CN-121989374-A - Crystal processing method

CN121989374ACN 121989374 ACN121989374 ACN 121989374ACN-121989374-A

Abstract

The invention provides a processing method of a crystal, which is used for cutting the crystal by processing equipment, wherein the processing equipment comprises a cutting tool and a bearing film, the method comprises the steps that the crystal is provided with a front surface and a back surface which are oppositely arranged, a first protective layer bonded by wax is arranged on the front surface of the crystal, and a second protective layer bonded by wax is arranged on the back surface of the crystal to form a cut unit; the method comprises the steps of adhering a cut unit to a bearing film, enabling the bearing film to be located on the back face of the cut unit, placing the bearing film adhered with the cut unit on processing equipment, controlling a cutting tool to cut the cut unit to form cutting particles, and taking down the bearing film and a protective layer on the cutting particles to form crystal particles. By arranging the wax-bonded protective layers on the two sides of the crystal, the fracture resistance of the crystal in the cutting process can be remarkably enhanced, and edge chipping, cracking or internal microcracks generated in the cutting process of the crystal are greatly reduced, so that the processing yield of crystal particles is directly improved.

Inventors

ZHENG QINGYANG
WANG XIAOJUN
LI ZHIBO
LIU XUEFEI
WANG YAN
WANG ZHENHE
XU HANG
LI JIABIN

Assignees

沈阳和研科技股份有限公司

Dates

Publication Date: 20260508
Application Date: 20251230

Claims (10)

1. A method of processing a crystal for a processing apparatus that cuts a crystal, the processing apparatus including a cutting tool and a carrier film, the method comprising: The crystal is provided with a front surface and a back surface which are oppositely arranged, a first protective layer bonded by wax is arranged on the front surface of the crystal, and a second protective layer bonded by wax is arranged on the back surface of the crystal to form a cut unit; bonding the cut unit on the carrier film, and enabling the carrier film to be positioned on the back surface of the cut unit; placing the carrier film adhered with the cut unit on the processing equipment, and controlling the cutting tool to cut the cut unit to form cutting particles; and removing the carrier film and the protective layer on the cut particles to form crystal particles.
2. The method of processing a crystal according to claim 1, wherein the step of forming the cut unit includes the steps of providing a first protective layer bonded with wax on a front surface of the crystal, providing a second protective layer bonded with wax on a back surface of the crystal: heating the first protective layer and the second protective layer to a first temperature, and respectively smearing wax on one surfaces of the first protective layer and the second protective layer; Placing the back surface of the crystal on one surface of the second protective layer coated with the wax so as to bond the back surface of the crystal on the second protective layer; and (3) coating one surface of the wax on the first protective layer to be placed on the front surface of the crystal so as to bond the first protective layer on the front surface of the crystal to form the cut unit.
3. The method of processing crystals as set forth in claim 2, wherein the step of removing the carrier film and the protective layer on the dicing pellets comprises: Placing the cut particles in an ultraviolet environment to remove the carrier film on the cut particles; And heating the cut particles from which the carrier film is removed to the first temperature to remove the protective layer on the cut particles.
4. A method of processing crystals as set forth in claim 3, wherein the first temperature is equal to or higher than the melting point of the wax.
5. The method of processing a crystal according to any one of claims 1 to 4, wherein the first protective layer comprises a glass sheet or a silicon sheet, and the second protective layer comprises a glass sheet or a silicon sheet.
6. The method according to any one of claims 1 to 4, wherein the carrier film comprises a UV film having an adhesive on a side carrying the cut unit, the cut unit being capable of being adhered to the UV film.
7. The method according to any one of claims 1 to 4, wherein the cutting edge of the cutting tool is located on a side of the upper surface of the protective layer on the back surface of the crystal away from the cut unit, the cutting edge of the cutting tool is spaced from the upper surface of the protective layer on the back surface of the crystal by a distance H1, and the H1 is 0.1 mm or more and 0.2 mm or less.
8. The method of processing a crystal according to any one of claims 1 to 4, wherein the step of cutting the cut unit to form cut particles includes: obtaining cutting parameters, wherein the cutting parameters comprise the rotating speed of a cutting tool, the feeding speed of the cutting tool and the position of a tool tip of the cutting tool; and controlling the cutting tool to cut the cut unit based on the cutting parameters so as to form cut particles.
9. A method of processing crystals according to any one of claims 1 to 4, wherein the crystals comprise yttrium vanadate crystals.
10. The method for processing a crystal according to any one of claims 1 to 4, characterized in that before the step of cutting the unit to be cut, the method for processing a crystal further comprises: and controlling the processing equipment to vacuumize.

