CN-121992347-A - Nickel-vanadium alloy target assembly with good interface bonding strength and binding method thereof

Abstract

The invention discloses a nickel-vanadium alloy target assembly with good interface bonding strength and a binding method thereof, and relates to the technical field of heterogeneous metal welding. The binding method specifically comprises the following steps of respectively machining a nickel-vanadium alloy target binding end face and a copper back plate binding end face, carrying out sand blasting treatment on the machined nickel-vanadium alloy target binding end face, carrying out surface activation on a nickel foil intermediate layer, placing the activated nickel foil intermediate layer between the machined copper back plate binding end face and the sand blasted nickel-vanadium alloy target binding end face, and then carrying out diffusion welding connection to obtain a nickel-vanadium alloy target assembly.

Inventors

• WANG CHUANJUN
• TANG QI
• LI MINGYU
• LUO YUXI
• WEN MING
• LI JINGYU
• SHEN YUE
• XU YANTING
• LI SIXIE
• Shi Chenqi
• TIAN JIAN
• LI SHIQI

Assignees

• 云南省贵金属新材料控股集团股份有限公司
• 贵研先进新材料(上海)有限公司
• 昆明贵金属研究所

Dates

Publication Date

20260508

Application Date

20260130

Claims (7)

1. 1. The nickel-vanadium alloy target assembly with the good interface bonding strength is characterized by comprising a nickel-vanadium alloy target, a nickel foil middle layer and a copper back plate, wherein the interface shearing strength is more than or equal to 190MPa.
2. 2. The nickel-vanadium alloy target assembly with good interface bonding strength according to claim 1, wherein the content of vanadium in the nickel-vanadium alloy target is 7+/-0.5% by mass, and the copper back plate is an oxygen-free copper or copper alloy back plate.
3. 3. The nickel-vanadium alloy target assembly with good interface bonding strength according to claim 1, wherein the nickel foil intermediate layer is in a rolled state or an annealed state, the thickness of the nickel foil intermediate layer is 25-500 μm, the average width of rolled grains is less than 50 μm when the nickel foil intermediate layer is in the rolled state, and the average grain size is less than 50 μm when the nickel foil intermediate layer is in the annealed state.
4. 4. The method for binding the nickel-vanadium alloy target assembly with good interface bonding strength according to claim 1, which is characterized by comprising the following steps: (1) Respectively machining the end face for binding the nickel-vanadium alloy target and the end face for binding the copper back plate to obtain a machined nickel-vanadium alloy target and a machined copper back plate; (2) Performing sand blasting on the end face for binding the nickel-vanadium alloy target after machining to obtain a nickel-vanadium alloy target after sand blasting; (3) Carrying out surface activation on the nickel foil intermediate layer to obtain an activated nickel foil intermediate layer; (4) And placing the activated nickel foil interlayer between the end surface for binding the machined copper back plate and the end surface for binding the sandblasted nickel-vanadium alloy target, and then performing diffusion welding connection to obtain the nickel-vanadium alloy target assembly with good interface bonding strength.
5. 5. The method for binding the nickel-vanadium alloy target component with good interface bonding strength according to claim 4, wherein the sand blasting treatment in the step (2) is carried out under the conditions that white corundum or silicon carbide sand is adopted, the sand blasting distance is 100-200 mm, the sand blasting pressure is 0.3-0.6 MPa, the sand blasting treatment is carried out for 2-10 min, and the roughness of the nickel-vanadium alloy target after the sand blasting treatment is 2-6 mu m.
6. 6. The method for binding the nickel-vanadium alloy target assembly with good interface bonding strength according to claim 4, wherein the method for activating the surface in the step (3) is characterized in that the nickel foil intermediate layer is immersed in a hydrochloric acid aqueous solution or a sulfuric acid aqueous solution with the mass percentage concentration of 2-10% for 1-10 min.
7. 7. The method for binding the nickel-vanadium alloy target assembly with good interface bonding strength according to claim 4, wherein the diffusion welding condition in the step (4) is vacuum hot-pressing sintering, and vacuum hot-pressing is carried out for 1-4 hours under the vacuum condition at the pressure of 10-50 MPa and the temperature of 400-650 ℃.

