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CN-121990824-A - Piezoelectric material, preparation method thereof, piezoelectric device and electronic equipment

CN121990824ACN 121990824 ACN121990824 ACN 121990824ACN-121990824-A

Abstract

The application provides a piezoelectric material, a preparation method thereof, a piezoelectric device and electronic equipment, wherein the chemical general formula of the piezoelectric material comprises ：xPb(Mn 1/2 W 1/2 )O 3 -(1-x)[0.15Pb(Zn 1/3 Nb 2/3 )O3-0.85Pb(Zr 0.5 Ti 0.5 )O 3 ],, wherein x is more than or equal to 0.05 and less than or equal to 0.08. The application adopts a solid-phase synthesis method, and adopts the doped lead tungsten manganate, regulates and controls the parameter range of x and controls the sintering temperature in the synthesis process, preferably adds rare earth elements Yb, er, eu and the like, improves the mechanical quality factor, the electromechanical coupling coefficient, the piezoelectric constant, the dielectric loss, the Young modulus and the like of the prepared piezoelectric material, has simple preparation process and environment-friendly raw materials, and can meet the use requirements of high performance and low power consumption when the piezoelectric material is applied to high-frequency piezoelectric devices and electronic equipment.

Inventors

  • JIN LINFANG
  • WANG YINGXIAN
  • WU RUIKANG
  • CHEN QIU
  • HU JINYAN

Assignees

  • 华为终端有限公司

Dates

Publication Date
20260508
Application Date
20241107

Claims (13)

