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CN-121990517-A - MEMS integrated micro-actuator system and manufacturing method thereof

CN121990517ACN 121990517 ACN121990517 ACN 121990517ACN-121990517-A

Abstract

The invention provides an MEMS integrated micro-actuator system and a manufacturing method thereof, belonging to the technical field of micro-electromechanical systems. The MEMS integrated micro-actuator system comprises a custom substrate and an MEMS micro-actuator, wherein the custom substrate comprises a CMOS driving circuit layer, the MEMS micro-actuator is formed on the custom substrate and comprises a substrate, a buffer layer lamination layer, a bottom electrode, an electromechanical driving layer and a top electrode which are sequentially formed on the substrate, a cavity structure is formed on one side, far away from the buffer layer lamination layer, of the substrate, the CMOS driving circuit layer is vertically interconnected with the MEMS micro-actuator, and the CMOS driving circuit layer is used for driving the MEMS micro-actuator to move through voltage applied between the bottom electrode and the top electrode.

Inventors

  • YAN BIAO
  • XIE JING
  • XING JIANPENG
  • LI CHAOBO

Assignees

  • 中国科学院微电子研究所

Dates

Publication Date
20260508
Application Date
20251024

Claims (10)

  1. 1.A MEMS integrated micro-actuator system, comprising: a custom substrate (11), the custom substrate (11) comprising a CMOS drive circuit layer, and A MEMS micro-actuator formed on the custom substrate (11), the MEMS micro-actuator comprising: A substrate (1); A buffer layer laminated layer (2), a bottom electrode (3), an electromechanical driving layer (4) and a top electrode (5) which are sequentially formed on the substrate (1), wherein a cavity structure is formed on one side of the substrate (1) far away from the buffer layer laminated layer (2); Wherein the CMOS drive circuit layer is vertically interconnected with the MEMS micro-actuator, and the CMOS drive circuit layer is used for driving the MEMS micro-actuator to move through a voltage applied between the bottom electrode (3) and the top electrode (5).
  2. 2. The MEMS integrated micro-actuator system of claim 1 wherein the buffer layer stack (2) comprises, in order from bottom to top, an interfacial adhesion layer, a lattice matching layer, a stress buffer layer; The interface adhesion layer is made of at least one of titanium, chromium, tantalum, titanium tungsten and titanium nitrogen; The material of the lattice matching layer comprises at least one of strontium titanate, magnesium oxide, cerium oxide and yttria-stabilized zirconia; The stress buffer layer is made of at least one of lanthanum nickelate, silicon nitride, silicon dioxide and aluminum oxide.
  3. 3. The MEMS integrated micro-actuator system according to claim 1, wherein the substrate (1) comprises, in order from bottom to top, a bottom silicon (101), a silicon-on-insulator (102) and a top silicon (3); the MEMS integrated micro-actuator system further comprises: And a bonding layer (7) positioned between the custom substrate (11) and the MEMS micro-actuator so as to realize eutectic bonding between the custom substrate (11) and the MEMS micro-actuator.
  4. 4. The MEMS integrated micro-actuator system according to claim 1, wherein the substrate (1) is a silicon layer, the substrate (1) having a through recess formed thereon; the MEMS integrated micro-actuator system further comprises: and the filling metal (13) is filled in the groove, so that the CMOS driving circuit layer of the custom substrate (11) and the electromechanical driving layer (4) of the MEMS micro-actuator are electrically interconnected through the filling metal (13).
  5. 5. A method of fabricating a MEMS integrated micro-actuator system according to any one of claims 1-3, comprising: manufacturing MEMS micro-actuator, and And performing eutectic bonding on the MEMS micro-actuator and the CMOS driving circuit layer of the custom substrate (11) to form the MEMS integrated micro-actuator system.
