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CN-121991684-A - Method for preparing nano array by plasma etching

CN121991684ACN 121991684 ACN121991684 ACN 121991684ACN-121991684-A

Abstract

The invention aims to provide a method for preparing a nano array by adopting plasma etching. Specifically, a micro-nano processing technology of a red light nanocrystalline material is provided, and the diameter of polystyrene microspheres wrapped with nanocrystalline is precisely controlled through a plasma etching process, so that a nano array structure with a certain gap is constructed. The invention overcomes the defects of the prior art, simplifies the preparation process and reduces the production cost.

Inventors

  • XIAO YIN
  • TAO MIN

Assignees

  • 天津大学

Dates

Publication Date
20260508
Application Date
20241106

Claims (10)

  1. 1. A method for preparing a nano array by adopting plasma etching is characterized in that, Using a gas-liquid interface self-assembly method to arrange polystyrene microsphere materials wrapped with nano crystals into a polystyrene microsphere array which is arranged in a single layer in a tight manner; and carrying out plasma etching treatment on the array to reduce the diameter of the polystyrene microspheres in the array to obtain an etched polystyrene microsphere nano array, wherein the etched polystyrene microspheres in the nano array are regularly arranged and have a certain gap.
  2. 2. The method for preparing a nano array by plasma etching according to claim 1, wherein the nanocrystalline material wrapped in the polystyrene microsphere is quantum dots, metal nanoparticles or oxide nanocrystals.
  3. 3. The method for preparing the nano-array by plasma etching according to claim 1, wherein the diameter of the polystyrene microsphere wrapped with the nano-crystal is 100-500 nm.
  4. 4. The method for preparing the nano-array by plasma etching according to claim 1, wherein the diameter of the etched polystyrene microsphere is 50-450 nm, and the gap between adjacent etched polystyrene microspheres is 10-500 nm.
  5. 5. The method for preparing the nano-array by plasma etching according to claim 1, wherein the etching power of the plasma etching is 50-200W and the etching time is 1-10 min.
  6. 6. The method for preparing a nano-array by plasma etching according to claim 1, wherein the gas component of the plasma etching is oxygen or argon.
  7. 7. The method for preparing the nano-array by plasma etching according to claim 1, wherein in the plasma etching process, the working temperature is 30-60 ℃.
  8. 8. The method for preparing a nano-array by plasma etching according to claim 1, wherein the specific steps of the gas-liquid interface self-assembly method are as follows: step 1, dispersing a polystyrene material wrapped with nano crystals in a solvent to form a stable and uniform suspension; step 2, slowly dripping the suspension in the step 1 on a substrate subjected to hydrophilic treatment, immersing the substrate with the suspension dripped into deionized water, and obtaining an ordered single-layer self-assembled film on the water surface; and 3, fishing out the monolayer self-assembled film obtained in the step 2 by using a substrate subjected to hydrophilic treatment, and drying to obtain the monolayer closely arranged polystyrene microsphere array.
  9. 9. The method for preparing a nano array by plasma etching according to claim 8, wherein the solvent used in the step 1 is ethanol, or water, or a mixed solvent obtained by mixing water and ethanol in an arbitrary ratio.
  10. 10. The method of claim 8, wherein the substrate is one of ITO, glass, quartz, and silicon wafer, the surfactant used to treat the substrate comprises at least one of sodium dodecyl sulfate, dodecylbenzenesulfonic acid, or cetyltrimethylammonium bromide, and the method of treating the substrate comprises at least one of plasma treatment or soaking in a piranha solution.

Description

Method for preparing nano array by plasma etching Technical Field The invention relates to a preparation method of a polystyrene-coated nanocrystalline composite luminescent material array, and belongs to the technical field of micro-nano processing. Background In the rapid development of modern technology, micro-nano processing technology of semiconductor materials has become a bridge connecting basic scientific research and high-end industrial application. In particular to a composite luminescent material, which is a multifunctional material fused with advanced optical, electrical and material science principles, and has remarkable application potential in the fields of display, solid-state lighting, sensing detection, biological imaging and the like in recent years. Among them, a polystyrene-coated nanocrystalline composite luminescent material has been one of the materials of interest in this field by virtue of its excellent spectral characteristics, stable luminous efficiency and tunable color expression. Although the performance of polystyrene-coated nanocrystals has been quite excellent, in many practical applications, a large number of polystyrene-coated nanocrystals need to be arranged in a periodic array in order to achieve better luminous efficiency, color purity, and spatial resolution. The array structure not only can ensure the overall luminous efficiency of the material, but also can realize the optimal regulation and control of the luminous mode by controlling the interaction among nanocrystals, and a series of forward edge technologies based on photonic crystals and plane light sources are started. Therefore, developing a reliable, economical and mass-producible array technology is critical to the practical application of the advanced composite luminescent materials. Disclosure of Invention The invention aims to provide a plasma etching method for realizing the array of a styrene-coated nanocrystalline composite luminescent material. Optionally, firstly, arranging polystyrene microspheres wrapped with nanocrystals into a polystyrene microsphere array in a single-layer compact arrangement through a gas-liquid interface self-assembly method, then carrying out plasma etching treatment on the array to reduce the diameter of the polystyrene microspheres in the array, thus obtaining the etched polystyrene microsphere nano array, wherein the etched polystyrene microspheres in the nano array are regularly arranged with a certain gap. The preparation method is simple and convenient to operate, fills the blank of the prior art, and leads the field of luminescent materials to be a new technical height. Further, the diameter of the polystyrene microsphere wrapped with the nanocrystalline is 100-500 nm. Further, the diameter of the etched polystyrene microsphere is 50-450 nm, and the gap between adjacent etched polystyrene microspheres is 10-600 nm. In practical applications, the scale of the microsphere diameter is reduced by about 10% -45% by etching. Further, the etching power of the plasma etching is 50-200W, and the etching time is 1-10 min. Further, in the plasma etching process, the working temperature is 30-60 ℃. Further, the gas component of the plasma etching is oxygen or argon. Further, the nanocrystalline materials wrapped in the polystyrene microsphere are quantum dots, metal nanoparticles, oxide nanocrystals and the like. The gas-liquid interface self-assembly method comprises the following steps: Step 1, dispersing a polystyrene material wrapped with nano-crystals in a solvent to form a stable and uniform suspension, wherein for example, an ethanol solvent can be adopted, and the polystyrene material wrapped with nano-crystals and the ethanol solvent are fully mixed according to a ratio of 1:1-5; Step 2, slowly dripping the mixed solution in the step 1 on a substrate (for example, a silicon wafer) subjected to hydrophilic treatment, immersing the substrate (for example, the silicon wafer) with the suspension dripped into deionized water, and obtaining an ordered single-layer self-assembled film on the water surface; and 3, fishing out the monolayer self-assembled film obtained in the step 2 by using the substrate subjected to hydrophilic treatment, and drying to obtain the monolayer closely arranged polystyrene microsphere array. Further, in step 1 of the gas-liquid interface self-assembly method of the present invention, the solvent is ethanol, or water, or a mixed solvent obtained by mixing water and ethanol in any ratio. Further, in the gas-liquid interface self-assembly method of the present invention, the substrate material is one of ITO, glass, quartz and silicon wafer. Further, in the gas-liquid interface self-assembly method of the present invention, the surfactant used in the hydrophilic treatment of the substrate includes at least one of sodium dodecyl sulfate and active cetyl trimethyl ammonium bromide of dodecylbenzenesulfonic acid. Further, in the gas-liquid interface self-as