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CN-121991596-A - Be used for CsPbBr3Chemical mechanical polishing solution for crystal polishing and application thereof

CN121991596ACN 121991596 ACN121991596 ACN 121991596ACN-121991596-A

Abstract

The invention discloses a chemical mechanical polishing solution for CsPbBr 3 crystal polishing and application thereof, belonging to the technical field of crystal chemical mechanical polishing. The polishing solution comprises absolute ethyl alcohol, silicone oil, deionized water, a dispersing agent, hydrogen bromide and aluminum oxide, wherein the absolute ethyl alcohol, the silicone oil, the deionized water, the dispersing agent and the hydrogen bromide are mixed into a solution I according to the volume ratio of 33:59.2:7:0.6:0.2, and the mass ratio of the solution I to the aluminum oxide is 10:1. The polishing solution can effectively balance the mechanical action and chemical corrosion rate of CsPbBr 3 crystals in the chemical mechanical polishing process, reduce the damage to the crystals in the chemical mechanical polishing process, greatly reduce the surface roughness, scratch density and depth generated in the CsPbBr 3 crystals in the chemical mechanical polishing process, ensure that the CsPbBr 3 crystals are efficient and stable in the chemical mechanical polishing treatment process, greatly improve the chemical mechanical polishing quality of the CsPbBr 3 crystals, obtain high-quality polished surfaces, and remarkably improve the physical and electrical properties of the crystals, and has good practicability.

Inventors

  • ZHONG CHENGQIAN
  • XU RUN
  • LUO YIKE
  • ZHANG YUZHE
  • LAI JIANMING

Assignees

  • 上海大学

Dates

Publication Date
20260508
Application Date
20260119

Claims (8)

  1. 1. The chemical mechanical polishing solution for CsPbBr 3 crystal polishing is characterized by comprising the following components of absolute ethyl alcohol, silicone oil, deionized water, a dispersing agent, hydrogen bromide and aluminum oxide, wherein the absolute ethyl alcohol, the silicone oil, the deionized water, the dispersing agent and the hydrogen bromide are mixed into a solution I according to the volume ratio of 33:59.2:7:0.6:0.2, and the mass ratio of the solution I to the aluminum oxide is 10:1.
  2. 2. The method for preparing the chemical mechanical polishing solution for CsPbBr 3 crystal polishing as claimed in claim 1, which is characterized by comprising the following steps: (1) Mixing absolute ethyl alcohol, silicone oil, deionized water, a dispersing agent and hydrogen bromide to prepare a solution I; (2) The solution I and alumina are mixed to prepare the chemical mechanical polishing solution for CsPbBr 3 crystal polishing.
  3. 3. The process according to claim 2, wherein the alumina in the step (2) has a particle size of 1.5. Mu.m.
  4. 4. Use of the chemical mechanical polishing solution for CsPbBr 3 crystal polishing according to claim 1.
  5. 5. The use according to claim 4, characterized in that it comprises the following steps: (1) Setting pressure, rotating speed of the upper disc and the lower disc and time, and polishing CsPbBr 3 crystals by using chemical mechanical polishing liquid; (2) Cleaning the polished CsPbBr 3 crystal surface by using a cleaning agent; (3) Residual cleaning agent on the surface of CsPbBr 3 crystal is blown out by nitrogen.
  6. 6. The method according to any one of claims 4 to 5, wherein the chemical mechanical polishing liquid in the step (1) is used in an amount of 4mL/min to 18mL/min, and the set pressure is 0.5N to 2.5N.
  7. 7. The use according to any one of claims 4 to 5, wherein the cleaning agent in step (2) is a solvent which does not react with the crystal surface of CsPbBr 3 and which is capable of removing the chemical mechanical polishing liquid.
  8. 8. The use according to any one of claims 4 to 5, wherein in step (2) the nitrogen pressure is 0.1 to 0.5Mpa and the flow is 10 to 30L/min.

