Search

CN-121989162-A - Method for cleaning-free residual glue in degumming process of ultrathin monocrystalline silicon wafer

CN121989162ACN 121989162 ACN121989162 ACN 121989162ACN-121989162-A

Abstract

The invention discloses a method for removing residual glue in an ultrathin monocrystalline silicon wafer degumming process, which comprises the steps of firstly adhering a plastic plate and an iron plate together by using adhesive plate glue, adhering a monocrystalline square rod and the plastic plate together by using adhesive rod glue, conveying the silicon rod after the adhesion is completed to be solidified to be more than or equal to 2H to a slicing machine, cutting the silicon rod by using a diamond wire for 110-150 min, cutting the silicon rod into 4200-4800 ultrathin monocrystalline silicon wafers with the thickness of 110-130 microns, putting the crystal support iron plate under a degumming tool, conveying the wafer support iron plate to the degumming process for degumming, carefully cleaning the silicon wafers by using an ultrasonic cleaning technology, removing stubborn dirt on the silicon wafers, degumming the silicon wafers at a high temperature by using a degumming agent, separating the ultrathin monocrystalline silicon wafers from a mounting plate, innovatively optimizing the degumming process based on the performance of glue and the degumming agent, smoothly peeling the silicon wafers from the adhesive rod glue, a workpiece plate and a resin plate in the degumming process, and reducing the residual proportion of the surface and the chamfer glue wire from 20% to 0.05%, and basically realizing the glue-free.

Inventors

  • ZHANG FENG
  • CHEN YIDONG
  • GU XIAOWEI
  • LIU LIANG
  • XU KUN

Assignees

  • 苏州协鑫光伏科技有限公司

Dates

Publication Date
20260508
Application Date
20241106

Claims (10)

  1. 1. A method for cleaning-free residual glue in an ultra-thin monocrystalline silicon wafer degumming procedure is characterized by comprising the following steps: s1, an adhesive procedure, namely firstly adhering a plastic plate and an iron plate together by using adhesive glue of the iron plate, and adhering a single crystal square rod and the plastic plate together by using adhesive glue of the rod; S2, conveying the silicon rod subjected to bonding to a slicing machine after solidification is more than or equal to 2H, cutting the silicon rod by adopting a diamond wire for 110-150 min, cutting the silicon rod into 4200-4800 pieces of ultrathin monocrystalline silicon wafers with the thickness of 110-130 microns, and taking the crystal support iron plate off the machine to a degumming tool, and conveying the crystal support iron plate to the degumming tool for degumming; S3, ultrasonic cleaning and degumming processes, namely arranging a first tank and a second tank in sequence as an ultrasonic cleaning tank, carefully cleaning the silicon wafer mainly through an ultrasonic cleaning technology, removing stubborn dirt on the silicon wafer, and using a degumming agent as a high-temperature degumming tank for degumming the silicon wafer at high temperature so as to separate the ultrathin monocrystalline silicon wafer from the mounting plate.
  2. 2. The method for cleaning-free residual glue in the degumming process of the ultrathin monocrystalline silicon wafer is characterized by comprising, by weight, 100-250 parts of epoxy resin, 15-30 parts of ester, 0.1-9 parts of defoamer, 0.01-3 parts of coupling agent, 0.01-2 parts of diluent, 12-55 parts of filler, 2-8 parts of adhesion auxiliary agent and 3-10 parts of acid-sensitive material, and B parts of curing agent, 10-50 parts of ester, 7-30 parts of polyamide, 5-10 parts of diluent and 20-50 parts of filler.
  3. 3. The method for removing residual gum in the degumming process of ultra-thin monocrystalline silicon wafer according to claim 2, wherein the filler is one or more selected from magnesium silicate, calcium carbonate and aluminum hydroxide.
  4. 4. The method for cleaning-free residual gum in a degumming process of an ultra-thin monocrystalline silicon piece according to claim 2, wherein the acid-sensitive material is selected from 1-propanethiol or 1, 3-propanedithiol.
  5. 5. The method for cleaning-free residual gum in a degumming process of an ultrathin monocrystalline silicon wafer according to claim 2, wherein the adhesion promoter is mainly an epoxy substrate wetting agent, and the epoxy substrate wetting agent is selected from methylsilane or ethylsilane.
  6. 6. The method for eliminating residual gum in the degumming process of ultra-thin monocrystalline silicon wafer according to claim 2, wherein the epoxy resin is bisphenol A epoxy resin, and the bisphenol A epoxy resin is one or more selected from E-51, E-55 and E-56.
  7. 7. The method for cleaning-free residual gum in a degumming process of an ultra-thin monocrystalline silicon piece according to claim 2, wherein the curing agent is selected from polythiol 3830 or polythiol JH-3381.
  8. 8. The method for cleaning-free residual gum in the degumming process of an ultrathin monocrystalline silicon wafer according to claim 1, wherein the degumming agent comprises, by mass, 20% of citric acid, 55% of lactic acid and 25% of a compound surfactant, and the compound surfactant mainly comprises a penetrating agent and a dispersing agent.
  9. 9. The method for cleaning-free residual gum in the degumming process of an ultrathin monocrystalline silicon wafer according to claim 1, wherein 25kg of degumming agent is added in a single tank, 10kg of agent is added after 150 knives, and the number of degumming knives is increased to 300-350 knives.
  10. 10. The method for cleaning-free residual gum in the degumming process of an ultrathin monocrystalline silicon wafer according to claim 1, wherein the time of the cleaning tank is reduced to 5-10 s, the soaking time is reduced to 100s, the degumming time is reduced to 180s, the degumming temperature is reduced to 60 ℃, the degumming consumption is reduced to 470s, and the single-blade degumming consumption is reduced to 140s.

