Search

CN-121990526-A - Two-dimensional transition metal dichalcogenide nanometer roll and preparation method and application thereof

CN121990526ACN 121990526 ACN121990526 ACN 121990526ACN-121990526-A

Abstract

The invention relates to a two-dimensional transition metal dichalcogenide nanometer roll, a preparation method and application thereof. The method comprises the steps of providing a metal substrate, forming a two-dimensional transition metal dichalcogenide compound strip on the surface of the metal substrate, forming an organic protective layer on the surface of the two-dimensional transition metal dichalcogenide compound strip, removing the metal substrate, transferring the two-dimensional transition metal dichalcogenide compound strip with the organic protective layer onto a target substrate, soaking the two-dimensional transition metal dichalcogenide compound strip with the organic protective layer in a high-polarity organic solution, taking out, and quickly drying to curl the two-dimensional transition metal dichalcogenide compound strip to obtain the two-dimensional transition metal dichalcogenide compound nano-volume. The invention also provides application of the nano-roll in a nonlinear optical device. The method is simple and convenient, has strong universality, simple and convenient technological operation, short flow and easy popularization.

Inventors

  • WANG HONGLIN
  • ZHU HONGWEI

Assignees

  • 清华大学

Dates

Publication Date
20260508
Application Date
20251231

Claims (10)

  1. 1. A preparation method of a two-dimensional transition metal dichalcogenide nanometer volume comprises the following steps: (1) Providing a metal substrate, and forming a two-dimensional transition metal dichalcogenide compound strip on the surface of the metal substrate; (2) Forming an organic protective layer on the surface of the two-dimensional transition metal dichalcogenide compound strip, removing the metal substrate, and transferring the two-dimensional transition metal dichalcogenide compound strip with the organic protective layer onto a target substrate; (3) Soaking the two-dimensional transition metal dichalcogenide compound strip with the organic protective layer in a high-polarity organic solution, taking out and drying quickly, and curling the two-dimensional transition metal dichalcogenide compound strip to obtain the two-dimensional transition metal dichalcogenide compound nano-coil.
  2. 2. The production method according to claim 1, wherein in step (1), the thickness of the two-dimensional transition metal dichalcogenide strip is 10nm or less.
  3. 3. The production method according to claim 1, wherein, in the step (1), the transition metal in the two-dimensional transition metal dichalcogenide is selected from one or a combination of two or more kinds of Pt, pd, mo, W; The chalcogenides are selected from one or more than two of S, se and Te.
  4. 4. The production method according to claim 1, wherein, in step (1), the two-dimensional transition metal dichalcogenide stripes are formed by a chemical vapor deposition method; Preferably, the chemical vapor deposition conditions comprise a growth temperature of 400-950 ℃ and a heat preservation time of 5-20 min; The carrier gas is a mixed gas of hydrogen and argon or a mixed gas of hydrogen and nitrogen, wherein the flow rate of the hydrogen is 5-20 mL/min, and the flow rate of the argon or nitrogen is 50-200 mL/min; during growth, the chalcogenide source is heated above 50 ℃ above the melting point.
  5. 5. The method according to claim 1, wherein in the step (2), the material of the organic protective layer is one or a combination of two or more selected from polymethyl methacrylate, polycarbonate, polystyrene and polyvinyl alcohol; Preferably, the organic material is spin-coated at a spin speed of 200-2000rpm for 10-180 s and heated at 70-150 ℃ for 5-10 min to cure, according to a coating amount of 1-50 μl/cm 2 , to obtain an organic protective layer.
  6. 6. The production method according to claim 1, wherein in the step (2), the target substrate is selected from one or a combination of two or more of a silicon-on-insulator substrate, a silicon oxide substrate, a sapphire substrate, and a glass substrate.
  7. 7. The production method according to claim 1, wherein the high-polarity organic solvent comprises one or a combination of two or more of acetic acid, methanol, dimethylformamide; Preferably, the soaking time is 30-50 min; Preferably, the temperature of the highly polar organic solvent is 50-70 ℃.
  8. 8. The method of claim 1, wherein the blow-drying time is 1-2 s.
  9. 9. A two-dimensional transition metal dichalcogenide nanovolume prepared by the method of any one of claims 1-8.
  10. 10. Use of the two-dimensional transition metal dichalcogenide nanoroll of claim 9 in a nonlinear optical device.

