CN-121992349-A - Target material and laminate

Abstract

The present invention provides a target material suitable for forming a close-fitting layer which has excellent close-fitting property with a substrate and also has excellent etching property when ferric chloride is used. The target contains Ni, cr, and at least one of Al and Zn as elements, and when the total of Ni, cr, al, zn is set to 100at%, cr is contained in an amount of 4 to 14at%, and at least one of Al and Zn is contained in an amount of 4 to 16at%, with the remainder being composed of Ni and unavoidable impurities.

Inventors

• ZHU JINGZHOU

Assignees

• 大同特殊钢株式会社

Dates

Publication Date

20260508

Application Date

20251028

Priority Date

20241101

Claims (7)

1. 1. A target material is characterized in that, When Ni, cr, and at least one of Al and Zn are contained as elements, and the total of Ni, cr, al, zn at% is set to 100at%, Cr is 4-14at%, At least one of Al and Zn is contained in an amount of 4 to 16at%, The remainder is composed of Ni and unavoidable impurities.
2. 2. The target according to claim 1, wherein, When Ni, cr, al, zn is 100at%, the Cr content is 7 to 13at%.
3. 3. The target according to claim 1 or 2, wherein, When Ni, cr, al, zn is 100at%, the total content of Al and Zn is 7 to 13at%.
4. 4. A laminate body, characterized in that, Comprises a substrate, a close-fitting layer formed on the substrate, and a conductive layer formed on the close-fitting layer, The close-fitting layer contains Ni, cr, and at least one of Al and Zn as elements, and when the total of Ni, cr, al, zn at% is set to 100at%, Cr is 4-14at%, At least one of Al and Zn is contained in an amount of 4 to 16at%, The remainder is composed of Ni and unavoidable impurities.
5. 5. The laminate according to claim 4, wherein, When the total amount of Ni, cr, al, zn is set to 100at%, the Cr content is 7 to 13at%.
6. 6. The laminate according to claim 4 or 5, wherein, When Ni, cr, al, zn is 100at%, the total content of Al and Zn is 7 to 13at%.
7. 7. The laminate according to claim 4 or 5, wherein, The conductive layer has a seed layer formed on the close-fitting layer and a plating layer formed on the seed layer.

Description

Target material and laminate Technical Field The present invention relates to a target and a laminate having a tightly bonded layer formed by using the target. Background In liquid crystal panels, notebook computers, digital cameras, mobile phones, and the like, flexible wiring boards having wiring patterns formed on a resin film substrate are used. The flexible wiring board is manufactured using a copper-clad laminate (laminate) having a resin film base (substrate) and a copper-clad layer (conductive layer) laminated on at least one surface of the resin film base. In such a laminate, it is necessary to ensure a predetermined adhesion force between the resin film base material and the copper-clad layer, and for example, in patent document 1 below, a base metal layer (adhesion layer) made of a ni—ti—cr alloy is formed between the resin film base material and the copper-clad layer. Prior art literature Patent literature Patent document 1 Japanese patent laid-open No. 2006-73766 Disclosure of Invention Technical problem to be solved by the invention However, the base metal layer (adhesion layer) made of a ni—ti—cr alloy has poor etching properties with respect to ferric chloride which is generally used when removing an excess conductive layer and forming a predetermined wiring pattern on a substrate, and it is difficult to simultaneously etch the adhesion layer and the conductive layer thereon. As a result, etching must be performed in two stages, which is problematic in terms of productivity. The present invention was made in view of the above circumstances, and an object thereof is to provide a laminate having a tightly bonded layer excellent in tightly bonded to a substrate and also excellent in etching property when ferric chloride is used, and a target material suitable for forming the tightly bonded layer. Technical scheme for solving technical problems The present inventors have conducted intensive studies to solve the above problems, and as a result, have found that etching properties can be improved by substituting Ti in the ni—ti—cr alloy with Al or Zn. In the present invention, the content of Al and Zn in the Ni-based alloy constituting the close-contact layer is optimized to ensure close contact with the substrate and etching properties when ferric chloride is used. The laminate of the present invention comprises a substrate, a tightly bonded layer formed on the substrate, and a conductive layer formed on the tightly bonded layer, and contains at least one element selected from the group consisting of Ni, cr, and Al and Zn, wherein when the total amount of these Ni, cr, al, zn is set to 100at%, cr is contained in an amount of 4 to 14at%, at least one element selected from the group consisting of Al and Zn is contained in an amount of 4 to 16at%, and the balance is composed of Ni and unavoidable impurities. According to the laminate of the present invention thus defined, a laminate having a tightly bonded layer excellent in the tightly bonded property to a substrate and also excellent in the etching property when ferric chloride is used can be formed. The target material of the present invention contains, as an element, at least one of Ni, cr, and Al and Zn, and when the total of Ni, cr, al, zn at% is set to 100at%, cr is contained in an amount of 4 to 14at%, at least one of Al and Zn is contained in an amount of 4 to 16at%, and the remainder is composed of Ni and unavoidable impurities. By using the target of the present invention defined as above, a tightly bonded layer excellent in tightly bonding to a substrate and excellent in etching properties even when ferric chloride is used can be formed by a sputtering method. Drawings Fig. 1 is a view showing a laminate provided with a closely laminated layer according to an embodiment of the present invention. Fig. 2 is a view showing another embodiment of the laminate shown in fig. 1. Detailed Description Next, an example of the embodiment of the present invention will be specifically described. < 1> Laminate body In fig. 1, 10 shows an example of a laminate according to an embodiment of the present invention. The laminate 10 includes a substrate 12, a bonding layer 14 formed on the substrate 12, and a conductive layer 16 formed on the bonding layer 14. The substrate 12 may be glass such as soda lime glass, or a resin material such as polyethylene terephthalate (PET), polypropylene (PP), polystyrene (PS), polyvinyl chloride (PVC), polycarbonate (PC), polymethyl methacrylate (PMMA), polyimide (PI), or the like. The conductive layer 16 is preferably a material having a resistivity of 8.0 μΩ·cm or less and having high conductivity, and as such a material, pure Cu, a Cu alloy, pure Al, an Al alloy, or the like can be used. In this embodiment, the conductive layer 16 is composed of a seed layer 17 formed by a sputtering method and a plating layer 18 having the seed layer 17 as a conductive path. The plating layer 18 is formed by, for example, electrolytic p