Description

Method for cleaning-free residual glue in degumming process of ultrathin monocrystalline silicon wafer Technical Field The invention relates to the technical field of photovoltaic slicing, in particular to a method for cleaning-free residual glue in an ultra-thin monocrystalline silicon wafer degumming procedure. Background The solar cell silicon wafer is formed by cutting a silicon rod through a multi-wire cutting machine, and a diamond wire multi-wire cutting technology becomes a mainstream technology of multi-wire cutting. The diamond wire multi-wire cutting technology has the advantages of high cutting efficiency, small silicon wafer damaged layer, small deviation of total thickness of the silicon wafer and the like. The multi-wire cutting is to wind the diamond wire on the guide wheel groove of the guide wheel, so as to limit the movement of the diamond wire in the horizontal direction and make the cutting position constant. A plurality of diamond wires are wound into a wire net after being wound into a circle, a silicon rod is arranged on a workbench, the workbench is fed towards the direction close to the diamond wires according to a set feeding speed, and meanwhile, the diamond wire slicing machine adopts a diamond wire unidirectional circulation or reciprocating circulation movement mode to enable the diamond wires and cut objects to form relative grinding movement, so that the aim of cutting silicon wafers is achieved. In order to realize the cutting process, the plastic plate iron plate adhesive glue is adhered to the crystal support iron plate, then the single crystal square bar is adhered to the plastic plate by the crystal support iron plate adhesive glue, and then the single crystal square bar is fixed in a cutting cavity of a cutting machine for cutting, so that after the silicon wafer is cut, the silicon wafer and the plastic plate are degummed, so that the silicon wafer is removed from the plastic plate without damage, and the next working procedure is carried out. The degumming process is generally divided into three steps of spray degumming, ultrasonic cleaning and high-temperature degumming, and the degumming effect is achieved by adding a degumming agent into a degumming tank. The degumming performance is closely related to the glue performance, the degumping agent performance and the degumming process. Along with the gradual reduction of the thickness of the silicon wafer from 150um to 130um or even thinner, the bonding strength of the stick-sticking glue is continuously improved so as to support the silicon wafer to avoid the phenomenon of falling after cutting. The increased adhesive strength presents a new challenge to the degumming process, and how to successfully degumm without increasing the cost becomes a new subject. In the prior art, when degumming, part of glue remains on the viscose surface or chamfer of the silicon wafer, and needs to be manually removed, if personnel are leaked or wiped out, the glue cannot be removed in the process of a cleaning machine to form a residual glue dirt piece, after the silicon wafer enters a wafer age, the line diameter is thinned, gaps between the glue layers are reduced, the existing degumming agent is difficult to reach the middle position of the silicon wafer, so that the silicon wafer at the middle position is difficult to deglue, and edge breakage is easy to cause. The existing degumming agent is directly used as sewage to be discharged after reaching the degumming quantity of 160 cutters, so that the cost of the agent is wasted, and the sewage disposal cost is high. Therefore, aiming at the problems, the invention provides a method for eliminating residual glue in the degumming process of an ultrathin monocrystalline silicon wafer, which aims at starting from the glue performance, iterating the glue performance, improving the permeability of a degumming agent, and reducing the cost of the agent under the condition of not influencing the degumming effect by adopting a supplementing mode. Disclosure of Invention The invention aims to provide a method for cleaning residual glue in an ultra-thin monocrystalline silicon wafer degumming procedure, which starts from the glue performance, iterates the glue performance, improves the permeability of a degumming agent, and reduces the cost of the agent under the condition of not affecting the degumming effect by adopting a supplementing mode. The aim of the invention is achieved by the following technical scheme: a method for cleaning-free residual glue in an ultra-thin monocrystalline silicon wafer degumming procedure specifically comprises the following steps: s1, an adhesive procedure, namely firstly adhering a plastic plate and an iron plate together by using adhesive glue of the iron plate, and adhering a single crystal square rod and the plastic plate together by using adhesive glue of the rod; S2, conveying the silicon rod subjected to bonding to a slicing machine after solidification is