Description

Chemical mechanical polishing solution for CsPbBr 3 crystal polishing and application Technical Field The invention relates to the technical field of crystal chemical mechanical polishing, in particular to a chemical mechanical polishing solution for CsPbBr 3 crystal polishing and application thereof. Background The all-inorganic halide perovskite CsPbBr 3 is an advanced material with excellent photoelectric performance, has the characteristics of large atomic number, low defect density, long carrier migration life, close electron hole mobility life product, capability of working at room temperature and the like of ternary compounds, and has been widely applied to the fields of nuclear radiation detectors, photoelectric detectors, solar cells and the like and has excellent performance due to the recent related research progress. However, csPbBr 3 crystals face a key technical bottleneck in actual device fabrication and application, namely, the surface quality directly influences the performance and consistency of the device. Theoretical calculation and experimental research show that the surface state is one of key factors restricting effective collection and transmission of carriers, leading to increase of dark current of the device, decrease of signal to noise ratio and deterioration of stability. At present, the application of the precise surface processing of the crystal, especially the chemical mechanical polishing technology, faces the obstruction caused by the inherent physical and chemical characteristics of the CsPbBr 3 crystal, is low in hardness, easy to absorb moisture and easy to react with an organic solvent, so that the chemical mechanical polishing solution aiming at the CsPbBr 3 crystal characteristics is developed by improving the polishing solution component, so that the nondestructive, efficient and atomic-level flattening processing of the surface of the CsPbBr 3 crystal is realized, and the chemical mechanical polishing solution has great theoretical significance for improving the performance, the reliability and the yield of a photoelectric device based on CsPbBr 3. Disclosure of Invention In order to solve or partially solve the problems in the related art, the invention provides the chemical mechanical polishing solution for CsPbBr 3 crystal polishing, and the mechanical cutting effect and the chemical corrosion effect in the CsPbBr 3 crystal chemical mechanical polishing process can be effectively balanced by using the polishing solution, so that the CsPbBr 3 crystal chemical mechanical polishing treatment process is efficient and stable, the quality of CsPbBr 3 crystal chemical mechanical polishing is greatly improved, an atomically flat surface is obtained, the physical and electrical properties of the crystal are improved, the bottleneck faced by the traditional CsPbBr 3 crystal polishing is effectively overcome, a feasible solution with excellent effect is provided for obtaining the high-quality CsPbBr 3 crystal surface, and the invention has good industrial practicability and popularization value. The invention aims to provide a chemical mechanical polishing solution for CsPbBr 3 crystal polishing, which comprises the following components of absolute ethyl alcohol, silicone oil, deionized water, a dispersing agent, hydrogen bromide and aluminum oxide, wherein the absolute ethyl alcohol, the silicone oil, the deionized water, the dispersing agent and the hydrogen bromide are mixed into a solution I according to the volume ratio of 33:59.2:7:0.6:0.2, and the mass ratio of the solution I to the aluminum oxide is 10:1. The second purpose of the invention is to provide a preparation method of the chemical mechanical polishing solution, which specifically comprises the following steps: (1) Absolute ethyl alcohol, silicone oil, deionized water, a dispersing agent and hydrogen bromide are mixed according to the volume ratio of 33:59.2:7:0.6:0.2, and a magnetic stirrer is used for uniformly mixing to prepare a solution I. (2) Mixing the solution I and alumina according to the mass ratio of 10:1, and uniformly mixing by using a magnetic stirrer to prepare the chemical mechanical polishing solution for CsPbBr 3 crystal polishing. Preferably, in the step (1) of the invention, the rotation speed of the magnetic stirrer is 200rpm, the temperature is 26 ℃, and the stirring time is 5min. Preferably, the alumina according to the present invention is alumina particle powder having a particle size of 1.5. Mu.m. Preferably, in the step (2) of the invention, the rotation speed of the magnetic stirrer is 100-300rpm, the temperature is 15-26 ℃, and the stirring time is 3-10min. The invention also provides application of the chemical mechanical polishing solution, which comprises the following specific steps: (1) And setting pressure, upper disc rotating speed, lower disc rotating speed and polishing time, and polishing the CsPbBr3 crystal by using chemical mechanical polishing liquid. (2) And cleani