  1. 1. A piezoelectric material is characterized in that the chemical general formula of the piezoelectric material comprises ：x Pb(Mn 1/2 W 1/2 )O 3 -(1-x)[0.15Pb(Zn 1/3 Nb 2/3 )O 3 -0.85Pb(Zr 0.5 Ti 0.5 )O 3 ],, wherein x is more than or equal to 0.05 and less than or equal to 0.08.
  2. 2. The piezoelectric material according to claim 1, wherein the chemical formula of the piezoelectric material includes ：x Pb(Mn 1/2 W 1/2 )O 3 -(1-x)[0.15Pb(Zn 1/3 Nb 2/3 )O 3 -0.85Pb(Zr 0.5 Ti 0.5 )O 3 ]+yQ, the oxide of at least one element of Yb and Eu, and the mass percentage of Q in x Pb(Mn 1/2 W 1/2 )O 3 -(1-x)[0.15Pb(Zn 1/3 Nb 2/3 )O 3 -0.85Pb(Zr 0.5 Ti 0.5 )O 3 ]+yQ is y wt%, and y is 0.2-0.6.
  3. 3. The piezoelectric material of claim 2, wherein Q is Yb 2 O 3 and Eu 2 O 3 ; The mass percentage of Yb 2 O 3 in x Pb(Mn 1/2 W 1/2 )O 3 -(1-x)[0.15Pb(Zn 1/3 Nb 2/3 )O 3 -0.85Pb(Zr 0.5 Ti 0.5 )O 3 ]+yQ is y1 wt%, and y1 is more than or equal to 0.1 and less than or equal to 0.3; The mass percentage of Eu 2 O 3 in x Pb(Mn 1/2 W 1/2 )O 3 -(1-x)[0.15Pb(Zn 1/3 Nb 2/3 )O 3 -0.85Pb(Zr 0.5 Ti 0.5 )O 3 ]+yQ is y2 wt%, and y2 is more than or equal to 0.1 and less than or equal to 0.3.
  4. 4. A piezoelectric material according to claim 2 or claim 3, wherein the chemical formula of the piezoelectric material comprises ：xPb(Mn 1/2 W 1/2 )O 3 -(1-x)[0.15Pb(Zn 1/3 Nb 2/3 )O 3 -0.85Pb(Zr 0.5 Ti 0.5 )O 3 ]+yQ+zEr 0.1 Bi 0.9 FeO 3 , the mass percentage of Er 0.1 Bi 0.9 FeO 3 in x Pb(Mn 1/2 W 1/2 )O 3 -(1-x)[0.15Pb(Zn 1/3 Nb 2/3 )O 3 -0.85Pb(Zr 0.5 Ti 0.5 )O 3 ]+yQ+zEr 0.1 Bi 0.9 FeO 3 is zwt%, z is less than or equal to 0.5.
  5. 5. The piezoelectric material of claim 1, wherein the chemical formula of the piezoelectric material comprises ：x Pb(Mn 1/2 W 1/2 )O 3 -(1-x)[0.15Pb(Zn 1/3 Nb 2/3 )O 3 -0.85Pb(Zr 0.5 Ti 0.5 )O 3 ]+zEr 0.1 Bi 0.9 FeO 3 , mass percent of Er 0.1 Bi 0.9 FeO 3 in xPb(Mn 1/2 W 1/2 )O 3 -(1-x)[0.15Pb(Zn 1/3 Nb 2/3 )O 3 -0.85Pb(Zr 0.5 Ti 0.5 )O 3 ]+zEr 0.1 Bi 0.9 FeO 3 is zwt%, and z is less than or equal to 0.5.
  6. 6. The piezoelectric material according to any one of claims 1 to 5, which satisfies at least one of the following characteristics: a) The density of the piezoelectric material is 7.53g/cm 3 ～7.70g/cm 3 ; b) The piezoelectric material has a piezoelectric strain constant D 33 to 400pC/N; c) The mechanical quality factor Q m of the piezoelectric material is 500-1500; d) The dielectric loss of the piezoelectric material at 20 KHz-20 MHz is 0.2% -0.6%.
  7. 7. A method of preparing a piezoelectric material, the method comprising the steps of: According to the chemical general formula of the piezoelectric material as claimed in any one of claims 1 to 5, weighing powder raw materials of ZnO, nb 2 O 5 、Pb 3 O 4 、ZrO 2 and TiO 2 , mixing with a first dispersing agent, performing ball milling once, drying a ball milling product once, and performing pre-sintering treatment once to obtain powder of 0.15Pb (Zn 1/3 Nb 2/3 )O 3 -0.85(Zr 0.5 Ti 0.5 )O 3 pre-sintered powder; According to the chemical general formula of the piezoelectric material as claimed in any one of claims 1 to 5, weighing powder raw materials of Pb 3 O 4 、WO 3 and MnCO 3 , mixing with a second dispersant, performing secondary ball milling, drying a secondary ball milling product, and performing secondary pre-sintering treatment to obtain Pb (Mn 1/2 W 1/2 )O 3 pre-sintered powder; Weighing 92-95 mol% of 0.15Pb (Zn 1/3 Nb 2/3 )O 3 -0.85(Zr 0.5 Ti 0.5 )O 3 presintered powder and 5-8 mol% of Pb (Mn 1/2 W 1/2 )O 3 presintered powder) according to the mol percentage, mixing, ball-milling the mixed product for three times, and drying and then presintered for three times; mixing the product of the three presintering treatments and an auxiliary agent, and then carrying out shaping treatment to obtain a piezoelectric material blank; Heating the piezoelectric material blank to 1150-1200 ℃ for sintering treatment, and cooling to obtain a piezoelectric material sheet; and forming a conductive layer on the surface of the piezoelectric material sheet, and carrying out polarization treatment to obtain the piezoelectric material.
