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CN-121986584-A - Supercritical substrate cleaning device and supercritical substrate cleaning method using same

CN121986584ACN 121986584 ACN121986584 ACN 121986584ACN-121986584-A

Abstract

An embodiment of the present invention provides a supercritical substrate cleaning apparatus including a chamber section having a housing space formed therein, and a block section provided in the housing space and having a pair of upper and lower blocks spaced apart from each other, the block section supporting a substrate disposed between the upper and lower blocks, the first fluid supplied to the housing space through a first fluid supply port connected to the chamber section being discharged through a first fluid discharge port connected to the chamber section in a state of surrounding the block section along a first fluid movement path, the second fluid supplied to the substrate through the block section being moved in a state of surrounding the substrate along a second fluid movement path, and the first fluid and the second fluid being fluids including supercritical carbon dioxide.

Inventors

  • Ju Jiaoxu

Assignees

  • 克赛米有限公司

Dates

Publication Date
20260505
Application Date
20241008
Priority Date
20231013

Claims (9)

  1. 1. A supercritical substrate cleaning apparatus, comprising: A chamber part forming a receiving space therein, and A block portion provided in the housing space, having a pair of upper and lower blocks spaced apart from each other, and supporting a substrate disposed between the upper and lower blocks, The first fluid supplied to the housing space through the first fluid supply port connected to the chamber portion is discharged through the first fluid discharge port connected to the chamber portion in a state of surrounding the block portion along the first fluid moving path, The second fluid supplied to the substrate through the block moves along a second fluid movement path so as to surround the substrate, and the substrate is dried and cleaned, and the first fluid and the second fluid are fluids containing supercritical carbon dioxide.
  2. 2. The supercritical substrate cleaning apparatus according to claim 1, wherein, Supplying a second fluid to an upper face of a center of the substrate through a second fluid supply port connected to the center of the upper block, The second fluid supplied to the center of the upper surface of the substrate is guided along the lower surface of the substrate to face the center of the substrate after moving to the edge of the substrate, and is then discharged to the outside through a second fluid discharge port connected to the center of the lower block.
  3. 3. The supercritical substrate cleaning apparatus according to claim 1, wherein, The pressure of the first fluid moving along the first fluid moving path is greater than the pressure of the second fluid moving along the second fluid moving path.
  4. 4. The supercritical substrate cleaning apparatus according to claim 1, wherein, The second fluid moving along the second fluid moving path dries and cleans the substrate in a pulse pattern manner in which the pressure is repeatedly increased and decreased, A heater is built in the block portion.
  5. 5. The supercritical substrate cleaning apparatus according to claim 1, wherein, A central block is also provided within the chamber portion between the upper and lower blocks.
  6. 6. The supercritical substrate cleaning apparatus according to claim 1, wherein, The substrate is supported by a substrate supporting portion provided in the block portion, The edge of the substrate supported by the substrate support portion is disposed from the outer end of the block portion to the inner side at a predetermined distance.
  7. 7. The supercritical substrate cleaning apparatus according to claim 1, wherein, The chamber portion includes: A lower chamber having the block portion arranged at the upper portion thereof, and An upper chamber which moves up and down and surrounds the block and the lower chamber, A fixing groove is formed at the inner peripheral surface of the upper chamber, and a movable fixing part selectively inserted into the fixing groove is provided at the lower surface of the lower chamber, so that the movable fixing part is inserted into the fixing groove when the lower chamber is combined with the upper chamber.
  8. 8. The supercritical substrate cleaning apparatus according to claim 7, wherein, The inner side surface of the upper chamber is formed by connecting a first sealing part and a second sealing part, the first sealing part surrounds the block part, the second sealing part forms a step surface with the first sealing part and surrounds the lower chamber, A sealing member is inserted into a sealing insertion groove formed in a rim portion of an upper surface of the lower chamber, and the sealing member is pressurized by the step surface in a state where the upper chamber and the lower chamber are coupled to each other, thereby sealing the accommodating space.
  9. 9. A supercritical substrate cleaning method, comprising: A supercritical atmosphere creation step of moving the first fluid supplied into the chamber section through the first fluid supply port along a first fluid movement path and discharging the first fluid to the first fluid discharge port, and A substrate drying and cleaning step of moving a second fluid supplied to a block portion provided in the chamber portion through a second fluid supply port along a second fluid movement path, and discharging the second fluid to a second fluid discharge port after drying and cleaning the substrate, In the supercritical atmosphere creation step, a first fluid surrounds the block portion and moves, and in the substrate drying step, a second fluid surrounds the substrate and moves.

