CN-121991569-A - Coating based on nano material, preparation method thereof and semiconductor application

Abstract

The invention discloses a coating based on a nano material, a preparation method thereof and a semiconductor application, and relates to the technical field of coatings. The coating is prepared by taking aqueous epoxy resin-acrylic emulsion as a composite resin matrix, compounding quaternary synergistic filler consisting of nano SiC, nano carbon black, nano silicon nitride and nano calcium carbonate, and assisting with a composite modifying auxiliary agent through low-temperature dispersion, in-situ modification and mild curing processes. The composite material has the comprehensive properties of low dielectric loss, high temperature resistance, high adhesive force and ion migration resistance, and can be widely applied to the scenes of semiconductor chip packaging, device shell protection, substrate surface modification and the like. The invention solves the problems of single function and poor environmental adaptability of the traditional coating for semiconductors, and the preparation process is green and efficient, has strong practicability and has remarkable industrial application value.

Inventors

• FAN BAOLU
• LIU YANG
• FAN YUANYUAN
• Cao Zican
• JI YIJUN

Assignees

• 淮阴工学院

Dates

Publication Date

20260508

Application Date

20260309

Claims (10)

1. 1. The coating based on the nano material is characterized by comprising, by weight, 28-36 parts of a composite resin matrix, 20-31 parts of quaternary synergistic nano filler and 6-10 parts of a composite modification auxiliary agent, wherein the composite resin matrix is a water-based epoxy resin-acrylic emulsion compound system, the weight ratio of the two is 1.5-2.5:1, the quaternary synergistic nano filler comprises 5-8 parts of nano SiC, 2-4 parts of nano carbon black, 6-9 parts of nano silicon nitride and 7-10 parts of nano calcium carbonate, and the composite modification auxiliary agent comprises 3-5 parts of a silane coupling agent, 1-2 parts of triethanolamine, 1-2 parts of naphthoate and 1-1.5 parts of emulsified silicone oil.
2. 2. The nanomaterial-based paint of claim 1, wherein the particle size gradient of the quaternary synergistic nanofiller is 40-60nm of nano SiC, 15-30nm of nano carbon black, 25-45nm of nano silicon nitride, and 30-50nm of nano calcium carbonate.
3. 3. The nanomaterial-based paint of claim 1, wherein the silane coupling agent is one or both of a silane coupling agent KH550 and a silane coupling agent KH 560.
4. 4. The nanomaterial-based paint according to claim 1, characterized in that the paint has a dielectric constant of 3.5-5.0, a dielectric loss tangent of 0.02 or less and an insulating strength of 15kV/mm or more.
5. 5. A method of preparing a nanomaterial-based coating as claimed in any of claims 1 to 4, comprising the steps of: s1, weighing raw materials according to parts by weight, mixing aqueous epoxy resin and acrylic emulsion, adding triethanolamine and emulsified silicone oil, and stirring for 15-20min to obtain a composite resin matrix premix; S2, adding the quaternary synergistic nano filler into the composite resin matrix premix, and adopting an ultrasonic dispersion and mechanical stirring composite process to treat for 20-30min, wherein the ultrasonic power is 300-500W, and the stirring rotation speed is 800-1200r/min; S3, adding a silane coupling agent and naphthoate into the mixed system in the step S2, continuously stirring for 10-15min, and then standing for 5-8h at 20-30 ℃ to obtain the coating based on the nano material.
6. 6. The method according to claim 5, wherein the step S3 is followed by a mild curing step of pre-curing at room temperature for 12-24 hours and then post-curing at a medium temperature of 80-100 ℃ for 1-2 hours.
7. 7. A semiconductor application of the nanomaterial-based coating as claimed in any of claims 1 to 4, characterized in that the coating is applied in a thickness of 100 to 200 μm for semiconductor chip packaging protection.
8. 8. The use according to claim 7, wherein the coating is used for the protection of semiconductor device housings, applied by spray coating or dip coating, the resulting coating having a temperature resistance in the range of-50 ℃ to 200 ℃.
9. 9. The use according to claim 7, wherein the coating is used for the surface modification of semiconductor substrates, the contact angle of the substrate surface after coating being not less than 110 °.
10. 10. A semiconductor device, characterized in that a chip pin, a case or a substrate surface of the semiconductor device is provided with an insulating coating formed of the nanomaterial-based paint of any one of claims 1 to 4.

