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CN-121991768-A - Environment-friendly low-alkalinity circuit-level silicon wafer cleaning agent for grinding and polishing

CN121991768ACN 121991768 ACN121991768 ACN 121991768ACN-121991768-A

Abstract

The invention provides an environment-friendly low-alkalinity cleaning agent for a circuit-level silicon wafer after grinding and polishing, and belongs to the technical field of manufacturing of circuit-level semiconductor materials. The cleaning agent comprises, by weight, 5-15% of an emulsifier, 0.5-5% of a wetting agent, 5-25% of a zwitterionic surfactant, 1-10% of an alkyl glycoside, 0.5-5% of dodecylbenzenesulfonic acid, 1-10% of a chelating agent, 1-10% of an alcohol ether solvent, 1-5% of an organic base auxiliary agent, 0.5-2% of potassium hydroxide, and the balance deionized water. The cleaning agent of the invention has low alkalinity, does not contain harmful substances such as phosphorus, nonylphenol and the like, has strong detergency, does not corrode silicon wafers, is easy to rinse, can be biodegraded, and is easy to treat waste water.

Inventors

  • HUANG WENFEI
  • LIU YUANTAO
  • CHEN WEIQUN
  • SHAO QI
  • GUO SUOZHU

Assignees

  • 三达奥克化学股份有限公司

Dates

Publication Date
20260508
Application Date
20260408

Claims (8)

  1. 1. The environment-friendly low-alkalinity circuit-level silicon wafer cleaning agent for grinding and polishing is characterized by comprising, by weight, 5-15% of an emulsifier, 0.5-5% of a wetting agent, 5-25% of a zwitterionic surfactant, 1-10% of alkyl glycoside, 0.5-5% of dodecylbenzene sulfonic acid, 1-10% of a chelating agent, 1-10% of an alcohol ether solvent, 1-5% of an organic base auxiliary agent, 0.5-2% of potassium hydroxide and the balance deionized water.
  2. 2. The cleaning agent for the ground and polished environment-friendly low-alkalinity circuit-grade silicon wafer according to claim 1, wherein the emulsifier is 2, 5, 9-trimethyldecanol polyoxyethylene ether with 5 EO numbers and 2, 5, 9-trimethyldecanol polyoxyethylene ether with 8 EO numbers, and the ratio of the two is 3:1.
  3. 3. The cleaning agent for the ground and polished environment-friendly low-alkalinity circuit-grade silicon wafer according to claim 1, wherein the wetting agent is 3-propyl heptanol polyoxyethylene ether with 7 EO numbers.
  4. 4. The cleaning agent for the ground and polished low-alkalinity circuit grade silicon wafer according to claim 1, wherein the zwitterionic surfactant is an alkylamide betaine selected from one or a mixture of lauramidopropyl betaine and cocoamidopropyl betaine.
  5. 5. The cleaning agent for the ground and polished environment-friendly low-alkalinity circuit-grade silicon wafer according to claim 1, wherein the alkyl glycoside is a mixture of C6 alkyl glycoside and C8-14 alkyl glycoside, and the ratio of the alkyl glycoside to the C8-14 alkyl glycoside is 1:2-4.
  6. 6. The cleaning agent for the ground and polished low-alkalinity circuit grade silicon wafer according to claim 1, wherein the chelating agent is one or more of nitrilotriacetic acid, gluconic acid and citric acid.
  7. 7. The cleaning agent for the ground and polished environment-friendly low-alkalinity circuit-grade silicon wafer according to claim 1, wherein the alcohol ether solvent is one or more of diethylene glycol butyl ether, triethylene glycol butyl ether, dipropylene glycol methyl ether, tripropylene glycol methyl ether and 3-methoxy-3-methyl-1-butanol.
  8. 8. The cleaning agent for the ground and polished environment-friendly low-alkalinity circuit-grade silicon wafer according to claim 1, wherein the organic base auxiliary agent is one or more of isopropanolamine, triethanolamine, diethanolamine, diglycolamine and methyldiethanolamine.