Description

Two-dimensional transition metal dichalcogenide nanometer roll and preparation method and application thereof Technical Field The invention relates to a two-dimensional transition metal dichalcogenide nanometer roll and a preparation method and application thereof, and belongs to the technical field of nanometer roll preparation. Background Two-dimensional Transition Metal Dichalcogenide (TMD) nanorolls are novel nanostructures assembled from two-dimensional TMD crimps. The TMD nano-coil has the advantages of keeping excellent performances such as catalytic activity, mechanical flexibility and the like of a two-dimensional TMD material, and simultaneously has novel characteristics such as unique energy band structure, diamagnetism, stability, nonlinear optical performance caused by one-dimensional geometric configuration and the like. For example, cui et al （Cui, X., Kong, Z., Gao, E. et al. Rolling up transition metal dichalcogenide nanoscrolls via one drop of ethanol. Nat Commun. 2018, 9, 1301） prepared high stability MoS 2 nanorolls by dropping ethanol solution into MoS 2 nanosheets. Kaneda et al （Kaneda, M.; Zhang, W.; Bi, D.; et al. Tunable-diameter nanoscrolls from janus WSSe/WSe2 heterostructures. ACS Nano. 2025, 19, 34918） processed WSSe nanoplatelets by solution methods to give WSSe nanorolls with anisotropic optical response. However, current research on the preparation of TMD nanoroll materials is still limited by the size, arrangement and material source of the nanorolls. On one hand, most of TMD nano-roll materials are formed by stripped or grown TMD nano-sheets, the transverse dimension is limited, the length-diameter ratio is 10 2 -103, and the arrangement is often disordered and uncontrollable, so that the TMD nano-roll is not beneficial to the application of the TMD nano-roll in electric and optical devices. On the other hand, most of TMD nanoroll materials are derived from two-dimensional materials grown directly on nonmetallic substrates, and two-dimensional TMDs that rely on metallic substrates to achieve high quality growth, such as platinum diselenide (PtSe 2), have been rarely studied in the nanoroll field. The TMD material on the metal substrate can be grown into a TMD strip array with high length-to-width ratio and high density by attaching to atomic-level steps, and the TMD strip array has great potential for overcoming the limitation of the nano-roll material in the aspect ratio, the arrangement state, the material source and the like. Thus, there is a need for a method of converting TMD strips on a metal substrate into high aspect ratio, aligned TMD nanorolls. Disclosure of Invention In order to solve the technical problems, the invention aims to provide a preparation method of a two-dimensional transition metal dichalcogenide nanometer roll, which is simple and convenient to operate and short in flow, and widens the material source of the nanometer roll. In order to achieve the above purpose, the present invention provides a method for preparing a two-dimensional transition metal dichalcogenide nanometer roll, comprising the following steps: (1) Providing a metal substrate, and forming a two-dimensional transition metal dichalcogenide compound strip on the surface of the metal substrate; (2) Forming an organic protective layer on the surface of the two-dimensional transition metal dichalcogenide compound strip, removing the metal substrate, and transferring the two-dimensional transition metal dichalcogenide compound strip with the organic protective layer onto a target substrate; (3) Soaking the two-dimensional transition metal dichalcogenide compound strip with the organic protective layer in a high-polarity organic solution, taking out and drying quickly, and curling the two-dimensional transition metal dichalcogenide compound strip to obtain the two-dimensional transition metal dichalcogenide compound nano-coil. According to a specific embodiment of the present invention, preferably, in step (1), the thickness of the two-dimensional transition metal dichalcogenide strip is 10nm or less. According to a specific embodiment of the present invention, preferably, in the step (1), the two-dimensional transition metal dichalcogenide stripe is a few-layer stripe, and the number of layers may be 1-10 layers. According to a specific embodiment of the present invention, preferably, in step (1), the transition metal in the two-dimensional transition metal dichalcogenide is selected from one or a combination of two or more of Pt, pd, mo, W; The chalcogenides are selected from one or more than two of S, se and Te. According to a specific embodiment of the present invention, preferably, in step (1), the two-dimensional transition metal dichalcogenide strips are formed by a chemical vapor deposition method; More preferably, the conditions of the chemical vapor deposition include: The growth temperature is 400-950 ℃ and the heat preservation time is 5-20 min; The carrier gas is a mixed gas o