Description

Coating based on nano material, preparation method thereof and semiconductor application Technical Field The invention relates to the technical field of crossing of high polymer coating and nano composite material, in particular to a high thermal conductivity casting coating based on nano material, a preparation method and semiconductor application thereof, belonging to the technical direction of preparation and application of non-stick coating. Background The rapid development of semiconductor technology promotes the evolution of products such as chips, power devices and the like to the directions of high integration level and high power density, and the problems of insulation protection, thermal stability, signal transmission loss and the like in the working process of the products become key factors for restricting the improvement of the performance of the products. The core parts such as semiconductor chip packaging, device housing and the like have strict requirements on the performance of protective coating, so that not only is excellent insulating performance required to avoid short circuit risks, but also the characteristics of low dielectric loss, high temperature resistance, high adhesive force, environmental corrosion resistance and the like are considered, and long-term stable operation of the device under complex working conditions is ensured. The traditional coating for the semiconductor has the defects that the cooperative optimization of the performances such as insulation, low dielectric property, high temperature resistance and the like is difficult to realize due to the adoption of a single resin matrix or functional filler, for example, the traditional epoxy resin coating has good insulativity, but has high dielectric loss and is easy to crack at high temperature, the partial coating has the defect of single function, can only meet the basic insulation requirement, lacks the key performances such as ion migration resistance, wet heat aging resistance and the like, easily has the problems of coating falling, performance attenuation and the like in the long-term operation process of the semiconductor device, and influences the reliability of the device, and in addition, the preparation process of the partial coating is complex, high-temperature curing or special equipment is needed, so that the production cost is increased, the semiconductor substrate is possibly damaged due to the high-temperature process, and the use of the solvent type coating is not in line with the current green and environment-friendly industry development trend. Although the development of a coating for a semiconductor related scene has occurred in the prior art, for example, part of the coating improves the insulation performance through a composite filler or adopts an aqueous system to reduce the environmental impact, a comprehensive solution with low dielectric loss, high temperature resistance, high adhesive force and green environment protection characteristics is not formed, and the precise requirements of the scenes such as semiconductor chip packaging protection, device shell protection and the like cannot be fully adapted. Therefore, developing a nanomaterial-based coating which is optimized in performance cooperation, simple in preparation process, environment-friendly and suitable for the application scene of a semiconductor core becomes a technical problem to be solved in the field of the current semiconductor protective materials. Disclosure of Invention The primary aim of the invention is to provide the coating based on the nano material, which can be accurately matched with the core requirements of semiconductor chip packaging protection and semiconductor device shell protection, has the comprehensive properties of low dielectric loss, high temperature resistance, high adhesive force and ion migration resistance, and solves the technical defects that the existing coating for the semiconductor has single function, poor environmental adaptability and difficulty in meeting the multi-dimensional performance requirements. The coating based on the nano material comprises, by weight, 28-36 parts of a composite resin matrix, 20-31 parts of quaternary synergistic nano filler and 6-10 parts of a composite modification auxiliary agent, wherein the composite resin matrix is a water-based epoxy resin-acrylic emulsion compound system, the weight ratio of the two is 1.5-2.5:1, the quaternary synergistic nano filler comprises 5-8 parts of nano SiC, 2-4 parts of nano carbon black, 6-9 parts of nano silicon nitride and 7-10 parts of nano calcium carbonate, and the composite modification auxiliary agent comprises 3-5 parts of a silane coupling agent, 1-2 parts of triethanolamine, 1-2 parts of naphthoate and 1-1.5 parts of emulsified silicone oil. Preferably, the particle size gradient of the quaternary synergistic nano-filler is 40-60nm of nano SiC, 15-30nm of nano carbon black, 25-45nm of nano silicon nitride and 30-50