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CN-121986589-A - Method for producing a composite structure for microelectronics, optics or optoelectronics

CN121986589ACN 121986589 ACN121986589 ACN 121986589ACN-121986589-A

Abstract

The invention relates to a method of manufacturing a composite structure, comprising (a) forming a temporary substrate (3 ') comprising a carrier substrate (3), wherein a plurality of tile portions (P' 1-P '3) or layers of interest (20) made of a first material are arranged on the carrier substrate (3), (b) forming a detachable interface (5) arranged between or in the carrier substrate (3) and the tile portions or layers of interest, (c) assembling the temporary substrate (3') with a receiving substrate (4) made of a second material, different from the first material, via the tile portions or layers of interest, and (d) removing the carrier substrate (3) by detaching the detachable interface (5) so as to transfer at least a part of the tile portions (P '1-P' 3) or layers of interest (20) to the receiving substrate (4) to form the composite structure.

Inventors

  • Bruno Giseland

Assignees

  • 索泰克公司

Dates

Publication Date
20260505
Application Date
20240409
Priority Date
20231006

Claims (15)

  1. 1. A method of manufacturing a composite structure (4'), the method comprising the steps of: (a) -forming a temporary substrate (3 ') comprising a support substrate (3) and a plurality of tile portions (P' 1-P '3) or layers of interest (20) of a first material arranged on the support substrate (3), wherein the step of forming the temporary substrate (3') comprises: (i) Removing a plurality of tiles (P1-P3) from at least one donor substrate (2) and placing each tile (P1-P3) on an intermediate substrate (1 '), each donor substrate (2) having a diameter smaller than the diameter of said intermediate substrate (1'), or providing a donor substrate (2), (Ii) Forming an embrittlement zone (11) in each tile (P1-P3) by injecting atomic species so as to define a tile portion (P '1-P' 3) to be transferred, or forming an embrittlement zone in the donor substrate by injecting atomic species so as to define a layer of interest (20) to be transferred, (Iii) Bonding the intermediate substrate (1') or the donor substrate to the support substrate (3) via the tiles (P1-P3) or via the layer of interest, and (Iv) Stripping the pieces (P1-P3) or the donor substrate along the embrittlement zone (11) in order to transfer the piece portions (P '1-P' 3) or the layer of interest onto the supporting substrate (3), (B) Forming a detachable interface (5) arranged between the support substrate (3) and the tile portion (P '1-P' 3) or the layer of interest (20), or in the tile portion (P '1-P' 3) or the layer of interest (20) or on the tile portion (P '1-P' 3) or the layer of interest (20), (C) -assembling the temporary substrate (3 ') with a receiving substrate (4) made of a second material, different from the first material, via the tile portions (P '1-P ' 3) or the layer of interest (20), and (D) -removing the support substrate (3) by disassembling the detachable interface (5) so as to transfer the tile portions (P '1-P' 3) or at least a portion of the layer of interest (20) onto the receiving substrate (4) to form the composite structure.
  2. 2. Method according to claim 1, comprising at least one step of processing the tile portions (P '1-P' 3) or the layer of interest (20) before assembling the tile portions (P '1-P' 3) or the layer of interest (20) on the receiving substrate (4).
  3. 3. The method of claim 2, wherein the processing comprises: Epitaxial on each tile portion or on said layer of interest a layer of at least one third material, Etching is carried out in the presence of a metal layer, The surface treatment is carried out in a manner such that, The doping is carried out in such a way that, -A heat treatment of the substrate to be heated, -Forming channels or trenches in the temporary substrate providing access for etchant to the detachable interface, and/or -Forming an interconnect.
  4. 4. A method according to claim 2 or 3, wherein the treatment of the tile portions (P '1-P' 3) or the layer of interest (20) is performed at a temperature of greater than or equal to 500 ℃.
  5. 5. The method according to one of claims 1 to 4, wherein the receiving substrate (4) comprises at least a portion of an electronic circuit formed prior to the assembly of the temporary substrate (3') with the receiving substrate (4).
  6. 6. The method of claim 5, comprising forming the portion of the electronic circuit by a CMOS process.
  7. 7. Method according to claim 6, comprising at least one step of finalizing the electronic circuit after transferring the tile portions (P '1-P' 3) or the layer of interest (20) onto the receiving substrate (4).
  8. 8. The method of claim 7, wherein each step of finalizing the electronic circuit is performed at a temperature below 500 ℃.
  9. 9. The method according to one of claims 5 to 8, wherein the electronic circuit comprises at least one transistor, in particular a field effect transistor, CMOS transistor, biCMOS transistor or bipolar transistor, and/or at least one diode, in particular a laser diode or a Light Emitting Diode (LED).
  10. 10. The method according to one of claims 1 to 9, wherein the first material is selected from: Group III-V materials, such as indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN), indium arsenide (InAs), gallium arsenide (GaAs), aluminum arsenide (AlAs), indium phosphide (InP), gallium phosphide (GaP) or aluminum phosphide (AlP), Piezoelectric materials, such as lithium tantalate (LiTaO 3), lithium niobate (LiNbO 3 ), potassium sodium niobate (KxNa 1-xNbO3 or KNN), barium titanate (BaTiO 3 ), quartz, lead zirconate titanate (PZT), lead magnesium niobate-lead titanate compound (PMN-PT), zinc oxide (ZnO), aluminum nitride (AlN) or scandium aluminum nitride (AlScN), Germanium or silicon carbide, and An electrically insulating material such as diamond, strontium titanate, yttrium stabilized zirconia or sapphire.
  11. 11. The method of claim 10 in combination with claim 4, wherein the third material is selected from the group consisting of III-V materials, piezoelectric materials, silicon carbide, silicon germanium, and germanium.
  12. 12. The method according to one of claims 1 to 11, wherein the second material is selected from the group consisting of silicon, germanium, silicon carbide and group III-V materials, in particular gallium arsenide.
  13. 13. The method according to one of claims 1 to 12, wherein the support substrate (3) comprises silicon, silicon carbide, in particular polycrystalline silicon carbide, or aluminum nitride, in particular polycrystalline aluminum nitride.
  14. 14. The method according to one of claims 1 to 13, wherein the detachable interface (5) comprises a selectively etched layer, a porous layer and/or a layer with a low binding energy, and wherein during removal of the support substrate (3) the detachment of the interface comprises applying a mechanical action, a chemical etching and/or a thermal treatment to the layer.
  15. 15. Method according to claim 14, comprising depositing a layer stack (6) on a free surface of each tile portion (P '1-P ' 3) of the temporary substrate (3 ') or of the layer of interest (20), the detachable interface (5) being formed by one of the layers of the stack (6).