  6. 6. The method of fabricating of claim 5, wherein fabricating the MEMS micro-actuator comprises: Providing a substrate (1), wherein the substrate (1) comprises bottom silicon (101), insulating silicon (102) and top silicon (103) from bottom to top in sequence; Sequentially forming a buffer layer stack (2), a bottom electrode (3), an electromechanical driving layer (4) and a top electrode (5) on the substrate; patterning the top electrode (5) and the electromechanical driving layer (4) respectively to expose the electromechanical driving layer (4) and the bottom electrode (3) to form a top electrode interface and a bottom electrode interface; Etching a side of the substrate remote from the buffer layer stack (2) to form a cavity structure; and depositing a first insulating layer (61) on one side of the substrate close to the buffer layer lamination (2) and depositing a second insulating layer (62) on one side of the substrate far away from the buffer layer lamination (2) to form the MEMS micro-actuator.
  7. 7. The method of manufacturing according to claim 5, wherein eutectic bonding the MEMS micro-actuator to the CMOS drive circuitry layer of the custom substrate (11) comprises: Forming a first bonding metal on the surface of the custom substrate (11); forming a second bonding metal on the surface of the substrate of the MEMS micro-actuator; Aligning the first bonding metal with the second bonding metal, and enabling the MEMS micro-actuator and a CMOS driving circuit layer of a custom substrate (11) to be subjected to eutectic bonding through the first bonding metal and the second bonding metal under a preset temperature and a preset pressure; Wherein, the metal pair adopted by the first bonding metal and the second bonding metal comprises one of Au-Sn, au-Si, cu-Sn, in-Sn and Au-Ge; preferably, the CMOS driving circuit layer includes a memory cell and a driving circuit; Eutectic bonding the MEMS micro-actuator to the CMOS drive circuitry layer of the custom substrate comprises: and performing eutectic bonding on the MEMS micro-actuator and the storage unit.
  8. 8. The method of manufacturing according to claim 5, further comprising: after eutectic bonding the MEMS micro-actuator to the CMOS drive circuitry layer of the custom substrate, wafer level packaging is performed on the MEMS integrated micro-actuator system.
  9. 9. The method of manufacturing of claim 8, wherein performing wafer level packaging comprises: Providing a cap wafer, wherein the cap wafer is formed with at least one accommodating space, and the depth of the accommodating space is larger than the height of the MEMS integrated micro-actuator system; accurately aligning the receiving space of the cap wafer with the MEMS integrated micro-actuator system by using an infrared alignment system, realizing pre-bonding by applying pressure, and Thermocompression bonding the cap wafer and the wafer including at least one of the MEMS integrated micro-actuator systems under a vacuum environment.
  10. 10. A method of fabricating a MEMS integrated micro-actuator system according to any one of claims 1-2, 4, comprising: Providing a custom substrate (11), the custom substrate (11) comprising a CMOS drive circuitry layer having memory cells and drive circuitry; Depositing a substrate (1) on the custom substrate (11) and forming a plurality of grooves on the substrate (1) using a patterning process; filling a sacrificial layer (12) in the groove so that the sacrificial layer (12) is flush with the substrate (1); Sequentially depositing a buffer layer stack (2), a bottom electrode (3), an electromechanical driving layer (4) and a top electrode (5) on a substrate (1) filled with a sacrificial layer (12), and releasing the sacrificial layer (12) through patterning; patterning the top electrode (5) to expose the electro-mechanical actuation layer (4), and Sequentially etching the electromechanical driving layer (4) and the bottom electrode (3) to expose an interconnection interface of the bottom electrode, and placing filling metal (13) in the interconnection interface to realize vertical interconnection between the electromechanical driving layer (4) and the CMOS driving circuit layer so as to form an MEMS integrated micro-actuator system; Preferably, the material of the sacrificial layer (12) comprises one of silicon dioxide, silicon nitride, titanium nitride, polysilicon, germanium, polyimide, zinc oxide; The method of releasing the sacrificial layer (12) by patterning includes wet etching or dry etching.

