CN-121991693-A - Indium phosphide surface etching and passivating dual-function etching solution

CN121991693ACN 121991693 ACN121991693 ACN 121991693ACN-121991693-A

Abstract

The invention belongs to the field of semiconductor manufacturing, and provides an InP surface etching and passivating dual-function etching solution, which utilizes the synergistic effect of benzenesulfonic acid or derivatives thereof, an oxidant and an organic solvent to realize high-precision and high-quality etching and surface self-passivation of InP surface residues and oxide layers, wherein the benzenesulfonic acid or derivatives thereof can effectively etch the InP surface residues and the oxide layers, simultaneously, the benzenesulfonic acid or derivatives thereof can improve the surface flatness by complexing dissolved metal ions and can be complexed on the InP surface to form an organic-inorganic composite passivation layer, the ionization degree of the benzenesulfonic acid or derivatives thereof can be regulated by complexing the organic solvent, the etching rate can be regulated, the etching precision can be improved, the addition of the oxidant can inhibit PH 3 from generating, and the etching process safety and the environmental protection can be improved. The etching solution has the characteristics of low damage, high stability, high precision and environmental protection, and provides a new technological thought and solution for the surface etching and passivation treatment of the InP semiconductor.

Inventors

JIANG HAOTIAN
WANG OU
LU YANLING
TIAN HONGJUN
LEI YU
ZHOU DIANLI
WANG YAO
YOU YIMIN
Ke zungui
WANG GUOSHENG

Assignees

西南技术物理研究所

Dates

Publication Date: 20260508
Application Date: 20251224

Claims (10)

1. The InP surface etching and passivating dual-function etching solution is characterized by being prepared from benzenesulfonic acid or derivatives thereof, an oxidant and a solvent.
2. The InP surface etching, passivating dual function etchant of claim 1, wherein said benzenesulfonic acid or derivative thereof has the general structural formula: Wherein, the R 1 、R 2 、R 4 、R 5 groups are respectively and independently selected from hydrogen and fluorine atoms, and the R 3 groups are selected from one of H atoms, F atoms, C 1 ~ C 12 linear alkyl groups or C 1 ~ C 12 linear perfluoroalkyl groups.
3. The InP surface etching, passivating dual function etchant of claim 2, wherein said oxidizing agent is hydrogen peroxide.
4. The InP surface etching and passivating dual-function etching solution according to claim 3, wherein said solvent is one or more of ethanol, isopropanol, acetone, tetrahydrofuran or acetonitrile.
5. The InP surface etching/passivating dual-functional etching solution according to claim 4, wherein the configuration ratio of benzenesulfonic acid or its derivative, oxidant and solvent is that the oxidant and solvent form a solution a with a volume ratio of 1:2-10, the benzenesulfonic acid or its derivative and solvent form a solution B with a concentration of 1-6 mol/L, and the solution a and the solution B are mixed with each other with a volume ratio of 1:1.
6. A method for preparing an InP-based surface etching, passivation dual-function etching solution according to claim 5, comprising the steps of: Firstly, mixing a set amount of solvent and a set amount of oxidant to obtain a solution A, wherein the volume ratio of the oxidant to the solvent in the solution A is 1:2-10; Step two, mixing and dissolving a set amount of solvent and a set amount of benzenesulfonic acid or derivatives thereof to obtain a solution B, wherein the concentration of benzenesulfonic acid or derivatives thereof in the solution B is 1-6 mol/L; and thirdly, mixing the solution A and the solution B according to the volume ratio of 1:1 to obtain the InP surface etching and passivating dual-function etching solution.
7. The method for preparing an InP surface etching and passivating dual-functional etching solution according to claim 6, wherein in step one, a predetermined amount of solvent is taken in a brown reagent bottle, and then a predetermined amount of oxidant is slowly added into the brown reagent bottle, and the solution a is obtained by stirring the solution at room temperature for 60 minutes in a dark place.
8. The method for preparing an InP surface etching and passivating dual-functional etchant according to claim 7, wherein in step two, a predetermined amount of said solvent is taken in a reagent bottle, and a predetermined amount of benzenesulfonic acid or its derivative is slowly added in the reagent bottle, and stirred at room temperature for 60 minutes until said benzenesulfonic acid or its derivative is completely dissolved, thereby obtaining solution B.
9. The method for preparing the InP surface etching/passivating dual-function etching solution according to claim 8, wherein in the third step, the solution a and the solution B are mixed according to a volume ratio of 1:1, and are stirred at room temperature for 30 minutes in a dark place, so as to obtain the InP surface etching/passivating dual-function etching solution.
10. The method for preparing the InP surface etching and passivating dual-function etching solution according to claim 9, wherein 50mL of ethanol is taken in a brown reagent bottle, 10mL of H 2 O 2 is taken and slowly added into the brown reagent bottle, and is stirred at room temperature for 60 minutes in a dark place to obtain an H 2 O 2 ethanol solution, 50mL of ethanol is taken in the reagent bottle, 23.7g of benzenesulfonic acid is weighed and slowly added into ethanol, and is stirred at room temperature for 60 minutes until benzenesulfonic acid is completely dissolved to obtain an ethanol solution of benzenesulfonic acid, and the ethanol solution of benzenesulfonic acid is slowly added into the brown reagent bottle containing the ethanol solution of H 2 O 2 , and is stirred at room temperature for 30 minutes in a dark place to uniformly mix, thereby obtaining the etching and passivating dual-function etching solution.