Description

Environment-friendly low-alkalinity circuit-level silicon wafer cleaning agent for grinding and polishing Technical Field The invention belongs to the technical field of manufacturing of circuit-level semiconductor materials, and particularly relates to a cleaning agent for a circuit-level silicon wafer, which is used for cleaning pollutants such as grinding liquid, polishing liquid, metal ions and the like remained on the surface of the silicon wafer after grinding and polishing. Background With the rapid development of AI technology, the requirements of chip algorithm are higher and higher, the integration level of ultra-large scale integrated circuits is higher and higher, the feature size of semiconductor devices is smaller and smaller, the requirements on the surface cleanliness of semiconductor substrates are higher and higher, the surface cleanliness is not the final requirement, and the surface chemical state, oxide film thickness, surface roughness and the like of the substrate sheets in the cleaning process are also important parameters. Silicon-based semiconductors remain the dominant source of current circuit-level wafer applications for their excellent cost performance as the first generation of semiconductor materials. The cleaning after grinding and polishing is an important process in the silicon wafer manufacturing process, and the surface cleanliness, surface chemical state and roughness of the cleaned silicon wafer have very important influence on the yield and reliability of subsequent chips and integrated circuits. The polishing liquid for silicon wafer consists of abrasive, polyether, polyvinyl alcohol, polyacrylic acid and other polymer and its derivative, and the polymer is used as suspension dispersant to form condensed state on the surface of silicon wafer to make the abrasive adsorbed onto the surface of silicon wafer to make the cleaning difficult. The cleaning agent used in the market at present adopts strong base products, contains a large amount of inorganic alkali and inorganic salt components, has insufficient cleaning capability, is not easy to rinse, increases the risk of overhigh metal ion residue of a silicon substrate, is easy to corrode the surface of a silicon wafer, causes the improvement of rejection rate, is not environment-friendly, has high alkalinity, contains harmful substances such as phosphorus, nonylphenol and the like, and is difficult to treat waste liquid. Disclosure of Invention The invention aims to solve the problems of the cleaning agent on the market at present, and provides an environment-friendly efficient cleaning agent for cleaning circuit-grade silicon wafers after grinding and polishing, which has the advantages of low alkalinity, no corrosion to the surfaces of the silicon wafers, strong cleaning power, easy rinsing, low metal ion content, no phosphorus or nonylphenol, easy biodegradation and easy wastewater treatment. The technical scheme is that the cleaning agent for the ground and polished low-alkalinity circuit-level silicon wafer comprises, by weight, 5-15% of an emulsifying agent, 0.5-5% of a wetting agent, 5-25% of a zwitterionic surfactant, 1-10% of alkyl glycoside, 0.5-5% of dodecylbenzenesulfonic acid, 1-10% of a chelating agent, 1-10% of an alcohol ether solvent, 1-5% of an organic base auxiliary agent, 0.5-2% of potassium hydroxide and the balance deionized water. The emulsifier is 2, 5, 9-trimethyldecanol polyoxyethylene ether with 5 EO numbers and 2, 5, 9-trimethyldecanol polyoxyethylene ether with 8 EO numbers, and the ratio of the two is 3:1. The wetting agent is 3-propyl heptanol polyoxyethylene ether with the number of 7 EO. The amphoteric surfactant is alkylamide betaine, and the alkylamide betaine is selected from one or two of lauramidopropyl betaine and cocoamidopropyl betaine. The alkyl glycoside is a mixture of C6 alkyl glycoside and C8-14 alkyl glycoside, and the ratio of the two is 1:2-4. The chelating agent is one or more of nitrilotriacetic acid, gluconic acid and citric acid. The alcohol ether solvent is one or more of diethylene glycol butyl ether, triethylene glycol butyl ether, dipropylene glycol methyl ether, tripropylene glycol methyl ether and 3-methoxy-3-methyl-1-butanol. The organic base auxiliary agent is one or more of isopropanolamine, triethanolamine, diethanolamine, diglycolamine and methyldiethanolamine. The invention has the advantages of low free alkalinity, no harmful substances such as phosphorus, nonylphenol and the like, no corrosion to human skin and silicon wafers, easy treatment of waste water, safety, environmental protection, strong detergency, high decontamination speed and easy rinsing. (1) The product can effectively destroy the aggregation state of the polymer by introducing the zwitterionic surfactant alkylamide betaine, and reduce the adsorption capacity of pollutants and abrasive materials on the surface of the silicon substrate, so that the pollutants and abrasive materials are eas