Description

Crystal processing method Technical Field The invention relates to the technical field of crystal processing, in particular to a crystal processing method. Background The hard and brittle optical crystal in the prior art has extremely sensitive defects such as surface finish, edge breakage, microcracks and the like after cutting. When the material is cut by a grinding wheel dicing machine, the crystal has serious edge breakage and cracks, and the conventional dicing process cannot meet the quality requirement, so that the crystal material has great limitation on subsequent application. Therefore, there is a need for a method of processing crystals that can solve the problems of large cutting edge breakage, many cracks, and low product processing yield when cutting crystals. Disclosure of Invention The application provides a processing method for solving the problems of large cutting edge breakage, multiple cracks and low product processing yield when cutting crystals. To this end, a first object of the present application is to provide a method for processing crystals. In view of this, an embodiment of the first aspect of the present application provides a method of processing a crystal for a processing apparatus that cuts the crystal, the processing apparatus including a cutting tool and a carrier film, the method including the crystal having a front surface and a back surface that are disposed opposite to each other, a first protective layer that is bonded with wax being disposed on the front surface of the crystal, a second protective layer that is bonded with wax being disposed on the back surface of the crystal to form a cut unit, bonding the cut unit to the carrier film with the carrier film being disposed on the back surface of the cut unit, placing the carrier film with the cut unit bonded thereto on the processing apparatus, controlling the cutting tool to cut the cut unit to form cut particles, and removing the carrier film and the protective layer on the cut particles to form crystal particles. In this solution, a processing method, which is specific for cutting brittle crystals, is carried out by means of a processing device comprising a cutting tool and a carrier film. The crystal has a front side and a back side. A first protective layer is firmly adhered to the front side of the crystal by a temporary adhesive such as wax, and a second protective layer is adhered to the back side of the crystal by wax. In this way, the crystal is combined with the protective layers on both sides by wax into a firm composite, called "cut unit", which corresponds to the wearing of protective armor for the fragile crystal. Next, the cut unit needs to be fixed to a stage for cutting by attaching the back side of the cut unit (i.e., the side of the second protective layer facing outward) to the carrier film. This fixed whole is then placed on the table of the processing equipment. And an actuating device for cutting the cut unit according to a set path by a cutting tool, such as a diamond wire saw or a blade. After cutting, the original unitary crystal and protective layer is divided into a plurality of small pieces, each of which contains crystal particles and protective layer material surrounding it, these small units being referred to as "cut particles". In the last step, the cut particles need to be removed from the carrier film and the first and second protective layers attached to the crystal particles are peeled off, resulting in individual, clean crystal particles. By providing wax bonded protective layers on both sides of the crystal, a strong support structure is created that can significantly enhance the fracture resistance of the crystal during cutting. Compared with the traditional method for directly fixing and cutting bare crystals, the method can effectively disperse and buffer cutting stress, and greatly reduce edge chipping, cracking or internal microcracking generated during cutting of the crystals, thereby directly improving the processing yield and geometric integrity of crystal particles. In any of the above technical solutions, optionally, a first protection layer bonded with wax is disposed on the front surface of the crystal, a second protection layer bonded with wax is disposed on the back surface of the crystal, and the step of forming the cut unit includes heating the first protection layer and the second protection layer to a first temperature, respectively coating the wax on one surface of the first protection layer and one surface of the second protection layer, respectively, placing the back surface of the crystal on one surface of the second protection layer coated with wax to bond the back surface of the crystal on the second protection layer, and placing one surface of the first protection layer coated with wax on the front surface of the crystal to bond the first protection layer on the front surface of the crystal to form the cut unit. In the technical scheme, the prepared firs