  8. 8. The method of preparing a piezoelectric material according to claim 7, wherein the method satisfies at least one of the following characteristics: a) The first dispersant comprises at least one of water and ethanol; b) The rotating speed of the primary ball milling is 200 r/min-250 r/min, and the time of the primary ball milling is 1 h-5 h; c) The temperature of the primary presintering treatment is 800-900 ℃, and the time of the primary presintering treatment is 1-10 h; d) The second dispersant includes at least one of water and ethanol; e) The rotating speed of the secondary ball milling is 200 r/min-250 r/min, and the time of the secondary ball milling is 1 h-5 h; f) The temperature of the secondary presintering treatment is 750-850 ℃, and the time of the secondary presintering treatment is 1-5 h; g) The temperature of the three presintering treatments is 900-1000 ℃, and the time of the three presintering treatments is 2-10 hours; h) The median particle diameter of the three-time presintering treatment product is 0.2-0.4 mu m; i) The auxiliary agent comprises at least one of an adhesive, a dispersing agent, a solvent and a leveling agent; j) The dosage of the auxiliary agent is 14-18 wt% of the total weight of the three-time presintering treatment product; k) The temperature rising rate of the sintering treatment is 1-5 ℃ per minute, and the heat preservation time of the sintering treatment is 30-90 minutes.
  9. 9. The method of manufacturing a piezoelectric material according to claim 7, further comprising: providing a Q powder comprising an oxide of at least one element of Yb and Eu; And adding Q powder into the mixed product before the three ball milling steps, wherein the mass percentage of the Q powder in a new mixed product formed by the mixed product and the Q powder is 0.2-0.6 wt%.
  10. 10. The method of producing a piezoelectric material according to claim 7 or 9, characterized in that the method further comprises: According to the chemical general formula of the piezoelectric material as claimed in claim 4 or 5, weighing powder raw materials of Er 2 O 3 、Bi 2 O 3 and Fe 2 O 3 , mixing with a third dispersing agent, performing four ball milling, drying the four ball milling products, and performing four pre-sintering treatment to obtain Er 0.1 Bi 0.9 FeO 3 powder; And adding the Er 0.1 Bi 0.9 FeO 3 powder into the mixed product before the three ball milling, wherein the mass percentage of the Er 0.1 Bi 0.9 FeO 3 powder in a new mixed product formed by the mixed product and the Er 0.1 Bi 0.9 FeO 3 powder is less than or equal to 0.5wt%.
  11. 11. The method of preparing a piezoelectric material according to claim 10, wherein the method satisfies at least one of the following characteristics: a) The third dispersant comprises at least one of water and ethanol; b) The rotating speed of the four ball milling is 200 r/min-250 r/min, and the time of the four ball milling is 1 h-5 h; c) The temperature of the four-time presintering treatment is 800-900 ℃, and the time of the four-time presintering treatment is 1-5 h.
  12. 12. A piezoelectric device, characterized in that it comprises a piezoelectric material according to any one of claims 1 to 6 or a piezoelectric material prepared by a method according to any one of claims 7 to 11.
  13. 13. An electronic device, characterized in that, the electronic device comprising the piezoelectric device of claim 12.

