CN-121988165-A - Regeneration device and regeneration method for silicon carbide substrate grinding fluid

Abstract

The invention provides a regeneration device of silicon carbide substrate grinding fluid, which comprises a tank body, a cathode, an anode and more than two separators, wherein the tank body comprises a top, a bottom and two side walls, the top is opposite to the bottom, the two side walls are opposite, the cathode is arranged in the tank body and adjacent to one of the two side walls, the anode is arranged in the tank body and adjacent to the other one of the two side walls, the separators are arranged at the bottom of the tank body and between the tank body and the cathode, the tank body is provided with a feed inlet, and the feed inlet is arranged at the top of the tank body and adjacent to the cathode relative to the anode. The invention also provides a regeneration method of the silicon carbide substrate grinding fluid by using the regeneration device.

Inventors

• ZHAO ZONGYI
• WU WEIQI
• LI YANCHENG
• LAI ZHIHUANG
• WU PUWEI
• ZHENG ZIMIN
• CAI SHUNYU

Assignees

• 台湾永光化学工业股份有限公司
• 赖志煌

Dates

Publication Date

20260508

Application Date

20241106

Claims (15)

1. 1. A regeneration device for a silicon carbide substrate polishing liquid, comprising: A tank body comprising a top, a bottom and two side walls, wherein the top is opposite to the bottom, and the two side walls are opposite; a cathode disposed in the tank and adjacent to one of the two sidewalls; An anode disposed in the tank and adjacent to the other of the two side walls; More than two separators arranged at the bottom of the tank body and positioned in the tank body and between the cathode and the anode; The cell body is provided with a feed inlet, the feed inlet is arranged at the top of the cell body, and the feed inlet is adjacent to the cathode relative to the anode.
2. 2. The regeneration device of claim 1, wherein the two or more separators comprise a first separator and a second separator, the first separator being adjacent the cathode, the second separator being adjacent the anode, and the first separator having a height that is less than a height of the second separator.
3. 3. The regeneration device of claim 2, wherein the tank has a discharge port disposed at a bottom of the tank and between the first partition and the second partition.
4. 4. The regeneration device of claim 1, wherein the tank has a height and a width, and wherein the ratio of the height to the width is between 4:1 and 6:1.
5. 5. The regeneration device of claim 1, wherein the tank and the two or more baffles are each made of a plastic material.
6. 6. The regeneration device of claim 1, wherein the cathode and the anode are each made of a metal, an alloy, a conductive metal oxide, a conductive ceramic material, or a combination thereof.
7. 7. A method for regenerating a silicon carbide substrate polishing liquid, comprising the steps of: Providing a regeneration device according to any one of claims 1to 6, wherein an electrophoretic fluid is disposed in the tank; introducing a used grinding fluid from the feed inlet of the tank body, providing an electric field between the cathode and the anode, and And collecting the partitioning liquid between the two or more partition boards.
8. 8. The method of regenerating according to claim 7, wherein the used polishing liquid comprises alumina particles and silicon-containing compound particles.
9. 9. The regeneration method according to claim 7, wherein in the step of collecting the partitioning liquid located between the two or more separators, a weight ratio of silicon to aluminum in the collected partitioning liquid is less than 2%.
10. 10. The method of claim 7, wherein the electrophoretic fluid is a potassium permanganate solution.
11. 11. The regeneration method according to claim 10, characterized in that the concentration of the potassium permanganate solution is between 0.5 wt% and 3wt%.
12. 12. The regeneration method according to claim 7, characterized in that the electric field is between 0.1V/cm and 3V/cm.
13. 13. The method according to claim 7, further comprising, after the step of collecting the partitioning liquid between the two or more separators, a step of adjusting a potassium permanganate concentration and an alumina concentration in the collected partitioning liquid, adjusting a pH of the collected partitioning liquid, or adjusting a particle size distribution of alumina in the collected partitioning liquid to obtain an adjusted polishing liquid.
14. 14. The method of claim 13, further comprising the step of filtering the conditioned slurry to obtain a regenerated slurry after the step of obtaining the conditioned slurry.
15. 15. The method of regenerating a polishing slurry according to claim 14, wherein the regenerating a polishing slurry comprises: Alumina in an amount between 1.0 wt% and 20.0 wt%; potassium permanganate, content between 0.5 wt% and 3.0. 3.0 wt%; Acid-base regulator, and The balance of water.

