CN-121992340-A - Preparation method of mask plate for high-resolution OLED evaporation

CN121992340ACN 121992340 ACN121992340 ACN 121992340ACN-121992340-A

Abstract

The invention discloses a preparation method of a mask plate for high-resolution OLED evaporation, which comprises the following steps of S1) covering a metal layer on one side surface of a glass substrate, S2) forming a photoresist on one side, far away from the substrate layer, of the metal layer, wherein the photoresist is provided with a plurality of first through holes, the first through holes are arranged corresponding to areas to be evaporated on a display substrate, S3) etching the area, which is not covered by the photoresist, of the metal layer, forming a second through hole which is communicated with the first through holes on the metal layer, S4) removing the photoresist, S5) performing plasma etching on the area, which is not covered by the metal layer, of the glass substrate, and forming a third through hole which is communicated with the second through holes on the glass substrate. According to the invention, the mask plate is formed by matching the glass substrate with the metal layer, the vapor plating pattern is defined by the metal layer (which is provided with the second through holes), and the high-resolution effect of the display substrate can be realized by matching the high-density third through holes formed on the glass substrate.

Inventors

ZHOU HAOYU
JIANG CHENGZHONG
WANG CHENXU

Assignees

盛显新材料科技(苏州)有限公司

Dates

Publication Date: 20260508
Application Date: 20251222

Claims (10)

1. The preparation method of the mask plate for high-resolution OLED evaporation is characterized by comprising the following steps of: s1) covering a metal layer on one side surface of a glass substrate; S2) forming a photoresist on one side, far away from the substrate layer, of the metal layer, wherein the photoresist is provided with a plurality of first through holes, and the first through holes are correspondingly arranged with a region to be evaporated on the display substrate; s3) etching the area, which is not covered by the photoresist, of the metal layer, and forming a second through hole which is communicated with the first through hole on the metal layer, wherein the second through hole is arranged corresponding to the area to be evaporated on the display substrate; S4) removing the photoresist; S5) carrying out plasma etching on the area, which is not covered by the metal layer, of the glass substrate, and forming a third through hole which is communicated with the second through hole on the glass substrate, wherein the third through hole is arranged corresponding to the area to be evaporated on the display substrate.
2. The method for preparing a mask for high-resolution OLED vapor deposition according to claim 1, wherein the metal layer in S1 is coated on the glass substrate by physical sputtering or chemical plating.
3. The method for preparing a mask for high-resolution OLED vapor deposition according to claim 1, wherein the metal layer in S1 is first physically sputtered and then electroplated onto the glass substrate.
4. The method for preparing a mask for high-resolution OLED vapor deposition according to claim 1, wherein the metal layer in S1 includes at least a magnetically conductive material.
5. The method for producing a mask for high-resolution OLED vapor deposition according to claim 1 or 4, wherein the thickness of the metal layer in S1 is 1-25. Mu.m.
6. The method for preparing a mask for high-resolution OLED vapor deposition according to claim 1, wherein the photoresist in S2 is a combination of a polymer resin, a photosensitizer and a solvent.
7. The method for preparing the mask for high-resolution OLED evaporation according to claim 1, wherein the etching in the step S3 is wet etching by using an etching solution, wherein the etching solution comprises one or more of nitric acid solution, aqua regia, ferric chloride solution, copper sulfate solution, ammonium persulfate solution and potassium persulfate solution, and the temperature of the wet etching is 15-50 ℃.
8. The method for preparing a mask for high-resolution OLED vapor deposition according to claim 1, wherein the photoresist is removed in S4 by an alkaline solution process.
9. The method for preparing the mask for high-resolution OLED evaporation according to claim 1, wherein in the step S5, plasma etched by the plasma is ICP or ECR, and gas etched by the plasma comprises one or more of CF 4 、SF 6 、C 3 F 8 、Ar、Kr、O 2 , and the etching conditions are that the pressure of an etching cavity is 1-100mTorr and the temperature is-20-100 ℃.
10. The method for manufacturing a mask for high-resolution OLED vapor deposition according to claim 1, wherein the second through hole and the third through hole have the same vertical projection.