Description

MEMS integrated micro-actuator system and manufacturing method thereof Technical Field At least one embodiment of the invention relates to microelectromechanical systems, and more particularly to a MEMS integrated micro-actuator system and method of making the same. Background Micro-Electro-MECHANICAL SYSTEMS, MEMS (Micro-Electro-MECHANICAL SYSTEMS, MEMS) technology is one of the important development directions in the current Micro-nano manufacturing field, and is widely applied to various fields such as communication, biomedicine, aerospace, intelligent wearing, automatic control and the like. The MEMS micro-actuator is used as a key component in an MEMS system and is mainly used for realizing signal conversion and output, such as electric-mechanical conversion, optical-mechanical conversion and the like, and the performance of the MEMS micro-actuator directly influences the response speed, control precision and function integration level of the whole system. At present, the common MEMS micro-actuator mainly has a piezoelectric, capacitive or thermally driven structure, and although some developments in functionality are made, many technical bottlenecks still exist in practical application. For example, the conventional MEMS micro-actuator is often designed separately from the memory unit and the circuit control module, and functional coupling needs to be implemented through subsequent packaging, which not only increases the system volume and power consumption, but also reduces the transmission efficiency and response speed. Particularly in application scenarios where high-density integration is required, such as intelligent microsystems, system on a Chip (SoC), or microsystems on a Chip (SoMEMS), the separation structure is difficult to meet key requirements of miniaturization, integration, high reliability, and the like. Disclosure of Invention In view of the above, the present invention provides a MEMS integrated micro-actuator system and a method for manufacturing the same, so as to at least partially solve the above-mentioned technical problems. According to an embodiment of one aspect of the present invention, there is provided a MEMS integrated micro-actuator system comprising: The MEMS micro-actuator comprises a substrate, a buffer layer lamination layer, a bottom electrode, an electromechanical driving layer and a top electrode which are sequentially formed on the substrate, wherein a cavity structure is formed on one side of the substrate far away from the buffer layer lamination layer, the CMOS driving circuit layer is vertically interconnected with the MEMS micro-actuator, and the CMOS driving circuit layer is used for driving the MEMS micro-actuator to move through voltage applied between the bottom electrode and the top electrode. According to an embodiment of another aspect of the present invention, there is provided a method for manufacturing a MEMS integrated micro-actuator system, including: manufacturing MEMS micro-actuator, and And performing eutectic bonding on the MEMS micro-actuator and the CMOS driving circuit layer of the custom substrate to form the MEMS integrated micro-actuator system. According to an embodiment of another aspect of the present invention, there is provided a method for manufacturing a MEMS integrated micro-actuator system, including: Providing a custom substrate comprising a CMOS drive circuitry layer having memory cells and drive circuitry; Depositing a substrate on the custom substrate, and forming a plurality of grooves on the substrate by adopting a patterning process; Filling a sacrificial layer in the groove so that the sacrificial layer is flush with the substrate; sequentially depositing a buffer layer lamination layer, a bottom electrode, an electromechanical driving layer and a top electrode on the substrate filled with the sacrificial layer, and releasing the sacrificial layer through graphical etching; Patterning the top electrode to expose the electro-mechanical driving layer, and And etching the electromechanical driving layer and the bottom electrode in sequence to expose an interconnection interface of the bottom electrode, and placing filling metal in the interconnection interface to realize vertical interconnection between the electromechanical driving layer and the CMOS driving circuit layer so as to form the MEMS integrated micro-actuator system. According to the MEMS integrated micro-actuator system provided by the embodiment of the invention, after the MEMS micro-actuator is vertically integrated with the CMOS driving circuit, the electrode of the MEMS micro-actuator is directly connected with the input/output node of the CMOS circuit, so that the signal transmission distance is shortened, parasitic capacitance and inductance are reduced, signal attenuation and distortion are avoided, the system volume is obviously reduced, and the compactness and the signal coupling efficiency of the system are improved. According to the manufacturing met