CN-121990519-A - Reconstruction type stepping micro-nano device based on heterojunction ultra-sliding interface and driving method

CN121990519ACN 121990519 ACN121990519 ACN 121990519ACN-121990519-A

Abstract

The invention provides a restructured stepping micro-nano device based on a heterojunction super-slip interface and a driving method, and relates to the technical field of micro-nano electromechanical systems (MEMS/NEMS), wherein the stator assembly comprises an insulating substrate, a buried layer electrode group arranged in the insulating substrate and a two-dimensional material dielectric layer covered above the buried layer electrode group, the slider assembly comprises a metal slider arranged on the surface of the two-dimensional material dielectric layer, the material of the metal slider is different from that of the two-dimensional material dielectric layer, the contact surfaces of the metal slider and the two-dimensional material dielectric layer form the heterojunction super-slip interface, the heterojunction super-slip interface has periodic stick-slip characteristics, and the metal slider is configured to perform discrete stepping motion along the surface of the two-dimensional material dielectric layer under the action of an electrostatic field generated by the buried layer electrode group.

Inventors

CHEN WEIPENG
WU TIELIN
LI CHAO
XIANG XIAOJIAN
ZHENG QUANSHUI

Assignees

深圳清华大学研究院
清华大学深圳国际研究生院

Dates

Publication Date: 20260508
Application Date: 20260130

Claims (10)

1. The reconfigurable stepping micro-nano device based on the heterojunction ultra-smooth interface is characterized by comprising: the stator assembly comprises an insulating substrate, a buried layer electrode group arranged in the insulating substrate and a two-dimensional material dielectric layer covering the buried layer electrode group; a slider assembly comprising a metallic slider disposed on a surface of the two-dimensional material dielectric layer; the heterojunction super-slip interface is provided with periodic stick-slip characteristics, and the metal sliding block is configured to perform discrete step-by-step movement along the surface of the two-dimensional material dielectric layer under the action of an electrostatic field generated by the buried layer electrode group; The stepping micro-nano device further comprises a control unit, wherein the control unit is electrically connected with the buried layer electrode group and is used for outputting control voltage to adjust single stepping displacement of the metal sliding block and control the movement direction of the metal sliding block.
2. The heterojunction ultra-sliding interface-based reconfigurable step micro-nano device according to claim 1, wherein the buried layer electrode group comprises at least three electrodes which are arranged in a coplanar manner, namely a first side electrode, a second side electrode and an intermediate driving electrode positioned between the first side electrode and the second side electrode; the first side electrode and the second side electrode are used for forming an electrostatic potential well at the metal sliding block when bias voltage difference is applied, so that an equivalent transverse stiffness adjustable electro-spring is provided; the intermediate driving electrode is used for generating electrostatic driving force to the metal sliding block when a driving signal is applied.
3. The reconfigurable step micro-nano device based on a heterojunction super-slip interface as claimed in claim 2, wherein said heterojunction super-slip interface has a maximum static friction of non-zero And kinetic friction force And static friction force Dynamic friction force ; The equivalent transverse stiffness of the electro-active spring is that Single step displacement of the metal sliding block Maximum static friction force of super-sliding interface of heterojunction With dynamic friction force Difference and equivalent transverse stiffness Ratio determination of (2), i.e 。
4. The heterojunction ultra-sliding interface-based reconstituted stepping micro-nano device according to claim 1, wherein the metal slider is a single crystal gold micro-slider, and the two-dimensional material dielectric layer is one of single crystal graphite, molybdenum disulfide (MoS 2) or hexagonal boron nitride (h-BN).
5. The heterojunction ultra-sliding interface-based reconstructed stepping micro-nano device according to claim 1, wherein the surface of the stator assembly is further provided with a functional electrode layer along the movement path of the metal sliding block; The functional electrode layer comprises a plurality of spatially separated functional blocks, and the metal sliding block is fixedly provided with conductive functional probes which are stopped at different functional block positions through stepping motion so as to reconstruct the electrical functions of the stepping micro-nano device.
6. The reconfigurable stepping micro-nano device based on the heterojunction ultra-smooth interface according to claim 5, wherein the functional block comprises any one of a radio-frequency capacitor plate, a logic circuit contact or an optical switch coupling grating; When the stepping micro-nano device is configured as a tunable radio frequency device, the functional electrode layer comprises a plurality of radio frequency capacitor plates with different heights or areas, and the coupling capacitance value is changed when the metal sliding block moves above the different radio frequency capacitor plates; when the stepping micro-nano device is configured as a physical logic switch, the functional electrode layer comprises disconnected logic circuit contacts, and the metal sliding block is used as a conductive bridge to connect different logic circuit contacts so as to change the circuit topology.
7. The reconfigurable stepping micro-nano device based on the heterojunction ultra-sliding interface according to claim 1, wherein the metal slider is kept at a current position by means of an interface pinning effect of the heterojunction ultra-sliding interface after the voltage of the buried electrode group is removed, so that passive self-locking is achieved.
8. The method for driving the reconstructed step micro-nano device based on the heterojunction ultra-sliding interface is characterized by being applied to the step micro-nano device based on the heterojunction ultra-sliding interface as set forth in any one of claims 1-7, and comprises the following steps: s10, initializing a stepping micro-nano device, and determining the initial position of a metal sliding block on a heterojunction ultra-sliding interface; s20, setting rigidity, namely applying bias voltage difference to two side electrodes in a buried layer electrode group to form a potential well below the metal sliding block, wherein the potential well provides equivalent transverse rigidity for the stepping micro-nano device ; S30, a driving sliding step, namely enabling the metal sliding block to receive electrostatic driving force by applying a driving voltage which changes along with time to an intermediate driving electrode in the buried electrode group, wherein when the electrostatic driving force is larger than the maximum static friction force of the heterojunction super-sliding interface When the metal slide block slides; S40, realizing the step of stepping, namely after the metal sliding block slides, enabling the interface friction force to be received by the metal sliding block to be from the maximum static friction force Is converted into kinetic friction force The metal sliding block moves by a single step displacement After that, stop, single step displacement By maximum static friction force With dynamic friction force Difference and equivalent transverse stiffness Is determined by the ratio of (2); S50, a position self-locking step of withdrawing the driving voltage applied to the intermediate driving electrode, wherein the electrostatic driving force disappears at the moment, and the maximum static friction force of the metal sliding block on the heterojunction super-sliding interface is achieved Is pinned at the current position under the action of the pin, and realizes passive self-locking.
9. The method for driving a reconfigurable step micro-nano device based on a heterojunction ultra-slip interface as claimed in claim 8, wherein in said step S20, the equivalent lateral stiffness is changed by adjusting the bias voltage difference applied to the two side electrodes Realizing single stepping displacement of the metal sliding block Is adjustable accurately and dynamically; In the step S30, the driving voltage is a pulse voltage or an asymmetric ac voltage, and the magnitude, frequency or duty ratio of the driving voltage is controlled to precisely control the electrostatic driving force applied to the metal slider.
10. The method for driving a reconfigurable step micro-nano device based on a heterojunction ultra-slip interface according to claim 8, wherein in the step S40, the single step displacement is Maximum static friction force Kinetic friction force Equivalent transverse stiffness The following relationship is satisfied: 。