Description

Supercritical substrate cleaning device and supercritical substrate cleaning method using same Technical Field The present invention relates to a supercritical substrate cleaning apparatus and a supercritical substrate cleaning method using the same, and more particularly, to a supercritical substrate cleaning apparatus and a supercritical substrate cleaning method using the same, which are formed so as to prevent contamination of a substrate. Background The semiconductor manufacturing process includes various processes such as a photolithography process, an etching process, and an ion implantation process, and after each process is completed, a cleaning and drying process for removing impurities remaining on the surface of the substrate is performed before the next process is performed. Typically, the substrate drying process uses isopropyl alcohol (IPA) instead of deionized water on the substrate to dry the substrate. However, when the substrate is dried with isopropyl alcohol, there is a problem in that a phenomenon of inclination (leaning) occurs in which a pattern formed on the substrate is stuck to or inclined due to the surface tension of isopropyl alcohol as a liquid. That is, a pattern having a deep and narrow large aspect ratio (aspect ratio) has a problem of causing tilting during the drying of the substrate. Therefore, in order to prevent the pattern from tilting, a substrate cleaning method using a supercritical fluid has been proposed. But in the case of using a supercritical fluid, other problems are caused in addition to the inclination of the pattern. For example, in the case where supercritical carbon dioxide is supplied into a chamber in an atmospheric pressure state, the supercritical carbon dioxide rapidly decreases in temperature due to adiabatic expansion, and in this process, the supercritical carbon dioxide undergoes a phase change, which causes a problem of particle contamination on a substrate. When supercritical carbon dioxide is instantaneously supplied into the chamber, particles in the pipe are ejected into the chamber due to a high differential pressure, and the substrate is contaminated. In addition, in the process of drying the substrate, substitution of isopropyl alcohol and supercritical carbon dioxide is required to be rapidly performed, but the conventional substrate cleaning device has a problem that substitution of supercritical carbon dioxide is slow due to a stagnation section caused by a complicated fluid pipeline in a chamber. In this way, if the substitution of supercritical carbon dioxide becomes slow, the productivity may be lowered. In the case of etching the substrate, for example, the substrate may be etched and cleaned by applying an etching chemical solution to the upper portion of the substrate in a coating form, replacing the substrate with supercritical carbon dioxide, and spraying the etching chemical solution dissolved in the supercritical carbon dioxide on the substrate provided in the chamber. However, since the conventional substrate cleaning apparatus is not provided with an additional protection mechanism for protecting the inner wall of the chamber, the chemical solution adheres to the inner wall of the chamber during etching cleaning of the substrate, and the inner wall of the chamber is damaged. Therefore, there is a need for developing a supercritical substrate cleaning apparatus that prevents contamination of a substrate and protects the inner wall of a chamber. Disclosure of Invention Technical problem The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a supercritical substrate cleaning apparatus and a supercritical substrate cleaning method using the same, which are formed so as to prevent the occurrence of substrate contamination. Solution to the problem In order to achieve the above object, an embodiment of the present invention provides a supercritical substrate cleaning apparatus including a chamber portion having an accommodation space formed therein, and a block portion provided in the accommodation space and having a pair of upper and lower blocks spaced apart from each other, the block portion supporting a substrate disposed between the upper and lower blocks, the first fluid supplied to the accommodation space through a first fluid supply port connected to the chamber portion being discharged through a first fluid discharge port connected to the chamber portion in a state of surrounding the block portion along a first fluid movement path, the second fluid supplied to the substrate through the block portion being moved in a state of surrounding the substrate along a second fluid movement path, and the first fluid and the second fluid being fluids including supercritical carbon dioxide. In an embodiment of the present invention, the second fluid may be supplied to the upper surface of the center of the substrate through a second fluid supply port connected