Description

Regeneration device and regeneration method for silicon carbide substrate grinding fluid Technical Field The invention relates to the technical field of a regeneration device and a regeneration method of polishing liquid, in particular to a regeneration device and a regeneration method of silicon carbide substrate polishing liquid. Background Compared with silicon (Si), the wide-energy-gap semiconductor silicon carbide (SiC) has a breakdown electric field of 10 times, an energy gap width of 3 times, a power density of 50 times and a thermal conductivity of 3 times, so that the silicon carbide (SiC) is more suitable for being used as a material of high-power elements such as a power electronic charging device and the like compared with other compound semiconductors. The silicon carbide application field covers electric vehicles, rail transportation, wind power generation and 5G application, and in order to reach the standard of 2050 zero carbon emission, the market growth of the electric vehicles is rapid, and silicon carbide chips are important elements of the electric vehicles. Currently, the estimated growth rate of the silicon carbide application market in the market reaches 19%, the market demand in 2025 reaches 20 hundred million dollars, and the annual average composite growth rate reaches 23.7%, which drives the expansion of silicon carbide and related semiconductor industries. Chemical mechanical polishing is often used in the fabrication of silicon carbide chips. The waste liquid after the use contains harmful transition metals such as manganese metal, and a large amount of acid is needed to be used for treating the waste water, which is another hazard to the environment. If the materials in the used slurry can be reused, the water intake and the waste treatment cost can be effectively reduced, and the aims of recycling economy and green chemistry can be effectively achieved. In view of this, the present invention is expected to recycle and reuse the primary slurry in an electrochemical manner without changing the primary components, thereby reducing the process cost and carbon emissions and achieving the goals of recycling economy and perpetual operation. Disclosure of Invention The main object of the present invention is to provide a regeneration device and a regeneration method for a silicon carbide substrate polishing liquid, which can restore the used silicon carbide substrate polishing liquid to the polishing function of a new liquid. The invention provides a regeneration device of silicon carbide substrate grinding fluid, which comprises a tank body, a cathode, an anode and more than two separators, wherein the tank body comprises a top, a bottom and two side walls, the top is opposite to the bottom, the two side walls are opposite, the cathode is arranged in the tank body and adjacent to one of the two side walls, the anode is arranged in the tank body and adjacent to the other one of the two side walls, the separators are arranged at the bottom of the tank body and between the tank body and the cathode, the tank body is provided with a feed inlet, and the feed inlet is arranged at the top of the tank body and adjacent to the cathode relative to the anode. In the regeneration device of the present invention, the number of separators is not particularly limited as long as it is two or more and can be adjusted according to the need. For example, the number of the separators may be 2 to 100, 2 to 50, or 2 to 20, but the present invention is not limited thereto. In the present invention, the height of the separator is designed in a stepwise increasing manner from the cathode toward the anode, i.e., the height of the separator adjacent to the cathode is lowest and gradually increasing, and the height of the separator adjacent to the anode is highest. For example, in one embodiment of the invention, more than two separators may include a first separator and a second separator, wherein the first separator is adjacent to the cathode, the second separator is adjacent to the anode, and the height of the first separator is less than the height of the second separator. In the regeneration device of the present invention, the tank has a height and a width, and the ratio (H1/W) of the height (H1) to the width (W) is between 4:1 and 6:1. In the regeneration device of the present invention, the height (H2) of the separator nearest to the anode is less than or equal to half the height (H1) of the tank, i.e., h2+. 0.5H1. In the regeneration device, when the ratio of the height to the width of the groove body is in the range and the partition plates with gradually increasing heights are arranged, the risk of cross contamination of samples caused by disturbance in sampling can be effectively reduced, the moving distance of particles is predicted through linear operation, and meanwhile, the sampling resolution is improved. In the regeneration device of the present invention, the tank body may have a discharge p