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CN-121990615-A - Co (cobalt)3O4/In2O3Preparation method and application of heterostructure

CN121990615ACN 121990615 ACN121990615 ACN 121990615ACN-121990615-A

Abstract

The application discloses a preparation method and application of a Co 3 O 4 /In 2 O 3 heterostructure, wherein the preparation method at least comprises the following steps of grinding, mixing and calcining Co 3 O 4 and In 2 O 3 powder to obtain the Co 3 O 4 /In 2 O 3 heterostructure. According to the application, co 3 O 4 and In 2 O 3 are firstly physically mixed by adopting a mechanical grinding method, and further, the mixed Co 3 O 4 /In 2 O 3 is calcined at high temperature, and under the induction of heat, co 3 O 4 and In 2 O 3 interact to form a heterostructure. And preparing the Co 3 O 4 /In 2 O 3 heterostructure-based hydrogen sensor by taking the Co 3 O 4 /In 2 O 3 heterostructure as a gas sensing film. In the hydrogen sensing detection, the response value of the Co 3 O 4 /In 2 O 3 heterostructure-based hydrogen sensor to 10ppm hydrogen at 200 ℃ can reach 100, and the defect of poor hydrogen sensing performance is overcome.

Inventors

  • FENG LIANG
  • HE JIANWANG
  • MENG HU

Assignees

  • 中国科学院大连化学物理研究所

Dates

Publication Date
20260508
Application Date
20241105

Claims (9)

  1. 1. The preparation method of the Co 3 O 4 /In 2 O 3 heterostructure is characterized by at least comprising the following steps: And grinding, mixing and calcining Co 3 O 4 and In 2 O 3 powder to obtain the Co 3 O 4 /In 2 O 3 heterostructure.
  2. 2. The method according to claim 1, wherein the mass ratio of Co 3 O 4 to In 2 O 3 is (0.1 to 30) to 100.
  3. 3. The method of claim 1, wherein the calcining conditions are as follows: The calcination is carried out in an atmosphere of air, nitrogen and argon; The calcining temperature is 200-800 ℃; the calcination time is 0.5-12 hours.
  4. 4. The method of manufacturing according to claim 1, wherein the Co 3 O 4 /In 2 O 3 heterostructure comprises a p-type semiconductor Co 3 O 4 and an n-type semiconductor In 2 O 3 .
  5. 5. The method of claim 1, wherein the Co 3 O 4 /In 2 O 3 heterostructure is in the shape of an octahedral block; The particle size of the Co 3 O 4 /In 2 O 3 heterostructure is 30-300 nm.
  6. 6. The application of the Co 3 O 4 /In 2 O 3 heterostructure in hydrogen sensing is characterized in that a Co 3 O 4 /In 2 O 3 heterostructure-based hydrogen sensor is coated on a substrate, and the temperature is controlled to obtain a Co 3 O 4 /In 2 O 3 heterostructure-based hydrogen sensor; The Co 3 O 4 /In 2 O 3 heterostructure is prepared by the preparation method of any one of claims 1-5.
  7. 7. The use according to claim 6, wherein the substrate is selected from at least one of a ceramic tube, an interdigitated electrode, a planar electrode.
  8. 8. The use according to claim 6, wherein the temperature is 50-3500 ℃.
  9. 9. The use of claim 6, wherein the sensor has a hydrogen detection limit of 50ppb.

