CN-121991518-A - Anti-cracking polysiloxane dielectric planarization compositions, methods, and films

Abstract

The present application relates to anti-cracking polysiloxane dielectric planarization compositions, methods, and films. The present disclosure relates to a composition for planarizing a surface of a semiconductor device, the composition comprising a catalyst, at least one solvent, and at least one polysiloxane resin, the at least one polysiloxane resin comprising polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane block includes at least one selected from the group consisting of aryl groups or alkyl groups having substituted or unsubstituted carbons.

Inventors

• Helen Xiao Xu
• HUANG HONGMIN

Assignees

• 霍尼韦尔国际公司

Dates

Publication Date

20260508

Application Date

20181218

Priority Date

20181205

Claims (10)

1. 1. A composition for planarizing a surface of a semiconductor device, the composition comprising: A catalyst; at least one solvent, and At least one silicone resin comprising polysilsesquioxane blocks and polydisiloxane blocks, said polydisiloxane blocks conforming to the general formula: , Wherein R 1 、R 2 is each independently selected from aryl groups or alkyl groups having a substituted or unsubstituted carbon.
2. 2. The composition of claim 1, wherein the polydisiloxane block comprises at least one of a poly (diphenylsiloxane) block, a poly (phenylmethylsiloxane) block, and a poly (dimethylsiloxane) block.
3. 3. The composition of claim 1, wherein the polysilsesquioxane block comprises at least one of a poly (methyl silsesquioxane) block and a poly (phenyl silsesquioxane) block.
4. 4. The composition of claim 1, wherein the concentration of the polydisiloxane blocks is from 0.1 mole% to 50 mole% of the polysiloxane resin.
5. 5. The composition of claim 1, wherein the weight average molecular weight of the polydisiloxane blocks in the composition is from 100Da to 5,000Da.
6. 6. The composition of claim 1, wherein the at least one silicone resin is a first silicone resin and further comprising a second silicone resin, the second silicone resin consisting of a poly (silsesquioxane) resin.
7. 7. A method for preparing a planarization composition, the method comprising: Dissolving at least one silicone resin in one or more solvents to form a resin solution, the at least one silicone resin comprising polysilsesquioxane blocks and polydisiloxane blocks, the polydisiloxane blocks conforming to the general formula: , wherein R 1 、R 2 is each independently selected from the group consisting of aryl groups or alkyl groups having a substituted or unsubstituted carbon, and A catalyst is added to the resin solution.
8. 8. The method of claim 7, wherein the polydisiloxane block comprises at least one of a poly (diphenylsiloxane) block, a poly (phenylmethylsiloxane) block, and a poly (dimethylsiloxane) block.
9. 9. A planarization film for a semiconductor device, the film comprising: Catalyst residue, and A cured polysiloxane comprising polysilsesquioxane blocks and polydisiloxane blocks, said polydisiloxane blocks conforming to the general formula: , Wherein R 1 、R 2 is each independently selected from aryl groups or alkyl groups having a substituted or unsubstituted carbon.
10. 10. The planarizing film of claim 9 wherein the polydisiloxane blocks comprise at least one of a poly (diphenylsiloxane) block, a poly (phenylmethylsiloxane) block, and a poly (dimethylsiloxane) block.

Description

Anti-cracking polysiloxane dielectric planarization compositions, methods, and films The present application is a divisional application of the inventive patent application with application number 201880087090.9, entitled "anti-cracking polysiloxane dielectric planarization composition, method, and film", having application number 2018, 12, 18. Technical Field The present invention relates to planarizing materials, and in particular, to planarizing dielectric materials for semiconductor and display fabrication. Background In advanced semiconductor fabrication, such as microprocessors, memory devices, and displays employing light emitting diodes, a dielectric material is required that can be spin-coated onto the surface of the device to fill the deep spaces or gaps between the device structures, providing a relatively flat surface suitable for subsequent device layer processing. Improvements in planarizing dielectric materials are needed to provide planarization for advanced semiconductor devices having trenches six microns deep or more. Advantageously, such dielectric materials are crack resistant at such thicknesses even when exposed to temperatures in excess of 400 ℃. For photovoltaic applications, it is also important that such dielectric materials have high light transmittance. The dielectric material should also be thermally stable when exposed to temperatures in excess of 400 ℃. Disclosure of Invention The present disclosure relates to a composition for planarizing a surface of a semiconductor device, the composition comprising a catalyst, at least one solvent, and at least one polysiloxane resin, the at least one polysiloxane resin comprising polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks conform to the general formula: , Wherein R 1、R2 is each independently selected from aryl groups or alkyl groups having a substituted or unsubstituted carbon. Various embodiments relate to compositions for planarizing semiconductor devices. The composition comprises a catalyst, at least one solvent, and at least one polysiloxane resin comprising polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks conform to the general formula: , Wherein R 1、R2 is each independently selected from aryl groups or alkyl groups having a substituted or unsubstituted carbon. In some embodiments, the polydisiloxane blocks include at least one of a poly (diphenylsiloxane) block, a poly (phenylmethylsiloxane) block, and a poly (dimethylsiloxane) block. In some embodiments, the polydisiloxane blocks are comprised of poly (diphenylsiloxane) blocks and poly (phenylmethylsiloxane) blocks. In some other embodiments, the polydisiloxane blocks consist of poly (dimethylsiloxane) blocks. In some embodiments, the polysilsesquioxane block comprises at least one of a poly (methyl silsesquioxane) block and a poly (phenyl silsesquioxane) block. In some embodiments, the concentration of the polydisiloxane blocks is from 0.1 mole% to 50 mole% of the polysiloxane resin. In some embodiments, the weight average molecular weight of the polydisiloxane blocks in the composition is from 100Da to 5,000Da. In some embodiments, the at least one solvent comprises at least one of ethyl lactate, propylene glycol propyl ether, propylene glycol monomethyl ether acetate, ethanol, isopropanol, and n-butyl acetate. In some embodiments, the catalyst comprises at least one of tetramethyl ammonium acetate, tetramethyl ammonium hydroxide, tetrabutyl ammonium acetate, cetyl trimethyl ammonium acetate, and tetramethyl ammonium nitrate. In some embodiments, the composition further comprises a surfactant. In some embodiments, the composition further comprises a cross-linking agent. In some embodiments, the at least one silicone resin comprises a first silicone resin and a second silicone resin. In some embodiments, the at least one silicone resin is a first silicone resin and further comprises a second silicone resin, the second silicone resin consisting of a poly (silsesquioxane) resin. Various embodiments relate to methods for preparing a planarization composition. The method includes dissolving at least one polysiloxane resin in one or more solvents to form a resin solution, and adding a catalyst to the resin solution. The at least one polysiloxane resin comprises polysilsesquioxane blocks and polydisiloxane blocks. The polydisiloxane blocks conform to the general formula: , Wherein R 1、R2 is each independently selected from aryl groups or alkyl groups having a substituted or unsubstituted carbon. In some embodiments, the polydisiloxane blocks include at least one of a poly (diphenylsiloxane) block, a poly (phenylmethylsiloxane) block, and a poly (dimethylsiloxane) block. In some embodiments, the concentration of the polydisiloxane blocks is from 0.1 mole% to 50 mole% of the polysiloxane resin. Various embodiments relate to planarizing films for semiconductor devices. The planarizing film comprises a catalyst residue and