CN-121991770-A - Cleaning composition and method for manufacturing semiconductor device using the same

Abstract

The present invention relates to a cleaning composition and a method of manufacturing a semiconductor device using the same. The cleaning composition according to the embodiment of the invention comprises a fluorine-based compound, an organic acid salt compound, an inorganic acid compound and water, wherein the content of the water is at least 50% by weight based on the total weight of the composition, and the cleaning composition has a pH of 0.5-4. The cleaning composition can have a high cleaning ability for photoresist residues converted by a high energy process, and does not etch wirings including metals (e.g., mo, W, ru, etc.) and layers such as a silicon oxide layer and a silicon nitride layer.

Inventors

• BAI ZHONGXU
• LI JIYU
• LI DONGKUI

Assignees

• 东友精细化工有限公司

Dates

Publication Date

20260508

Application Date

20251028

Priority Date

20241101

Claims (13)

1. 1. A cleaning composition comprising: A fluorine-based compound; An organic acid salt compound; An inorganic acid compound, and The water is used as the water source, Wherein the water is present in an amount of at least 50wt% based on the total weight of the composition, and the cleaning composition has a pH of 0.5 to 4.
2. 2. The cleaning composition of claim 1, wherein the cleaning composition has a pH of 1-3.
3. 3. The cleaning composition of claim 1, wherein the fluorine-based compound comprises an ionic bond between a hydrogen cation or an ammonium cation and a fluorine anion.
4. 4. A cleaning composition according to any one of claims 1 to 3 wherein the ammonium cation contains 4 to 20 carbon atoms.
5. 5. A cleaning composition according to any one of claims 1 to 3, wherein the fluorine-based compound is present in an amount of 0.005 to 10 wt% based on the total weight of the cleaning composition.
6. 6. A cleaning composition according to any one of claims 1 to 3 wherein the organic acid salt compound comprises an ionic bond between an ammonium cation and an organic acid derived anion.
7. 7. The cleaning composition of claim 6, wherein the organic acid comprises at least one selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, palmitic acid, stearic acid, oleic acid, oxalic acid, malonic acid, succinic acid, tartaric acid, maleic acid, glycolic acid, glutaric acid, adipic acid, sulfosuccinic acid, valeric acid, caproic acid, caprylic acid, capric acid, lauric acid, myristic acid, lactic acid, malic acid, citric acid, benzoic acid, salicylic acid, p-toluenesulfonic acid, naphthoic acid, nicotinic acid, toluic acid, anisic acid, cumic acid, and phthalic acid.
8. 8. A cleaning composition according to any one of claims 1 to 3 wherein the organic acid salt compound is present in an amount of 0.01 to 10 wt% based on the total weight of the composition.
9. 9. A cleaning composition according to any one of claims 1 to 3, wherein the inorganic acid compound comprises at least one selected from the group consisting of hydrochloric acid, phosphoric acid, sulfuric acid and boric acid.
10. 10. A cleaning composition according to any one of claims 1 to 3 wherein the inorganic acid compound comprises a compound having an oxidation-reduction potential of 650mV or less or a salt thereof.
11. 11. A cleaning composition according to any one of claims 1 to 3, wherein the water content is 80 wt% or more based on the total weight of the composition.
12. 12. A cleaning composition according to any one of claims 1 to 3, wherein the cleaning composition does not comprise an amine compound, an ammonium hydroxide compound, a metal hydroxide, a peroxide compound, an organic solvent or a surfactant.
13. 13. A method of manufacturing a semiconductor device, comprising: Forming a photoresist pattern on a substrate; removing the photoresist pattern after an etching process using the photoresist pattern, and Cleaning residues from the photoresist pattern using the cleaning composition of any one of claims 1 to 12.