Description

Piezoelectric material, preparation method thereof, piezoelectric device and electronic equipment Technical Field The application relates to the technical field of piezoelectric materials, in particular to a piezoelectric material, a preparation method thereof, a piezoelectric device and electronic equipment. Background Piezoelectric materials with high piezoelectric coefficient and high stability are widely applied to the fields of electronics, communication and the like, and the piezoelectric materials can realize the mutual conversion of electric energy and mechanical energy and are widely applied to various piezoelectric devices such as buzzers, sensors, high-frequency resonators, ultrasonic transducers, actuators, filters, surface acoustic wave devices, piezoelectric pumps and the like and corresponding terminal electronic equipment. Currently, piezoelectric materials have been widely used in high frequency applications (e.g., piezoelectric resonators, ultrasonic motors, piezoelectric air pumps, etc.), which have advantages of short response time, high conversion efficiency, etc. However, under the drive of an ultrasonic strong alternating current electric field, the piezoelectric material is easy to generate more heat, obvious temperature rise phenomenon occurs, a series of problems occur to the device, such as frequency drift, material cracking, electrode silver ion migration, service life reduction of the piezoelectric material in a wet air environment and the like, so that the wide application of the piezoelectric material is limited. Therefore, how to reduce self-heating of the piezoelectric material is very important for its use in power device high frequency applications. Disclosure of Invention In view of the above, embodiments of the present application provide a piezoelectric material, a method for manufacturing the piezoelectric material, a piezoelectric device, and an electronic apparatus, which can effectively reduce the loss of the piezoelectric material in high-frequency applications, improve the power conversion efficiency, realize wide bandwidth and high sensitivity, reduce the heat generation of the piezoelectric material, and improve the performance and stability of the piezoelectric material applied to the piezoelectric device and the electronic apparatus. In a first aspect, the application provides a piezoelectric material, wherein the chemical formula of the piezoelectric material comprises ：x Pb(Mn1/2W1/2)O3-(1-x)[0.15Pb(Zn1/3Nb2/3)O3-0.85Pb(Zr0.5Ti0.5)O3],, and x is more than or equal to 0.05 and less than or equal to 0.08. In some embodiments, the chemical formula of the piezoelectric material includes ：x Pb(Mn1/2W1/2)O3-(1-x)[0.15Pb(Zn1/3Nb2/3)O3-0.85Pb(Zr0.5Ti0.5)O3]+yQ, the oxide of at least one element of Yb and Eu, and the mass percentage of Q in x Pb(Mn1/2W1/2)O3-(1-x)[0.15Pb(Zn1/3Nb2/3)O3-0.85Pb(Zr0.5Ti0.5)O3]+yQ is y wt%, and y is 0.2-0.6. In some embodiments the Q is Yb 2O3 and Eu 2O3; The mass percentage of Yb 2O3 in x Pb(Mn1/2W1/2)O3-(1-x)[0.15Pb(Zn1/3Nb2/3)O3-0.85Pb(Zr0.5Ti0.5)O3]+yQ is y1 wt%, and y1 is more than or equal to 0.1 and less than or equal to 0.3; The mass percentage of Eu 2O3 in x Pb(Mn1/2W1/2)O3-(1-x)[0.15Pb(Zn1/3Nb2/3)O3-0.85Pb(Zr0.5Ti0.5)O3]+yQ is y2 wt%, and y2 is more than or equal to 0.1 and less than or equal to 0.3. In some embodiments, the chemical formula of the piezoelectric material includes ：x Pb(Mn1/2W1/2)O3-(1-x)[0.15Pb(Zn1/3Nb2/3)O3-0.85Pb(Zr0.5Ti0.5)O3]+yQ+zEr0.1Bi0.9FeO3, the mass percent of Er 0.1Bi0.9FeO3 in the x Pb(Mn1/2W1/2)O3-(1-x)[0.15Pb(Zn1/3Nb2/3)O3-0.85Pb(Zr0.5Ti0.5)O3]+yQ+zEr0.1Bi0.9FeO3 is z wt%, z is less than or equal to 0.5. In some embodiments, the chemical formula of the piezoelectric material includes ：x Pb(Mn1/2W1/2)O3-(1-x)[0.15Pb(Zn1/3Nb2/3)O3-0.85Pb(Zr0.5Ti0.5)O3]+zEr0.1Bi0.9FeO3, the mass percent of Er 0.1Bi0.9FeO3 in the x Pb(Mn1/2W1/2)O3-(1-x)[0.15Pb(Zn1/3Nb2/3)O3-0.85Pb(Zr0.5Ti0.5)O3]+zEr0.1Bi0.9FeO3 is z wt%, z is less than or equal to 0.5. In some embodiments, the piezoelectric material has a density of 7.53g/cm 3～7.70g/cm3. In some embodiments, the piezoelectric material has a piezoelectric strain constant D 33 of 365pC/N to 400pC/N. In some embodiments, the piezoelectric material has a mechanical quality factor Q m of 500-1500. In some embodiments, the dielectric loss of the piezoelectric material is 0.2% -0.6% at 20 KHz-20 MHz. In a second aspect, the present application provides a method for preparing a piezoelectric material, the method comprising the steps of: According to the chemical general formula of the piezoelectric material in the first aspect, powder raw materials of ZnO, nb 2O5、Pb3O4、ZrO2 and TiO 2 are weighed, mixed with a first dispersing agent, subjected to primary ball milling, and the primary ball milling product is dried and subjected to primary pre-sintering treatment to obtain 0.15Pb (Zn 1/3Nb2/3)O3-0.85(Zr0.5Ti0.5)O3 pre-sintered powder; According to the chemical general formula of t