Description

Indium phosphide surface etching and passivating dual-function etching solution Technical Field The invention belongs to the technical field of semiconductor manufacturing, and relates to an indium phosphide surface etching and passivating dual-function etching solution which is used for improving the electrical property and reliability of an InP device. Background Solid state source diffusion is an essential process in InP device fabrication that utilizes solid state compounds (e.g., zn 3P2) as dopant sources to decompose and release dopant atoms at high temperatures to diffuse into the InP lattice to form doped regions. However, solid state source diffusion can result in residual dopant compounds on the InP surface, resulting in rough surfaces or leakage channels. In addition, inP tends to form unstable oxide layers (e.g., inO x、InPOx, etc.) when exposed to air, increasing interface state density. Therefore, the etching process of the InP surface residues and the InP surface passivation process have important significance for improving the performance and reliability of the InP device. In conventional InP etching and passivation processes, conventional etching solutions (hydrochloric acid (HCl), sulfuric acid (H 2SO4), liquid bromine (Br 2), etc.) are generally used to etch InP surface residues and oxide layers, and then to passivate the exposed InP surface. The etching and passivating process has the following technical problems that ① conventional etching liquid has poor etching selectivity on InP and residues or oxide layers on the surface of the InP, excessive etching is easy to cause on the InP, pits appear on the surface, the surface is rough after ② conventional etching liquid is corroded, the InP surface is not passivated after ③ conventional etching liquid is treated, and the exposed InP surface is easy to undergo secondary oxidation. These problems can cause InP surface degradation, leading to increased scattering loss and reduced electrical performance of the device. Therefore, development of a novel etching solution capable of achieving the combination of InP surface residue removal efficiency, surface quality and surface passivation capability is desired. Disclosure of Invention Object of the invention The invention aims to provide the InP surface etching and passivating dual-function etching solution, which solves the problems of InP surface residues and secondary oxidation by optimizing the formula of the etching solution and improves the reliability of a device. (II) technical scheme In order to solve the technical problems, the invention provides an InP surface etching and passivating dual-function etching solution which is prepared from benzenesulfonic acid or derivatives thereof, an oxidant and a solvent. Further, the structural general formula of the benzenesulfonic acid or the derivative thereof is as follows: Wherein, the R 1、R2、R4、R5 groups are respectively and independently selected from hydrogen and fluorine atoms, and the R 3 groups are selected from one of H atoms, F atoms, C 1~ C12 linear alkyl groups or C 1~ C12 linear perfluoroalkyl groups. Further, the oxidizing agent is hydrogen peroxide. Further, the solvent is one or more of ethanol, isopropanol, acetone, tetrahydrofuran or acetonitrile. Further, the configuration proportion among the benzenesulfonic acid or the derivative thereof, the oxidant and the solvent is that the oxidant and the solvent form a solution A with the volume ratio of 1:2-10, the benzenesulfonic acid or the derivative thereof and the solvent form a solution B with the concentration of 1-6 mol/L, and the solution A and the solution B are mixed according to the volume ratio of 1:1 The invention also provides a configuration method of the InP surface etching and passivation dual-function etching liquid, which comprises the following steps: Firstly, mixing a set amount of solvent and a set amount of oxidant to obtain a solution A, wherein the volume ratio of the oxidant to the solvent in the solution A is 1:2-10; Step two, mixing and dissolving a set amount of solvent and a set amount of benzenesulfonic acid or derivatives thereof to obtain a solution B, wherein the concentration of benzenesulfonic acid or derivatives thereof in the solution B is 1-6 mol/L; and thirdly, mixing the solution A and the solution B according to the volume ratio of 1:1 to obtain the InP surface etching and passivating dual-function etching solution. In the first step, a set amount of solvent is taken in a brown reagent bottle, and then the set amount of oxidant is slowly added into the brown reagent bottle, and the mixture is stirred for 60 minutes at room temperature in a dark place, so that a solution A is obtained. In the second step, a set amount of the solvent is taken in a reagent bottle, and then the set amount of benzenesulfonic acid or the derivative thereof is slowly added into the reagent bottle, and stirred at room temperature for 60 minutes until the benzenesulfonic