CN-121986602-A - Through electrode substrate, semiconductor package, and method for manufacturing through electrode substrate

Abstract

The through electrode substrate includes a glass substrate having a first surface, a second surface opposite to the first surface, and first and second through holes penetrating from the first surface to the second surface, a through electrode disposed in the first through hole, a resin member disposed in the second through hole, and a wiring layer disposed between the glass substrate and the semiconductor element. The first through hole includes a first opening that opens at a first surface of the glass substrate, and a second opening that opens at a second surface of the glass substrate. The second through hole includes a third opening that opens at the first surface of the glass substrate and a fourth opening that opens at the second surface of the glass substrate. The through electrode seals the first through hole between the first opening and the second opening. The resin member continuously extends from the third opening to the fourth opening in the second through hole.

Inventors

• Kanmochi Satoru

Assignees

• 大日本印刷株式会社

Dates

Publication Date

20260505

Application Date

20241011

Priority Date

20231012

Claims (20)

1. 1. A through electrode substrate on which a semiconductor element is mounted, comprising: a glass substrate including a first surface, a second surface located on the opposite side of the first surface, and a first through hole and a second through hole penetrating from the first surface to the second surface; A through electrode located in the first through hole; a resin member located in the second through hole, and A wiring layer between the glass substrate and the semiconductor element, The first through-hole includes a first opening that opens at the first surface of the glass substrate and a second opening that opens at the second surface of the glass substrate, The second through hole includes a third opening opened at the first surface of the glass substrate and a fourth opening opened at the second surface of the glass substrate, The through electrode seals the first through hole between the first opening and the second opening, The resin member continuously extends from the third opening to the fourth opening in the second through hole.
2. 2. The through electrode substrate according to claim 1, wherein, The first through-hole includes a first minimum portion located between the first opening and the second opening and having a minimum aperture of the first through-hole, The through electrode does not seal the first through hole at the first opening and the second opening, but seals the first through hole at least at the first minimum portion.
3. 3. The through electrode substrate according to claim 1, wherein, The through electrode is filled in the first through hole.
4. 4. The through electrode substrate according to claim 1, wherein, The resin member is filled in the second through hole.
5. 5. The through electrode substrate according to claim 1, wherein, The second through hole has the same shape as the first through hole.
6. 6. The through electrode substrate according to claim 1, wherein, The second through hole is located in a region overlapping the semiconductor element in a plan view.
7. 7. The through electrode substrate according to claim 6, wherein, The second through hole is located in a region inside 3mm from the outer periphery of the semiconductor element in plan view.
8. 8. The through electrode substrate according to claim 6, wherein, The plurality of second through holes are arranged at equal intervals in a region overlapping the semiconductor element in a plan view.
9. 9. The through electrode substrate according to claim 6, wherein, In a region overlapping the semiconductor element in a plan view, 10 to 250 second through holes are arranged per 100mm 2 .
10. 10. The through electrode substrate according to claim 1, wherein, The aperture at the third opening of the second through hole is 50 μm or more and 100 μm or less.
11. 11. The through electrode substrate according to claim 1, wherein, The thickness of the glass substrate is 100 μm or more and 1200 μm or less.
12. 12. The through electrode substrate according to claim 1, wherein, The plane area of the semiconductor element is more than 100mm 2 .
13. 13. A through electrode substrate on which a semiconductor element is mounted, comprising: a glass substrate including a first surface, a second surface located on the opposite side of the first surface, and a first through hole and a second through hole penetrating from the first surface to the second surface; A through electrode located in the first through hole and the second through hole, respectively; a resin member located at least in the second through hole, and A wiring layer between the glass substrate and the semiconductor element, The first through-hole includes a first opening that opens at the first side of the glass substrate, a second opening that opens at the second side of the glass substrate, and a first wall surface that is located between the first opening and the second opening, The second through hole includes a third opening at the first face of the glass substrate, a fourth opening at the second face of the glass substrate, and a second wall face between the third opening and the fourth opening, The through electrode located in the first through hole extends from the first opening to the second opening along the first wall surface, The through electrode located in the second through hole extends from the third opening to the fourth opening along the second wall surface, The resin member is located inside the through electrode in the second through hole, continuously extends from the third opening to the fourth opening, The aperture at the third opening of the second through hole is 50 μm or more and 100 μm or less, The thickness of the through electrode located in the second through hole is 5 μm or more and 25 μm or less.