Description

Preparation method of mask plate for high-resolution OLED evaporation Technical Field The invention relates to the technical field of mask processing, in particular to a preparation method of a mask for high-resolution OLED evaporation. Background For OLED display products, all need RGB organic material's evaporation plating, the evaporation plating key tool is FMM (Fine Metal Mask) meticulous metal mask plate, and it is the metal material, can more accurately define OLED evaporation plating figure after producing magnetism to it through the magnetic force board. In the prior art, the main material of the fine metal mask plate is iron-nickel alloy, and wet chemical etching process is mainly used in the process of manufacturing the mask plate, and then proper photoetching is carried out. The level of ppi of the display substrate directly determines the fineness of the display image quality, and in order to increase ppi, it is first necessary to increase ppi of the FMM. However, the fine metal mask has the following problems that, on one hand, an ultrathin defect-free iron-nickel material is mastered by Japanese HITACHI METAL, on the other hand, when wet etching is carried out on an iron-nickel alloy, the aperture density of the iron-nickel alloy material cannot be improved due to the lateral etching characteristic of wet etching, ppi of the iron-nickel alloy material is influenced, ppi of a display substrate subjected to evaporation is influenced, double-sided etching is adopted to improve the aperture density, the process is complicated, and 600ppi is upper limit data in the prior art for the existing FMM preparation method. Disclosure of Invention The invention aims to provide a preparation method of a mask plate for high-resolution OLED evaporation, which is characterized in that the mask plate is formed by matching a glass substrate with a metal layer, an evaporation pattern is defined by the metal layer (which is provided with a second through hole), and a high-density third through hole formed on the glass substrate is matched, so that the high-resolution effect of a display substrate can be realized when the mask plate is applied. In order to achieve the purpose, the technical scheme adopted by the invention is that the preparation method of the mask plate for high-resolution OLED evaporation plating comprises the following steps: s1) covering a metal layer on one side surface of a glass substrate; S2) forming a photoresist on one side, far away from the substrate layer, of the metal layer, wherein the photoresist is provided with a plurality of first through holes, and the first through holes are correspondingly arranged with a region to be evaporated on the display substrate; s3) etching the area, which is not covered by the photoresist, of the metal layer, and forming a second through hole which is communicated with the first through hole on the metal layer, wherein the second through hole is arranged corresponding to the area to be evaporated on the display substrate; S4) removing the photoresist; S5) carrying out plasma etching on the area, which is not covered by the metal layer, of the glass substrate, and forming a third through hole which is communicated with the second through hole on the glass substrate, wherein the third through hole is arranged corresponding to the area to be evaporated on the display substrate. As a further optimization, the metal layer in S1 is covered on the glass substrate by physical sputtering or chemical plating. As a further optimization, the metal layer in S1 is first coated on the glass substrate by physical sputtering and then electroplating. As a further optimization, the metal layer in S1 at least includes a magnetic conductive material, and can be used for being adsorbed to the magnetic plate when the display substrate is evaporated. As a further optimization, the thickness of the metal layer in the S1 is 1-25 mu m, and the lateral etching of the second through hole can be avoided due to the thinner thickness. As a further optimization, the photoresist in S2 is a combination of a polymer resin, a photosensitizer and a solvent. As further optimization, the etching in the step S3 is wet etching by using an etching solution, wherein the etching solution comprises one or more of nitric acid solution, aqua regia, ferric chloride solution, copper sulfate solution, ammonium persulfate solution and potassium persulfate solution, and the temperature of the wet etching is 15-50 ℃. As a further optimization, the photoresist is removed in S4 by an alkaline solution. As further optimization, the plasma in the plasma etching in the step S5 is ICP or ECR, and the gas in the plasma etching comprises one or more of CF 4、SF6、C3F8、Ar、Kr、O2, wherein the etching condition is that the etching cavity pressure is 1-100mTorr and the temperature is-20-100 ℃. As a further optimization, the second through hole and the third through hole have the same vertical projection, namely, the se