Description

Preparation method and application of Co 3O4/In2O3 heterostructure Technical Field The application relates to a preparation method and application of a Co 3O4/In2O3 heterostructure, and belongs to the technical field of gas sensors. Background The world is facing a serious energy shortage. Hydrogen (H 2) is considered as the most attractive renewable energy source of the next generation because of its high conversion efficiency, abundant reserves and no harmful by-products, and has been widely used in various fields such as energy, industry, and electricity. However, there are potential safety problems in the process of storing and using hydrogen, so the detection and monitoring of hydrogen is a key ring for developing hydrogen energy. With the demand for sustainable hydrogen economy, the demand for hydrogen gas sensors is expected to continue to grow. However, the hydrogen sensor using a single semiconductor metal oxide as a sensing film has the limitations of low response, low selectivity, high detection limit, high operating temperature and the like. How to improve the performance of hydrogen gas sensors remains a critical challenge. The construction of semiconductor metal oxide heterostructures is an effective strategy to improve the performance of gas sensors. Typically, the two materials are closely aligned and interact between the interfaces to form a heterostructure. Developing a semiconductor metal oxide heterostructure that is simple to produce, low in cost, and useful for enhancing gas sensing performance is a significant challenge. Disclosure of Invention In order to solve the problems, the invention provides a Co 3O4/In2O3 heterostructure and preparation and application thereof, and the Co 3O4/In2O3 heterostructure-based hydrogen sensor provided by the invention has excellent performance on hydrogen, including high response value, good selectivity, circulation stability and low detection limit, and overcomes the defect of poor performance of the hydrogen sensor. According to one aspect of the application, there is provided a method for preparing a Co 3O4/In2O3 heterostructure, comprising at least the steps of: And grinding, mixing and calcining Co 3O4 and In 2O3 powder to obtain the Co 3O4/In2O3 heterostructure. Optionally, the mass ratio of Co 3O4 to In 2O3 is (0.1-30): 100. Optionally, the conditions of the calcination are as follows: The calcination is carried out in an atmosphere of air, nitrogen and argon; The calcining temperature is 200-800 ℃; the calcination time is 0.5-12 hours. Optionally, the Co 3O4/In2O3 heterostructure includes a p-type semiconductor Co 3O4 and an n-type semiconductor In 2O3. Optionally, the Co 3O4/In2O3 heterostructure is in an octahedral block shape; The particle size of the Co 3O4/In2O3 heterostructure is 30-300 nm. According to another aspect of the application, an application of the Co 3O4/In2O3 heterostructure in hydrogen sensing is provided, a Co 3O4/In2O3 heterostructure-based hydrogen sensor is coated on a substrate, and the temperature is controlled, so that the Co 3O4/In2O3 heterostructure-based hydrogen sensor is obtained. Optionally, the substrate is selected from at least one of a ceramic tube, an interdigital electrode and a planar electrode. Optionally, the temperature is 50-3500 ℃. Optionally, the sensor has a hydrogen detection limit of 50ppb. The application has the beneficial effects that: 1) The preparation process of the Co 3O4/In2O3 heterostructure provided by the application is simple and easy to operate, and the cost is low. 2) The preparation method provided by the application successfully generates a Co 3O4/In2O3 heterostructure under the induction of heat, and promotes the rapid transmission of electrons. 3) The Co 3O4/In2O3 heterostructure-based hydrogen sensor is successfully prepared by the prepared sensing material of the Co 3O4/In2O3 heterostructure, has a high response value to hydrogen, further has excellent selectivity, linear response, circulation stability and low practical detection limit, overcomes the defect of poor performance of the hydrogen sensor, and is beneficial to the vigorous development of the hydrogen energy industry. Drawings FIG. 1 is a scanning electron micrograph of a commercial Co 3O4, a physically mixed Co 3O4/In2O3 powder, a Co 3O4/In2O3 heterostructure and a high resolution transmission electron micrograph of a Co 3O4/In2O3 heterostructure; FIG. 2 is a graph comparing the response values of a hydrogen sensor prepared from commercial Co 3O4, commercial In 2O3、Co3O4/In2O3 mixed powder and Co 3O4/In2O3 heterostructure serving as sensing materials to 10ppm hydrogen at different operating temperatures; FIG. 3 is a graph of gas selectivity measurements for a Co 3O4/In2O3 heterostructure-based hydrogen sensor of the present application; FIG. 4 is a graph of a linear fit of the response of a Co 3O4/In2O3 heterostructure-based hydrogen sensor of the present application to hydrogen at different concentrations; FIG.