14. 14. The through electrode substrate according to claim 13, wherein, The second through hole is located in a region overlapping the semiconductor element in a plan view.
15. 15. The through electrode substrate according to claim 14, wherein, In a region overlapping the semiconductor element in a plan view, 27 or more and 2500 or less second through holes are arranged per 100mm 2 .
16. 16. A semiconductor package is provided with: the through electrode substrate according to any one of claims 1 to 15, and And a semiconductor element mounted on the through electrode substrate.
17. 17. A through electrode substrate is provided with: A glass substrate including a first surface, a second surface located on the opposite side of the first surface, and a first through hole and a second through hole penetrating from the first surface to the second surface; A through electrode located in the first through hole, and A resin member located in the second through hole, The first through-hole includes a first opening that opens at the first surface of the glass substrate and a second opening that opens at the second surface of the glass substrate, The second through hole includes a third opening opened at the first surface of the glass substrate and a fourth opening opened at the second surface of the glass substrate, The through electrode seals the first through hole between the first opening and the second opening, The resin member continuously extends from the third opening to the fourth opening in the second through hole.
18. 18. A through electrode substrate is provided with: A glass substrate including a first surface, a second surface located on the opposite side of the first surface, and a first through hole and a second through hole penetrating from the first surface to the second surface; a through electrode disposed in the first through hole and the second through hole, respectively, and A resin member located at least in the second through hole, The first through-hole includes a first opening that opens at the first side of the glass substrate, a second opening that opens at the second side of the glass substrate, and a first wall surface that is located between the first opening and the second opening, The second through hole includes a third opening at the first face of the glass substrate, a fourth opening at the second face of the glass substrate, and a second wall face between the third opening and the fourth opening, The through electrode located in the first through hole extends from the first opening to the second opening along the first wall surface, The through electrode located in the second through hole extends from the third opening to the fourth opening along the second wall surface, The resin member is located inside the through electrode in the second through hole and continuously extends from the third opening to the fourth opening, The aperture at the third opening of the second through hole is 50 μm or more and 100 μm or less, The thickness of the through electrode located in the second through hole is 5 μm or more and 25 μm or less.
19. 19. A method of manufacturing a through electrode substrate on which a semiconductor element is mounted, the method comprising: A step of preparing a glass substrate including a first surface, a second surface located on the opposite side of the first surface, and first and second through holes penetrating from the first surface to the second surface; Forming a through electrode in the first through hole; a step of forming a resin member in the second through hole, and A step of forming a wiring layer on the first surface of the glass substrate, The first through-hole includes a first opening that opens at the first surface of the glass substrate and a second opening that opens at the second surface of the glass substrate, The second through hole includes a third opening opened at the first surface of the glass substrate and a fourth opening opened at the second surface of the glass substrate, The through electrode seals the first through hole between the first opening and the second opening, The resin member continuously extends from the third opening to the fourth opening in the second through hole.
20. 20. A method of manufacturing a through electrode substrate on which a semiconductor element is mounted, the method comprising: A step of preparing a glass substrate including a first surface, a second surface located on the opposite side of the first surface, and first and second through holes penetrating from the first surface to the second surface; forming a through electrode in each of the first through hole and the second through hole; A step of forming a resin member at least in the second through hole, and A step of forming a wiring layer on the first surface of the glass substrate, The first through-hole includes a first opening that opens at the first side of the glass substrate, a second opening that opens at the second side of the glass substrate, and a first wall surface that is located between the first opening and the second opening, The second through hole includes a third opening at the first face of the glass substrate, a fourth opening at the second face of the glass substrate, and a second wall face between the third opening and the fourth opening, The through electrode located in the first through hole extends from the first opening to the second opening along the first wall surface, The through electrode located in the second through hole extends from the third opening to the fourth opening along the second wall surface, The resin member is located inside the through electrode in the second through hole and continuously extends from the third opening to the fourth opening, The aperture at the third opening of the second through hole is 50 μm or more and 100 μm or less, The thickness of the through electrode located in the second through hole is 5 μm or more and 25 μm or less.