Description

Method for producing a composite structure for microelectronics, optics or optoelectronics Technical Field The present invention relates to a method of manufacturing a composite structure for microelectronics, optics or optoelectronics. Background In the microelectronics, optics or optoelectronics field, the design of multilayer structures sometimes requires transferring tiles in the form of portions of one layer of a donor substrate onto a support substrate or receiving substrate. This type of method is commonly referred to as a tiling process and involves partial transfer of a layer taken from a donor substrate in order to form one or more tiles arranged according to a pattern or at predetermined locations on a support substrate. Such tiling may be necessary due to the size difference between the donor substrate and the support substrate. More specifically, due to the dimensional difference, it is impossible to transfer one layer of the donor substrate covering the entire surface of the support substrate. One well-known method for transferring layers is the Smart cut (tm) method, in which an embrittlement zone defining the layer to be transferred is formed by injecting an atomic species into a donor substrate, the donor substrate is bonded to a support substrate, and then the donor substrate is peeled along the embrittlement zone so as to transfer the layer of the donor substrate to the support substrate. However, this method assumes that the donor substrate and the support substrate have the same size. However, while large-size silicon substrates are available (typically having a diameter of 300 mm a), other materials of interest currently exist only in the form of small-size bulk substrates, such as 100 a mm a or 150 a mm a. In addition, these materials of interest are sometimes particularly expensive, and it is therefore desirable to minimize any waste materials formed during transfer. This is especially true, for example, for group III-V semiconductor materials including nitrides (e.g., indium nitride (InN), gallium nitride (GaN), and aluminum nitride (AlN)) for binary compounds, arsenides (e.g., indium arsenide (InAs), gallium arsenide (GaAs), and aluminum arsenide (AlAs)) and phosphides (e.g., indium phosphide (InP), gallium phosphide (GaP), and aluminum phosphide (AlP) for binary compounds. Instead of transferring the entire layer of donor substrates, one solution based on the Smart cut (TM) method consists in taking one or more tiles from at least one donor substrate and transferring said tiles onto an intermediate support so as to form a so-called false testimony bulk substrate, forming an embrittlement zone in each tile by injecting an atomic species, bonding the false testimony bulk substrate to a receiving substrate via the tile, and stripping each tile along the embrittlement zone so as to transfer a portion of each tile onto the receiving substrate. The intermediate substrate and the receiving substrate have the same dimensions. However, in some cases, the material of the tile portion and the material of the receiving substrate must be subjected to different and mutually incompatible method steps. For example, if the material of the tile portion is a group III-V material, such as InP, and the material of the receiving substrate is silicon, the tile portion is intended to receive one or more additional layers of group III-V material formed by epitaxy, and the receiving substrate is intended to form an electronic circuit element according to a CMOS process ("abbreviation of complementary metal oxide semiconductor"). However, CMOS production lines cannot include epitaxy of group III-V materials, particularly due to the risk of contamination of the production line by the group III-V materials. Document US 2011/0244013 describes a method for manufacturing a structure comprising a silicon substrate (the silicon substrate comprising a photonic element, which is a waveguide or modulator) and InP-based tiles supporting a laser structure. The tile is first formed on a support substrate and then the tile portion is transferred from the support substrate to a silicon receiving substrate comprising photonic elements. However, this Smart cut-based approach to transfer presents several problems. In some embodiments, hydrogen is injected into a tile disposed on a support substrate to form an embrittlement zone in the tile. Thus, the implanted hydrogen must pass through the laser structure at the top of the tile, which risks damaging it. Furthermore, depending on the thickness of the laser structure, it may be difficult to achieve the desired implantation depth using industrially available implantation devices. In other embodiments, hydrogen implantation is generated in the InP donor substrate via a face opposite to the face where the laser structures are formed, prior to dicing the dice, to avoid the implanted hydrogen from passing through the laser structures. However, this approach results in a significan