CN-121991374-A - Near infrared photo-thermal semiconductor material and preparation method thereof

Abstract

The invention relates to the technical field of near infrared photothermal conversion materials, in particular to a near infrared photothermal semiconductor material and a preparation method thereof. The chemical formula of the near infrared photothermal semiconductor material is { [ BaCd (ONDI) 2 (H 2 O) 3 ]·H 2 O} n , the near infrared photothermal semiconductor material belongs to a triclinic system, and the space group is P-1. The ligand in the coordination polymer is tightly and bidirectionally arranged, so that the coordination polymer has a wide light absorption range from ultraviolet region to near infrared region, and shows excellent near infrared photo-thermal effect under 808 nm laser irradiation, and the efficiency is up to 45%. Coordination polymers provided herein exhibit semiconducting properties that facilitate charge transport in both directions, including skip and band charge transport.

Inventors

• YAN YONG
• ZHANG NINGNING

Assignees

• 聊城大学

Dates

Publication Date

20260508

Application Date

20260209

Claims (9)

1. 1. A near infrared photothermal semiconductor material is characterized in that the chemical formula is { [ BaCd (ONDI) 2 (H 2 O) 3 ]·H 2 O} n , The near infrared photo-thermal semiconductor material belongs to a triclinic system, the space group is P-1, and the unit cell parameter is ：a = 7.2041(7) Å, b = 8.8896(8) Å, c = 22.048(2) Å,α = 88.296(3)°,β = 89.149(3)°,γ = 71.730(2)°,V = 1340.2(2) Å 3 .
2. 2. A method of preparing the near infrared photothermal semiconductor material of claim 1, comprising the steps of: mixing barium salt, cadmium salt, water and 2, 7-dihydroxybenzo [ lmn ] [3,8] phenanthroline-1, 3,6,8 (2H, 7H) -tetraketone suspension, adding nitric acid solution, and reacting to obtain the near infrared thermal semiconductor material.
3. 3. The method of claim 2, wherein the barium salt comprises barium nitrate and the cadmium salt comprises cadmium chloride.
4. 4. The method according to claim 2, wherein the molar ratio of the barium salt to the cadmium salt is 1:1-1.25.
5. 5. The method of claim 2, wherein the barium salt and water are present in an amount of about 0.05 mmol to about 2 to about 3 mL.
6. 6. The preparation method according to claim 2, wherein the 2, 7-dihydroxybenzo [ lmn ] [3,8] phenanthroline-1, 3,6,8 (2H, 7H) -tetralone suspension is prepared by dispersing 2, 7-dihydroxybenzo [ lmn ] [3,8] phenanthroline-1, 3,6,8 (2H, 7H) -tetralone in N, N-dimethylformamide, and the dosage ratio of 2, 7-dihydroxybenzo [ lmn ] [3,8] phenanthroline-1, 3,6,8 (2H, 7H) -tetralone to N, N-dimethylformamide is 0.1 mmol:2-4 mL.
7. 7. The method according to claim 6, wherein the molar ratio of the barium salt to the 2, 7-dihydroxybenzo [ lmn ] [3,8] phenanthroline-1, 3,6,8 (2H, 7H) -tetraketone is 0.5:1 to 1.5.
8. 8. The method according to claim 2, wherein the concentration of the nitric acid solution is 0.5-2 mol/L, and the dosage ratio of the barium salt to the nitric acid solution is 0.05 mmol:0.1-0.3 mL.
9. 9. The method according to claim 2, wherein the reaction is carried out at a temperature of 110 to 130 ℃ for 48 to 96 hours.

Description

Near infrared photo-thermal semiconductor material and preparation method thereof Technical Field The invention relates to the technical field of near infrared photothermal conversion materials, in particular to a near infrared photothermal semiconductor material and a preparation method thereof. Background The near infrared photothermal semiconductor material is a semiconductor compound with obvious near infrared photothermal effect, has the core advantages of being capable of capturing near infrared light efficiently and converting the near infrared light into heat energy, has the electron transmission characteristic of the semiconductor material, and has important application value in the fields of solar-driven sea water desalination, photo-thermal catalysis, photoelectron detectors, biological photothermal treatment and the like. With the rapid development of the above fields, there is an increasing demand for the performance of near infrared photothermal semiconductor materials, wherein crystalline compounds having both excellent semiconductor performance and wide spectrum near infrared absorption capability are the core targets of current researches because of their ability to achieve efficient photothermal conversion and stable performance output. However, the design of synthesis of such compounds still faces significant challenges. On the one hand, the traditional near infrared photothermal material is difficult to combine the semiconductor property with the wide spectrum absorption property, namely, part of inorganic semiconductor materials have good semiconductor property, but the near infrared absorption spectrum range is narrower, the photothermal conversion efficiency is limited, and some organic photothermal materials can realize wide spectrum absorption through molecular design, but generally have the problems of weak semiconductor property and low electron transmission efficiency, and cannot meet the application scene of photoelectron detection and the like which have requirements on the electron transmission property. On the other hand, the construction of the crystalline structure further aggravates the design difficulty, and the ordered structure of the crystalline material is favorable for improving the performance stability, but in the crystal growth process, the molecular arrangement mode is often difficult to precisely regulate and control so as to simultaneously optimize the semiconductor performance and the spectrum absorption range, so that the existing crystalline near infrared thermal material generally has a short performance plate, and the actual application requirements cannot be fully met. In recent years, coordination polymers based on functional organic ligands have been very potential research directions due to their strong structural adjustability and excellent performance synergism. The coordination polymer forms an ordered crystalline structure through coordination of metal ions and organic ligands, and can realize accurate regulation and control on the electronic structure, optical performance and crystal structure of the material by selecting different metal centers and organic ligands. The naphthalimide derivative is taken as an electron-deficient organic compound with a large conjugate plane, has excellent chemical stability, redox activity and photophysical characteristics, and an anion free radical generated by single electron reduction can lead an absorption band to be obviously red-shifted to a near infrared region, so that the naphthalimide derivative is an ideal ligand selection for constructing a near infrared light response material. Although coordination polymers based on naphthalimide derivatives exhibit potential advantages in the near infrared light response field, there are fewer designs and optimizations for near infrared light thermal conversion performance and it is difficult to achieve simultaneous synergistic enhancement of semiconductor performance and broad spectrum near infrared absorption. Although some materials have a certain near infrared absorption capacity, the semiconductor performance is weak and the electron transmission efficiency is low due to unreasonable molecular arrangement and poor regulation and control of the interaction between the ligand and the metal center, and the near infrared absorption spectrum range of other materials is narrow, so that near infrared light resources cannot be fully utilized, and the improvement of the photo-thermal conversion efficiency is limited. Therefore, the development of the coordination polymer type near infrared photo-thermal material based on the naphthalimide derivative and having excellent semiconductor performance and wide-spectrum near infrared absorption capacity has great significance in breaking through the bottleneck of the prior art and promoting the technical progress of the related fields. Disclosure of Invention The invention aims to provide a near infrared photo-thermal semicondu