Description

Through electrode substrate, semiconductor package, and method for manufacturing through electrode substrate Technical Field Embodiments of the present disclosure relate to a through electrode substrate, a semiconductor package, and methods of manufacturing the same. Background The through electrode substrate is used in various applications. The through electrode substrate is a substrate including a first surface, a second surface, and a through hole, and is a member having a through electrode located in the through hole. The through electrode substrate is used as an interposer, for example. An interposer is a member interposed between two electrical components. The through electrode substrate is interposed between the semiconductor element and the mounting substrate, for example. The through electrode substrate may include a wiring layer. The wiring layer functions to relocate the pads or terminals of the semiconductor element to other places, for example. Such a wiring layer is also called a rewiring layer. The wiring layer is disposed on the substrate. Further, a glass substrate is also used as the substrate of the through electrode substrate. Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2023-751206 Disclosure of Invention Problems to be solved by the invention The wiring layer sometimes includes a gas component. It is necessary to discharge the gas component contained in the wiring layer to the outside. However, when a glass substrate is used as the substrate of the through electrode substrate, in the semiconductor package having the semiconductor element mounted on the through electrode substrate, the wiring layer is disposed between the glass substrate and the semiconductor element. In this case, the glass substrate and the semiconductor element are difficult to permeate gas, and thus the gas component contained in the wiring layer is difficult to be discharged to the outside. For this reason, the gas component contained in the wiring layer cannot be sufficiently discharged to the outside, and the gas component remains in the wiring layer. Due to the retained gas component, the wiring layer may swell, and the wiring layer may be peeled off from the glass substrate. As a result, the reliability of the through electrode substrate may be reduced. An object of embodiments of the present disclosure is to provide a through electrode substrate and a semiconductor package, which can effectively solve such problems, and methods for manufacturing the same. Means for solving the problems Embodiments of the present disclosure relate to [1] to [21] below. [1] A through electrode substrate on which a semiconductor element is mounted, comprising: a glass substrate including a first surface, a second surface located on the opposite side of the first surface, and a first through hole and a second through hole penetrating from the first surface to the second surface; A through electrode located in the first through hole; a resin member located in the second through hole, and A wiring layer between the glass substrate and the semiconductor element, The first through-hole includes a first opening that opens at the first surface of the glass substrate and a second opening that opens at the second surface of the glass substrate, The second through hole includes a third opening opened at the first surface of the glass substrate and a fourth opening opened at the second surface of the glass substrate, The through electrode seals the first through hole between the first opening and the second opening, The resin member continuously extends from the third opening to the fourth opening in the second through hole. [2] The through electrode substrate according to [1], The first through-hole includes a first minimum portion located between the first opening and the second opening and having a minimum aperture of the first through-hole, The through electrode does not seal the first through hole at the first opening and the second opening, but seals the first through hole at least at the first minimum portion. [3] The through electrode substrate according to [1], The through electrode is filled in the first through hole. [4] The through electrode substrate according to any one of [1] to [3], The resin member is filled in the second through hole. [5] The through electrode substrate according to any one of [1] to [4], The second through hole has the same shape as the first through hole. [6] The through electrode substrate according to any one of [1] to [5], The second through hole is located in a region overlapping the semiconductor element in a plan view. [7] The through electrode substrate according to [6], The second through hole is located in a region inside 3mm from the outer periphery of the semiconductor element in plan view. [8] The through-electrode substrate according to [6] or [7], The plurality of second through holes are arranged at equal intervals in a region overlappi