLED) has advantages of self-luminescence, low power consumption, high color gamut, and the like, and has been widely paid attention to in academia and industry. Currently, the problem of low luminous efficiency of QLED devices generally occurs, and one of the important factors is that the transmission of holes and electrons in the light emitting device is unbalanced. Therefore, how to improve the balance of electron-hole transport in a light emitting device is a problem to be solved in the art. Disclosure of Invention The embodiment of the disclosure provides a light emitting device, a manufacturing method thereof and a display device, and the specific scheme is as follows: The embodiment of the disclosure provides a light emitting device, which comprises a substrate, a first electrode, a first carrier transmission layer, a light emitting layer, a second carrier transmission layer and a second electrode, wherein the first electrode, the first carrier transmission layer, the light emitting layer, the second carrier transmission layer and the second electrode are stacked on the substrate; the light emitting device further comprises a gate electrode which is positioned in the first through hole and one end of which extends at least into the first carrier transmission layer, and a first insulating layer which is positioned between at least part of the side wall of the gate electrode and the side wall of the first through hole and covers part of the surface of each gate electrode, wherein the first insulating layer is configured to insulate the gate electrode from the first electrode, the first insulating layer is also configured to insulate at least the gate electrode from the first carrier transmission layer, and the gate electrode is configured to load a preset voltage when the light emitting device works, and the preset voltage is smaller than the voltage loaded on the first electrode and smaller than the voltage loaded on the second electrode. In one possible implementation manner, in the light emitting device provided in the embodiment of the present disclosure, the first insulating layer wraps at least part of a surface of the gate electrode in a conformal manner. In a possible implementation manner, in the light emitting device provided in the embodiment of the present disclosure, a second insulating layer is further included between the first electrode and the substrate, and the first insulating layer and the second insulating layer are in a unitary structure. In one possible implementation manner, in the light emitting device provided in the embodiment of the present disclosure, one end of the gate electrode extends into the first carrier transport layer. In a possible implementation manner, in the light emitting device provided in the embodiment of the present disclosure, an overall structure of the gate electrode and the first insulating layer is a first structure, and a thickness of the first structure in the first carrier transport layer is smaller than a thickness of the first carrier transport layer. In a possible implementation manner, in the light emitting device provided in the embodiment of the present disclosure, a thickness of the first structure in the first carrier transport layer is greater than half a thickness of the first carrier transport layer. In a possible implementation manner, in the light emitting device provided in the embodiment of the present disclosure, one end of the gate electrode extends into the second carrier transport layer. In a possible implementation manner, in the light emitting device provided in the embodiment of the present disclosure, an overall structure of the gate electrode and the first insulating layer is a first structure, and a thickness of the first structure in the second carrier transport layer is smaller than a thickness of the second carrier transport layer. In a possible implementation manner, in the light emitting device provided in the embodiment of the present disclosure, a thickness of the first structure in the second carrier transport layer is greater than half a thickness of the second carrier transport layer. In one possible implementation manner, the light emitting device provided in the embodiment of the disclosure further comprises a buffer layer located between the substrate and the second insulating layer, and a conductive connection layer located between the