CN-121991769-A - Semiconductor element cleaning liquid and manufacturing method thereof

Abstract

The invention relates to a semiconductor element cleaning solution and a manufacturing method thereof. The semiconductor element cleaning liquid is characterized by containing 10ppb or less of a phenolic compound and having a ratio of the number of plasma generation per unit pulse laser irradiation times of less than 2% based on a laser induced breakdown detection method. The semiconductor element cleaning liquid is a high-purity semiconductor element cleaning liquid capable of effectively controlling phenol compounds inevitably generated in a manufacturing process of the semiconductor element cleaning liquid, thereby inhibiting residues from being generated on the surface of a cleaning object in the semiconductor element cleaning.

Inventors

• BAI CHENGHAO
• Han Shengbi
• CAO JINGHUA
• CAO BOXUAN
• REN CHENGHE

Assignees

• 东友精细化工有限公司

Dates

Publication Date

20260508

Application Date

20251103

Priority Date

20241106

Claims (8)

1. 1. A cleaning liquid for semiconductor elements, characterized by containing a phenolic compound of 10ppb or less and having a ratio of the number of plasma generation per pulse laser irradiation of less than 2% based on a laser induced breakdown detection method.
2. 2. The semiconductor element cleaning liquid according to claim 1, wherein the phenol compound is one or more selected from the group consisting of phenol, methylphenol, ethylphenol and isopropylphenol.
3. 3. The semiconductor element cleaning liquid according to claim 1 or 2, wherein the content of the phenol compound is 0.1ppb or more and 10ppb or less.
4. 4. The semiconductor element cleaning liquid according to claim 1 or 2, which has a ratio of the number of plasma generation per unit pulse laser irradiation number of less than 1.8%.
5. 5. The semiconductor element cleaning liquid according to claim 1, which is hydrogen peroxide.
6. 6. The semiconductor element cleaning liquid according to claim 1 or 2, wherein the nanoparticles present in the semiconductor element cleaning liquid are one or more selected from the group consisting of silver, calcium, nickel, silicon, molybdenum, iron, and oxides of these metal particles.
7. 7. A cleaning liquid for semiconductor elements is produced by a production method comprising a primary filtration step and a secondary filtration step, The secondary filtration step is performed using a filter formed of one or more selected from the group consisting of polytetrafluoroethylene PTFE and ultra high molecular weight polyethylene UPE materials.
8. 8. A method for manufacturing a semiconductor device cleaning liquid according to any one of claims 1 to 7, comprising a primary filtration step and a secondary filtration step, The secondary filtration step is performed using a filter formed of one or more selected from the group consisting of polytetrafluoroethylene PTFE and ultra high molecular weight polyethylene UPE materials.

Description

Semiconductor element cleaning liquid and manufacturing method thereof Technical Field The invention relates to a semiconductor element cleaning solution and a manufacturing method thereof. Background In the production of a highly integrated semiconductor device, a conductive thin film such as a metal film as a conductive wiring material or an interlayer insulating film serving as an insulating film between conductive thin films is formed on a device such as a wafer, and then a photoresist is uniformly coated on the surface to form a photosensitive layer, which is then selectively exposed to light and subjected to development treatment, thereby producing a desired resist pattern. Next, dry etching treatment is performed on the interlayer insulating film using the resist pattern as a mask, whereby the thin film is formed into a desired pattern. Thereafter, a process of completely removing the resist pattern, residues generated by the dry etching process, and the like by ashing using oxygen plasma, cleaning using a cleaning liquid, and the like is generally employed. In this case, hydrogen peroxide or the like is used as a cleaning liquid, and in particular, hydrogen peroxide is easily dissolved in water, ethanol, or diethyl ether, and partial hydrogen ions are dissociated in an aqueous solution to be weakly acidic and have a strong oxidizing power, and therefore, hydrogen peroxide is used as an oxidizing reagent or the like in many fields. In particular, hydrogen peroxide is used for cleaning (WAFER CLEANING) semiconductor wafers and etching (etching) in semiconductor and display manufacturing processes, in which case high purity hydrogen peroxide with extremely low impurity levels is required. However, in the case of using commercially available hydrogen peroxide as it is, the high impurity concentration in hydrogen peroxide causes damage to a semiconductor, etc., and it is difficult to produce a high-quality product, and besides, in a severe environment in a semiconductor device cleaning process, there is a problem that residues remain on the surface of a cleaning object due to aggregation between impurities and nanoparticles, but in practice, the technology for the cause and countermeasure of the problem is still insufficient. On the other hand, U.S. registration No. 8,715,613 discloses a method for producing high purity hydrogen peroxide. However, the purified hydrogen peroxide water still has a high impurity concentration such as phenol compounds, and the problem that the purity required in the precision chemistry field cannot be achieved, and the problem that residues are generated on the surface of the cleaning object during the cleaning of the semiconductor element cannot be solved. Accordingly, there is a need for developing a semiconductor device cleaning liquid that satisfies the purity required in precision chemistry such as semiconductor industry and suppresses the generation of residues on the surface of the cleaning object during the cleaning of semiconductor devices, and a method for producing the same. Prior art literature Patent literature Patent document 1 U.S. registered patent No. 8,715,613 Disclosure of Invention Problems to be solved The present invention aims to provide a semiconductor element cleaning liquid and a method for producing the same, which can effectively control phenol compounds inevitably generated in the production process of the semiconductor element cleaning liquid, thereby inhibiting residues from being generated on the surface of a cleaning object in the semiconductor element cleaning. However, the problems to be solved by the present application are not limited to the above-mentioned problems, and other problems not mentioned will be clearly understood by those skilled in the art from the following description. Means for solving the problems In order to solve the above problems, the present invention provides a semiconductor element cleaning liquid comprising a phenolic compound of 10ppb or less, wherein the ratio of the number of plasma generation per pulse laser irradiation is less than 2% based on a laser induced breakdown detection method. The phenolic compound may be one or more selected from the group consisting of phenol, methylphenol, ethylphenol and isopropylphenol. The content of the phenol compound may be 0.1ppb or more and 10ppb or less. The ratio of the number of plasma generation per pulse laser irradiation times of the semiconductor element cleaning liquid may be less than 1.8%. The semiconductor element cleaning liquid may be hydrogen peroxide. The nanoparticles present in the semiconductor element cleaning liquid may be one or more selected from the group consisting of silver (Ag), calcium (Ca), nickel (Ni), silicon (Si), molybdenum (Mo), iron (Fe), and oxides of these metal particles. The semiconductor element cleaning liquid is a semiconductor element cleaning liquid produced by a production method including a primary filtration step and a second