Description

Cleaning composition and method for manufacturing semiconductor device using the same Technical Field The present invention relates to a cleaning composition and a method of manufacturing a semiconductor device using the same. Background In order to form a wiring or an insulating pattern included in a highly integrated semiconductor device, a mask pattern may be formed by coating and curing a photoresist on an etching target layer. After the dry etching process using the mask pattern, the mask pattern may be removed by, for example, an ashing process. During the dry etching and/or ashing process, the photoresist material may be converted, and the converted photoresist may remain on the wiring, insulating layer, or semiconductor substrate. To remove the residual converted photoresist, a wet process using a cleaning composition may be employed. However, the cleaning composition may damage a wiring material containing a conductive metal, or an insulating layer containing an organic material or a silicon-based inorganic material. When a conventional cleaning composition is used, wiring containing a metal such as ruthenium is also removed, or the remaining photoresist is not sufficiently dissolved. Thus, there is a need to improve the selectivity of cleaning compositions. Disclosure of Invention According to one aspect of the present invention, a cleaning composition having enhanced cleaning capabilities is provided. According to one aspect of the present invention, there is provided a method of manufacturing a semiconductor device using the cleaning composition. (1) A cleaning composition comprising a fluorine-based compound, an organic acid salt compound, an inorganic acid compound, and water, wherein the water content is at least 50% by weight based on the total weight of the composition, and the cleaning composition has a pH of 0.5 to 4. (2) The cleaning composition according to the above (1), wherein the cleaning composition has a pH of 1 to 3. (3) The cleaning composition according to the above (1), wherein the fluorine-based compound contains a hydrogen cation or an ionic bond between an ammonium cation and a fluorine anion. (4) The cleaning composition according to any one of the above (1) to (3), wherein the ammonium cation contains 4 to 20 carbon atoms. (5) The cleaning composition according to any one of the above (1) to (3), wherein the content of the fluorine-based compound is 0.005% by weight to 10% by weight based on the total weight of the cleaning composition. (6) The cleaning composition according to any one of the above (1) to (3), wherein the organic acid salt compound comprises an ionic bond between an ammonium cation and an organic acid-derived anion. (7) The cleaning composition of the above (6), wherein the organic acid comprises at least one selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, palmitic acid, stearic acid, oleic acid, oxalic acid, malonic acid, succinic acid, tartaric acid, maleic acid, glycolic acid, glutaric acid, adipic acid, sulfosuccinic acid, valeric acid, caproic acid, caprylic acid, capric acid, lauric acid, myristic acid, lactic acid, malic acid, citric acid, tartaric acid, benzoic acid, salicylic acid, p-toluenesulfonic acid, naphthoic acid, nicotinic acid, toluic acid, anisic acid, cumic acid and phthalic acid. (8) The cleaning composition according to any one of the above (1) to (3), wherein the content of the organic acid salt compound is 0.01 wt% to 10 wt% based on the total weight of the composition. (9) The cleaning composition according to any one of the above (1) to (3), wherein the inorganic acid compound comprises at least one selected from the group consisting of hydrochloric acid, phosphoric acid, sulfuric acid and boric acid. (10) The cleaning composition according to any one of the above (1) to (3), wherein the inorganic acid compound comprises a compound having an oxidation-reduction potential of 650mV or less or a salt thereof. (11) The cleaning composition according to any one of the above (1) to (3), wherein the content of water is 80% by weight or more based on the total weight of the composition. (12) The cleaning composition according to any one of the above (1) to (3), wherein the cleaning composition does not contain an amine compound, an ammonium hydroxide compound, a metal hydroxide, a peroxide compound, an organic solvent or a surfactant. (13) A method of manufacturing a semiconductor device includes forming a photoresist pattern on a substrate, removing the photoresist pattern after an etching process using the photoresist pattern, and cleaning residues from the photoresist pattern using the cleaning composition according to the above embodiment. The cleaning composition according to the exemplary embodiment of the present invention may have a high cleaning ability for photoresist residues converted through a high energy process. Accordingly, a high-quality semiconductor device can be provided.