Description

Nickel-vanadium alloy target assembly with good interface bonding strength and binding method thereof Technical Field The invention relates to a nickel-vanadium alloy target assembly with good interface bonding strength and a binding method thereof, belonging to the technical field of heterogeneous metal welding. Background The sputtering target material is a raw material for Physical Vapor Deposition (PVD) coating, and compared with arc ion plating, vacuum evaporation coating or other PVD coating modes, the film prepared by sputtering has excellent performance, such as compact film layer structure and uniform film thickness, and is one of the mainstream coating modes at present. Nickel vanadium alloy (NiV) is a widely used sputtering target, which contains 7 mass percent of vanadium and is free of ferromagnetism, so that the nickel vanadium alloy is easy to deposit and can be applied to the field of adhesion layers in semiconductor devices and integrated circuits. However, the nickel-vanadium alloy after adding vanadium also brings new problems to the preparation and processing of the alloy, such as welding with the back plate material. In order to reduce the cost and improve the heat conducting performance, the NiV alloy is usually required to be welded (called binding) with the copper back plate. The conventional welding mode mainly comprises low-temperature brazing, but the nickel-vanadium alloy has poor weldability due to the addition of the V element, cracks or air holes are very easy to generate in the brazing welding process, and the defects of large welding deformation and low productivity exist. Meanwhile, because the solder has a low melting point, the solder can only be used at a temperature below 200 ℃, so that the further application of the solder is limited, and therefore, a better welding mode needs to be selected for processing. Diffusion welding is a common means of preparing high performance sputter targets. And the welding parts are tightly attached by adopting a vacuum hot pressing and hot isostatic pressing method, and the two surfaces which are in contact with each other at a certain temperature and under a certain pressure are reliably connected with the copper backboard by utilizing the diffusion of atoms on the welding surfaces after the welding parts are kept for a certain time. However, in the diffusion welding and binding process, the V element is extremely easy to oxidize, and the enrichment of oxygen element is extremely easy to exist in the welding process, so that the welding strength and the service performance of the nickel-vanadium alloy and the copper backboard are affected. Patent document CN104690417a discloses a method for welding a nickel or nickel alloy target and a back plate, wherein uniformly distributed linear teeth are machined on the surface of nickel-vanadium alloy, and a target component with a welding rate of 98.5% and a welding strength of 156MPa can be obtained by adopting hot isostatic pressing. However, the surface processing process is time-consuming, the hot isostatic pressing process is complex and has high equipment requirements, and the welding rate and strength do not reach the optimal level. The method of adding an intermediate layer is used for welding the target material. For example, U.S. patent document US6619537B1 discloses a Cu/Al backing plate target assembly prepared by hot isostatic pressing by depositing a layer of nickel alloy on the surfaces of a copper target and an aluminum backing plate. The method requires long time for depositing the nickel alloy, special coating equipment is required, the hot isostatic pressing cost is high, and the cost is obviously increased when the method is used for preparing the batch industrial production. Therefore, there is a need to develop a nickel vanadium target assembly and a welding method thereof that are low cost, high efficiency, and have good interfacial bonding strength. Disclosure of Invention Aiming at the defects of the related art, the invention provides the nickel-vanadium alloy target assembly with good interface bonding strength and the binding method thereof, has the advantages of realizing the connection of the nickel-vanadium alloy target and the copper backboard with high strength and high welding rate, and solves the problems of low welding bonding strength and complex operation of the nickel-vanadium alloy target and the copper backboard. One of the purposes of the invention is to provide a nickel-vanadium alloy target assembly with good interface bonding strength, which consists of a nickel-vanadium alloy target, a nickel foil middle layer and a copper back plate, wherein the interface shearing strength is more than or equal to 190MPa. Preferably, the content of vanadium in the nickel-vanadium alloy target is 7+/-0.5% by mass, and the copper back plate is oxygen-free copper (such as Tu 1) or copper alloy back plate (such as copper-chromium alloy, copper-chromium-zirconium alloy