Description

Reconstruction type stepping micro-nano device based on heterojunction ultra-sliding interface and driving method Technical Field The invention relates to the technical field of micro-nano electromechanical systems (MEMS/NEMS), in particular to a reconstruction stepping micro-nano device based on a heterojunction ultra-smooth interface and a driving method. Background In the development process of micro-nano electromechanical systems (MEMS/NEMS), the reconfigurability of the device is a core key for breaking through single function limitation and realizing intelligent response and multi-scene adaptation. Through reconfigurable design, the micro-nano device can dynamically adjust structural form and working mode according to working requirements, and provides brand new possibility for the front-edge fields of high-precision sensing, precise positioning, micro-nano operation and the like. The ultra-smooth (Structural Superlubricity) structure technology can reduce the friction coefficient to below 10 -6 by virtue of the characteristic of nearly zero friction at the micro-nano scale, and simultaneously has the remarkable advantage of zero abrasion, so that the bottleneck problems of service life shortening, performance attenuation and the like caused by friction abrasion of the traditional micro-nano device are fundamentally solved, and the ultra-smooth structure technology is accepted by academia and industry as an ideal technical path for constructing the next-generation long-service-life high-performance micro-nano electromechanical device. However, despite the great potential of the structure super-slip technology, the micro-nano device developed based on the technology (such as graphite/graphite homojunction structure typically) still has two core defects which are difficult to ignore, and severely restricts the progress of the technology from a laboratory to practical application: 1. The lack of reliable position retention-the core advantage of structural superslip results from extremely low friction between layers or interfaces, which also becomes a natural short plate of position stability. Taking graphite/graphite homojunction as an example, the interlayer Van der Waals force is weak and no obvious mechanical locking structure exists, so that uncontrollable position drift of the sliding block is easy to occur even if the sliding block is affected by weak external disturbance or internal thermal noise in a non-working state. The thermal noise is derived from thermal motion of particles under micro-nano scale, and can generate significant driving force for the light and small sliding blocks in normal temperature environment, and weak vibration (such as low-frequency vibration, air disturbance and the like of equipment operation) in the environment can easily overcome friction resistance which is almost zero even if the amplitude is only nano-scale, so that the sliding blocks deviate from preset positions. More importantly, the device generally lacks an effective self-locking mechanism, and the sliding block cannot be stably fixed at a target position after the driving is stopped, so that the problems of lost positioning precision, disordered storage state and the like are caused, and the reliability of the device in a static working scene or an intermittent working mode is greatly influenced. 2. The driving control mode is limited to analog quantity, and high-precision stepping control is difficult to realize, namely the traditional device based on the structure super-sliding technology is mostly dependent on continuous adjustable electrostatic field dragging, namely continuous movement regulation and control of the sliding block are realized by changing the electrostatic field intensity. The analog quantity driving mode has the essential limitations that on one hand, quantized 'stepping' motion with precisely controllable step length cannot be realized, the motion process is in a continuous smooth state and is difficult to precisely position to a discrete target position, on the other hand, the precision of step length adjustment is greatly influenced by factors such as electrostatic field intensity fluctuation, interface charge accumulation and the like, the stability is poor, and the severe requirements of the precise positioning field on nano-level step length, even sub-nano-level step length and high repeatability cannot be met. The defect makes the structure super-smooth device difficult to exert the advantages of low friction and long service life in the key fields of semiconductor manufacture, biological cell operation, quantum sensing and the like, which need high-precision positioning and regulation, and the application scene is greatly limited. Disclosure of Invention In order to overcome the defects of the prior art, the invention provides a reconstruction type stepping micro-nano device based on a heterojunction ultra-sliding interface and a driving method thereof, which utilizes the charac